Electronics ENGLISH

A semiconductor is formed by ……… bonds.
A. Covalent
B. Electrovalent
C. Co-ordinate
D. None of the above
ANSWER: A
A semiconductor has ………… temperature coefficient of resistance.
A. Positive
B. Zero
C. Negative
ANSWER: C
The most commonly used semiconductor is ………..
A. Germanium
B. Silicon
C. Carbon
D. Sulphur
ANSWER: B
A semiconductor has generally ……………… valence electrons.
A. 2
B. 3
C. 6
D. 4
ANSWER: D
The resistivity of pure germanium under standard conditions is about ……….
A. 6 x 104 Ω cm
B. 60Ω cm
C. 3 x 106Ω cm
D. 6 x 10-4Ω cm
ANSWER: B
The resistivity of a pure silicon is about ……………
A. 100 Ω cm
B. 6000 Ω cm
C. 3 x 105 Ω m
D. 6 x 10-8 Ω cm
ANSWER: B
When a pure semiconductor is heated, its resistance …………..
A. Goes up
B. Goes down
C. Remains the same
D. Can’t say
ANSWER: B
The strength of a semiconductor crystal comes from ……..

A. Forces between nuclei
B. Forces between protons
C. Electron-pair bonds
ANSWER: C
When a pentavalent impurity is added to a pure semiconductor, it becomes ………
A. An insulator
B. An intrinsic semiconductor
C. p-type semiconductor
D. n-type semiconductor
ANSWER: D
Addition of pentavalent impurity to a semiconductor creates many ……..
A. Free electrons
B. Holes
C. Valence electrons
D. Bound electrons
ANSWER: A
A pentavalent impurity has ………. Valence electrons
A. 3
B. 5
C. 4
D. 6
ANSWER: B
An n-type semiconductor is ………
A. Positively charged
B. Negatively charged
C. Electrically neutral
ANSWER: C
A trivalent impurity has ….. valence electrons
A. 4
B. 5
C. 6
D. 3
ANSWER: D
Addition of trivalent impurity to a semiconductor creates many ……..
A. Holes
B. Free electrons
C. Valence electrons
D. Bound electrons
ANSWER: A
A hole in a semiconductor is defined as …………….
A. A free electron
B. The incomplete part of an electron pair bond
C. A free proton
D. A free neutron
ANSWER: B
A crystal diode has ………
A. one pn junction
B. two pn junctions
C. three pn junctions
D. none of the above
ANSWER: A
A crystal diode has forward resistance of the order of ……………
A. kΩ
B. Ω
C. MΩ
ANSWER: B
If the arrow of crystal diode symbol is positive w.r.t. bar, then diode is ………….. biased.
A. forward
B. reverse
C. either forward or reverse
ANSWER: A
The reverse current in a diode is of the order of ……………….
A. kA
B. mA
C. μA
D. A
ANSWER: C
The forward voltage drop across a silicon diode is about …………………
A. 2.5 V
B. 3 V
C. 10 V
D. 0.7 V
ANSWER: D
A crystal diode is used as ……………
A. an amplifier
B. a rectifier
C. an oscillator
D. a voltage regulator
ANSWER: B
The d.c. resistance of a crystal diode is ………….. its a.c. resistance
A. the same as
B. more than
C. less than
ANSWER: C
An ideal crystal diode is one which behaves as a perfect ……….. when forward biased.
A. conductor
B. insulator
C. resistance material
ANSWER: A
The ratio of reverse resistance and forward resistance of a germanium crystal diode is about ………….
A. 1 : 1
B. 100 : 1
C. 1000 : 1
D. 40,000 : 1
ANSWER: D
The leakage current in a crystal diode is due to …………….
A. minority carriers
B. majority carriers
C. junction capacitance
ANSWER:A
If the temperature of a crystal diode increases, then leakage current ………..
A. remains the same
B. decreases
C. increases
D. becomes zero
ANSWER:C
The PIV rating of a crystal diode is ………….. that of equivalent vacuum diode
A. the same as
B. lower than
C. more than
ANSWER:B
If the doping level of a crystal diode is increased, the breakdown voltage………….
A. remains the same
B. is increased
C. is decreased
ANSWER:C
The knee voltage of a crystal diode is approximately equal to ………….
A. applied voltage
B. breakdown voltage
C. forward voltage
D. barrier potential
ANSWER:D
When the graph between current through and voltage across a device is a straight line, the device
eferred to as ……………….
A. linear
B. active
C. nonlinear
D. passive
ANSWER:A
When the crystal current diode current is large, the bias is …………
A. forward
B. inverse
C. poor
D. reverse
ANSWER:A
A crystal diode is a …………… device
A. non-linear
B. bilateral
C. linear
ANSWER:A
A crystal diode utilises …………….. characteristic for rectification

