CVD
CVD
CVD DIAMOND
HANDBOOK
Contact Element Six Technologies at [email protected]
CONTENTS
IN T R O D U C IN G D I A M O ND 3
P H Y S I C A L P R O P E R T IE S
4
D I A M O ND C L A S S IF I C AT I O N
5
D I A M O ND S Y N T HE S I S 6
T Y P E S O F C V D D I A M O ND 7
C R Y S TA L L O G R A P H Y 8
ME C H A NI C A L S T R E N G T H
9
P O L I S HIN G O F D I A M O ND 10
D I A M O ND S UR FA C E S 1 1
PROPERTIES
O P T I C A L P R O P E R T IE S
O P T I C A L C O N S TA N T S
R A M A N S C AT T E R IN G
S IN G L E C R Y S TA L O P T I C S
P O LY C R Y S TA L L INE O P T I C S
E MI S S I V I T Y A ND R F W IND O W S
P R E C I S I O N C O MP O NE N T S
T HE R M A L P R O P E R T IE S
E L E C T R O NI C P R O P E R T IE S
E L E C T R O C HE MI C A L P R O P E R T IE S
12
13
14
15
16
17
18
19
20
21
D ATA S H E E T S
E L E C T R O NI C G R A D E S
O P T I C A L A ND R F G R A D E S
ME C H A NI C A L G R A D E S
T HE R M A L G R A D E S
E L E C T R O C HE MI C A L G R A D E
22
23
24
25
26
F U R T H E R R E A D I N G
27
INTRODUCING DIAMOND
Diamond is characterised by its
exceptional hardness, robustness and its
optical and thermal properties;
pre-eminent as a gemstone and an
industrial tool.
Natural diamond has an inherent
variability and scarcity that limits its use in
engineering applications. Developments
in synthesis processes have enabled the
production of consistently engineered
synthetic diamond; firstly in the 1950s
using high pressure and high temperature
and later using chemical vapour
deposition in the 1980s to produce the
exceptional covalent crystal diamond.
boron
carbon
nitrogen
10.811
12.011
14.007
aluminium
silicon
phosphorus
13
14
AL Si
26.981
15
28.085
30.973
PHYSICAL PROPERTIES
P R OP E R T Y
VA L U E
NUMBER DENSITY
3 . 5 1 5 2 4 x 1 0 3 k g m -3
1 . 7 7 x 1 0 23 p e r c m 3
L AT T I C E T Y P E
C u b i c F d 3 m - O h7
L AT T I C E S PA C I N G
DENSITY
F R A C T U R E T O U G H N E S S K 1C
5 M P a m 0.5 S i n g l e C r y s t a l
8 . 5 M P a m 0.5 P o l y c r y s t a l l i n e
P O I S S O N S R AT I O
0.1
YOUNGS MODULUS
1050 GPa
FRACTURE STRENGTH
FAT I G U E L I F E
FRACTURE PLANE
WEIBULL MODULUS
HARDNESS
FRICTION COEFFICIENT ()
10
20
Growth Surface
Nucleation surface
Polycrystalline
Polycrystalline
DIAMOND CL ASSIFICATION
N > 5PPM
N < 5PPM
> 98% OF
NATURAL
DIAMOND
MOST CVD
DIAMOND
(UNLESS DOPED)
VERY RARE IN
NATURE
T Y PE Ia
T Y PE Ib
T Y PE IIa
T Y PE IIb
Contains aggregated
nitrogen
Contains
single
substitional
nitrogen
Nitrogen as
the major
impurity
Electrically
insulating
Boron as
the major
impurity p-type
semiconductor
Boron doped
CVD
T Y PE Ia A
T Y PE IaB
Contains
nitrogen
in the A
aggregate
form
Contains
nitrogen
in the B
aggregate
form
DIAMOND SYNTHESIS
HPH T
The vast majority of synthetic diamond
The plasma can be heated by microwaves,
is made by high pressure and high
radio frequency, lasers, direct current,
temperature diamond (HPHT) methods.
hot filament and chemical reactions. The
HPHT aims to mimic the thermodynamic
nucleation and growth of continuous
conditions in nature that diamond forms
diamond requires a substrate with
in, but with the addition of a molten metal refractory characteristics, stable carbide
solvent / catalyst to reduce the large
formation and a low thermal expansion
kinetic barrier and act as transport media
coefficient.
for dissolved carbon. Material grown
this way typically has a yellow hue, as a
consequence of nitrogen incorporation
Waveguide
into the diamond lattice from the
Microwaves
atmosphere and growth materials.
