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    Medium Power Transistor: L KQLT1G Series

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    Stuxnet
    This document provides information on the L2SA1036KQLT1G Series medium power transistor from Leshan Radio Company. Key specifications include a maximum collector current of 500mA, low VCE(sat) for low voltage operation, and RoHS compliance. The transistor is an epitaxial planar type PNP silicon device available in the SOT-23 package in tape and reel formats of either 3000 or 10000 pieces per reel. Electrical characteristics and curves are provided.

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    Medium Power Transistor: L KQLT1G Series

    Uploaded by

    Stuxnet
    11 views4 pages
    This document provides information on the L2SA1036KQLT1G Series medium power transistor from Leshan Radio Company. Key specifications include a maximum collector current of 500mA, low VCE(sat) for low voltage operation, and RoHS compliance. The transistor is an epitaxial planar type PNP silicon device available in the SOT-23 package in tape and reel formats of either 3000 or 10000 pieces per reel. Electrical characteristics and curves are provided.

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    Transistor2021Pag3 (20)

    Original Title

    Transistor2021Pag3 (20)

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    This document provides information on the L2SA1036KQLT1G Series medium power transistor from Leshan Radio Company. Key specifications include a maximum collector current of 500mA, low VCE(sat) for low voltage operation, and RoHS compliance. The transistor is an epitaxial planar type PNP silicon device available in the SOT-23 package in tape and reel formats of either 3000 or 10000 pieces per reel. Electrical characteristics and curves are provided.

    Copyright:

    Public Domain
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    11 views4 pages

    Medium Power Transistor: L KQLT1G Series

    Uploaded by

    Stuxnet
    This document provides information on the L2SA1036KQLT1G Series medium power transistor from Leshan Radio Company. Key specifications include a maximum collector current of 500mA, low VCE(sat) for low voltage operation, and RoHS compliance. The transistor is an epitaxial planar type PNP silicon device available in the SOT-23 package in tape and reel formats of either 3000 or 10000 pieces per reel. Electrical characteristics and curves are provided.

    Copyright:

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    of 4

    LESHAN RADIO COMPANY, LTD.

    Medium Power Transistor


    (32V, 0.5A)

    L2SA1036KQLT1G Series
    L2SA1036KQLT1G Series
    Features
    3
    1) Large IC.
    ICMax. = 500mA
    2) Low VCE(sat). Ideal for low-voltage 1
    operation.
    2
    3) We declare that the material of product
    compliance with RoHS requirements.
    SOT– 23
    Structure
    Epitaxial planar type
    PNP silicon transistor
    3

    FDEVICE MARKING
    1
    1) L2SA1036KQLT1G=HQ

    2) L2SA1036KRLT1G=HR
    2

    PNP
    FAbsolute maximum ratings (Ta = 25_C)

    ORDERING INFORMATION

    Device Package Shipping


    L2SA1036K*LT1G SOT-23 3000/Tape & Reel
    L2SA1036K*LT3G SOT-23 10000/Tape & Reel

    Rev.O 1/4
    LESHAN RADIO COMPANY, LTD.

    L 2SA1036KQLT1G Series

    FElectrical characteristics (Ta = 25_C)


    Parameter Symbol Min. Typ. Max. Unit Conditions
    Collector-base breakdown voltage BVCBO — 40 — — V IC= — 100µA
    Collector-emitter breakdown voltage BVCEO — 32 — — V Ic= — 1mA
    Emitter-base breakdown voltage BVEBO — 5 — — V IE= — 100µA
    Collector cutoff current ICBO — — — 1 µA VCB= — 20v
    Emitter cutoff current IEBO — — — 1 µA VEB= — 4V
    Collector-emitter saturation voltage VCE(sat) — — — 0.4 V IC/IB= — 100mA/ — 10mA
    DC current transfer ration hFE 120 — 390 — VCE= — 3V,Ic= — 10mA
    Transition frequence fT — 200 — MHZ VCE= — 5V,IE=20mA,f=100MHz
    Output capacitance Cob — 7 — pF VCB= — 10V,IE=0A,f=1MHz

    hFE values are classified as follows.

    Item Q R
    Hfe 120~270 180~390

    Rev.O 2/4
    LESHAN RADIO COMPANY, LTD.

    L 2SA1036KQLT1G Series
    Electrical characteristic curves

    Rev.O 3/4
    LESHAN RADIO COMPANY, LTD.

    L 2SA1036KQLT1G Series

    SOT-23

    NOTES:
    A 1. DIMENSIONING AND TOLERANCING PER ANSI
    L
    Y14.5M, 1982.

    3 2. CONTROLLING DIMENSION: INCH.


    B S
    1 2 INCHES MILLIMETERS
    DIM
    MIN MAX MIN MAX
    V G A 0.1102 0.1197 2.80 3.04
    B 0.0472 0.0551 1.20 1.40
    C 0.0350 0.0440 0.89 1.11
    D 0.0150 0.0200 0.37 0.50
    G 0.0701 0.0807 1.78 2.04
    C H 0.0005 0.0040 0.013 0.100
    J 0.0034 0.0070 0.085 0.177
    D H J K 0.0140 0.0285 0.35 0.69
    K
    L 0.0350 0.0401 0.89 1.02
    S 0.0830 0.1039 2.10 2.64
    V 0.0177 0.0236 0.45 0.60

    PIN 1. BASE
    2. EMITTER
    3. COLLECTOR

    0.037
    0.037 0.95
    0.95

    0.079
    2.0

    0.035
    0.9

    0.031 inches
    0.8 mm

    Rev.O 4/4

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