Felix Ejeckam

Felix Ejeckam

San Francisco, California, United States
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About

Serial entrepreneur (2 exits), engineer, and creator of GaN-on-Diamond

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Experience

  • Akash Systems Graphic

    Akash Systems

    San Francisco, California, United States

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    Santa Clara, CA (USA)

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    Bay Area, CA

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    San Jose, CA (USA)

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Education

Publications

  • Ultra-Cool GaN on Diamond Power Amplifiers for SATCOM

    Microwave Journal, Diamond Anniversary Issue + Semiconductors & Packaging, Vol. 61, 6th Ed.

    The most advanced commercial satellites transmit data down to Earth at rates of 100 to 200 Mbps; some advanced larger single satellite concepts target 1 to 4 Gbps. These data rates are substantially limited by state-of-the-art RF power amplifiers used to make the transmitters. Akash is building, for the first time, a small satellite system (12U) that will exhibit a preliminary downlink data rate of 14 Gbps. The next demo will feature data rates of over 100 Gbps. The ultimate technical goal is…

    The most advanced commercial satellites transmit data down to Earth at rates of 100 to 200 Mbps; some advanced larger single satellite concepts target 1 to 4 Gbps. These data rates are substantially limited by state-of-the-art RF power amplifiers used to make the transmitters. Akash is building, for the first time, a small satellite system (12U) that will exhibit a preliminary downlink data rate of 14 Gbps. The next demo will feature data rates of over 100 Gbps. The ultimate technical goal is to demonstrate a downlink data rate of 1 Tbps from a single, modest size satellite—using GaN on Diamond RF power amplifiers.

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  • 100+ journal and conference papers in semiconductor materials, device physics, and systems engineering

  • GaN-on-diamond: A brief history

    Proceedings of the IEEE Lester Eastman Conference on High Performance Devices

    This paper chronicles the historical technical development of Gallium Nitride-on-Diamond wafers and transistor devices by the authors starting from 2003 until the current status in 2014.

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  • GaN-on-Diamond Field-Effect Transistors: From Wafers to Amplifier Modules

    MIPRO 2010

    We describe the development and issues related to fabrication, die processing, and packaging GaN-on-diamond high-electron mobility transistors into X-band amplifier modules. We perform thermal resistance measurements on these amplifiers using liquid-crystal thermography and show that they agree with theory and previously published measurements on GaN-on-diamond devices.

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Patents

Honors & Awards

  • America's 50 Greatest Disruptors: Visionaries and Innovators Who Are Changing The World

    Newsweek magazine (December, 2021)

  • Technology Pioneer

    World Economic Forum

    The World Economic Forum announced its selection of the 100 most promising Technology Pioneers of 2021 – companies that are shaping industries from healthcare to retail and many more.

  • 2015 Semiconductor Material of the Year award, for GaN-on-Diamond Wafers

    Electronic Device News

  • 2015 CS Industry Award in the substrates and materials category, for "GaN-on-Diamond"

    Compound Semiconductor magazine

  • Wolfson Research Merit Award for “GaN Diamond Electronics – Novel Thermal Management Concepts”

    Wolfson Foundation

  • Top R&D award for innovative "GaN-on-Diamond technology"

    Compound Semiconductor Magazine

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