Antenna
Chamber
Plasma
Gas inlet
Substrate
Pressure
control
Vacuum
Window
Single crystal
diamond growth
Substrate removal
Poly diamond
growth
Non-diamond substrate
Substrate removal
S IN GL E C RY S TA L C V D D I A M OND GR A DE S
SINGLE
C R Y S TA L
OPTICAL
GRADE
DETECTOR
GRADE
P O LY C RY S TA L L INE C V D D I A M OND
OPTICAL
GRADE
THERMAL
GRADES
CRYSTALLOGRAPHY
DIAMOND S T RUC T URE
{100}
4pt (point)
{110}
2pt (point)
{111}
3pt (point)
FA C E
P L A NE
4PT
( 100)
2PT
( 110)
3PT
(111)
4PT (100)
00
900
450
900
540 44
2PT (110)
450
900
00
600
900
350 16
900
3PT (111)
540 44
350 16
900
00
720 32
MECHANICAL STRENGTH
With grain size increasing with layer
thickness, strength is also dependent on
thickness. Grain size is also dependent on
the growth conditions and the orientation
of the layer; with the nucleation surface
in tension, the fracture stress is higher
and the differences between grades less
pronounced. In use, consideration should
be given to which side is under tension.
S T RENG T H OF DIAMOND
The covalent carbon to carbon bonds
make diamond a very high strength
material. The extreme rigidity of the
diamond lattice also makes it a very stiff
material, thus diamond is the ultimate
high strength ceramic. The stress to
fracture diamond is related to the size of
the critical flaws in the material.
800
750
700
650
600
550
500
450
400
350
300
250
200
Mechanical Grades
Optical and Thermal Grades
0.4
0.8
1.0
1.2
0.6
THICKNESS (mm)
POLISHING OF DIAMOND
E T CHING OF DIAMOND
L APPING
Rough processing of diamond is achieved
using lapidary processes with a diamond
grit slurry to remove material quickly.
The physical wear mechanism is brittle
fracture, leaving a rough surface with
significant sub-surface damage.
SCAIFE POLISHING
3.0
124
100
2.0
50
1.5
1.0
-50
0.5
0.0
0.0
0.5
1.0
1.5
mm
2.0
2.5
3.0
10
-100
-117
mm
2.5
DIAMOND SURFACES
SURFACE T ERMINAT ION
BR A ZING
CVD diamond can be attached using
active brazes, formulated to form a stable
carbide interface, in high temperature
vacuum processes, at ~ 800C. Interface
shear strengths > 200 MPa can be
achieved. The stresses generated by the
thermal expansion mismatch between
diamond and most mount materials
requires careful consideration.
11
OPTICS
OPTICAL PROPERTIES
T R ANSMIS SION SPEC T RUM
cut off at 225 nm (5.47 eV). It is then
transparent in the ultra violet, visible near
infrared regions, far infrared and radio
frequencies, with only weak phonon band
absorption, in the ~ 2.5 to 7 m region
peaking at 14 cm-1 at 4.63 m.
DIAMOND
30
A B S O R P T I O N C O E F F I C I E N T ( c m -1)
SAPPHIRE
ZINC SELENIDE
CALCIUM FLUORIDE
20
10
visible
region
0
0.2
0.5
10
WAV E L E NG T H ( m)
20
RADIO
FREQUENCIES
Absorption coefficient for ultra high purity CVD diamond from the UV cut-off 225 nm to far infrared region.
Diamond has a relatively low dielectric constant making it highly suitable as a window for radio frequency
applications.
