Chick Webb’s Post

JEDEC recently announced JEP198: Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices. This reflects the industry’s collective effort to ensure the consistent performance of GaN-based devices. PI celebrates this milestone while we remain steadfast in our mission to lead the way in defining reliability for this exciting new technology. Learn more here: https://okt.to/I1ME0t

JEDEC recently announced JEP198: Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices. This reflects the industry’s collective effort to ensure the consistent performance of GaN-based devices. PI celebrates this milestone while we remain steadfast in our mission to lead the way in defining reliability for this exciting new technology. Learn more here: https://okt.to/FEAzSm

JEDEC recently announced JEP198: Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices. This reflects the industry’s collective effort to ensure the consistent performance of GaN-based devices. PI celebrates this milestone while we remain steadfast in our mission to lead the way in defining reliability for this exciting new technology. Learn more here: https://okt.to/6ED1v8

Understanding the failure modes of semiconductor devices like SiC MOSFETs is key to creating screening, qualification and reliability tests. #SiC #MOSFETs #APEC

Gallium nitride power devices have the potential to replace legacy silicon power devices in many power-conversion applications. The much-improved conduction and switching figures of merit (FOMs) with #GaN lead to improved efficiencies, higher power densities and the possibility to operate at much higher switching frequencies, leading to system-level improvements in cost and performance. In this article, we will summarize some recent developments in GaN discussed at the #IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) held Dec. 4–6, 2023. WiPDA US #wipda

Viitor Semiconductor recently unveiled its inaugural line of silicon carbide (SiC) Schottky diodes, introducing the Viitor VCCTxxS65 series. This collection consists of three products housed in through-hole TO-220AC casings, rated at 650V (4A, 8A, and 10A). These broad-bandgap Schottkys present a spectrum of advantages, including significantly improved efficiency and heightened reliability in high-temperature environments. This launch addresses the current market need for decreased operational expenses and minimal maintenance. The applications of these devices extend to Switched Mode Power Supply (SMPS), Solar Inverter, Battery Charger, and UPS systems... Furthermore, their adaptability extends to various circuits, such as boost converters utilized for power factor correction. The exceptional performance of these SiC devices outperforms that of traditional silicon-based products, offering designers an array of unmatched advantages in product performance, such as: • Elimination of reverse recovery. • Robust surge current capability. • Positive Temperature Coefficient. • Minimal heat dissipation requirements. • Effortless parallel operation. 👉 https://bit.ly/3vKsWof

Our SiC MOSFET lineup addresses the growing demand for high-power and high-voltage industrial applications with excellent RDSon temperature stability, fast switching speed, and high short-circuit ruggedness.   And now we’re offering our industry-leading 1200 V silicon carbide MOSFETs in D2PAK-7 surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80 mΩ RDSon values.   SMD packaging like D2PAK-7 are increasingly popular in various industrial applications including electric vehicle (EV) charging, uninterruptible power supplies (UPS) and inverters for solar and energy storage systems (ESS).   This release represents the next step in our strategic partnership with Mitsubishi Electric. We’ve joined forces to push the energy efficiency and electrical performance of SiC wide bandgap semiconductors to the next level, while additionally future-proofing production capacity for this technology in response to ever-growing market demand.   Learn more about our growing #SiC MOSFET portfolio and plans - https://lnkd.in/ehDDhKJ7   #powersemiconductor #greenerfuture 

So, the biggest barrier for SiC adoption is identified as price. But what it really means is that current SiC pricing justifies its adoption in certain end applications, where it’s benefits outweigh its cost. A lower price point will enable more end applications to use SiC and if we achieve Si parity then SiC will be used in almost all applications.

Upcoming Webinar on the Future of EV Powertrains: Thursday 11 July 2024 - SiC, GaN, and the Evolution of Power Electronics. In this webinar, IDTechEx will summarize the current market landscape concerning the wide bandgap semiconductors SiC and GaN and other EV power electronics market trends. http://dlvr.it/T8hxLg

Transphorm Inc. announced availability of two new SuperGaN® devices in a 4-lead TO-247 package (TO-247-4L). The new TP65H035G4YS and TP65H050G4YS FETs offer a 35 mOhm and 50 mOhm on resistance respectively, complete with a kelvin-source terminal that gives customers versatile switching capabilities with even lower energy losses. The new products will run on Transphorm’s well-established GaN-on-Silicon substrate manufacturing process that is cost-effective, reliable, and well-suited for high volume manufacturing on silicon production lines. The 50 mOhm TP65H050G4YS FET is currently available while the 35mOhm TP65H035G4YS FET is sampling and slated for release in calendar Q1’2024.