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Veeco to present on MOCVD GaN at CS International in Brussels, 16-17 April. The demand for GaN based power devices is surging, driven by their superior efficiency and performance compared to traditional silicon devices. These GaN devices are increasingly used in fast chargers, power supplies for data centers, consumer electronics, and electric vehicles. Market projections suggest a growth from $400 million to approximately $2 billion over the next five years. Key to this expansion is not just performance but also cost-effectiveness, with the transition to 300mm wafers seen as a critical step in reducing costs. Veeco is at the forefront of this transition, developing a 300mm single wafer MOCVD technology through its Propel® system, designed to meet the strict requirements of GaN power device manufacturing, including uniformity, throughput, yield, and low operational costs. #galliumnitride #poweric Veeco #MOCVD

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