12
REFR AC T I V E INDE X
REFRACTIVE INDEX ()
0.5
0.3306
4.3356
n( ) = 1+ 2
+ 2
2
2
(175) (106)
2
Wavelength
226nm
400nm
500nm
600nm
700nm
1064nm
7. 0 m
10.6 m
14.0 m
2 .7 5
OPTICS
OPTICAL CONSTANTS
2 .7 0
2.65
2.60
2.55
2.50
2.45
2.40
2.35
0.2
2.715
2.464
2.432
2.415
2.406
2.392
2.376
2.376
2.375
10
100
WAV E L E NG T H ( m)
1.18897
1.0083104
0.028 0.028
1000
1000
REFRACTIVE INDEX ()
n( ) = 2.37837 +
2.396
2.395
2.394
2.393
2.392
2.391
2.290
2.389
2.388
2.387
2.386
-5
0 -0 50 00 50 00 50 00 50 00 50 00
1 1 2 2 3 3 4 4 5
T E M P E R A T U R E C
13
OPTICS
R AMAN L ASER
T=
SOURCE
Dhc 0
k ln 1+ C / 0 (T )
kgL
d / dT
G AT E
DRAIN
Di
o
am
nd
SC CVD DIAMOND
RAMAN GAIN
RAMAN SHIFT cm
K G W K G D ( W O 4) 2
YVO4
B A ( N O 3) 2
15
11
1332
901
892
1047
C R Y S TA L L E N G T H L m m
25
25
25
T H E R M A L C O N D U C T I V I T Y W m -1K -1
>2 0 0 0
5.2
1.2
1440
20
-1
14
OPTICS
2.0
A B O R P T I O N C O E F F I C I E N T ( c m -1)
S CAT T ER
Scatter from CVD single crystal diamond
is very low, as the macroscopic defects and
surface finish that gives rise to scatter are
highly controlled. Total forward scatter
can be as low as 0.02 % at 1064 nm.
1.5
1.0
0.5
0.0
500
1000
1500
WAV E L E NG T H (nm)
OP T ICAL GR ADE
When nitrogen is less than 20 ppb,
single crystal diamond has the lowest
possible absorption. Suitable for the most
demanding optical applications, this is a
new class of synthetic optical material.
Further Reading
18. Low Birefringence
15
SCAT T ER
Scatter losses are insignificant below 2
m; polycrystalline diamond has excellent
infrared optical properties. High incident
angle scatter is correlated with microfeatures in the diamond, while low angle
scatter is attributed to strain induced
birefringence. The residual extinction
coefficient of diamond is 0.04 to 0.07 cm-1
at 10.6 m.
16
OPTICS
POLYCRYSTALLINE OPTICS
T R A N S MI T TA NCE %
The residual absorption in the far infrared is due to the tail of the multi-phonon
vibrational absorption processes. These
are temperature dependent and diamond
is emissive. However these processes are
only significant above ~ 100C and the
absorption is successfully described by a
phonon recombination and destruction
model.
100
90
80
70
60
50
40
30
20
10
0
5000
OPTICS
2 5 c
2 5 0 c
5 0 0 c
4000
3000
2000
1000
T E M P E R AT U R E C
25
0.035
100
0.063
150
0.082
200
0.102
250
0.123
300
0.145
350
0.168
400
0.191
450
0.216
500
0.241
10 . 6 m A b s . c m -1
17
OPTICS
PRECISON COMPONENTS
pCVD DIAMOND (OPTICAL
THERMAL ELECTRONIC)
pCVD DIAMOND
(MECHANICAL
ELECTROCHEMICAL)
scCVD
SIZE THICKNESS
8 8 mm < 2 mm
DIMENSIONAL TOLERANCE
-0, + 0.2 mm
-0, + 0.2 mm
-0,+ 0.2 mm
THICKNESS
25 m
25 m
25 m
3 2
3 2
3 2
S U R FA C E R O U G H N E S S
LAPPED (Ra)
<2 0 0 nm
<2 0 0 nm
<2 0 0 nm
S U R FA C E R O U G H N E S S
POLISHED (Ra)
<2 0 nm
<2 0 nm
<5 nm
F L AT N E S S ( 6 3 3 n m )
1 fringe in 10 mm
DIAMOND
1 fringe in 3 mm
O R I E N TAT I O N M I S C U T
FA C E T A N G L E ( P R I S M S )
0.25
Specifications listed are typically production process limits. Tighter tolerances available on request.
