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Optical Characteristics of Ti2O3
Optical Characteristics of Ti2O3
1. ABSTRACT
It is well known that under certain conditions, one dimensional photonic crystal (1D-PC)
displays total Omni-directional reflection (ODR) band gaps. The enhancement of total Omni-
directional reflection band gap in 1D-PC is calculated theoretically. Using Transfer Matrix
Method (TMM) and Bloch theorem, the reflectivity of one dimensional periodic structure for TE
and TM mode at different angles of incidence has been calculated. We study the omnidirectional
reflection (ODR) in one dimensional photonic crystal (PC) structures consisting of alternate
layers of Ti2O3 andAl2 O3. The investigation has also been made for the study the role of ambient
medium and effect of number of layers in the formation of ODR. We also propose the
application of one dimensional multilayered Al2O3- Ti2O3 structure which can be used as a band
stop filter in designed wavelength range and also as a suitable material for making anti-reflection
2. INTRODUCTION
Photonic crystals (PCs), characterized by electromagnetic forbidden bands or photonic band gaps
(PBGs), are regular arrays of materials with different refractive indices. In other words, the
propagation of electromagnetic waves, whose frequencies lie within the PBGs, is prohibited.
Since the concept of was first proposed in 1984 [1,2],PCs have been a hot research topic and
1
have attracted intensive attention [3-13]. PCs are classified mainly into three categories
according to the dimensionality of the stack: one dimensional (1D), two dimensional (2D), and
three dimensional (3D). PCs that work in microwave and far-infrared regions are relatively easier
to fabricate. However, PCs that work in visible and the infrared (IR) regions, especially, 3D PCs
are difficult to fabricate because of their small lattice constants, which have to comparable to the
wavelength[14]. Therefore ,1D PCs, which can easily be produced by the thin film deposition
techniques , are preferable for use in the visible and IR regions. 1D PCs have a wide variety of
applications. For instance, 1D PCs based on dielectric multilayer can be used as planar antennae,
in which complete reflectance at desired frequencies is achieved , due to PBGs; thus , the
emission efficiency is greatly enhanced compared with ordinary planar antennas whose metallic
substrates absorb much energy. Another application is the vertical cavity surface- emitting laser
(VCSEL) [15],which has been recognized as an important light source for parallel optielectronic
systems. Fink et al.have shown theoretically [16] and experimentally [17] that omni-directional
PBGs can be obtained for both transverse- electric (TE) and transverse-magnetic (TM)
polarizations within a IDPC. It offers the possibility of controlling the propagation of light in
Oxide films are often employed as components of optical devises in the visible and the IR
regions because of their relatively easy fabrication, high thermal stability, and high resistance
against wear and corrosion, as well as their low absorption. This work reports the reflectivity of
2
3. THEORETICAL ANALYSIS
To calculate the dispersion relation and reflection characteristics for the incident
electromagnetic wave, the Maxwell’s equation is solved numerically by the transfer matrix
method [19]
Fig 1. Periodic refractive index profile of the structure having refractive indices n1 and n2
respectively.
The geometry of the structure under study is shown in the Fig. 1.Consider the
composed of periodic arrays of two different materials with a refractive index n1 and n2
and layer thickness d1 and d2. The indices of refraction of the system are given
as,
3
n1 ,0< x < d1
n ( x )=
{
n2 , d 1< x <d 2
with n(x) = n(x + d). (1)
where d1 and d2 are the thicknesses of the layers and d = d1+ d2 is the period of the structure. The
electromagnetic field distribution within each layer can be expressed as the sum of right- and
left-hand side propagating wave. The electric field within the both layers of the nth unit cell can
be written as
−i k 1( x−nd )
[
E1(x) = ( an e ) +bn e i k (x−nd ) ] eiω t
1
(2)
−i k2 (x−nd)
[
E2(x) = ( c n e ) + d n e i k (x−nd ) ] e iωt
2
(3)
1
ni ω 2 2 ni ω
Where k i=
[( ) ]
c
−β
2
=
c
cos θi ;θi is the ray angle in the ith layer (i = 1, 2), β is the
propagation constant and ni is the refractive index of the constituent layers.The coefficients an,
bn, cn, and dn are related through the continuity boundary conditions at the interfaces.
