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Simple-to-drive GaN shrinks BOM in power designs – Cambridge GaN Devices Ltd tells all! At PCIM 2024, ipXchange caught up with Cambridge GaN Devices and discussed dynamic transient voltages with Nare Gabrielyan PhD and Peter A. Di Maso. Suffice to say, Cambridge GaN Devices’ highly integrated solution handles them very well. Best of all, these GaN transistors don’t require a specialised gate driver or negative power rail, and this drastically reduces BOM and therefore the space required for integrating GaN into your design. It’s high-efficiency high power density turned up to 11! Learn more and apply to evaluate this technology on the ipXchange website here: https://lnkd.in/e8RR84cZ Keep designing! #GaN #SiC #GalliumNitride #SiliconCarbide #powerelectronics #powerconversion #ACDC #DCDC #semiconductor #powersemiconductor #powersemiconductors #powerconverter #electronics #electronicsdesign #electronicsengineering #disruptivetechnology 

Simple-to-drive GaN shrinks BOM in power designs

Simple-to-drive GaN shrinks BOM in power designs

https://ipxchange.tech

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