)
2x
.05 (
+0 0
7 0.9
0.02 C
0.02 A
0.06 0.03x45(2x)
[100]
45
0.25
(0.59)
0.05 B
+
2 - 0.02
0
0.5 4)
(x
90 YP
T
0.04 0.03x45(8x)
90
TY 0.
P 5
[110]
+
1.03 - 00.05
[110]
ELECTRONICS
THERMAL PROPERTIES
T HERMAL CONDUC T ION
T HERMAL E X PANSION
T H E R M A L C O N D U C T I V I T Y ( W m -1K -1)
6000
5500
TEMP K
LINEAR
M E A N E X PA N S I O N
COEFFICIENT REFERENCED
FROM 300K
()
200
0.45
300
1.05
400
1.79
1.09
500
2.7
1.47
3500
600
3.17
1.84
3000
800
3.81
2.39
Polycrystalline Grades
Optical Grade
TM180
TM150
TM100
5000
4500
4000
2500
1000
4.38
2.82
2000
1200
4.93
3.18
1500
1400
5.43
3.52
1000
1600
5.87
3.82
500
150
200
250
300
350
400
T EMPER AT URE ( K )
The thermal conductivity of diamond versus
temperature. In single crystal and high phase
purity polycrystalline diamond, phonon scattering
dominates. While finer grained materials exhibit a
lower but less temperature dependent characteristics.
Room temperature thermal conductivity of
polycrystalline optical grade CVD diamond exceeds
2000 Wm -1K-1
Further Reading
21. Thermal conductivity
22. Thermal expansion
19
ELECTRONICS
ELECTRONIC PROPERTIES
SEMICONDUC T ING PROPERT IES
P O LY C R Y S TA L L I N E S I N G L E C R Y S TA L
5.47
5.47
[ N ] S0 ( p p b ) E P R
< 50
<5
B (ppb) SIMS
<0.5
<0.5
D O PA N T S
Activation
energy
Achievable
Levels
BORON
0.37 eV
1 0 21
PHOSPHORUS
0.6 eV
1 0 20
NITROGEN
1.7 eV
1 0 19
(111)
DOPING DIAMOND
All known dopants for diamond are deep,
however with B > 1 1020 atoms cm-3, the
acceptor levels overlap with the valence
band as the diamond undergoes the
Mott transition to demonstrate metal-like
p-type conductivity.
20
WAT E R
ELECTROCHEMICAL PROPERTIES
BORON DOPED DIAMOND
CURRENT DENSITY
I2
I2
I2
m A c m - 2 Glassy Carbon
I10
-2
m A c m - 2 Platinum
-1
9 . 2 1 0 16
2 1 0 18
5 1 0 19
1 . 9 1 0 20
3 1 0 20
1
0.5
CURREN T/ A
0.0
-0.5
-1.0
-1.5
-2 . 0
-0.8
-0.6
21
-0.4
-0.2
0.0
-0.2
PROPERTIES
S I N G L E C R Y S TA L
P O LY C R Y S TA L L I N E
COMMENTS
ELECTRONIC
H o l e m o b i l i t y ( c m 2V -1s -1)
>2 0 0 0
1000
E l e c t r o n m o b i l i t y ( c m 2V -1s -1)
>2 0 0 0
1800
~2 0 0 0
~ 1 - 10
* Ty p i c a l l y > 4 7 5 m
Ty p i c a l l y >1 8 0 m
*A t 0 . 5 V m - 1 a p p l i e d f i e l d , f o r
500 m plate
A t 1 V u m -1 a p p l i e d f i e l d , f o r 5 0 0
m plate
Ty p i c a l l y > 9 5 %
Ty p i c a l l y >3 6 %
Bandgap (eV )
5.47
5.47
>1 0 1 5
W i t h <2 5 % s i g n a l d r o p
1-2
[ N ] 0s ( p p b )
Measured by EPR
[B] (ppb)
<1
<1
Measured by SIMS
