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    Isc 2SA1358: Isc Silicon PNP Power Transistor

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    Sebastian Correa
    The 2SA1358 is a high collector-emitter breakdown voltage PNP power transistor from INCHANGE Semiconductor suitable for audio frequency power amplifier applications driving 60-80 Watts. It has a minimum collector-emitter breakdown voltage of -120V and is designed to complement the 2SC3421 transistor. Key electrical characteristics include a DC current gain ranging from 80-240 and an output capacitance of 30pF at 1MHz.

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    Isc 2SA1358: Isc Silicon PNP Power Transistor

    Uploaded by

    Sebastian Correa
    58 views2 pages
    The 2SA1358 is a high collector-emitter breakdown voltage PNP power transistor from INCHANGE Semiconductor suitable for audio frequency power amplifier applications driving 60-80 Watts. It has a minimum collector-emitter breakdown voltage of -120V and is designed to complement the 2SC3421 transistor. Key electrical characteristics include a DC current gain ranging from 80-240 and an output capacitance of 30pF at 1MHz.

    Original Description:

    Transistor BJT 2sa1358

    Original Title

    2sa1358

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    The 2SA1358 is a high collector-emitter breakdown voltage PNP power transistor from INCHANGE Semiconductor suitable for audio frequency power amplifier applications driving 60-80 Watts. It has a minimum collector-emitter breakdown voltage of -120V and is designed to complement the 2SC3421 transistor. Key electrical characteristics include a DC current gain ranging from 80-240 and an output capacitance of 30pF at 1MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    58 views2 pages

    Isc 2SA1358: Isc Silicon PNP Power Transistor

    Uploaded by

    Sebastian Correa
    The 2SA1358 is a high collector-emitter breakdown voltage PNP power transistor from INCHANGE Semiconductor suitable for audio frequency power amplifier applications driving 60-80 Watts. It has a minimum collector-emitter breakdown voltage of -120V and is designed to complement the 2SC3421 transistor. Key electrical characteristics include a DC current gain ranging from 80-240 and an output capacitance of 30pF at 1MHz.

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    © All Rights Reserved
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    of 2

    INCHANGE Semiconductor isc Product Specification

    isc Silicon PNP Power Transistor 2SA1358

    DESCRIPTION
    ·High Collector-Emitter Breakdown Voltage
    : V(BR)CEO= -120V(Min)
    ·Complement to Type 2SC3421

    APPLICATIONS
    ·Designed for audio frequency power amplifier applications.
    ·Suitable for driver of 60 to 80 Watts audio amplifier.

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage -120 V

    VCEO Collector-Emitter Voltage -120 V

    VEBO Emitter-Base Voltage -5 V

    IC Collector Current-Continuous -1 A

    IBB Base Current-Continuous -0.1 A

    Collector Power Dissipation


    10
    @ TC=25℃
    PC W
    Collector Power Dissipation
    1.5
    @ Ta=25℃

    TJ Junction Temperature 150 ℃

    Tstg Storage Temperature Range -55~150 ℃

    isc Website：www.iscsemi.cn
    INCHANGE Semiconductor isc Product Specification

    isc Silicon PNP Power Transistor 2SA1358

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -120 V

    V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -5 V

    VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.0 V

    VBE(on) Base-Emitter On Voltage IC= -500mA ; VCE= -5V -1.0 V

    ICBO Collector Cutoff Current VCB= -120V; IE= 0 -0.1 μA

    IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 μA

    hFE DC Current Gain IC= -0.1A ; VCE= -5V 80 240

    fT Current-Gain—Bandwidth Product IC= -0.1A ; VCE= -5V 120 MHz

    COB Output Capacitance IE= 0; VCB= -10V, ftest= 1MHz 30 pF

    ‹ hFE Classifications

    O Y

    80-160 120-240

    isc Website：www.iscsemi.cn 2

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