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  • Silicon PNP Darlington Power Transistors

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    This document provides product specifications for the 2SB1560 silicon PNP Darlington power transistor. It includes descriptions of its applications in audio, regulators and general purposes. The document lists its absolute maximum ratings, characteristics such as DC current gain, transition frequency and switching times. It also provides the transistor's package outline and pin descriptions.

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    2sb1560

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    This document provides product specifications for the 2SB1560 silicon PNP Darlington power transistor. It includes descriptions of its applications in audio, regulators and general purposes. The document lists its absolute maximum ratings, characteristics such as DC current gain, transition frequency and switching times. It also provides the transistor's package outline and pin descriptions.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    Download as pdf or txt
    23 views4 pages

    Silicon PNP Darlington Power Transistors

    Uploaded by

    chevicit
    This document provides product specifications for the 2SB1560 silicon PNP Darlington power transistor. It includes descriptions of its applications in audio, regulators and general purposes. The document lists its absolute maximum ratings, characteristics such as DC current gain, transition frequency and switching times. It also provides the transistor's package outline and pin descriptions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 4

    JMnic Product Specification

    Silicon PNP Darlington Power Transistors 2SB1560

    DESCRIPTION
    ・With TO-3PN package
    ・Complement to type 2SD2390

    APPLICATIONS
    ・Audio ,regulator and general purpose

    PINNING

    PIN DESCRIPTION

    1 Base

    Collector;connected to
    2
    mounting base
    Fig.1 simplified outline (TO-3PN) and symbol
    3 Emitter

    Absolute maximum ratings(Ta=℃)


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter -160 V

    VCEO Collector-emitter voltage Open base -150 V

    VEBO Emitter-base voltage Open collector -5 V

    IC Collector current -10 A

    IB Base current 1 A

    PC Collector power dissipation TC=25℃ 100 W

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -55~150 ℃


    JMnic Product Specification

    Silicon PNP Darlington Power Transistors 2SB1560

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 -150 V

    VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA -2.5 V

    VBEsat Base-emitter saturation voltage IC=-7A ;IB=-7mA -3.0 V

    ICBO Collector cut-off current VCB=-160V; IE=0 -100 μA

    IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA

    hFE DC current gain IC=-7A ; VCE=-4V 5000

    Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 230 pF

    fT Transition frequency IC=-2A ; VCE=-12V 50 MHz

    Switching times

    ton Turn-on time 0.8 μs

    IC=-7A;RL=10Ω
    ts Storage time IB1=- IB2=-7mA 3.0 μs
    VCC=-70V

    tf Fall time 1.2 μs

    ‹ hFE Classifications
    O P Y

    5000-12000 6500-20000 15000-30000

    2
    JMnic Product Specification

    Silicon PNP Darlington Power Transistors 2SB1560

    PACKAGE OUTLINE

    Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

    3
    JMnic Product Specification

    Silicon PNP Darlington Power Transistors 2SB1560

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