SEMICONDUCTOR KTD1351

TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.

A
R
FEATURES S

ᴌLow Saturation Voltage

E
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A

F
D P

Q
ᴌComplementary to KTB988. DIM MILLIMETERS

B
A 10.30 MAX
B 15.30 MAX
C 0.80
D Φ3.60 +_ 0.20
T E 3.00

H
F 6.70 MAX
MAXIMUM RATING (Ta=25ᴱ) G 13.60 +_ 0.50

G
L
H 5.60 MAX
C C
CHARACTERISTIC SYMBOL RATING UNIT J 1.37 MAX
K 0.50
Collector-Base Voltage VCBO 60 V M M L 1.50 MAX
M 2.54
K
Collector-Emitter Voltage VCEO 60 V N 4.70 MAX

N
1 2 3 O 2.60

O
Emitter-Base Voltage VEBO 7 V J
P 1.50 MAX
Q 1.50
1. BASE R _ 0.20
9.50 +
Collector Current IC 3 A S _ 0.20
8.00 +
2. COLLECTOR (HEAT SINK)
T 2.90 MAX
Base Current IB 0.5 A 3. EMITTER

Collector Power Ta=25ᴱ 2.0

PC W
Dissipation Tc=25ᴱ 30 TO-220AB
Junction Temperature Tj 150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 100 A
Ọ
Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 100 A
Ọ
Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 60 - - V
DC Current Gain hFE (Note) VCE=5V, IC=0.5A 60 - 300
Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=0.2A - 0.25 1.0 V
Base-Emitter Voltage VBE VCE=5V, IC=0.5A - 0.7 1.0 V
Transition Frequency fT VCE=5V, IC=0.5A - 3.0 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 35 - pF

OUTPUT
Turn-on Time ton 20µsec - 0.65 -
I B1
INPUT
IB1 15Ω
Switching Time Storage Time tstg - 1.3 - S
Ọ
I B2
IB2

IB1=-I B2 =0.2A
Fall Time tf VCC =30V - 0.65 -
DUTY CYCLE <
= 1%

Note : hFE Classification O:60ᴕ120 , Y:100ᴕ200 , GR:150ᴕ300

1994. 6. 27 Revision No : 0 1/2

 KTD1351

I C - V CE Pc - Ta
3.0 40

COLLECTOR POWER DISSIPATION PC (W)

90 60 1 Tc=Ta
COLLECTOR CURRENT I C (A)

80 50 INFINITE HEAT SINK

2.5 70 35 2 300x300x2mm Al
40
HEAT SINK
2.0 30 30 3 200x200x2mm Al
HEAT SINK
20 1
25 4 100x100x1mm Al
1.5 HEAT SINK
I B =10mA 5 100x100x1mm Fe
20 2
1.0 HEAT SINK
3
6 50x50x1mm Al
15 HEAT SINK
0.5 COMMON EMITTER 4
Tc=25 C 7 50x50x1mm Fe
10 5
0 HEAT SINK
0 6
8 NO HEAT
0 1 2 3 4 5 6 7 8 5 7
SINK
8
COLLECTOR-EMITTER VOLTAGE VCE (V) 0
0 25 50 75 100 125 150 175 200

AMBIENT TEMPERATURE Ta ( C)

h FE - I C SAFE OPERATING AREA

300 10
IC MAX(PULSED) *
Tc=100 C
DC CURRENT GAIN h FE

5
COLLECTOR CURRENT I C (A)

C
Tc=25

1m
IC MAX(CONTINUOUS)

10 0mS
C

10
Tc=-25

S
3

mS
100
DC *
*
O
50 Tc PER *
=2 A
5 TI 1s
1 C ON
30 *

0.5 * SINGLE NONREPETITIVE

COMMON EMITTER
PULSE Tc=25 C

VCEO MAX.
VCE =5V 0.3
CURVES MUST BE DERATED
10
0.02 0.05 0.1 0.3 1 3 10 LINEARLY WITH INCREASE IN
TEMPERATURE
COLLECTOR CURRENT IC (A)
0.1
1 3 5 10 30 50 100

COLLECTOR-EMITTER VOLTAGE VCE (V)

VCE(sat) - I C
1
COLLECTOR-EMITTER SATURATION

COMMON EMITTER
I C /I B =10
0.5
VOLTAGE VCE(sat) (V)

0.3

C
0.1 100
Tc=

0.05 Tc=25 C
Tc=-25 C
0.03
0.02 0.05 0.1 0.3 1 3 5 10

COLLECTOR CURRENT I C (A)

1994. 6. 27 Revision No : 0 2/2

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