Professional Documents
Culture Documents
BJT and Mosfet
BJT and Mosfet
2. A BJT has an emitter, collector and base, while a MOSFET has a gate, source
and drain.
3. BJTs are preferred for low current applications, while MOSFETs are for high
power functions.
Subsections
The output current of the p-channel MOSFET is typically much lower than the
current of an n-channel MOSFET with similar dimensions and dopings. This is
due to the lower carrier mobility of holes compared to electrons. As the
characteristics of the complementary transistors should be as equal as
possible, the width of the p-channel MOSFET is typically made larger to
compensate the difference. In our example device the necessary geometry
factor is to obtain equal drain currents for equal gate biases.
Figure 7.11: Schematic of a CMOS inverter circuit. In the stationary case the
circuit does not consume any power when assuming perfect devices without
that the gates are at the same bias which means that they are always in a
side is nearly zero and the transistor is turned off. The output voltage is
pulled to ground, which is the low state. When the input voltage is in a high-
state, the complementary situation occurs and the pMOSFET is turned on
while the nMOSFET is turned off. The output voltage is therefore pulled to
which is the high-state. It is important to note that in both states, high and low,
no static current flows through the inverter. This is of course only valid when
assuming ideal devices with zero off- and leakage-currents.
Considering negative bias temperature instability, the worst stress conditions
are imposed on the p-channel MOSFET at . At this bias condition
the pMOSFET is turned on, with approximately the same potential at the
source and the drain and negative gate to substrate
voltage .
The voltage transfer characteristic (VTC) gives the response of the inverter
The gate-source voltage of the n-channel MOSFET is equal to while
the gate-source voltage of the p-channel MOSFET calculates as
(7.1
)
and the drain-source voltage of the pMOSFET can be expressed as
(7.2
)
p-channel MOSFET
Figure 7.12: Output characteristics of both transistors up to V. The
resulting drain currents in the inverter circuit must be equal for each .
of the output characteristics of both transistors for each input voltage give the
output voltage . The circles mark five points of the voltage transfer
characteristics.
The mixed-mode of Minimos-NT allows to simulate the whole circuit while the
device characteristics for each device are solved using the semiconductor
device equations. Thus, the degradation of the p-channel MOSFET due to
negative bias temperature instability can be accounted for in the circuit
simulation.
around .
NBT stress has its highest impact on the p-channel MOSFET during low
input . At this condition the transistor has a gate to substrate voltage
of approximately . When the circuit is additionally subject to thermal
stress, then the threshold voltage of the p-channel transistor is degraded. As
the n-channel device has a much lower susceptibility to this type of stress
(Section 6.3.7), the circuit loses its symmetry. As shown in Figure 7.15, is the
switching point of the output potential moved to a lower input voltage. An
voltages .
Not only in the stationary case does the degradation influence the circuit
performance. Transient simulations show (Figure 7.16 and 7.17) that the
switching behavior of a circuit comprising a degraded p-channel MOSFET is
different. This must be kept in mind when designing timing-critical CMOS
circuits.
Next: 7.3 6T SRAM Cell Up: 7. Case Studies Previous: 7.1 Power MOS
Devices