Marcus Webster’s Post

#Automotive #Embedded Munich, Germany – 12 March 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the new CoolSiC™ MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers’ demand for increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The CoolSiC MOSFETs offer a higher DC … Read More → "Infineon’s new CoolSiC™ MOSFETs 2000 V offer increased power density without compromising system reliability" https://lnkd.in/gETnQdeA

This month How2Power.com marks its 15th anniversary. In the July issue of How2Power Today I reflect on some industry happenings from the year we launched How2Power before presenting our newest articles. These features discuss use of resonant gate drive to enhance robustness of GaN power stages, modeling of multi-phase converters as their single-phase equivalents to simplify stability analysis, and more on transformer design for the open-source power inverter. This July newsletter also offers a book review for Principles of Power Electronics, Second Edition, news about the upcoming EMC+SIPI and the EOS/ESD conferences, the latest power component introductions and much more. See https://lnkd.in/ecnghTH

I am very proud to share with you that our recent paper entitled “A High-Efficient Single-Switch Switched-Capacitor Partial Power Converter for On-Board Chargers” has been published in early access in the IEEE Transactions on Power Electronics. The paper was co-written by colleagues Ademir Toebe and Pedro Henrique Bulegon Löbler, under the supervision of Profs. Luciano, Mário, and Cassiano. In summary, it proposes a single-switch switched-capacitor (SC) series-connected partial power converter (S-PPC) for the dc–dc stage of an on-board charger (OBC). The proposed step-down S-PPC is transformerless, with the SC cell providing the necessary isolation to prevent a short circuit between the low and high potentials of the electric vehicle (EV) battery pack. To validate the analyses, a 3 kW prototype was built and tested. It achieved rated and peak efficiencies of around 98.7% and 99.6%, respectively. Compared to previously published S-PPCs for EV applications, the SC S-PPC employs fewer semiconductors (only one active switch), which reduces its complexity and cost. https://lnkd.in/dFkXdUmG

Transphorm has once again teamed up with Weltrend Semiconductor, Inc. to announce availability of a 100 watt USB-C PD Power Adapter Reference Design that leverages our SuperGaN SiP to achieve 92.7% efficiency in a QRF topology! Weltrend’s two SuperGaN adapter boards to date—100 watts and 65 watts—deploy the same SuperGaN SiP (WT7162RHUG24A), demonstrating how our GaN solutions help help customers achieve economies of scale and lower cost implementations compared to competitive solutions. Philip Zuk, SVP, Business Development and Marketing at Transphorm, shares, “The SiP is a simple, normally-off solution that does not require protection, a driver, or an external controller. Add to that the ability for the same SiP to perform in a 65-watt and 100-watt power adapter board…now we’re seeing the inherent versatility and robustness of GaN really shine. And that only comes from Transphorm’s SuperGaN platform today.” Check out all the details and device specs here: https://lnkd.in/g3spCzcT #GaN #GalliumNitride #SiP #Semiconductor #PowerSupply #Innovation #Technology #TGAN #WBG

This strategic partnership continues to validate the ease of designability and flexibility of #transphorm’s normally off d-mode #supergan technology. Whether using a discrete solution resulting in a 250% size reduction in a high power multi kilo-watt UPS or a powering a 100 watt power adapter with a higher on resistance device than e-mode (supported by fundamental physics) within #weltrend’s integrated QRF SiP Transphorm is leading the way to a future proofed technology.

The superior switching speed of GaN HEMTs can be a double-edged sword. Together with their low Vgs(th), it makes discrete e-GaN HEMTs susceptible to false turn-on events, thus requiring a negative gate voltage for safe turn-off and preventing shoot-through. To solve this problem, CGD provides a very simple solution in device level, taking the burden away from the power electronics design engineer. Nirmana Perera gave a talk at APEC Applied Power Electronics Conference and Exposition demonstrating that ICeGaN™ devices with a monolithically-integrated Miller Clamp provides a powerful solution to prevent dv/dt induced false turn-on events without the need of negative gate voltages. Check our whitepaper WP2201 for more details: https://lnkd.in/gcfqyipt #apec24 #ICeGaN #emodeGaN #galliumnitride #innovation #efficiency

Need to make measurements on wide-bandgap power devices? This video shows the Teledyne LeCroy DL-ISO probe, a high-voltage, isolated alternative to Tektronix IsoVu probes, ideal for characterizing GaN and SiC devices by mitigating common-mode noise and enabling safe floating gate-drive measurements. Watch now to see the DL-ISO in action and learn how it can improve your power device testing. #GaN #SiC #powerelectronics

Proud to put this repost on as it's work done by my team at MI (#marketintelligence). If you think MI can help your organisation through similar research or insight gathering, please email [email protected] or reach out to my colleagues Chris Davies (commercial) or John Robins (collaborative) on this platform. #csacatapult #hydrogen #compoundsemiconductors #greenhydrogen #netzero #marketinsight #freeresesearch #whitepaper #fridayfeelings #hydrogeninnovationinitiative #ukri #innovateuk

Happy to share our recent work on a tunnel junction-based GaN micro-light emitting transistor (uLET) that offers a voltage/capacitive control scheme for GaN uLEDs with reduced switching charge. The monolithic integration of an n-channel GaN FET structure on top of a standard Ga-polar LED+TJ structure allows the FET channel charge to control the current into the LED active region. This three-terminal device enables direct optical modulation of the uLED through gate voltage control. The monolithic approach can be applied to standard GaN uLEDs of any wavelength, polychromatic structures, or any number of active region LEDs. While microLED displays benefit from this technology, Li-fi/VLC or on-chip communication systems can also leverage the increased switching speed of the devices. I extend my gratitude to my supervisor Siddharth Rajan, my labmates, and our collaborators for their support in this project. #microLED #display #uLET For more details on the device's performance, check out our published article:

Introducing GaAs pHEMT MMIC Multipliers for High-Frequency Applications! Switch up your RF control solutions a series of GaAs pHEMT MMIC multipliers engineered to excel in high-frequency applications. These advanced multipliers, available through HASCO Components, provide exceptional performance and versatility for various critical applications. High Efficiency: All multipliers in this series are designed to operate with exceptional efficiency, minimizing power dissipation. Integrated Buffers: Integrated input and output buffers enhance performance, enabling high output power at low drive levels. Wideband Coverage: Covering the E-band, V-band, and W-band, these multipliers offer versatility across a broad range of frequencies. These GaAs pHEMT MMIC multipliers are engineered to meet the demanding requirements of high-frequency applications, ensuring reliable and efficient signal generation. Unlock the potential of your RF control applications with the MMIC Multipliers, exclusively available through HASCO Components. Experience unbeatable versatility, performance, and innovation. #HASCO #Components #MMIC #Multipliers #harmonic #isolation #power #engineering #rfengineering #highfrequency #electronics #reliability #signal #testandmeasurement https://lnkd.in/d9kSYFNq