A. reverse
B. forward
C. forward or reverse
ANSWER:B
When a crystal diode is used as a rectifier, the most important consideration is ………..
A. forward characteristic
B. doping level
C. reverse characteristic
D. PIC rating
ANSWER:D
If the doping level in a crystal diode is increased, the width of depletion layer………..
A. remains the same
B. is decreased
C. in increased
ANSWER:C
A transistor has …………………
A. one pn junction
B. two pn junctions
C. three pn junctions
D. four pn junctions
ANSWER: B
The number of depletion layers in a transistor is …………
A. four
B. three
C. one
D. two
ANSWER: D
The base of a transistor is ………….. doped
A. heavily
B. moderately
C. lightly
ANSWER: C
The element that has the biggest size in a transistor is ………………..
A. collector
B. base
C. emitter
D. collector-base-junction
ANSWER: A
In a pnp transistor, the current carriers are ………….
A. acceptor ions
B. donor ions
C. free electrons
D. holes
ANSWER: D
The collector of a transistor is …………. doped
A. heavily
B. moderately
C. lightly
ANSWER: B
A transistor is a …………… operated device
A. current
B. voltage
C. both voltage and current
ANSWER: A
In a npn transistor, ……………. are the minority carriers
A. free electrons
B. holes
C. donor ions
D. acceptor ions
ANSWER: B
The emitter of a transistor is ………………… doped
A. lightly
B. heavily
C. moderately
ANSWER: B
In a transistor, the base current is about ………….. of emitter current
A. 25%
B. 20%
C. 35 %
D. 5%
ANSWER: D
At the base-emitter junctions of a transistor, one finds ……………
A. a reverse bias
B. a wide depletion layer
C. low resistance
ANSWER: C
The input impedance of a transistor is ………….
A. high
B. low
C. very high
D. almost zero
ANSWER: B
Most of the majority carriers from the emitter ………………..
A. recombine in the base
B. recombine in the emitter
C. pass through the base region to the collector
ANSWER:C
The current IB is …………
A. electron current
B. hole current
C. donor ion current
D. acceptor ion current
ANSWER: A
In a transistor ………………..
A. IC = IE + IB
B. IB = IC + IE
C. IE = IC – IB
D. IE = IC + IB
ANSWER: D
The value of α of a transistor is ……….
A. more than 1
B. less than 1
C. 1
ANSWER: B
Transistor biasing represents ……………. conditions
A. a.c.
B. d.c.
C. both a.c. and d.c.
ANSWER: B
Transistor biasing is done to keep ………… in the circuit
A. Proper direct current
B. Proper alternating current
C. The base current small
D. Collector current small
ANSWER: A
Operating point represents …………..
A. Values of IC and VCE when signal is applied
B. The magnitude of signal
C. Zero signal values of IC and VCE

ANSWER: C
If biasing is not done in an amplifier circuit, it results in ……………
A. Decrease in the base current
B. Unfaithful amplification
C. Excessive collector bias
ANSWER: B
Transistor biasing is generally provided by a …………….
A. Biasing circuit
B. Bias battery
C. Diode
ANSWER: A
For faithful amplification by a transistor circuit, the value of VBE should ………. for a silicon transistor
A. Be zero
B. Be 0.01 V
C. Not fall below 0.7 V
D. Be between 0 V and 0.1 V
ANSWER: C
A JFET has three terminals, namely …………

A. cathode, anode, grid
B. emitter, base, collector
C. source, gate, drain
ANSWER: C
A JFET is similar in operation to …………. valve
A. diode
B. pentode
C. triode
D. tetrode
ANSWER: B
A JFET is also called …………… transistor
A. unipolar
B. bipolar
C. unijunction
ANSWER: A
A JFET is a ………… driven device
A. current
B. voltage
C. both current and voltage