T h e r m a l c o n d u c t i v i t y ( W m -1K -1)
>2 0 0 0
> 1900
E x p a n s i o n C o e f f i c i e n t ( p p m K -1)
at 300 K
1.0 0.1
1.0 0.1
E x p a n s i o n C o e f f i c i e n t ( p p m K -1)
at 1000 K
4.4 0.1
4.4 0.1
To l e r a n c e 0 . 0 5 m m
Polycr ystalline available up to
110mm
To l e r a n c e 0 . 0 5 m m
Laser kerf
< 0.2
< 0.2
Cr ystallographic Orientation
(face / edge)
{ 1 0 0 } 3 <1 1 0 >
B r e a k d o w n V o l t a g e ( M V c m -1)
IMPURITIES
THERMAL PROPERTIES
DIMENSIONS
PROCESSED
Sur face finish side 1 Ra (nm)
<0.5
R a <2 0
<0.5
R a <2 0
ELECTRONICS
ELECTRONIC GRADES
P O LY C R Y S TA L L I N E
OPTICS
PROPERTY
OPTICAL GRADE
RF GRADE
S I N G L E C R Y S TA L
OPTICAL GRADE
Hardness (GPa)
81 18
81 18
70 120
70 120
8.5
Yo u n g s m o d u l u s ( G P a )
1054
P o i s s o n s r a t i o
0.1
0.5
(30)
8.5
(3)
(3)
1054
(3)
0.1
(3)
(30)
(3)
57
(3)
57
(3)
1054
(3)
1054
(3)
0.1
(3)
(3)
0.1
(3)
3500 [2.5]
Nucleation surface
800 [ 10]
800 [ 10]
Grow th surface
400 [ 15]
300 [ 15]
Rain imp ac t D T V (m s -1 ) 2 mm dr op s i z e
525
S a n d e r o s i o n ( m g / k g ) a t 1 0 0 m s -1
C300/600 sand
2 .1 0.6
(31)
(30)
(3)
(3)
3500 [2.5]
(3)
4 5 7 5 3 3 (31)
(3)
T her m al c onduc t i v i t y a t 3 0 0 K ( Wm -1 K -1 ) 1 9 0 0 2 2 0 0
1900 2200
1900 2200
>2 0 0 0
T her m al c onduc t i v i t y a t 5 0 0 K ( Wm -1 K -1 ) 1 1 0 0
1100
1100
1100
1.0 at 300 K
1.0 at 300 K
1 . 0 a t 3 0 0 K (22)
1.0 at 300 K
4.4 at 1000 K
4.4 at 1000 K
4 . 4 a t 1 0 0 0 K (22)
4.4 at 1000 K
2.376
2.376
Refractive index
( 10.6 m)
2.376
(30)
( 1550 nm)
2.386
2.386
2.386
( 1064 nm)
2.392
2.392
2.392
d n / d T ( K -1 )
9 . 6 x 1 0 -6 (30)
5.68 0.15
L o s s t a n g e n t 1 4 5 G H z ( 1 0 -6)
8 20
10 . 6 m a b s o r p t i o n c o e f f i c i e n t ( c m - 1 )
<0.07
9.6 x 10
10 100
(32)
(32)
m in 0 . 8 a t 3 .7 m
Ty p i c a l 0 . 1 2
(30)
<0.1
( 19)
B i r e f r i n g e n c e ( e - o)
Specific heat capacit y (Jkg K ) 300K 520
520
(21)
Tr a n s m i s s i o n 8 2 0 0 m ( 1 m m t h i c k ) 7 1 . 4 % #
>64%
(21)
68 -70%
(12)
0.10%
1 x 1 0 -4 (18)
t o 1 x 1 0 -6 (18)
520
520
(21)
(21)
7 1.4% #
7 1.4% #
>69%#
70.6%#
0 . 0 3 a t 7 7 3 K ( 19)
NA
<0.7 %
( 19)
min 0 . 8 a t 3 .7 m
0.02 at 573 K
( 19)
( 19)
(30)
< 0 . 0 0 5 (12)
(12)
0.03 at 773 K
<4%
see page 27
<0.05
(12)
0.02 at 573 K
0.1 0.7 %
(xx)
0.02 at 573 K
In t e gr a t e d f or w ar d s c a t t er v is ibl e ( % )
Tr a n s m i s s i o n 6 3 3 n m ( 1 m m t h i c k )
(12)
(30)
9 . 6 x 1 0 - 6 (30)
