A 130.7Mm 2-Layer 32Gb Reram Memory Device in 24Nm Technology
A 130.7Mm 2-Layer 32Gb Reram Memory Device in 24Nm Technology
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ABSTRACT
ReRAM has been considered as one of the potential technologies for the next-generation nonvolatile memory, given its fast access speed, high reliability, and multi-level capability. Multiple-layered architectures have been used for several megabit test-chips and memory macros [13]. This paper presents a MeOx-based 32Gb ReRAM test chip developed in 24nm technology.
Additional Details
Conference Location : San Francisco, CA, USA ISSN : 0193-6530 Print ISBN: 978-1-4673-4515-6 Digital Object Identifier : 10.1109/ISSCC.2013.6487703
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