Viitor Semiconductor’s Post

Motor drive applications are taking a leap forward with the launch of the Infineon Technologies AG OptiMOS™ 6 200 V #MOSFET product family. The new portfolio is designed to deliver optimal performance in applications such as e-scooters, micro-EVs, and E-forklifts. The improved conduction losses and switching behavior for these new MOSFETs reduce the electromagnetic interference (EMI) and switching losses.

Uncover the intricate ecosystem changes required to harness #SiC's potential, including innovations in digital control, #gatedrivers, and thermal management, with insights from CISSOID Power Semiconductors, a leader in high-density power switching and motor-control systems.

Leapers Semiconductor announced a new series of 1400V #SiC power modules in already familiar E0 and ED3S packages. Today some applications tend to increase bus voltage, and using 1200V SiC power modules can no longer correspond to voltage requirements. Using 1700V SiC devices can solve the problem, but it comes with a price. At the moment the new series 1400V SiC modules come in Half-Bridge, H-Bridge, and Boost topologies.

Transphorm Inc. announced availability of two new SuperGaN® devices in a 4-lead TO-247 package (TO-247-4L). The new TP65H035G4YS and TP65H050G4YS FETs offer a 35 mOhm and 50 mOhm on resistance respectively, complete with a kelvin-source terminal that gives customers versatile switching capabilities with even lower energy losses. The new products will run on Transphorm’s well-established GaN-on-Silicon substrate manufacturing process that is cost-effective, reliable, and well-suited for high volume manufacturing on silicon production lines. The 50 mOhm TP65H050G4YS FET is currently available while the 35mOhm TP65H035G4YS FET is sampling and slated for release in calendar Q1’2024.

𝘿𝙤 𝙮𝙤𝙪 𝙪𝙣𝙙𝙚𝙧𝙨𝙩𝙖𝙣𝙙 𝙂𝙖𝙉? 𝗜𝘀 𝗶𝘁 𝘁𝗶𝗺𝗲 𝗳𝗼𝗿 𝘆𝗼𝘂 𝘁𝗼 𝗺𝗮𝗸𝗲 𝘁𝗵𝗲 𝘀𝘄𝗶𝘁𝗰𝗵? Gallium nitride (GaN), with the chemical formula GaN, stands as a crystal-like semiconductor material with unique properties. Initially employed in LEDs during the 1990s, GaN has evolved into a revolutionary material, transcending its use in solar panels to now replacing silicon in transistors. 𝗔𝗱𝘃𝗮𝗻𝘁𝗮𝗴𝗲𝘀 𝗼𝗳 𝗚𝗮𝗡 𝗧𝗲𝗰𝗵𝗻𝗼𝗹𝗼𝗴𝘆 The reduction in transistor size allows GaN USB chargers to be physically smaller, a notable departure from older silicon technology chargers. More importantly, the increased efficiency is a game-changer, as it minimizes waste heat production, addressing concerns of overheating and reducing the need for excessive cooling. GaN technology boasts an impressive capability to handle modern USB-C chargers, accommodating power loads of 100W and beyond. #zutBe #GaN #techadvancements #techexplained

Is SiC the key to solving EV battery management problems?🤔 SiCs are known to have higher efficiency, higher power density, better thermal performance, and lower total system cost for powertrains compared to traditional silicon semiconductors. However, the SiC market is relatively small and this rapid growth presents a significant challenge for the SiC wafer market to expand tenfold to keep pace with demand. 😉 Learn more about the latest trend regarding SiCs in the EV market: https://lnkd.in/gawc6TvN #EVMarket #SiCRevolution #CleanEnergy #OneIBS

Discover how gate driver power supplies for Silicon Carbide (SiC) and Gallium Nitride (GaN) devices must meet unique bias requirements. Understanding these key considerations is crucial for optimizing SiC and GaN applications. Click the link to learn more and stay ahead in the world of wide-bandgap semiconductors. https://bit.ly/3XnF2Q7 #RECOM #Power #Blog #SiC #GaN #WideBandgap

Transphorm has once again teamed up with Weltrend Semiconductor, Inc. to announce availability of a 100 watt USB-C PD Power Adapter Reference Design that leverages our SuperGaN SiP to achieve 92.7% efficiency in a QRF topology! Weltrend’s two SuperGaN adapter boards to date—100 watts and 65 watts—deploy the same SuperGaN SiP (WT7162RHUG24A), demonstrating how our GaN solutions help help customers achieve economies of scale and lower cost implementations compared to competitive solutions. Philip Zuk, SVP, Business Development and Marketing at Transphorm, shares, “The SiP is a simple, normally-off solution that does not require protection, a driver, or an external controller. Add to that the ability for the same SiP to perform in a 65-watt and 100-watt power adapter board…now we’re seeing the inherent versatility and robustness of GaN really shine. And that only comes from Transphorm’s SuperGaN platform today.” Check out all the details and device specs here: https://lnkd.in/g3spCzcT #GaN #GalliumNitride #SiP #Semiconductor #PowerSupply #Innovation #Technology #TGAN #WBG

This strategic partnership continues to validate the ease of designability and flexibility of #transphorm’s normally off d-mode #supergan technology. Whether using a discrete solution resulting in a 250% size reduction in a high power multi kilo-watt UPS or a powering a 100 watt power adapter with a higher on resistance device than e-mode (supported by fundamental physics) within #weltrend’s integrated QRF SiP Transphorm is leading the way to a future proofed technology.

Our SiC MOSFET lineup addresses the growing demand for high-power and high-voltage industrial applications with excellent RDSon temperature stability, fast switching speed, and high short-circuit ruggedness.   And now we’re offering our industry-leading 1200 V silicon carbide MOSFETs in D2PAK-7 surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80 mΩ RDSon values.   SMD packaging like D2PAK-7 are increasingly popular in various industrial applications including electric vehicle (EV) charging, uninterruptible power supplies (UPS) and inverters for solar and energy storage systems (ESS).   This release represents the next step in our strategic partnership with Mitsubishi Electric. We’ve joined forces to push the energy efficiency and electrical performance of SiC wide bandgap semiconductors to the next level, while additionally future-proofing production capacity for this technology in response to ever-growing market demand.   Learn more about our growing #SiC MOSFET portfolio and plans - https://lnkd.in/ehDDhKJ7   #powersemiconductor #greenerfuture