- 6 (30)
0.3 at 773 K
Integrated for ward scat ter 8 12 m ( %)
-1 -1
(30)
<0.05
3 5 m ab s or p t ion c o e f f icien t (c m - 1 )
Emissivit y at 10 m ( 1 mm thick)
5.68 0.15
(30)
For references
(30)
(30)
PRECISION
MACHINING
MECHANICAL GRADES
PROPERTY
DIAFILM CDD
DIAFILM CDM
DIAFILM CDE
M C C - S I N G L E C R Y S TA L
THERMAL CONDUCTIVITY
@ 3 0 0 K ( W m -1K -1)
>1100
>1000
>600
>1900
@ 425 K (Wm K )
>950
>900
>500
>1500
1.0 0.1
1.0 0.1
1.0 0.1
1.0 0.1
@ 1 0 0 0 K ( p p m K -1) 4 . 4 0 . 1
4.4 0.1
4.4 0.1
4.4 0.1
>8.3
>10.0
>11.1
520
520
520
520
300 K (GPa)
80 18
80 18
80 18
70 -120
FRACTURE
STRESS
Growth Nucleation
500 - 1100
Growth Nucleation
500 - 1100
Growth Nucleation
500 - 1100
Surface finish
2000 - 3000
8.5
8.5
8.5
(GPa)
1050
1050
1050
1050
Poissons ratio
0.1
0.1
0.1
0.1
3.52
3.52
3.52
3.52
1 1 0 12
1 1 0 12
0.05 - 0.07
1 1 0 12
-1
-1
T H E R M A L E X PA N S I O N C O E F F I C I E N T
@ 3 0 0 K ( p p m K -1)
THERMAL DIFFUSIVITY
3 0 0 K ( c m 2s -1)
>5.5
S P E C I F I C H E AT C A PA C I T Y
3 0 0 K ( J k g -1K -1)
HARDNESS
(MPa)
FRACTURE TOUGHNESS
( M P a m 0.5)
YOUNGS MODULUS
DENSITY
( 1 0 3 k g m -3)
RESISTIVITY
Bulk Rv ( cm)
Orientation dependent
ELECTRONICS
THERMAL GRADES
PROPERTY
THERMAL CONDUCTIVITY
@ 3 0 0 K ( W m -1K -1)
>1000
>1500
>1800
>2 0 0 0
@ 4 2 5 K ( W m -1K -1)
>900
>1400
>1500
>1500
T H E R M A L E X PA N S I O N C O E F F I C I E N T
@ 3 0 0 K ( p p m K -1)
1.0 0.1
1.0 0.1
1.0 0.1
1.0 0.1
@ 1 0 0 0 K ( p p m K -1)
4.4 0.1
4.4 0.1
4.4 0.1
4.4 0.1
>5.5
>8.3
>10.0
>11.1
520
520
520
520
81 18
81 18
81 18
81 18
5 . 3 7. 0
5 . 3 7. 0
5 . 3 7. 0
5 . 3 7. 0
( G Pa)
1050
1050
1050
1050
Poissons ratio
0.1
0.1
0.1
0.1
3.52
3.52
3.52
3.52
THERMAL DIFFUSIVITY
3 0 0 K ( c m 2s -1)
S P E C I F I C H E AT C A PA C I T Y
@ 3 0 0 K ( J k g -1K -1)
HARDNESS
G Pa
FRACTURE TOUGHNESS
( M P a m 0.5)
YOUNGS MODULUS
DENSITY
( 1 0 3 k g m -3)
RESISTIVITY
B u l k R v ( 1 0 12 c m )
S u r f a c e R s ( 1 0 10 c m )
25
PROPERTIES
EP GRADE
COMMENT
ELECTROCHEMICAL PROPERTIES
Boron doping concentration (t ypical)
2 t o 6 x 1 0 20 A t o m s c m -3
Av e r a g e d o v e r 0 . 1 6 m m 2
Tr a c e
Resistivity ( m)
0 . 2 - 1 . 8 x 1 0 -3
0 . 2 5 x 1 0 -3
Contact resistivity ( m)
<1 x 1 0 - 3
Values quoted measured with ohmic contacted diamond with polished surfaces
>3 . 0
Capacitance* (F cm )
<2 0 F
<1 0 0
<6
M e a s u r e d a t 1 0 0 0 0 A m -2
>2 0 0 0 0
2 m m s p a c i n g 5 0 m S c m -1 e l e c t r o l y t e
Solvent window* ( V )
-2