ANSWER: B
The gate of a JFET is ………… biased
A. reverse
B. forward
C. reverse as well as forward
ANSWER: A
The input impedance of a JFET is …………. that of an ordinary transistor
A. equal to
B. less than
C. more than
ANSWER: C
The binary number 10101 is equivalent to decimal number …………..
A. 19
B. 12
C. 27
D. 21
ANSWER: D
The universal gate is ………………
A. NAND gate
B. OR gate
C. AND gate
ANSWER: A
The inverter is ……………
A. NOT gate
B. OR gate
C. AND gate
ANSWER: A
The inputs of a NAND gate are connected together. The resulting circuit is ………….
A. OR gate
B. AND gate
C. NOT gate
ANSWER: C
The NOR gate is OR gate followed by ………………
A. AND gate
B. NAND gate
C. NOT gate
ANSWER: C
The NAND gate is AND gate followed by …………………
A. NOT gate
B. OR gate
C. AND gate
ANSWER: A
Digital circuit can be made by the repeated use of ………………
A. OR gates
B. NOT gates
C. NAND gates
ANSWER: C
The only function of NOT gate is to ……………..
A. Stop signal
B. Invert input signal
C. Act as a universal gate
ANSWER: B
When an input signal 1 is applied to a NOT gate, the output is ………………
A. 0
B. 1
C. Either 0 & 1
ANSWER: A
In Boolean algebra, the bar sign (-) indicates ………………..
A. OR operation
B. AND operation
C. NOT operation
ANSWER: C
The resolution of an n bit DAC with a maximum input of 5 V is 5 mV. The value of n is …….
A. 8
B. 9
C. 10
D. 11
ANSWER: C
2’s complement of binary number 0101 is ………..
A. 1011
B. 1111
C. 1101
D. 1110
ANSWER: A
An OR gate has 4 inputs. One input is high and the other three are low. The output is …….
A. Low
B. High
C. alternately high and low
D. may be high or low depending on relative magnitude of inputs
ANSWER: B
Decimal number 10 is equal to binary number ……………
A. 1110
B. 1010
C. 1001
D. 1000
ANSWER: B
Both OR and AND gates can have only two inputs.
A. True
B. False
ANSWER: B
Which of the following can have positive or negative charge?
A. Electron
B. iron
C. Hole
D. Neutron.
ANSWER: B
Materials having electrical conductivity much less than most of the metals but much greater than that of
typical insulators, are known as
A. thermistors
B. varistors
C. semi-conductors
D. variable resistors.
ANSWER: C
The static resistance R of the diode is given by __________
A. V/I
B. V*I
C. V+I
D. V-I
ANSWER: A
In the volt ampere characteristics of the diode, the slope of the line joining the operating point to the
origin at any point is equal to reciprocal of the _________
A. resistance
B. conductance
C. voltage
D. current
ANSWER: A
A diode will behave as an open circuit if the voltage in the circuit is less than __________
A. cut off voltage

