Exciting News Alert! We're thrilled to reveal that we've got our hands on Infineon Technologies' second-generation CoolSiC G2 MOSFET, the IMBG120R008M2H 1200V 7.7 mOhm, right here in our labs! Our initial analysis reveals intriguing insights into the CoolSiC G2. While specific on-resistance remains a key metric, it's just one piece of the puzzle. We're exploring factors like conduction performance, switching behavior, and robustness to uncover the true potential of this technology. Read more in our FREE blog. https://bit.ly/3Il1Sz5
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We've obtained Infineon Technologies' CoolSiC G2 MOSFET, IMBG120R008M2H 1200V 7.7 mOhm, in our labs! Our initial analysis delves into its conduction performance, switching behavior, and robustness, unlocking its true potential. Read more in our FREE blog!
Exciting News Alert! We're thrilled to reveal that we've got our hands on Infineon Technologies' second-generation CoolSiC G2 MOSFET, the IMBG120R008M2H 1200V 7.7 mOhm, right here in our labs! Our initial analysis reveals intriguing insights into the CoolSiC G2. While specific on-resistance remains a key metric, it's just one piece of the puzzle. We're exploring factors like conduction performance, switching behavior, and robustness to uncover the true potential of this technology. Read more in our FREE blog. https://bit.ly/3Il1Sz5
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You will gain valuable insights into how PerkinElmer Fourier transform infrared (FTIR) solutions have been thoughtfully engineered to overcome these challenges, and also learn about the diverse applications of FTIR technology within the semiconductor sector. https://bit.ly/3NHpAZk
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You will gain valuable insights into how PerkinElmer Fourier transform infrared (FTIR) solutions have been thoughtfully engineered to overcome these challenges, and also learn about the diverse applications of FTIR technology within the semiconductor sector. https://bit.ly/3NHpAZk
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An investigation by RUSI's Open Source Intelligence and Analysis team, in partnership Nieuwsuur and ARD MONITOR, reveals how one of Russia’s leading microelectronic distributors has imported Western microelectronics through Germany and Hong Kong since February 2022. Read the full report here: https://bit.ly/3uTa5qy
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𝐂𝐮𝐫𝐢𝐨𝐮𝐬 𝐡𝐨𝐰 𝐠𝐚𝐥𝐥𝐢𝐮𝐦 𝐧𝐢𝐭𝐫𝐢𝐝𝐞 (𝐆𝐚𝐍) 𝐢𝐬 𝐧𝐨𝐰 𝐚 𝐯𝐢𝐚𝐛𝐥𝐞 𝐚𝐥𝐭𝐞𝐫𝐧𝐚𝐭𝐢𝐯𝐞 𝐭𝐨 𝐬𝐢𝐥𝐢𝐜𝐨𝐧 𝐬𝐮𝐛𝐬𝐭𝐫𝐚𝐭𝐞𝐬 𝐚𝐧𝐝 𝐬𝐞𝐦𝐢𝐜𝐨𝐧𝐝𝐮𝐜𝐭𝐨𝐫𝐬 𝐟𝐨𝐫 𝐡𝐚𝐧𝐝𝐥𝐢𝐧𝐠 𝐡𝐢𝐠𝐡 𝐯𝐨𝐥𝐭𝐚𝐠𝐞𝐬? Watch this video to see how GaN technology can revolutionize electronics projects. Discover high-performance, cost-effective solutions that overcome silicon's limitations, with insights from Dr. Singh Ravinder Pal, a leading expert in power electronics. Click to register and power your future: https://efy.co.in/ezrscl
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In 1951, the invention of the junction transistor was announced by Dr. William Shockley in Murray Hill, N.J. This new type of transistor overcame the problems of the earlier point-contact transistor. The junction transistor was a three-layer sandwich. The outer layers were semiconductors with too many electrons (known as N-type) and the inner layer was the opposite with too few (known as P-type).They weren't up to the point-contact transistor's ability to handle signals that fluctuated extremely rapidly, but in every other way they were superior. The NPN transistors were much more efficient, used very little power to work, and they were so much quieter that they could handle weaker signals than the type-A transistors ever could.
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Exploring Future Technology: iNEMI/IPC White Paper on Complex Integrated Systems. https://lnkd.in/gS5efxqp IPC #ElectronicsManufacturing #ComplexIntegratedSystems #CIS #TechnologyIntegration #5GmmWave #HighPerformanceComputing #XRDevices #AdvancedDriverAssistanceSystems #IntegratedPhotonics #IndustryCollaboration #TechnologyStandards #ManufacturingInnovation #NextGenElectronics #AIinElectronics #EVAutomotiveApplications
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At this week’s IEEE International Solid-State Circuits Conference, imec presents a unique, low-power ultra-wideband (UWB) receiver chip that is ten times more resilient against Wi-Fi and (beyond) 5G interference. Imec’s breakthrough chip is a major step forward in developing and deploying next-generation UWB applications
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How Optical Module Manufacturers Improve the Reliability of Gigabit Optical Transceivers and 10 Gigabit Optical Transceivers This article will discuss in depth how to improve the reliability of optical transceivers, including material selection, production process optimization, advanced testing technology and the application of stability monitoring systems, etc. https://lnkd.in/gh_3p6nT
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Why is GaN-on-Diamond material the future of chip technology? 🔥 Extreme Thermal Management: Significantly reduces device self-heating, 40-60% 🔌 Record DC Power Dissipation: Handles exceptionally high power levels (56 W/mm), ⚡ Preserved Electrical Properties: Maintains critical electrical performance after Diamond deposition 📈 New Limits: Enabling Continuous Wave (CW) rather than pulsed performance at ever higher frequencies and power levels If you want to dive into the details, read our technical study 👇 https://lnkd.in/g-ScX8JK
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