N-Channel JFET: Siliconix

2N3819
Siliconix
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
S-52424Rev. C, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors
1
N-Channel JFET
PRODUCT SUMMARY
V
GS(off)
(V) V
(BR)GSS
MIN (V) g
fs
MIN (MS) I
DSS
MIN (MA)
v 8 25 2 2
FEATURES BENEFITS APPLICATIONS
D Excellent High-Frequency Gain: Gps 11 dB @
400 MHz
D Very Low Noise: 3 dB @ 400 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: A
V
= 60 @ 100 mA
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
DESCRIPTION
The 2N3819 is a low-cost, all-purpose JFET which offers
good performance at mid-to-high frequencies. It features low
noise and leakage and guarantees high gain at 100 MHz.
Its TO-226AA (TO-92) package is compatible with various
tape-and-reel options for automated assembly (see
Packaging Information). For similar products in TO-206AF
(TO-72) and TO-236 (SOT-23) packages, see the
2N4416/2N4416A/SST4416 data sheet.
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage 25 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current 10 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature 55 to 150_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature 55 to 150_C . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
from case for 10 sec.) 300_C . . . . . . . . . . . . . . . . . .
Power Dissipation
A
350 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
A. Derate 2.8 mW/_C above 25_C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70238.
www.agelectronica.com www.agelectronica.com

Siliconix
2N3819
2
SPECIFICATIONS
A
LIMITS
PARAMETER SYMBOL TEST CONDITIONS MIN TYP
B
MAX UNIT
STATIC
Gate-Source Breakdown Voltage V
(BR)GSS
I
G
= 1 mA , V
DS
= 0 V 25 35
V
Gate-Source Cutoff Voltage V
GS(off)
V
DS
= 15 V, I
D
= 2 nA 3 8
V
Saturation Drain Current
C
I
DSS
V
DS
= 15 V, V
GS
= 0 V 2 10 20 mA
Gate Reverse Current I
GSS
V
GS
= 15 V, V
DS
= 0 V 0.002 2 nA
Gate Reverse Current I
GSS
T
A
= 100_C 0.002 2 mA
Gate Operating Current
D
I
G
V
DG
= 10 V, I
D
= 1 mA 20
pA
Drain Cutoff Current I
D(off)
V
DS
= 10 V, V
GS
= 8 V 2
A
Drain-Source On-Resistance r
DS(on)
V
GS
= 0 V, I
D
= 1 mA 150 W
Gate-Source Voltage V
GS
V
DS
= 15 V, I
D
= 200 mA 0.5 2.5 7.5
V
Gate-Source Forward Voltage V
GS(F)
I
G
= 1 mA , V
DS
= 0 V 0.7
V
DYNAMIC
Common-Source Forward Transconductance
D
g
fs V
DS
= 15 V
f = 1 kHz 2 5.5 6.5
mS Common Source Forward Transconductance g
fs V
DS
= 15 V
V
GS
= 0 V
f = 100 MHz 1.6 5.5
mS
Common-Source Output Conductance
D
g
os
GS
f = 1 kHz 25 50 mS
Common-Source Input Capacitance C
iss
V
DS
= 15 V V
GS
= 0 V f = 1 MHz
2.2 8
pF
Common-Source Reverse Transfer Capacitance C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
0.7 4
F
Equivalent Input Noise Voltage
D
e
n
V
DS
= 10 V, V
GS
= 0 V, f = 100 Hz 6
nV
Hz
Notes
A. T
A
= 25_C unless otherwise noted. NH
B. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
C. Pulse test: PW v300 ms, duty cycle v2%.
D. This parameter not registered with JEDEC.
TYPICAL CHARACTERISTICS
OnResistance and Output Conductance
vs. GateSource Cutoff Voltage
500
0 10 6
300
0
100
60
0
r
DS
g
os
r
DS
@ I
D
= 1 mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
Drain Current and Transconductance
vs. GateSource Cutoff Voltage
20
0 10
0
10
0

S
a
t
u
r
a
t
i
o
n

D
r
a
i
n

C
u
r
r
e
n
t

(
m
A
)
I
D
S
S
g
f
s

F
o
r
w
a
r
d

T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e

(
m
S
)
I
DSS
g
fs
V
GS(off)
Gate-Source Cutoff Voltage (V)
80
40
20
400
100
200
2 4 8
V
GS(off)
Gate-Source Cutoff Voltage (V)
6
8
4
2
6 2 4 8
12
16
4
8
I
DSS
@ V
DS
= 15 V, V
GS
= 0 V
g
fs
@ V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
r
D
S
(
o
n
)

D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e

(
)
W
S
)
g
o
s

O
u
t
p
u
t

C
o
n
d
u
c
t
a
n
c
e

(
m

2N3819
Siliconix
3
10
0
2
8
6
4
Gate Leakage Current
0 10 20
5 mA
0.1 mA
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
0.1 pA

