All About Circuits’ Post

#IntelligentSensorSolutionsExplained While sensors utilizing Optical Emission Spectroscopy (OES) technology are widely recognized in the semiconductor manufacturing industry for their effectiveness, their applicability is constrained to illuminated chambers (typically through a plasma during process) due to their passive nature. In contrast, the innovative Self-Plasma OES technology (SPOES) integrates a micro-plasma generation unit with the conventional OES-based sensor. This advancement expands installation possibilities from lit chamber-only locations to anywhere around a semiconductor tool, unleashing its potential for in-situ process monitoring, leak detection, endpoint detection, etc. 💡 🚀 INFICON proudly incorporates SPOES technology into our cutting-edge optical gas analyzers. The success of this integration is substantiated through the widespread adoption of INFICON SPOES gas analyzers in multiple Tier I semiconductor manufacturers globally. ➡️ Watch our on-demand webinar at: https://lnkd.in/d-YpkJpx #INFICON #SPOES #Quantus #HP100 #Semiconductor #Innovation #Gasanalyzers #Gasanalysis #IntelligentSensorSolutions

SiC MOSFETs have emerged as key components in #powerelectronics, revolutionizing various applications thanks to their superior performance characteristics. #SiC #MOSFETs exhibit remarkable properties making them ideal candidates for power switching devices in high-frequency and high-temperature environments. The ever-growing demand for efficient and reliable power electronic systems in industries such as #electricvehicles, #renewableenergy, and #industrialautomation has intensified the need for a comprehensive analysis of SiC MOSFETs. In this context, Yole Group powered by SERMA TECHNOLOGIES, revealed the first volume of their new product of performance analysis report. In this volume, five 1200V-class SiC discrete MOSFETs (and a reference Si #IGBT device) are evaluated and compared. Find more details here - https://lnkd.in/dsK8q5Py

JEDEC recently announced JEP198: Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices. This reflects the industry’s collective effort to ensure the consistent performance of GaN-based devices. PI celebrates this milestone while we remain steadfast in our mission to lead the way in defining reliability for this exciting new technology. Learn more here: https://okt.to/7ePAz4

Viitor Semiconductor recently unveiled its inaugural line of silicon carbide (SiC) Schottky diodes, introducing the Viitor VCCTxxS65 series. This collection consists of three products housed in through-hole TO-220AC casings, rated at 650V (4A, 8A, and 10A). These broad-bandgap Schottkys present a spectrum of advantages, including significantly improved efficiency and heightened reliability in high-temperature environments. This launch addresses the current market need for decreased operational expenses and minimal maintenance. The applications of these devices extend to Switched Mode Power Supply (SMPS), Solar Inverter, Battery Charger, and UPS systems... Furthermore, their adaptability extends to various circuits, such as boost converters utilized for power factor correction. The exceptional performance of these SiC devices outperforms that of traditional silicon-based products, offering designers an array of unmatched advantages in product performance, such as: • Elimination of reverse recovery. • Robust surge current capability. • Positive Temperature Coefficient. • Minimal heat dissipation requirements. • Effortless parallel operation. 👉 https://bit.ly/3vKsWof

JEDEC recently announced JEP198: Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices. This reflects the industry’s collective effort to ensure the consistent performance of GaN-based devices. PI celebrates this milestone while we remain steadfast in our mission to lead the way in defining reliability for this exciting new technology. Learn more here: https://okt.to/6ED1v8

How does the #semiconductor industry overcome the near-term manufacturing limits of device size, scale and speed? Advances in plasma power control technology support process innovation for tomorrow’s most advanced chips. Play the video to learn how the eVoS™ asymmetric bias waveform generator directly controls wafer-bias voltage and removes the limitations of wafer biasing inherent to sinusoidal RF bias installations. bit.ly/3O4UpXW

JEDEC recently announced JEP198: Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices. This reflects the industry’s collective effort to ensure the consistent performance of GaN-based devices. PI celebrates this milestone while we remain steadfast in our mission to lead the way in defining reliability for this exciting new technology. Learn more here: https://okt.to/FEAzSm

Two very interesting updates in the GaN world from PCIM. Both Vincotech and Texas Instruments have announced GaN based power modules. The devices differ, with the TI product an IPM whilst the Vincotech product is a standard power module. These aren't the first GaN power modules we are seeing on the market, but both encapsulate the trend of the industry towards more integrated solutions. The GaN landscape is very competitive, and innovating in the product line is going to be key for companies in establishing their position.

Transphorm has once again teamed up with Weltrend Semiconductor, Inc. to announce availability of a 100 watt USB-C PD Power Adapter Reference Design that leverages our SuperGaN SiP to achieve 92.7% efficiency in a QRF topology! Weltrend’s two SuperGaN adapter boards to date—100 watts and 65 watts—deploy the same SuperGaN SiP (WT7162RHUG24A), demonstrating how our GaN solutions help help customers achieve economies of scale and lower cost implementations compared to competitive solutions. Philip Zuk, SVP, Business Development and Marketing at Transphorm, shares, “The SiP is a simple, normally-off solution that does not require protection, a driver, or an external controller. Add to that the ability for the same SiP to perform in a 65-watt and 100-watt power adapter board…now we’re seeing the inherent versatility and robustness of GaN really shine. And that only comes from Transphorm’s SuperGaN platform today.” Check out all the details and device specs here: https://lnkd.in/g3spCzcT #GaN #GalliumNitride #SiP #Semiconductor #PowerSupply #Innovation #Technology #TGAN #WBG

This strategic partnership continues to validate the ease of designability and flexibility of #transphorm’s normally off d-mode #supergan technology. Whether using a discrete solution resulting in a 250% size reduction in a high power multi kilo-watt UPS or a powering a 100 watt power adapter with a higher on resistance device than e-mode (supported by fundamental physics) within #weltrend’s integrated QRF SiP Transphorm is leading the way to a future proofed technology.