Mark Dougherty’s Post

#TokyoElectron Launches Acrevia™, a Gas Cluster Beam System for Ultra-Fine Patterning in EUV Lithography. AcreviaTM is a gas cluster beam (GCB) system designed for modifying the critical dimensions and shape of ultra-fine patterns formed by EUV lithography. #TEL’s unique GCB technology offers unprecedented low-damage processing and enables further device scaling, yield improvement, and reduced EUV patterning costs for our customers. AcreviaTM is deployed in the semiconductor manufacturing process flow following a single EUV lithography patterning and subsequent dry etching step. For more details: https://lnkd.in/gwg94-A9 #TechnologyEnablingLife

I, as many others, saw the news about Canon’s Nanoimprint Lithography technology. The news and articles did not explain, to me, how it works and how to compare it to the "normal" lithography using ASML EUV machines to produce the most advanced silicon technologies today. I found this video very educational and as far as I can judge, probably a good explanation of the NIL and the current state of it. I would recommend watching in if the news around Nanoimprint lithography got your interest. https://lnkd.in/d-5B3tZZ If you know more about this technology and disagree with the video, please comment. #nil #lithography #canon #asml #semiconductor

Interesting times ahead for the semiconductor industry, with a potential challenger for EUV Lithography in the market. Only things that remain to be seen are the throughput and defects of Nanoimprint Lithography and if they can match the level of EUVL. https://lnkd.in/eca3Gia9

'[Canon's] new chipmaking machines can produce circuits equivalent to 5-nanometer scale when using extreme ultraviolet lithography (EUV), a field dominated by industry leader ASML Holding NV. Canon expects its device to reach next-generation 2nm production...' '... skips photolithography altogether and instead impresses the desired circuit pattern onto the silicon wafer. Because of its novelty, it’s unlikely to be expressly forbidden by existing trade curbs. 'Canon will now have to prove that it has solved the problems [with its nanoimprint technique], such as high rates of defects, that plagued past efforts'. https://archive.md/6xlpR

Next to study: In EUV lithography, stochastically generated defects (stochastic defects) are a significant issue. In this study, the formation of the latent images of line-and-space resist patterns was simulated to assess the dependence of defect risks on the conditions of resist interfaces. The protected unit distribution was calculated on the basis of the sensitization and reaction mechanisms of chemically amplified EUV resists using a Monte Carlo method. The pinching and bridging risks were calculated to be 7.4 × 10−3–2.0 × 10−2 and 1.5 × 10−3–2.6 × 10−1, respectively, depending on the boundary conditions of low-energy secondary electrons at the interfaces. Using the obtained defect risks, we roughly estimated that the impacts of interfacial effects on pinching and bridging probabilities for low-energy secondary electrons were more than one order of magnitude and more than six orders of magnitude, respectively. Controlling the low-energy electrons at the interfaces is important for the suppression of stochastic defects. https://lnkd.in/g6N4G_CE

The pursuit of Moore's Law, which posits the doubling of transistors on a microchip approximately every two years, has faced significant challenges as we delve into the realms of angstrom and atomic-level nodes. However, recent innovations in the field of lithography, particularly through the use of anamorphic lenses, along with advancements in materials science and metrology, are offering promising paths to continue this trend. The introduction of anamorphic lenses in lithography represents a pivotal leap in our ability to pattern silicon wafers with unprecedented precision. These lenses, characterized by their ability to unevenly magnify images in the horizontal and vertical planes, allow for the manipulation of extreme ultraviolet (EUV) light in ways that were previously unattainable. This is especially beneficial for integrating circuitry into increasingly smaller areas on silicon wafers, a critical requirement as we push towards angstrom-level nodes. The use of these lenses in lithography not only enhances the resolution and depth of focus during the chip fabrication process but also significantly increases the throughput by enabling more efficient use of the silicon wafer area. This means that more chips can be produced from a single wafer, improving the overall efficiency and cost-effectiveness of semiconductor manufacturing. Another groundbreaking advancement is the development of metal-oxide resists for use in lithography. These resists are designed to reduce the extreme ultraviolet (EUV) dose required for patterning, which is a major step forward in reducing operational costs and improving the environmental footprint of chip manufacturing. By requiring a lower EUV dose, these resists enable faster exposure times and reduce the wear and tear on expensive EUV lithography machines, thus extending their operational lifespan and reducing downtime. This development not only increases the efficiency of the semiconductor production process but also leads to the production of chips with finer features, meeting the demands of high-performance computing and mobile devices. Metrology, the science of measurement, plays a crucial role in the semiconductor manufacturing process, especially as we move towards high-NA (Numerical Aperture) EUV lithography. Advanced inspection techniques, coupled with machine learning algorithms, are revolutionizing the way we detect and correct manufacturing defects. Integration of anamorphic lenses in lithography, the development of metal-oxide resists, and advancements in metrology and inspection techniques are key factors propelling the semiconductor industry forward. #euv #duv #hnaEUV #lithography #asml #semiconductormanufacturing #semiconductor #mooreslaw #innovation

Soft Lithography creates three-dimensional patterns and structures at the microscale and nanoscale levels. Until #micro3Dprinting, soft lithography was needed to produce #microfluidic devices, #microarrays, and microelectromehanical systems. Our new blog post compares #softlithography and #3Dprinting so you can choose the best technology for your application. Read the full post: https://ow.ly/6vJm50PwFVK

🔎 Narrowing the distance with ASML? Canon, a leading global manufacturer of lithography equipment, recently unveiled its Nano-imprint Lithography (NIL) semiconductor equipment in October. 📢 The CEO of Canon delved deeper into the specifics in a recent interview. Interestingly, he drew a comparison between the NIL equipment and ASML’s EUV equipment, highlighting a potential cost advantage of one digit. 💡 Explore more his insights here: https://buff.ly/3RVD4mE .

For advanced node EUV lithography, the EUV light itself doesn’t directly generate the images, but acts through secondary electrons which are released as a result of ionization by incoming EUV photons. Learn more about electrons, photo defects and lithography in this semiwiki article. #euv #asml #duv #lithography #electrons #semiconductors #semiconductormanufacturing Jordy Beuving Mike Rosa Frederick Chen Robert Quinn Daniel Nenni https://lnkd.in/gNrHbjWS