Join Infineon Technologies July 10th, for an exclusive deep dive into the future of high voltage super-junction MOSFET technology with the introduction of the new "all-in-one" 600 V CoolMOS™ 8 SJ MOSFET product family. Click to Register now! ⬇️ https://bit.ly/3RPzKJm
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Exciting News Alert! We're thrilled to reveal that we've got our hands on Infineon Technologies' second-generation CoolSiC G2 MOSFET, the IMBG120R008M2H 1200V 7.7 mOhm, right here in our labs! Our initial analysis reveals intriguing insights into the CoolSiC G2. While specific on-resistance remains a key metric, it's just one piece of the puzzle. We're exploring factors like conduction performance, switching behavior, and robustness to uncover the true potential of this technology. Read more in our FREE blog. https://bit.ly/3Il1Sz5
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Egrtech has developed a product (EGDR-XXC) that is not only compatible with the existing AGDR-XXC Series IGBT stacks for power converter/inverters but also optimized using the newest technologies to increase reliability. Though it took quite some time to verify the device and several field visits, we succeeded in validating the design over the year and are now increasing our production capability. We can deliver replacement parts right away to minimize system downtime and each one comes with our one-year warranty for new components. Our goal is to manufacture these new EGDR-XXC with Infineon IGBTs at a competitive price. Traditional suppliers sell used and reconditioned parts with a 60-day warranty, while Egrtech offers brand new EGDR-XXC with Infineon IGBT modules at a lower cost with a one-year warranty. www.egrtech.com
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How does the #semiconductor industry overcome the near-term manufacturing limits of device size, scale and speed? Advances in plasma power control technology support process innovation for tomorrow’s most advanced chips. Play the video to learn how the eVoS™ asymmetric bias waveform generator directly controls wafer-bias voltage and removes the limitations of wafer biasing inherent to sinusoidal RF bias installations. bit.ly/3O4UpXW
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Viitor Semiconductor recently unveiled its inaugural line of silicon carbide (SiC) Schottky diodes, introducing the Viitor VCCTxxS65 series. This collection consists of three products housed in through-hole TO-220AC casings, rated at 650V (4A, 8A, and 10A). These broad-bandgap Schottkys present a spectrum of advantages, including significantly improved efficiency and heightened reliability in high-temperature environments. This launch addresses the current market need for decreased operational expenses and minimal maintenance. The applications of these devices extend to Switched Mode Power Supply (SMPS), Solar Inverter, Battery Charger, and UPS systems... Furthermore, their adaptability extends to various circuits, such as boost converters utilized for power factor correction. The exceptional performance of these SiC devices outperforms that of traditional silicon-based products, offering designers an array of unmatched advantages in product performance, such as: • Elimination of reverse recovery. • Robust surge current capability. • Positive Temperature Coefficient. • Minimal heat dissipation requirements. • Effortless parallel operation. 👉 https://bit.ly/3vKsWof
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We've obtained Infineon Technologies' CoolSiC G2 MOSFET, IMBG120R008M2H 1200V 7.7 mOhm, in our labs! Our initial analysis delves into its conduction performance, switching behavior, and robustness, unlocking its true potential. Read more in our FREE blog!
Exciting News Alert! We're thrilled to reveal that we've got our hands on Infineon Technologies' second-generation CoolSiC G2 MOSFET, the IMBG120R008M2H 1200V 7.7 mOhm, right here in our labs! Our initial analysis reveals intriguing insights into the CoolSiC G2. While specific on-resistance remains a key metric, it's just one piece of the puzzle. We're exploring factors like conduction performance, switching behavior, and robustness to uncover the true potential of this technology. Read more in our FREE blog. https://bit.ly/3Il1Sz5
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Transphorm has once again teamed up with Weltrend Semiconductor, Inc. to announce availability of a 100 watt USB-C PD Power Adapter Reference Design that leverages our SuperGaN SiP to achieve 92.7% efficiency in a QRF topology! Weltrend’s two SuperGaN adapter boards to date—100 watts and 65 watts—deploy the same SuperGaN SiP (WT7162RHUG24A), demonstrating how our GaN solutions help help customers achieve economies of scale and lower cost implementations compared to competitive solutions. Philip Zuk, SVP, Business Development and Marketing at Transphorm, shares, “The SiP is a simple, normally-off solution that does not require protection, a driver, or an external controller. Add to that the ability for the same SiP to perform in a 65-watt and 100-watt power adapter board…now we’re seeing the inherent versatility and robustness of GaN really shine. And that only comes from Transphorm’s SuperGaN platform today.” Check out all the details and device specs here: https://lnkd.in/g3spCzcT #GaN #GalliumNitride #SiP #Semiconductor #PowerSupply #Innovation #Technology #TGAN #WBG
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Recruiting IoT/IIoT, Security, Embedded, Network/Device, Cybersecurity, Automotive, ICS/SCADA, Mobile, Cloud, HPC/Supercomputing Talent
#Embedded #Industrial Munich, Germany, and Long Beach, California – 28 February 2024 – Today at the Applied Power Electronics Conference (APEC), Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduced a new product family of Solid-State Isolators to achieve faster and more reliable circuit switching with protection features not available in optical-based solid state relays (SSR). The isolators … Read More → "Infineon introduces new Solid-State Isolators to deliver faster switching with up to 70 percent lower power dissipation" https://lnkd.in/gujE7dzr
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Motor drive applications are taking a leap forward with the launch of the Infineon Technologies AG OptiMOS™ 6 200 V #MOSFET product family. The new portfolio is designed to deliver optimal performance in applications such as e-scooters, micro-EVs, and E-forklifts. The improved conduction losses and switching behavior for these new MOSFETs reduce the electromagnetic interference (EMI) and switching losses.
Infineon Technologies Unveiled 200 V OptiMOS™ 6 MOSFET Family - Power Semiconductors Weekly
https://www.powersemiconductorsweekly.com
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JEDEC recently announced JEP198: Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices. This reflects the industry’s collective effort to ensure the consistent performance of GaN-based devices. PI celebrates this milestone while we remain steadfast in our mission to lead the way in defining reliability for this exciting new technology. Learn more here: https://okt.to/I1ME0t
JEDEC Wide Bandgap Power Semiconductor Committee Publishes a Milestone Document for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices
jedec.org
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JEDEC recently announced JEP198: Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices. This reflects the industry’s collective effort to ensure the consistent performance of GaN-based devices. PI celebrates this milestone while we remain steadfast in our mission to lead the way in defining reliability for this exciting new technology. Learn more here: https://okt.to/7ePAz4
JEDEC Wide Bandgap Power Semiconductor Committee Publishes a Milestone Document for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices
jedec.org
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Owner, Saelig Co. Inc. (T&M)
2wInteresting high voltage MOSFET technology