Introduction To The Course: EE669: VLSI Technology
Introduction To The Course: EE669: VLSI Technology
E. J. Lilienfeld US patent 1900018 28 Mar 1928 Did Lilienfeld ever make it?
C. T. Sah, Evolution of the transistor from concept to VLSI, Proc. IEEE, 76 (10), pp. 1280, 1988 2013 Monsoon EE669: Introduction; Anil Kottantharayil
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Gold foil
Polypropylene (3 cm)
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Grown junction Bipolar Junction Transistors made by Morgan Sparks at AT & T Bell labs in 1950.
Bo Jolek, History of semiconductor engineering, Springer, 2007. 2013 Monsoon EE669: Introduction; Anil Kottantharayil
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Applications of Transistors Several that you already know And some that you probably did not know
In the early fifties it was quite fashionable for ladies in the Murray Hill neighborhood to use transistors as Bo Jolek, History of semiconductor engineering, Springer, 2007. colorful jewelry.
No two transistors worked the same way, if at all they worked low yield
The cut in the gold foil or spacing between whiskers are difficult to control point contact transistors Exposed semiconductor surfaces resulted in uncontrolled characteristics Processing not done in clean rooms large defect density
Pricy: In 1958, Fairchild sold 100 transistors to IBM for $ 150 a piece (inflation adjusted 2011 equivalent ~ $ 1050 per piece!)
2013 Monsoon EE669: Introduction; Anil Kottantharayil
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N-type Si Oxidation
754m
Contact mask and oxide etch Metal deposition, mask and metal etch
Semiconductor surface is not directly exposed to ambient in a device obtained using the planar process lower leakage, higher breakdown voltage and better stability Large scale manufacturing of bipolar junction transistors with high yield possible using the planar process Precursor to integrated circuits
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Bo Jolek, History of semiconductor engineering, Springer, 2007. 2013 Monsoon EE669: Introduction; Anil Kottantharayil
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VLSI era
1940
Electronic computer
1950
1960
IC based computer
1970
1980
1990
2000
Moores law
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metal6 via5 metal5 via4 metal4 via3 metal3 via2 metal2 via1 metal1 contact silicide
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30 nm
60 nm
Thomson et al., Intel technology journal, vol. 6, no. 2, 2002
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n+ poly
isolation
n+ p z
xj
n+
body
doping = NA
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package
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p-Si
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p-Si
p-Si As+
p-Si
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S/D implant 2
As+
Ti/Co/Ni silicide
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Moores Law
The complexity for the minimum component costs has increased at a rate of roughly a factor of two per year. the rate to remain constant for atleast 10 years.
Gorden E. Moore, Director, R&D Labs, Fairchild Corp. Electronics, 1965
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VLSI era
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~ Rs 0.00005
Expanding Moores law, ftp://download.intel.com/labs/eml/download/EML_opportunity.pdf 2013 Monsoon EE669: Introduction; Anil Kottantharayil
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CNN
1946 - Electronic Numerical Integrator & Calculator ENIAC 2.4 m X 1 m X 30 m 30,000 kg 18,000 vacuum tubes 5,000 additions/sec
$ 500,000
Pennsylvania University Archives.
201X - A low-end IT device 0.02 m X 0.1 m X 0.15 m ~ 300 g > 1000,000,000 transistors ~ 1000,000,000 Hz Networked, better interface $ 100
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Semiconductor Industry
Circuit design
Manufacturing
Test equipment
(material, electrical, )
System design
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www.itrs.net
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USD Billion
www.semi.org www.wsts.org
World GDP in 2010: USD 60000 Billion (source: CIA - USA) Semiconductor chip + equipment + materials: ~ 0.6 % of world GDP
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Plasma&Implanter&
Double&Sided&Aligner&
E&B&Evaporation&
Furnaces&
20&nm&EB&Lithography&
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Dielectric&Sputter&System&
EE669: Introduction; Anil Kottantharayil
PLD&
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Gate&Stack&Centura&
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Etch&Centura&
EE669: Introduction; Anil Kottantharayil
Endura&(PVD&&&PECVD)&
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Indian&Nanoelectronics&Users&Program&(INUP)&
Education
Research
Si Solar Cells
5 year funding of Rs. 47.5 crore from MNRE Part of Jawaharlal Nehru National Solar Mission (JNNSM) launched in January 2010: 20 GW from solar by 2022 Strong Education + Research thrust Participation from several departments
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c-Si Photovoltaics
Surface passivation of silicon Silicon nanowire solar cells
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250
! V g s = 1V
200
-V g s = 2V -V g s = 3V -V g s = 4V -V g s = 5V
I D (A )
150 100 50 0
-V g s = 6V -V g s = 7V -V g s = 8V
L in earreg io n
V D S (V )
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5.0
W F #(e V )
4.4
No
#G r # 1 '3
Gr
# la y
e rs # 3 '5
Gr
s e rs yer # la y r # la )# G 5 > k #( h ic
Misra et al., IMW, 2012 Misra et al., Applied Physics Letters, 2012 Misra et al., ICEE, 2012 Misra et al., Electron Device Letters, 2013
!
!
Sandeep SS et al., IEEE Electron Device Letters, 2013 Sandeep SS et al., EUPVSC 2013
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M. Bhaisare et al., IEEE J. Photovoltaics, 2013 M. Bhaisare et al., IEEE PVSC 2013
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Bibliography
Bo Jolek, History of semiconductor engineering, Springer, 2007 W. Shockley, The path to the conception of the junction transistor, IEEE Transactions on Electron Devices, vol. 31, No. 11, 1984, pp. 1523 I. Ross, The invention of the transistor, Proceedings of the IEEE, vol. 86, No. 1, 1998, pp. 7. Jean Hoerni, Fairchild Corporation, 1959, US patent 3064167. Gorden Moore, "Cramming more components onto integrated circuits", Electronics, Volume 38, Number 8, April 19, 1965. Dennard et al., Design of ion-implanted MOSFET's with very small physical dimensions, IEEE Journal of Solid State Circuits, Vol. 9, No. 5, October 1974. The impact of Dennards scaling theory, IEEE Solid-State Circuits Society News, special issue, http://www.ieee.org/portal/cms_docs_societies/sscs/PrintEditions/200701.pdf J. Gertner, The idea factory, Bell labs and the great age of American innovation, The Penguin Press, 2012
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Reference books
J. D. Plummer, M. D. Deal, P. G. Griffin, Silicon VLSI Technology, Pearson Education, 2001 S. K. Ghandhi, VLSI Fabrication Principles Silicon and Gallium Arsenide, John Wiley and Sons, 1983. S. A. Campbell, The Science and Engineering of Microelectronic Fabrication, Oxford University Press, 2001
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