STN3NF06

N-channel 60V - 0.07Ω -4A - SOT-223

STripFET™ II Power MOSFET

General features
VDSS
Type RDS(on) ID
(@Tjmax) 2
STN3NF06 60V <0.1Ω 4A
3
■ Exceptional dv/dt capability 2
1
■ 100% avalanche tested
SOT-223
■ Avalanche rugged technology

Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density Internal schematic diagram
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

Applications
■ Switching application

Order codes
Part number Marking Package Packaging
STN3NF06 N3NF06 SOT-223 Tape & reel

February 2007 Rev 6 1/12

www.st.com 12
Contents STN3NF06

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuit ................................................ 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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STN3NF06 Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) 60 V

VGS Gate-source voltage ± 20 V
ID Drain current (continuous) at TC = 25°C 4 A
ID Drain current (continuous) at TC=100°C 2.9 A
(1)
IDM Drain current (pulsed) 16 A
PTOT Total dissipation at TC = 25°C 3.3 W
Derating factor 0.026 W/°C
dv/dt (2) Peak diode recovery voltage slope 10 V/ns
EAS (3)
Single pulse avalanche energy 200 mJ
TJ Operating junction temperature
-55 to 150 °C
Tstg Storage temperature
1. Pulse width limited by safe operating area
2. ISD ≤4 A, di/dt ≤150A/µs, VDD ≤V(BR)DSS, TJ ≤TJMAX
3. Starting Tj = 25 oC, ID = 4A, VDD = 30V

Table 2. Thermal data

Rthj-pcb Thermal resistance junction-PCB(1) max 38 °C/W
Rthj-pcb Thermal resistance junction-PCB(2) max 100 °C/W
Maximum lead temperature for soldering
Tl(3) 260 °C
purpose typ
1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz. of Cu. and t < 10 sec.
2. When Mounted on minimum recommended footprint
3. for 10 sec. 1.6 mm from case

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Electrical characteristics STN3NF06

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 250 µA, VGS= 0 60 V
voltage

Zero gate voltage drain VDS = Max rating, 1 µA

IDSS
current (VGS = 0) VDS = Max rating @125°C 10 µA

Gate body leakage current

IGSS VGS = ±20V ± 100 nA
(VDS = 0)

VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 2 3 4 V

Static drain-source on
RDS(on) VGS= 10V, ID= 1.5A 0.07 0.10 Ω
resistance

Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS= 15V, ID=1.5A 3 S

Input capacitance
Ciss 315 pF
Output capacitance
Coss VDS =25V, f=1 MHz, VGS=0 70 pF
Reverse transfer
Crss 30 pF
capacitance
Qg Total gate charge VDD=48V, ID = 3A 10 13 nC
Qgs Gate-source charge VGS =10V 3.5 nC
Qgd Gate-drain charge (see Figure 14) 3.5 nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Table 5. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

VDD=30 V, ID=1.5A,
td(on) Turn-on delay time 7 ns
RG=4.7Ω, VGS=10V
tr rise time 18 ns
(see Figure 13)
VDD=30 V, ID=1.5A,
td(off) Turn-off delay time 17 ns
RG=4.7Ω, VGS=10V
tf fall time 6 ns
(see Figure 13)

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STN3NF06 Electrical characteristics

Table 6. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max Unit

ISD Source-drain current 4 A

(1)
ISDM Source-drain current (pulsed) 16 A

VSD(2) Forward on voltage ISD=4A, VGS=0 1.3 V

ISD=4 A,
trr Reverse recovery time 50 ns
di/dt = 100A/µs,
Qrr Reverse recovery charge 88 nC
VDD=25 V, Tj=150°C
IRRM Reverse recovery current 3.5 A
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%

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Electrical characteristics STN3NF06

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

Figure 3. Output characteristics Figure 4. Transfer characteristics

Figure 5. Transconductance Figure 6. Static drain-source on resistance

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STN3NF06 Electrical characteristics

Figure 7. Gate charge vs. gate-source voltage Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs.
vs. temperature temperature

Figure 11. Source-drain diode forward Figure 12. Normalized breakdown voltage vs.
characteristics temperature

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Test circuit STN3NF06

3 Test circuit

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit
resistive load

Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test
switching and diode recovery times circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

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STN3NF06 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

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Package mechanical data STN3NF06

SOT-223 MECHANICAL DATA

mm mils
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

a 2.27 2.3 2.33 89.4 90.6 91.7

b 4.57 4.6 4.63 179.9 181.1 182.3

c 0.2 0.4 0.6 7.9 15.7 23.6

d 0.63 0.65 0.67 24.8 25.6 26.4

e1 1.5 1.6 1.7 59.1 63 66.9

e4 0.32 12.6

f 2.9 3 3.1 114.2 118.1 122.1

g 0.67 0.7 0.73 26.4 27.6 28.7

l1 6.7 7 7.3 263.8 275.6 287.4

l2 3.5 3.5 3.7 137.8 137.8 145.7

L 6.3 6.5 6.7 248 255.9 263.8

L l2
e1

a d
c e4
b

C
l1

B C E

g
P008B

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STN3NF06 Revision history

5 Revision history

Table 7. Revision history

Date Revision Changes

21-Jun-2004 4 Complete datasheet

04-Oct-2006 5 The document has been reformatted
01-Feb-2007 6 Typo mistake on Table 1.

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 STN3NF06

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