B. saturation voltage
C. leakage voltage
D. threshold voltage
ANSWER: D
What will be the diode resistance if the current in the circuit is zero?
A. 0 ohms
B. 0.7 ohms
C. 0.3 ohms
D. 1 ohms
ANSWER: A
Which of these following is not a characteristic of an ideal diode?
A. Perfect conductor when forward bias
B. Zero voltage across it when forward bias
C. Perfect insulator when reverse bias
D. Zero current through it when forward bias
ANSWER: D
An SCR is made up of silicon because
A. silicon has large leakage current than germanium
B. silicon has small leakage current than germanium
C. silicon has small leakage voltage than germanium
D. silicon has large leakage voltage than germanium
ANSWER: B
An SCR can be used
A. as static conductor
B. for power control
C. for speed control of dc shunt motor
D. all of these
ANSWER: D
A single phase ac - dc converter is also known as
A. rectifier
B. inverter
C. chopper
D. regulator
ANSWER: A
How do fixed resistors usually fail?
A. slowly over time
B. by increasing their value
C. by becoming an open circuit
D. by increasing their value and becoming an open circuit
ANSWER: C
With Ohm's law, if voltage increases and resistance stays the same:
A. current remains the same
B. power decreases
C. current increases
D. resistance decreases
ANSWER: C
Which formula shows a direct proportionality between power and voltage?
A. V = IR
B. P = VI
C. P = IR
D. I = V/R
ANSWER: B
How is a 3.9 komega.gif resistor color-coded?
A. red, white, red, gold
B. red, green, orange, silver
C. orange, white, red, gold
D. orange, green, orange, silver
ANSWER: C
Ohm's law is not:
A. V = IR
B. I = V/R
C. R = IV
D. R = V/I
ANSWER: C
What are the two major categories for resistors?
A. low and high ohmic value
B. commercial and industrial
C. low and high power value
D. fixed and variable
ANSWER: D
How many connections does a potentiometer have?
A. 1
B. 2
C. 3
D. 4
ANSWER: C
The six basic forms of energy are:
A. light, sun, magnetic, chemical, electrical, and mechanical
B. electrical, mechanical, light, heat, magnetic, and chemical
C. electrical, mechanical, sun, heat, chemical, and light
D. potential, sun, light, chemical, electrical, and mechanical
ANSWER: B
With Ohm's law:
A. current is inversely proportional to resistance
B. resistance is directly proportional to voltage
C. voltage is indirectly proportional to power

D. current is directly proportional to resistance
ANSWER: A
Power is defined as:
A. the rate at which energy is used
B. watts
C. energy
D. the rate at which energy is generated
ANSWER: A
What happens to current and resistance if the voltage doubles?
A. Current doubles and resistance doubles.
B. Current doubles and resistance is halved.
C. Current remains the same and resistance doubles.
D. Current doubles and resistance remains the same.
ANSWER: D
Which is the most important step utilized when measuring resistors?
A. use the highest possible scale
B. keep test leads short
C. zero the meter before using
D. remove power from the circuit
ANSWER: D

Electronics ENGLISH

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Electronics ENGLISH

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A semiconductor is formed by ……… bonds.

D. None of the above

A semiconductor has ………… temperature coefficient of resistance.

D. None of the above

The most commonly used semiconductor is ………..

A semiconductor has generally ……………… valence electrons.

The resistivity of pure germanium under standard conditions is about ……….

The resistivity of a pure silicon is about ……………

When a pure semiconductor is heated, its resistance …………..

C. Remains the same

The strength of a semiconductor crystal comes from ……..

B. Forces between protons

D. None of the above

When a pentavalent impurity is added to a pure semiconductor, it becomes ………

Addition of pentavalent impurity to a semiconductor creates many ……..

A pentavalent impurity has ………. Valence electrons

An n-type semiconductor is ………

D. None of the above

A trivalent impurity has ….. valence electrons

Addition of trivalent impurity to a semiconductor creates many ……..

A hole in a semiconductor is defined as …………….

A crystal diode has ………

D. none of the above

A crystal diode has forward resistance of the order of ……………

D. none of the above

C. either forward or reverse

D. none of the above

The forward voltage drop across a silicon diode is about …………………

A crystal diode is used as ……………

The d.c. resistance of a crystal diode is ………….. its a.c. resistance

D. none of the above

D. none of the above

The leakage current in a crystal diode is due to …………….

D. none of the above

A. remains the same

D. none of the above

If the doping level of a crystal diode is increased, the breakdown voltage………….

A. remains the same

D. none of the above

The knee voltage of a crystal diode is approximately equal to ………….

A crystal diode is a …………… device

D. none of the above

A crystal diode utilises …………….. characteristic for rectification

D. none of the above

A. remains the same

D. none of the above

A transistor has …………………

The number of depletion layers in a transistor is …………

The base of a transistor is ………….. doped

D. none of the above

The element that has the biggest size in a transistor is ………………..

In a pnp transistor, the current carriers are ………….

The collector of a transistor is …………. doped

D. none of the above

A transistor is a …………… operated device

C. both voltage and current

D. none of the above

In a npn transistor, ……………. are the minority carriers

D. none of the above

In a transistor, the base current is about ………….. of emitter current

At the base-emitter junctions of a transistor, one finds ……………

B. a wide depletion layer