Fabrication of Mosfet
Fabrication of Mosfet
MOHIT GEAT
10706059
3EC3
MOS TECHNOLOGY
MOS technology is the basis for most LSI and all
VLSI and ULSI digital memory and microprocessor
circuits.
The most important advantage of MOS circuits over
bipolar circuits for LSI is that more transistors and
more circuit functions may be successfully
fabricated on a single chip with MOS technology.
There are 3 reasons for this :
Diffusion of
reactants
Boundary layer
Deposited film
Silicon substrate
Using a set of two masks,
the n+ and p+ Source
and Drain regions are
implanted into the
substrate and into the n-
well, respectively
The ohmic contacts to the
substrate and to the n-
well are implanted in this
process step
An insulating silicon
dioxide layer is deposited
over the entire wafer
using CVD (5000A). This is
for passivation, the
protection of all the active
components from
contamination.
The contacts are defined
and etched away to
expose the silicon or
polysilicon contact
windows. These contact
windows are necessary to
complete the circuit
interconnections using
the metal layer, which is
patterned in the next
step.
Metal (aluminum, >5000A)
is deposited over the
entire chip surface using
metal evaporation, and
the metal lines are
patterned through
etching.
Since the wafer surface
is non-planar, the quality
and the integrity of the
metal lines created in
this step are very critical
and are ultimately
essential for circuit
reliability.
Since the metal connects
two separate devices, it
is called Local
Interconnect.
INTERCONNECTION MATERIALS