E r o s i o n R a t e ( g h - 1 m -2 )
Operating Current Densit y (A m )
-2
MECHANICAL PROPERTIES
Nucleation side fracture stress (MPa)
>800
>450
Yo u n g s m o d u l u s ( G P a )
1050
F r a c t u r e t o u g h n e s s ( M P a m 0 .5)
8.5
Weibull modulus
>1 0
Hardness (GPa)
81 18
THERMAL PROPERTIES
T h e r m a l c o n d u c t i v i t y ( W m- 1 K - 1 )
~ 700
2 5%
Ty p i c a l v a l u e s
Ra <0. 5
Ty p i c a l v a l u e s
R a <2 0 0
Ty p i c a l v a l u e s
M a x a r e a a v a i l a b l e ( r o u n d m m 2)
12 270
Diameter 130 mm
M a x a r e a a v a i l a b l e ( r e c t a n g l e m m 2)
7150
Rectangle 110 x 65 mm
0.2
Ra <0.25
Standard tolerance
Ra <0.03
Standard tolerance
0.05
Standard tolerance
PROCESSED
*Values quoted measured for ohmic contacted diamond with Ra <0.03 m surface finish
26
WAT E R
ELECTROCHEMICAL PROCESSING
GRADE
FURTHER READING
1. Monolithic Diamond Raman Lasers Reilly S et al. Optics Letters http://www.opticsinfobase.org/ol/upcoming_pdf.
cfm?id=228892
2. Special Issue on Sciences Gem: Diamond Science 2009 Mainwood A, et al http://dx.doi.org/10.1088/09538984/21/36/360301
3. The Mechanical and Strength Properties of Diamond Field JE 2012 http://dx.doi.org/10.1088/0034-4885/75/12/126505
4. The Type Classification System of Diamonds and Its Importance in Gemology: Breeding C Metal. http://www.gia.edu/gemsgemology/summer-2009-type-classification-system-diamonds-breeding
5. Diamond synthesis by chemical vapor deposition: The early years Angus 2014 http://dx.doi.org/10.1016/j.
diamond.2014.08.004
6. A review of diamond synthesis by CVD processes 2011 Schwander M http://dx.doi.org/10.1016/j.diamond.2011.08.005
7. Chemical vapour deposition synthetic diamond: materials, technology and applications 2009 R S Balmer et. http://dx.doi.
org/10.1088/0953-8984/21/36/364221 http://arxiv.org/abs/0909.1185
8. The Structure of Diamond Bragg W H Bragg W L 1913 http://www.jstor.org/stable/93489
9. Diamond polishing Schuelke T et al 2013 http://dx.doi.org/10.1016/j.diamond.2012.11.007
10. Diamond surfaces: familiar and amazing. Ristein J. 2006 Appl. Phys. A. 82, 377-384 http://dx.doi.org/10.1007/s00339005-3363-5
11. Influence of the brazing parameters on microstructure, residual stresses and shear strength of diamondmetal joints 2010
Buhl, S et al. J Mater Sci 45:43584368 http://dx.doi.org/10.1007/s10853-010-4260-7
12. Single crystal and polycrystalline CVD diamond for demanding optical applications 2011 J M Dodson et al http://dx.doi.