This continuity condition leads to the matrix equations, which relates the coefficient in the first
an−1 an
( ) ()
b n−1
=Tn
bn
(4)
4
Tn = ( CA DB ) (5)
1 1
A=e
i k 1 d1
[ ( )
cos k 2 d 2 + i η+ sin k 2 d 2
2 η ] (6)
1 1
B=e
−i k 1 d1
[ ( )
2
i η− sin k 2 d 2
η ] (7)
1 1
C=e
i k 1 d1
[ ( ) ]
− i η− sin k 2 d 2
2 η
(8)
1 1
D=e
−i k 1 d1
[ ( )
cos k 2 d2 − i η+ sin k 2 d 2
2 η ] (9)
The parameter η depends on the polarization. For the TE and TM polarizations, η is given by
k1
ηTE = (10)
k2
and
k 1 n22
ηTM = 2 (11)
k 2 n1
For finite stacks, the coefficient of right and left hand side propagating wave in both sides of the
multilayer structure aN and bN, are calculated by multiplying transfer matrix of each cell as
5
a0 aN
()
b0
= T1 T2.....TN
bN ( ) (12)
where N is the total number of the cell. The coefficient of reflection is given by solving above
b0
rN =() a0
(13)
Now, according to Bloch theorem, the electric field vector is of the form
E = EK(x) e i(ωt−Kx), where EK(x) is periodic with the period ‘d’. For the determination of K as a
( CA DB )(ab ) =e ( ab )
n
n
iKd n
n
(15)
The solution of this matrix equation leads to the dispersion relation for the PC structure
containing the alternate stacks of positive index materials, denoted by PC1, is given by
K(ω) = ( 1d ) cos−1
¿¿ (16)
6
,
In this section we present the numerical analysis of the proposed PC structure and show
the Omni-directional reflection bands for both TE and TM polarizations. The value of
refractive index for the Al2O3 film is taken as 1.63 and Ti 2O3 is 2.34 at 550nm. The
thickness of the layers are taken as according to quarter wave stacks condition i.e.
d1=λ0/4n1 and d2=λ0/4n2. The reflection spectra obtained for the total number of layers
N=10 is depicted in Fig-2 for both TE and TM polarizations. From the study of these
figures it is observed that as the angle of incidence increases the reflection band width
increases for TE mode while it decreases for TM mode and at the same time the
reflection band is shifted towards lower wavelength region (blue shifted). The width of
reflection band has larger value for the TE mode in comparison to the TM mode.
TE MODE TM MODE
Incident Reflected region Band Reflected region Band Omini-PBG
angle nm width nm width (531.2- 477.5)=53.7nm
(nm) (nm)
00 477.5-648.4 170.9 477.5-648.4 170.9
300 458.1-629.7 171.6 463-620.7 157.7
7
600 416.1-591.3 175.2 431.9-562.1 130.2
890 393.4-571.3 177.9 414.8-531.2 116.4
Table 1
At oblique incidence, different polarizations (TE and TM) exhibit different reflectance. If a PC
reflects light of both polarizations incident at any angle within a certain frequency range ,The PC
The Omni-PBG is narrow, mainly because of the reason that the refractive index contrast
between the two sublayers of the system is not too large. It may also partly be attributed to the
strong effect of the Brewster angle for TM polarizations within the given system
In our next study we have seen the effect of ambient medium on Omni-PBG. The analysis shows
that the structure will give Omni-PBG if nambient < n1 and width of Omni-PBG decreases as nambient
Table -2
8
We have also studied the effect of numbers of layers on Omni- PBG. The study shows that as we
increase the number of layers the reflection band becomes broader for the same thickness and
refractive index contrast. As N increases the width of reflection band decreases and the central
Table -3
The reflectance generally increases as more layers are included in the multilayered system. Due
to strong effect of the Brewster angle, the present system doesn’t have an Omni-PBG at the
narrow Omni-PBG , away from designed wavelength, can be obtained in structure with 10 or
9
1 1
0.9 0.9
0.8 0.8
0.7 0.7
0.6 0.6
reflectivity
reflectivity
