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High Current MOSFET Driver: Features
High Current MOSFET Driver: Features
Features
Dual MOSFET driver for synchronous rectified
converters
High driving current for fast external MOSFET
switching
Integrated bootstrap diode
VFDFPN8 3 x 3 mm
High frequency operation
Enable pin Combined with ST PWM controllers, the driver
Adaptive dead-time management allows implementing complete voltage regulator
solutions for modern high-current CPUs and
Flexible gate-drive: 5 V to 12 V compatible DC-DC conversion in general. L6743B embeds
High-impedance (HiZ) management for output high-current drivers for both high-side and
stage shutdown low-side MOSFETs. The device accepts flexible
Preliminary OV protection power supply (5 V to 12 V) to optimize the
gate-drive voltage for high-side and low-side
VFDFPN8 3 x 3 mm package maximizing the system efficiency.
The bootstrap diode is embedded saving the use
Applications of external diodes. Anti shoot-through
High current VRM / VRD for desktop / server / management avoids high-side and low-side
workstation CPUs MOSFET to conduct simultaneously and,
combined with adaptive dead-time control,
High current and high efficiency DC / DC minimizes the LS body diode conduction time.
converters
L6743B embeds preliminary OV protection: after
Vcc overcomes the UVLO and while the device is
Description in HiZ, the LS MOSFET is turned ON to protect
L6743B is a flexible, high-frequency dual-driver the load in case the output voltage overcomes a
specifically designed to drive N-channel warning threshold protecting the output against
MOSFETs connected in synchronous-rectified HS failures.
buck topology. The driver is available is VFDFPN8 3 x 3 mm
packages.
L6743B Tube
VFDFPN8
L6743BTR Tape and reel
Contents
3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
L6743B Typical application circuit and block diagram
CDEC
VIN = 5V to 12V
VCC
BOOT
CHF CBULK
PWM Input
L6743B
PWM UGATE HS
EN Input L Vout
EN PHASE
VCC
BOOT
EN
CROSS CONDUCTION
15k UGATE
HS
ADAPTIVE ANTI
GND
L6743B PHASE
VCC
GND
3/16
Pins description and connection diagrams L6743B
4/16
L6743B Maximum ratings
3 Maximum ratings
5/16
Electrical specifications L6743B
4 Electrical specifications
Gate drivers
Protections
6/16
L6743B Device description and operation
L6743B provides high-current driving control for both high-side and low-side N-channel
MOSFETS connected as step-down DC-DC converter driven by an external PWM signal.
The integrated high-current drivers allow using different types of power MOSFETs (also
multiple MOS to reduce the equivalent RDS(on), maintaining fast switching transition.
The driver for the high-side MOSFET use BOOT pin for supply and PHASE pin for return.
The driver for the low-side MOSFET use the VCC pin for supply and PGND pin for return.
The driver embodies a anti-shoot-through and adaptive dead-time control to minimize low-
side body diode conduction time maintaining good efficiency saving the use of Schottky
diodes: when the high-side MOSFET turns off, the voltage on its source begins to fall; when
the voltage reaches about 2 V, the low-side MOSFET gate drive voltage is suddenly applied.
When the low-side MOSFET turns off, the voltage at LGATE pin is sensed. When it drops
below about 1 V, the high-side MOSFET gate drive voltage is suddenly applied. If the
current flowing in the inductor is negative, the source of high-side MOSFET will never drop.
To allow the low-side MOSFET to turn-on even in this case, a watchdog controller is
enabled: if the source of the high-side MOSFET doesn't drop, the low-side MOSFET is
switched on so allowing the negative current of the inductor to recirculate. This mechanism
allows the system to regulate even if the current is negative.
Before VCC to overcome the UVLO threshold, L6743B keeps firmly-OFF both high-side and
low-side MOSFETS then, after the UVLO has been crossed, the EN and PWM inputs take
the control over drivers operations. EN pin enables the driver: if low will keep all MOSFET
OFF (HiZ) regardless of the status of PWM. When EN is high, the PWM input takes the
control: if left floating, the internal resistor divider sets the HiZ State: both MOSFETS are
kept in the OFF state until PWM transition.
After UVLO crossing and while in HiZ, the preliminary-OV protection is activated: if the
voltage senses through the PHASE pin overcomes about 1.8 V, the low-side MOSFET is
latched ON in order to protect the load from dangerous over-voltage. The Driver status is
reset from a PWM transition.
Driver power supply as well as power conversion input are flexible: 5 V and 12 V can be
chosen for high-side and low-side MOSFET voltage drive.
HS Gate
HiZ
HiZ
LS Gate
tdead_LH
tdead_HL
tprop_ L
tprop_H
tprop_L
thold-off thold-off
7/16
Device description and operation L6743B
8/16
L6743B Device description and operation
Drivers' power is the power needed by the driver to continuously switch ON and OFF
the external MOSFETs; it is a function of the switching frequency and total gate charge
of the selected MOSFETs. It can be quantified considering that the total power PSW
dissipated to switch the MOSFETs dissipated by three main factors: external gate
resistance (when present), intrinsic MOSFET resistance and intrinsic driver resistance.
This last term is the important one to be determined to calculate the device power
dissipation.
The total power dissipated to switch the MOSFETs results:
P SW = F SW ( Q GHS PVCC + Q GLS VCC )
9/16
Device description and operation L6743B
R hiHS R loHS
P SW HS = --- C GHS PVCC Fsw --------------------------------------------------------------- -
1 2
- + ---------------------------------------------------------------
2 R hiHS + R GateHS + R iHS R loHS + R GateHS + R iHS
R hiLS R loLS
P SW LS = --- C GLS VCC Fsw ------------------------------------------------------------- -
1 2
- + -------------------------------------------------------------
2 R hiLS + R GateLS + R iLS R loLS + R GateLS + R iLS
The total power dissipated from the driver can then be determined as follow:
P = P DC + P SW HS + P SW LS
VCC BOOT
RhiHS
RhiLS
LGATE HGATE
RloHS
RloLS
CGLS
CGHS
GND PHASE
LS DRIVER LS MOSFET HS DRIVER HS MOSFET
10/16
L6743B Device description and operation
VCC BOOT
CGD CGD
RBOOT RBOOT
RGATE RINT RGATE RINT
LGATE HGATE
CBOOT CGS CDS CBOOT CGS CDS
GND PHASE
LS DRIVER LS MOSFET HS DRIVER HS MOSFET
11/16
Device description and operation L6743B
Rboot Cboot
BOOT 1 8 UGATE
L6743B
PWM 2 7 PHASE
EN 3 6 GND
VCC 4 5 LGATE
12/16
L6743B Package mechanical data
13/16
Package mechanical data L6743B
DIMENSIONS
mm mils
REF. PACKAGE AND
MIN. TYP. MAX. MIN. TYP. MAX. PACKING INFORMATION
A 0.80 0.90 1.00 31.49 35.43 39.37
e 0.50 19.68
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L6743B Revision history
7 Revision history
15/16
L6743B
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