org/10.1117/12.885188
13. Infrared refractive index of diamond Edwards et al OSA, Vol. 71, Issue 5, pp. 607-608 (1981) http://dx.doi.org/10.1364/
JOSA.71.000607
14. Temperature dependence of the refractive index of diamond up to 925 K 2000 Ruf, T et al. http://dx.doi.org/10.1103/
PhysRevB.62.16578
15. Diamond micro-Raman thermometers for accurate gate temperature measurements 2014 Simon R B et al http://dx.doi.
org/10.1063/1.4879849
16. Raman spectroscopy of diamond and doped diamond 2004 Prawer S et al 362, 25372565 http://dx.doi.org/10.1098/
rsta.2004.1451
17. Highly efficient diamond Raman laser 2009 Mildren RP et al Optics Letters, 34, pp. 2811-2813 http://dx.doi.org/10.1364/
OL.34.002811
18. Control of surface and bulk crystalline quality in single crystal diamond grown by chemical vapour deposition. 2009 Friel I et
al. Dia. & Rel. Mat. 18 () 808815 http://dx/doi.org/10.1016/j.diamond.2009.01.013 http://arxiv.org/abs/0909.1200
19. Factors affecting the optical performance of CVD diamond infrared optics 2003 Mollart TP et al http://dx.doi.
org/10.1088/0268-1242/18/3/317
20. Temperature dependence of intrinsic infra-red absorption in natural and chemical-vapor deposited diamond 2002 C Piccirillo
G Davies at al J. Appl. Phys. 92, 756 2002 http://dx.doi.org/10.1063/1.1483380
21. Thermal conductivity measurements on CVD diamond 2001 Twitchen D J et al. http://dx.doi.org/10.1016/S09259635(00)00515-X
22. Thermal expansion of some diamondlike crystals Slack G A et al (1975), J Appl Phys, 46, pp 98 http://dx.doi.
org/10.1063/1.321373
23. High mobility diamonds and particle detectors 2006 Pernegger H http://dx.doi.org/10.1002/pssa.200671404
24. Activation energy in low compensated homoepitaxial boron-doped diamond films 1998 Lagrange J P et al, Diam. Relat.
Mat. 1998, 7. 1390-1393, DOI: http://dx.doi.org/10.1016/S0925-9635(98)00225-8
25. A practical guide to using boron doped diamond in electrochemical research 2015 Macpherson J V http://dx.doi.org/10.1039/
c4cp04022h
26. Advanced oxidation processes for water treatment: advances and trends for R&D 2008 Comninellis C et al http://dx.doi.
org/10.1002/jctb.1873
27. CVD Diamond Integrating a Superior Thermal Material 2014 Obeloer et al Electronics Cooling September 2014 http://
www.electronics-cooling.com/2014/09/cvd-diamond-integrating-superior-thermal-material/
28. Applications of Synthetic Diamond http://www.e6.com/wps/wcm/connect/E6_Content_EN/Home/Applications/
29. Thermal stability of metallized CVD diamond 1996 C.D Iacovangelo http://dx.doi.org/10.1016/S0040-6090(95)08236-0
30. Materials for Infrared Windows and Domes 1999 Harris DC SPIE, Optical Engineering Press, ISBN 0819434825.
31. The liquid Impact Resistance of CVD Diamond and other Infrared Materials 1999 Coad E.J. and J.E. Field, http://dx.doi.
org/10.1117/12.277041
32. FZK Report, FZKA 6815, 2003. M.Thumm, http://www.ubka.uni-karlsruhe.de/volltexte/fzk/6815/6815.pdf
ELEMEN T SI X
Element Six is a member of the De Beers Group of
Companies, its majority shareholder. Element Six
designs, develops and produces synthetic diamond
supermaterials, and operates worldwide with its
head office registered in Luxembourg, and primary
manufacturing facilities in U.S., Germany, Ireland,
South Africa and the U.K.
Element Six supermaterial solutions are used in
applications such as cutting, grinding, drilling, shearing
and polishing. Today Element Six is a $500 million
company serving over 5,000 customers worldwide.
Element Six Technologies, a division of Element Six, is
dedicated to the design, development and manufacture
of the extreme properties of synthetic diamond beyond
hardness - opening up new applications in a wide array
of industries such as optics, power transmission, water
treatment, semiconductors and sensors. Element Six
Technologies operates two CVD diamond production
around the globe; Santa Clara in California, and Ascot
in the U.K.
*Registered with the Department of State for handling ITAR sensitive and controlled defense projects.