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.1 0.1
0 0
400 450 500 550 600 650 700 750 800 400 450 500 550 600 650 700 750 800
wavelength in nm wavelength in nm
(a) (e)
1 1
0.9 0.9
0.8 0.8
0.7 0.7
0.6 0.6
reflectivity
reflectivity
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.1 0.1
0 0
400 450 500 550 600 650 700 750 800 400 450 500 550 600 650 700 750 800
wavelength in nm wavelength in nm
(b) (f)
10
1
1
0.9 0.9
0.8 0.8
0.7 0.7
0.6 0.6
reflectivity
reflectivity
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.1 0.1
0 0
400 450 500 550 600 650 700 750 800 400 450 500 550 600 650 700 750 800
wavelength in nm wavelength in nm
(c) (g)
1 1
0.9 0.9
0.8 0.8
0.7 0.7
0.6 0.6
reflectivity
reflectivity
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.1 0.1
0 0
300 350 400 450 500 550 600 650 700 750 800 400 450 500 550 600 650 700 750 800
wavelength in nm wavelength in nm
(d) (h)
Fig 2 : The reflectance spectra for TE and TM modes showing the total reflection region and
bandwidth for n1=1.63,n2=2.34, d1=84.35nm, d2=58.76 nm and N=10 at various incident angles
(a) Ө= 00 ,TE (b) Ө=300 ,TE (c) Ө=600 ,TE (d) Ө=890 ,TE (e) Ө=00 ,TM (f) Ө=300 ,TM (g)
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1 1 * *
0.8 0.8
0.7 0.7
0.6 0.6
reflectivity
reflectivity
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.1 0.1
0 0
400 450 500 550 600 650 700 750 800 400 450 500 550 600 650 700 750 800
wavelength in nm wavelength in nm
(a) (b)
0.9
0.8
0.8
0.7 0.7
0.6 0.6
reflectivity
0.5 0.5
reflectivity
0.4 0.4
0.3
0.3
0.2
0.2
0.1
0.1
0
300 350 400 450 500 550 600 650 700 750 800
wavelength in nm 0
300 350 400 450 500 550 600 650 700 750 800
wavelength in nm
(c) (d)
Fig-3 The reflectance curve for n1=1.63, n2=2.34 and d1=84.35 nm, d2=58.36 nm, N=10,
(a) ) Ө= 00 ,TE , nambient=1 (b) Ө= 890 ,TM , nambient=1 (c) Ө= 890 ,TM , nambient=1.1
12
0.9
0.8
0.7
0.6
reflectivity
0.5
0.4
0.3
0.2
0.1
0
400 450 500 550 600 650 700 750 800
wavelength in nm
0.7
0.6
0.5
0.4
reflectivity
0.3
0.2
0.1
0
300 350 400 450 500 550 600 650 700 750 800
wavelength in nm
(a) (b)
13
1
0.9
0.9
0.8
0.8
0.7
0.7
0.6
0.6
reflectivity
reflectivity
0.5
0.5
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
0
0 400 450 500 550 600 650 700 750 800
400 450 500 550 600 650 700 750 800 wavelength in nm
wavelength in nm
(c)
(d)
1
1
0.9
0.9
0.8
0.8
0.7
0.7
0.6 0.6
reflectivity
reflectivity
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.1 0.1
0 0
400 450 500 550 600 650 700 750 800 400 450 500 550 600 650 700 750 800
wavelength in nm wavelength in nm
(e) (f)
14
1 1
0.9 0.9
0.8 0.8
0.7 0.7
0.6 0.6
reflectivity
reflectivity
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.1 0.1
0 0
400 450 500 550 600 650 700 750 800 400 450 500 550 600 650 700 750 800
wavelength in nm wavelength in nm
(g) (h)
1 1
0.9 0.9
0.8 0.8
0.7 0.7
0.6
0.6
reflectivity
reflectivity
0.5
0.5
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
0
400 450 500 550 600 650 700 750 800 0
wavelength in nm 400 450 500 550 600 650 700 750 800
wavelength in nm
(i) (j)
15
1
0.9
0.8
0.7
0.6
reflectivity
0.5
0.4
0.3
0.2
0.1
0
300 350 400 450 500 550 600 650 700 750 800
wavelength in nm
0.9
0.8
0.7
0.6
reflectivity
0.5
0.4
0.3
0.2
0.1
0
300 350 400 450 500 550 600 650 700 750 800
wavelength in nm
(k) (l)
Fig-4 : The reflectance curve for n1=1.63, n2=2.34 and d1=84.35 nm, d2=58.36 nm,
16
(a) Ө= 00 ,TE, N=4 (b) Ө= 890 ,TM, N=4 (c) Ө= 00 ,TE, N=8 (d) Ө= 890 ,TM, N=8 (e) Ө= 00
,TE, N=12, (f) Ө= 890 ,TM, N=12 (g) Ө= 00 ,TE, N=16 (h) Ө=890 ,TM N=16 (i) Ө= 00
,TE N=25 (j) Ө= 890 ,TM, N=25 (k) Ө= 00 ,TE N=50 (l) Ө= 890 ,TM, N=50
In this numerical calculation we have considered the optical thickness of each oxide film is
λ0/4, where λ0 is the designed wavelength 550nm, which is close to middle of the visible region.
