Isc MJ2955: Isc Silicon PNP Power Transistors
Isc MJ2955: Isc Silicon PNP Power Transistors
Isc MJ2955: Isc Silicon PNP Power Transistors
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-
: hFE=20-70@IC= -4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1V(Max)@ IC= -4A
·Complement to Type 2N3055
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
isc Website:www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
fT Current Gain-Bandwidth Product IC= -0.5A ; VCE= -10V;ftest= 1.0MHz 2.5 MHz
isc Website:www.iscsemi.cn 2
INCHANGE Semiconductor isc Product Specification
isc Website:www.iscsemi.cn