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G. H.

RAISONI POLYTECHNIC, JALGAON


FIRST CLASS TEST (2013-14) SUBJECT: -AC MACHINES SEMESTER: -5
TH

17316

G. H. RAISONI POLYTECHNIC, JALGAON


FIRST CLASS TEST (2013-14) SUBJECT: -ELECTRONIC DEVICES & CIRCUITS

17316

TIME: - 1 HOUR MARKS: - 25

SEMESTER: -2nd COURSE: -EJ3G

TIME: - 1 HOUR MARKS: - 25

COURSE: -EE5E

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Instructions:1. All Questions are compulsory. 2. Figures to the right indicates full marks 3. Use of non-programmable calculator is permissible. Q-1) Attempt any Three: a) Draw the symbols of i) NPN transistor ii) P-ch JFET iii) N-ch DMOSFET b) Define for a transistor i) Rise time ii) Storage time iii) Delay time c) Define i)RDS ii) gm iii) IDSS d) Compare Emitter, Base, Collector w.r.t. their width & doping level. Q-2) Attempt any Two: a) Explain the operation of NPN Transistor. b) Draw the experimental set up to observe i/p-o/p characteristics of Common base configuration & draw its i/p o/p characteristics. c) Explain the operation of N-ch JFET. Q-3) Attempt any Two: b) Differentiate between BJT & JFET. c) Explain the Voltage Divider Biasing of BJT. (04*02=08) a) Explain the operation of N-ch Depletion type MOSFET (04*02=08) (03*03=09)

Instructions:4. All Questions are compulsory. 5. Figures to the right indicates full marks 6. Use of non-programmable calculator is permissible. Q-1) Attempt any Three: e) Draw the symbols of i) NPN transistor ii) P-ch JFET iii) N-ch DMOSFET f) Define for a transistor i) Rise time ii) Storage time iii) Delay time g) Define i)RDS ii) gm iii) IDSS h) Compare Emitter, Base, Collector w.r.t. their width & doping level. Q-2) Attempt any Two: d) Explain the operation of NPN Transistor. e) Draw the experimental set up to observe i/p-o/p characteristics of Common base configuration & draw its i/p o/p characteristics. f) Explain the operation of N-ch JFET. Q-3) Attempt any Two: e) Differentiate between BJT & JFET. f) Explain the Voltage Divider Biasing of BJT. (04*02=08) d) Explain the operation of N-ch Depletion type MOSFET (04*02=08) (03*03=09)

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