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Hgtp20n36g3vl Igbt Siemens Ems3132
Hgtp20n36g3vl Igbt Siemens Ems3132
Features
Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection TJ = 175oC Ignition Energy Capable
Packages
JEDEC TO-220AB
E C G
COLLECTOR (FLANGE)
JEDEC TO-263AB
Description
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit. PACKAGING PART NUMBER HGTP20N36G3VL HGT1S20N36G3VL HGT1S20N36G3VLS PACKAGE TO-220AB TO-262AA TO-263AB BRAND 20N36GVL 20N36GVL 20N36GVL
COLLECTOR (FLANGE) G E COLLECTOR (FLANGE)
JEDEC TO-262AA
E C G
Symbol
COLLECTOR
EMITTER
TC = +25oC, Unless Otherwise Specified HGTP20N36G3VL HGT1S20N36G3VL HGT1S20N36G3VLS 395 28 37.7 26 10 21 16 500 150 1.0 -40 to +175 260 6
Collector-Emitter Bkdn Voltage At 10mA, RGE = 1k . . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . IC25 At VGE = 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . .IC100 Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Inductive Switching Current At L = 2.3mH, TC = +25o C . . . . . . . . . . . . . . . . . . . . . . ISCIS At L = 2.3mH, TC = +150oC . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . EAS Power Dissipation Total At TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Electrostatic Voltage at 100pF, 1500 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD NOTE: May be exceeded if IGEM is limited to 10mA.
2004 Fairchild Semiconductor Corporation
UNITS V V A A V A A mJ W W/oC o C o C KV
Gate Charge
QG(ON)
28.7
nC
Collector-Emitter Clamp Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current
BVCE(CL)
TC = +175oC TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC TC = +25oC
330
360
415
BVECS ICES
28 1.1
V
A A
mA V V V V V
VGE(TH)
Gate Series Resistance Gate-Emitter Resistance Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load
10
330 12
75 20
500 14
30
1000
k
A
30
V
s
IC = 10A, RG = 25, L = 550H, RL = 26.4, VGE = 5V, VCL = 300V, TC = +175oC L = 2.3mH, VG = 5V, RG = 1K TC = +150oC TC = +25oC
15
ISCIS
16 21 -
1.0
o
A A C/W
Thermal Resistance
RJC
30 TC = 175oC 20 TC = 25oC
40
30
175oC
20
10
10
2.2 VCE(SAT) , SATURATION VOLTAGE (V) ICE = 10A ICE = 20A 2.1 2.0 1.9 1.8 1.7 1.6 1.5 -25 25 75 125 175 -25 25 75 125 175 TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) VGE = 4.5V 5.0V VGE = 4.5V VGE = 4.0V
1.2
VGE = 5.0V
1.1
20
10
0 25
50
75
100
125
150
175
18
+25oC 400
40 30 +25oC 20 +150oC 10
100
0 0 2 4 6 8 10 INDUCTANCE (mH)
2 3 INDUCTANCE (mH)
1600 FREQUENCY = 1MHz 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 CRES 0 0 5 20 10 15 VCE , COLLECTOR-TO-EMITTER VOLTAGE (V) 25 COES CIES
+150 C
100 0.5 0.2 PD 10-1 0.1 0.05 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC t2 t1
6 4
2 1
10-2 10-5
0 0 10
30
40
345
C RGEN = 25 5V RG DUT G
VCC 300V
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I9