ZTX650 NPN SILICON PLANAR ZTX650

ZTX651 MEDIUM POWER TRANSISTORS ZTX651

ISSUE 2 – JULY 94
FEATURES
ZTX650 ZTX651
PARAMETER SYMBOL UNIT CONDITIONS. * 60 Volt VCEO
MIN. TYP. MAX. MIN. TYP. MAX. * 2 Amp continuous current
* Low saturation voltage
* Ptot=1 Watt
Transition fT 140 175 140 175 MHz IC=100mA, VCE=5V C
Frequency f=100MHz B
E

Switching Times ton 45 45 ns IC=500mA, VCC=10V E-Line

IB1=IB2=50mA TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
toff 800 800 ns
PARAMETER SYMBOL ZTX650 ZTX651 UNIT
Output Capacitance Cobo 30 30 pF VCB=10V f=1MHz
Collector-Base Voltage VCBO 60 80 V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Collector-Emitter Voltage VCEO 45 60 V
Emitter-Base Voltage VEBO 5 V
Peak Pulse Current ICM 6 A
Continuous Collector Current IC 2 A
THERMAL CHARACTERISTICS
Power Dissipation at Tamb=25°C Ptot 1 W
PARAMETER SYMBOL MAX. UNIT derate above 25°C 5.7 mW/°C

Thermal Resistance:Junction to Ambient1 Rth(j-amb)1 175 °C/W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
Junction to Ambient2 Rth(j-amb)2† 116 °C/W ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Junction to Case Rth(j-case) 70 °C/W
ZTX650 ZTX651
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. PARAMETER SYMBOL UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.

Collector-Base V(BR)CBO 60 80 V IC=100µA

Breakdown Voltage
2.5 200 Collector-Emitter V(BR)CEO 45 60 V IC=10mA*
Breakdown Voltage
Max Power Dissipation - (Watts)

Thermal Resistance (°C/W)

D=1 (D.C.)

2.0 t1 D=t1/tP Emitter-Base V(BR)EBO 5 5 V IE=100µA

C
as Breakdown Voltage
e tP
1.5 te
m Collector Cut-Off ICBO 0.1 µA VCB=45V
pe
ra
100 D=0.5 Current 0.1 µA VCB=60V
1.0 Am
bie
tu
re 10 µA VCB=45V,Tamb=100°C
nt t
em 10 µA VCB=60V,Tamb=100°C
per D=0.2
at u
0.5 re D=0.1 Emitter Cut-Off IEBO 0.1 0.1 µA VEB=4V
Single Pulse
Current
0 0
-40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector-Emitter VCE(sat) 0.12 0.3 0.12 0.3 V IC=1A, IB=100mA*
T -Temperature (°C) Pulse Width (seconds) Saturation Voltage 0.23 0.5 0.23 0.5 V IC=2A, IB=200mA*
Base-Emitter VBE(sat) 0.9 1.25 0.9 1.25 V IC=1A, IB=100mA*
Derating curve Maximum transient thermal impedance Saturation Voltage
Base-Emitter VBE(on) 0.8 1 0.8 1 V IC=1A, VCE=2V*
Turn-On Voltage

3-220 3-219
 ZTX650 NPN SILICON PLANAR ZTX650
ZTX651 MEDIUM POWER TRANSISTORS ZTX651
ISSUE 2 – JULY 94
FEATURES
ZTX650 ZTX651
PARAMETER SYMBOL UNIT CONDITIONS. * 60 Volt VCEO
MIN. TYP. MAX. MIN. TYP. MAX. * 2 Amp continuous current
* Low saturation voltage
* Ptot=1 Watt
Transition fT 140 175 140 175 MHz IC=100mA, VCE=5V C
Frequency f=100MHz B
E

Switching Times ton 45 45 ns IC=500mA, VCC=10V E-Line

IB1=IB2=50mA TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
toff 800 800 ns
PARAMETER SYMBOL ZTX650 ZTX651 UNIT
Output Capacitance Cobo 30 30 pF VCB=10V f=1MHz
Collector-Base Voltage VCBO 60 80 V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Collector-Emitter Voltage VCEO 45 60 V
Emitter-Base Voltage VEBO 5 V
Peak Pulse Current ICM 6 A
Continuous Collector Current IC 2 A
THERMAL CHARACTERISTICS
Power Dissipation at Tamb=25°C Ptot 1 W
PARAMETER SYMBOL MAX. UNIT derate above 25°C 5.7 mW/°C

Thermal Resistance:Junction to Ambient1 Rth(j-amb)1 175 °C/W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
Junction to Ambient2 Rth(j-amb)2† 116 °C/W ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Junction to Case Rth(j-case) 70 °C/W
ZTX650 ZTX651
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. PARAMETER SYMBOL UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.

Collector-Base V(BR)CBO 60 80 V IC=100µA

Breakdown Voltage
2.5 200 Collector-Emitter V(BR)CEO 45 60 V IC=10mA*
Breakdown Voltage
Max Power Dissipation - (Watts)

Thermal Resistance (°C/W)

D=1 (D.C.)

2.0 t1 D=t1/tP Emitter-Base V(BR)EBO 5 5 V IE=100µA

C
as Breakdown Voltage
e tP
1.5 te
m Collector Cut-Off ICBO 0.1 µA VCB=45V
pe
ra
100 D=0.5 Current 0.1 µA VCB=60V
1.0 Am
bie
tu
re 10 µA VCB=45V,Tamb=100°C
nt t
em 10 µA VCB=60V,Tamb=100°C
per D=0.2
at u
0.5 re D=0.1 Emitter Cut-Off IEBO 0.1 0.1 µA VEB=4V
Single Pulse
Current
0 0
-40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector-Emitter VCE(sat) 0.12 0.3 0.12 0.3 V IC=1A, IB=100mA*
T -Temperature (°C) Pulse Width (seconds) Saturation Voltage 0.23 0.5 0.23 0.5 V IC=2A, IB=200mA*
Base-Emitter VBE(sat) 0.9 1.25 0.9 1.25 V IC=1A, IB=100mA*
Derating curve Maximum transient thermal impedance Saturation Voltage
Base-Emitter VBE(on) 0.8 1 0.8 1 V IC=1A, VCE=2V*
Turn-On Voltage

3-220 3-219
 ZTX650
ZTX651
TYPICAL CHARACTERISTICS
0.6

0.5
225
0.4
VCE(sat) - (Volts)

IC/IB=10
175

hFE - Gain
0.3 VCE=2V

125
0.2

0.1 75

0
0.0001 0.001 0.01 0.1 1 10 0
0.01 0.1 1 10

IC - Collector Current (Amps) IC - Collector Current (Amps)

VCE(sat) v IC hFE v IC

1.4
1.2
1.2
1.0
VBE(sat) - (Volts)

VBE - (Volts)

1.0 VCE=2V
IC/IB=10
0.8
0.8

0.6
0.6
0.4
0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10

IC - Collector Current (Amps) IC - Collector Current (Amps)

VBE(sat) v IC VBE(on) v IC
Single Pulse Test at Tamb=25°C
10
td
IC - Collector Current (Amps)

tr IB1=IB2=IC/10
tf ts
ns ns
140 1400

1 120 1200
ts
Switching time

100 1000

D.C. td
80 800
1s
100ms
10ms 60 600
tf
0.1 1.0ms
400
40
100µs tr
20 200

0 0
ZTX650
ZTX650/51-5 0.01 0.1 1
ZTX651
0.01
0.1 1 10 100
VCE - Collector Voltage (Volts) IC - Collector Current (Amps)

Safe Operating Area Switching Speeds

3-221