G
a
t
e

L
e
a
k
a
g
e
I
G
0.1 mA
I
GSS
@ 25_C
T
A
= 25_C
T
A
= 125_C
5 mA
I
GSS
@
125_C
Output Characteristics Output Characteristics
CommonSource Forward
Transconductance vs. Drain Current
0.1 1 10
10
2
0
g
f
s

F
o
r
w
a
r
d

T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e

(
m
S
)
V
GS(off)
= 3 V
T
A
= 55_C
125_C
10
0 4 10
0
0.2 V
0.4 V
0.6 V
0.8 V
1.2 V
1.0 V
V
GS
= 0 V
15
0 10
0
0.6 V
0.9 V
1.2 V
1.5 V
1.8 V
V
GS
= 0 V
0.3 V
V
DG
Drain-Gate Voltage (V) I
D
Drain Current (mA)
V
DS
Drain-Source Voltage (V) V
DS
Drain-Source Voltage (V)

D
r
a
i
n

C
u
r
r
e
n
t

(
m
A
)
I
D

D
r
a
i
n

C
u
r
r
e
n
t

(
m
A
)
I
D
V
GS
Gate-Source Voltage (V)

D
r
a
i
n

C
u
r
r
e
n
t

(
m
A
)
I
D
Transfer Characteristics
V
GS(off)
= 2 V
T
A
= 55_C
125_C
V
GS

D
r
a
i
n

C
u
r
r
e
n
t

(
m
A
)
I
D
Transfer Characteristics
T
A
= 55_C
125_C
V
GS(off)
= 3 V
8
6
4
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= 2 V V
GS(off)
= 3 V
2
8
6
4
2 6 8 4 2 6 8
3
12
9
6
V
DS
= 10 V V
DS
= 10 V
10
0
2
8
6
4
0 0.8 2 0 3 0.4 1.2 1.6 1.2 0.6 1.8 2.4
1 mA
1 mA
25_C
25_C
25_C
1.4 V

Siliconix
2N3819
4
V
GS
Transconductance vs. GateSource Voltage
10
0 0.8 2
8
0
V
GS(off)
= 2 V
T
A
= 55_C
125_C
g
f
s

F
o
r
w
a
r
d

T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e

(
m
S
)
V
GS
Transconductance vs. GateSource Voltgage
10
3 0.6 0
0
T
A
= 55_C
125_C
V
GS(off)
= 3 V
g
f
s

F
o
r
w
a
r
d

T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e

(
m
S
)
I
D
Drain Current (mA) I
D
Drain Current (mA)
OnResistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
0.1 1 10
300
0
T
A
= 55_C
3 V
V
GS(off)
= 2 V
10 0.1
100
0
Assume V
DD
= 15 V, V
DS
= 5 V
R
L
+
10 V
I
D
V
GS(off)
= 2 V
3 V
A
V

V
o
l
t
a
g
e

G
a
i
n
CommonSource Input Capacitance
vs. GateSource Voltage
CommonSource Reverse Feedback
Capacitance vs. GateSource Voltage
5
0 20 4
0

I
n
p
u
t

C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
C
i
s
s
f = 1 MHz
V
DS
= 0 V
V
DS
= 10 V
3.0
0 20
0

R
e
v
e
r
s
e

F
e
e
d
b
a
c
k

C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
C
r
s
s
V
DS
= 0 V
V
DS
= 10 V
V
GS
Gate-Source Voltage (V) V
GS
f = 1 MHz
V
DS
= 10 V
f = 1 kHz
V
DS
= 10 V
f = 1 kHz
6
4
2
240
180
120
60
8
6
4
2
80
60
40
20
1
0.4 1.6 1.2
1.2 1.8 2.4
4
3
2
1
8 12 16 4 8 12 16
2.4
1.8
1.2
0.6
A
V
+
g
fs
R
L
1 ) R
L
g
os
25_C 25_C
r
D
S
(
o
n
)

D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e

(
)
W

2N3819
Siliconix
5
Reverse Admittance Output Admittance
Input Admittance Forward Admittance
100
10
1
0.1
100 1000
b
is
g
is
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
(
m
S
)
100
10
1
0.1
100
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
(
m
S
)
b
is
g
fs
10
1
0.1
0.01
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
b
rs
g
rs
10
1
0.1
0.01
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
b
os
g
os
f Frequency (MHz) f Frequency (MHz)
f Frequency (MHz) f Frequency (MHz)
Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current
10 100 1 k 100 k 10 k
20
0
I
D
= 5 mA
V
DS
= 10 V
20
0
0.1 1 10
T
A
= 55_C
125_C
V
GS(off)
= 3 V
I
D
Drain Current (mA) f Frequency (Hz)
(
m
S
)
(
m
S
)
200 500 1000 200 500
100 1000 100 200 500 1000 200 500
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= 3 V
16
12
8
4
16
12
8
4
I
D
= I
DSS
25_C
S
)
g
o
s

O
u
t
p
u
t

C
o
n
d
u
c
t
a
n
c
e

(
m
n
V
e
n
/
H
z
)
(

N
o
i
s
e

V
o
l
t
a
g
e


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