Si4814BDY: Vishay Siliconix
Si4814BDY: Vishay Siliconix
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) Channel-1 30 Channel-2 RDS(on) () 0.018 at VGS = 10 V 0.023 at VGS = 4.5 V 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V ID (A)a Qg (Typ.) 10 8.5 10.5 9.3 6.6 8.9
FEATURES
Halogen-free According to IEC 61249-2-21 Available LITTLE FOOT Plus Integrated Schottky 100 % Rg Tested
APPLICATIONS
ADC/DC Converters - Notebook
D1
SO-8
D1 D1 G2 S2 1 2 3 4 Top View Ordering Information: Si4814BDY-T1-E3 (Lead (Pb)-free) Si4814BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 G1 S1/D2 S1/D2 S1/D2
G1 N-Channel 1 MOSFET
S1/D2
Channel-1 30 20 10
Channel-2
Unit V
10.5 8.3 7.8a, b, c 6.3a, b, c 40 3.2 1.8a, b, c 40 15 11.2 3.5 2.2 2.0a, b, c 1.3a, b, c C W mJ A
ID
8 7.5
a, b, c
6a ,b, c 40 3 1.7a, b, c 40
1.2a, b, c
- 55 to 150
Si4814BDY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Channel-1 Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) t 10 s Steady State Symbol RthJA RthJF Typ. 54 32 Max. 65 38 47 30 Channel-2 Typ. Max. 60 35 Unit C/W
Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 112 C/W for Channel 1 and 107 C/W for Channel 2.
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Si4814BDY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time td(on) tr td(off) tf trr Qrr ta tb Ch-1 Channel-1 VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, Rg = 6 Channel-2 VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, Rg = 6 IF = 1.3 A, dI/dt = 100 A/s IF = 2.2 A, dI/dt = 100 A/s IF = 1.3 A, dI/dt = 100 A/s IF = 2.2 A, dI/dt = 100 A/s IF = 1.3 A, dI/dt = 100 A/s IF = 2.2 A, dI/dt = 100 A/s IF = 1.3 A, dI/dt = 100 A/s IF = 2.2 A, dI/dt = 100 A/s Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 8 9 11 13 21 27 6 9 28 24 17 12 12 11 16 13 ns 15 15 18 20 32 40 10 15 40 35 nC ns Symbol Test Conditions Min. Typ.a Max. Unit
Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Si4814BDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
40 VGS = 10 thru 5 V 35 4V I D Drain Current (A) 30 25 20 15 10 5 3V 0 0.00 0.30 0.60 0.90 1.20 1.50 I D Drain Current (A) 30 25 20 15 10 5 0 0 1 2 3 4 5 VDS Drain-to-Source Voltage (V) TC = 125 C 25 C - 55 C 35 40
Output Characteristics
0.025
Transfer Characteristics
1050 900 VGS = 4.5 V C Capacitance (pF) 750 600 450 300 Ciss
R DS(on) On-Resistance ()
0.022
0.019
0.016
VGS = 10 V
Coss Crss
12
18
24
30
Capacitance
1.2
1.0
0.8
0.6 - 50
- 25
25
50
75
100
125
150
Gate Charge
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Si4814BDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
40 TJ = 150 C I S Source Current (A) 10 RDS(on) On-Resistance () 0.05
0.04
TJ = 25 C
0.01
0.1 0.0
- 0.2
60
- 0.4
40
- 0.6
20
- 0.8 - 50
0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (s) 1 10 TJ Temperature (C)
Threshold Voltage
100 Limited by RDS(on)*
IDM Limited
10 I D Drain Current (A) 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 TC = 25 C Single Pulse BVDSS Limited 0.01 0.1 1 10 1s 10 s DC
100
VDS Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified
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Si4814BDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.02
t2 1. Duty Cycle, D =
t1 t2
Single Pulse 0.01 10 - 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10
100
600
0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10
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Si4814BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS
40 35 30 I D Drain Current (A) I D Drain Current (A) 25 20 15 10 5 0 0.0 3V VGS = 10 thru 4 V
0.3
0.6
0.9
1.2
1.5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Output Characteristics
0.025 1400
Transfer Characteristics
Ciss RDS(on) On-Resistance () 0.022 VGS = 4.5 V 0.019 VGS = 10 V 0.016 C Capacitance (pF) 1120
840
0.013
280
0.010 0 5 10 15 20 25 30 35 40
0 0 5 10 15 20 25 30
Capacitance
(Normalized)
1.2
1.0
0.8
0 0.0
2.2
4.4
6.6
8.8
11.0
0.6 - 50
- 25
25
50
75
100
125
150
Gate Charge
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Si4814BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
40 TJ = 150 C 0.05
10
R DS(on) On-Resistance ()
0.04
TJ = 25 C 1
0.01
0.1 0.0
80
Power (W) 24 V
60
30 V
40
10- 4
20
IDM Limited
10 I D Drain Current (A) 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 TC = 25 C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified 1s 10 s dc
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Si4814BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
10- 3
10- 2
10- 1
10
100
600
Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73278.
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Package Information
Vishay Siliconix
E 1 2 3 4
h x 45 C
A1
MILLIMETERS DIM A A1 B C D E e H h L q S 5.80 0.25 0.50 0 0.44 Min 1.35 0.10 0.35 0.19 4.80 3.80 1.27 BSC 6.20 0.50 0.93 8 0.64 0.228 0.010 0.020 0 0.018 Max 1.75 0.20 0.51 0.25 5.00 4.00 Min 0.053 0.004 0.014 0.0075 0.189 0.150
INCHES Max 0.069 0.008 0.020 0.010 0.196 0.157 0.050 BSC 0.244 0.020 0.037 8 0.026
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VISHAY SILICONIX
0.288 7.3
0.050 1.27
0.088 2.25
0.088 2.25
0.2 5.07
The minimum recommended pad patterns for the single-MOSFET SO-8 with copper spreading (Figure 1) and dual-MOSFET SO-8 with copper spreading (Figure 2) show the starting point for utilizing the board area available for the heat-spreading copper. To create this pattern, a plane of copper overlies the drain pins. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. These patterns use all the available area underneath the body for this purpose. Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, thermal connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device.
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APPLICATION NOTE
0.050 1.27 0.196 5.0 0.027 0.69 0.078 1.98 0.2 5.07
(6.248)
0.022 (0.559)
Return to Index
Return to Index
APPLICATION NOTE
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(1.194)
0.047
(3.861)
0.246
0.152
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customers responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customers technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 02-Oct-12