It means in this structure n1=1.63, n2=2.34, d1=137.5 nm, d2=137.5 nm. It is seen that when N is
small, say, N=1 or 2, a local minimum occurs at the designed wavelength which can be ascribed
to the fact that the top Al2O3 has a relatively low refractive index. However when N is large, the
reflection spectrum has a broad maximum around the designed wavelength. If N is large enough
then a complete reflectance is found to a certain range, almost centered at the designed
wavelength. Such type of structure can be used as a band stop filter around the designed
Moreover it is also found that such structures exhibit almost zero reflectance within wavelength
range 600 nm to 800 nm (Fig -5). Thus one dimensional multilayered Al 2O3- Ti2O3 (λ0/4)
photonic crystal structure can be used as a good candidate for making anti-reflection coatings in
visible spectrum from 600nm to 800nm wavelength range when N is large enough. Hence the
proposed structure can be used as a band stop filter in designed wavelength 550nm and also as a
suitable material for anti-reflection coating in the visible range from 600nm to 800nm.
17
0.14 0.5
0.45
0.12
0.4
0.1
0.35
0.08 0.3
reflectivity
reflectivity
0.25
0.06
0.2
0.04
0.15
0.02 0.1
0.05
0
400 450 500 550 600 650 700 750 800 0
wavelength in nm 400 450 500 550 600 650 700 750 800
wavelength in nm
(a) (b)
* *
0.9 1 nl=25;theta=89;TM * *
0.7 0.8
0.6 0.7
reflectivity
0.5 0.6
reflectivity
0.4 0.5
0.3 0.4
0.2 0.3
0.1 0.2
0 0.1
400 450 500 550 600 650 700 750 800
wavelength in nm 0
400 450 500 550 600 650 700 750 800
wavelength in nm
(c) (d)
18
1 * * 1 * *
0.8 0.8
0.7 0.7
0.6 0.6
reflectivity
reflectivity
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.1 0.1
0 0
400 450 500 550 600 650 700 750 800 400 450 500 550 600 650 700 750 800
wavelength in nm wavelength in nm
(e) (f)
Fig -5: Reflection spectra as a function of wavelength for Al 2O3- Ti2O3 (λ0/4) structure at normal
incidence, (a) N=1 (b) N=4 (c) N=8 (d) N=10 (e) N=25 (f) N=50
5. REFRENCES :
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[13] S.H.Han, Q.Han Park, Y.S.Park, Y.Roh and H.S.Jeon, J. Korean Phys. Soc. 45, 9 (2004).
[14] K.Inoue and K.Ohtake, Photonic crystals – Physics, Fabrication and applications (Springer
[15] K.Iga, F.Koyama and S. Kinoshita, IEEE J.Quantum Electron. 29, 1845 (1988).
[16] J.N.Winn, Y.Fink, S.H.Fan and J.D.Joannopoulos, Opt. Lett. 23, 1573 (1998).
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