Absolute Maximum Ratings Values SEMITRANS® M

Symbol Conditions 1) Units Power MOSFET Modules

VDS 500 V
VDGR RGE = 20 kΩ 500 V SKM 151 A4R
ID Tc = 25 / 80 °C 70 / 50 A
IDM Tc = 25 / 80 °C 280 / 200 A Preliminary Data
VGS ± 20 V
PD 780 W
Tj, (Tstg) –40 ... +150 (125) °C
Visol AC, 1 min. 2 500 V
humidity DIN 40 040 Class F
climate DIN IEC 68 T.1 40/125/56
Inverse Diode
IF = –ID Tc = 25 / 80°C 70 / 50 A
IFM = –IDM Tc = 25 / 80°C 280 / 200 A

SEMITRANS M1
Characteristics
Symbol Conditions 1) min. typ. max. Units
V(BR)DSS VGS = 0, ID = 0,25 mA 500 – – V
VGS(th) VGS = VDS, ID = 1 mA 2,1 3,0 4,0 V
IDSS VGS = 0 Tj = 25 °C – 1 250 µA
VDS = 500 V Tj = 125 °C – 300 1000 µA
IGSS VGS = 20 V, VDS = 0 – 10 100 nA
RDS(on) VGS = 10 V, ID = 50 A – 50 70 mΩ
gfs VDS = 25 V, ID = 50 A 48 90 – S
Features
CCHC – – 160 pF
• N Channel, enhancement mode
Ciss VGS = 0 – 15 20 nF
Coss VDS = 25 V – 1,9 2,9 nF • Short internal connections avoid
Crss f = 1 MHz – 0,72 1,1 nF oscillations
LDS – – 30 nH • With built-in gate resistor chips
td(on) VDD = 250 V – 60 – ns (“R”) Rgtotal = 1,3 Ω
tr ID = 30 A – 100 – ns • Without hard mould
td(off) VGS = 10 V – 500 – ns (environmental aspects)
tf RG = 4,7Ω – 120 – ns • Isolated copper baseplate using
Inverse Diode DCB Direct Copper Bonding
Ceramic
VSD IF = 120 A, VGS = 0 V – 1,0 1,4 V
trr Tj = 25 °C 2) – 450 – ns • All electrical connections on top
Tj = 150 °C 2) – – – ns for easy busbaring
Qrr Tj = 25 °C 2) – 36 – µC • Large clearance (10 mm) and
Tj = 150 °C 2) – – creepage distances (13 mm)
Thermal characteristics • UL recognized, file no. E63 532
Rthjc – – 0,16 °C/W
Typical Applications
Rthch M1, surface 10 µm – – 0,05 °C/W
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• Switched mode power supplies

• DC servo and robot drives
Mechanical Data • DC choppers
M1 to heatsink, SI Units 4 – 6 Nm • Resonant and welding inverters
to heatsink, US Units 35 – 53 lb.in. • AC motor drives
M2 for terminals, SI Units 2,5 – 3,5 Nm • Laser power supplies
for terminals, US Units 22 – 24 lb.in.
• UPS equipment
a – – 5x9,81 m/s2
• Not suitable for linear
w – – 150 g
amplification
Case page 5 D15
1)
Tcase = 25 °C, unless otherwise specified This is an electrostatic dischar-
2) IF = – ID, VR = 100 V, –diF/dt = 100 A/µs
ge sensitive device (ESDS).
Do not parallel with former SKM 151 or SKM 151F
Please observe the international
(which are discontinued) standard IEC 747-1, Chapter IX.
SKM 151 A4R can replace SKM 151, former SKM 151 R and SKM 151 AR

© by SEMIKRON 0599 1
SKM 151 A4R

M151A 4R .X LS-1 M151A 4R .X LS-2

800 1000
A
W

600
tp=10µs
100
100µs

400
1ms

10
10ms
200

RDSon=VDS/ID 100ms
ID
PD
0 1
0 TCase 40 80 120 °C 160 10 VDS 100 1000 V 10000

Fig. 1 Rated power dissipation vs. temperature Fig. 2 Maximum safe operating area

M151A 4R .X LS-3 M151A 4R .X LS-4

180 90
A VCE=20V A
160 10V 80
5,5V

140 70

120 60
5,0V
100 50

80 40
Ptot =780W
60 4,5V 30

40 20
4,0V
ID 20 10
ID
0 0
0 VDS
4 8 12 16 20 24 V 28 0 VGS 2 4 6 8 V 10

Fig. 3 Output characteristic Fig. 4 Transfer characteristic

M151A 4R .X LS-6
M151A 4R .X LS-5
300 80
mΩ A
I=50A 70
250 VGS=10V
60

200
50

150 40
98%

30
100
typ. 20

50
10
RDS(on) ID
0 0
0 40 80 120 °C 160 0 TCase 40 80 120 °C 160
TJ

Fig. 5 On-resistance vs. temperature Fig. 6 Rated current vs. temperature

2 0599 © by SEMIKRON
 M151AR.XLS-7 M151A R .X LS-8

580 600
V V
560 500

540 400

520 300

500 200

480 100
V(BR)DSS
VDS
460 0
-50 T-25
J 0 25 50 75 100 125
°C 150 0 -di/dt 4 8 12 16 A/ns 20

Fig. 7 Breakdown voltage vs. temperature Fig. 8 Drain-source voltage derating

M151A 4R .X LS-9 M151A 4R .X LS-10

100 16
nF V
ID=65A
14

Ciss 12
10 VDS=100V
10

VDS=400V
Coss 8

6
1
4
Crss

C VGS
2

0,1 0
0 VDS 10 20 30 V 40 0 200
Qgls 400 600 800 nC
1000 1200 1400

Fig. 9 Capacitances vs. drain-source voltage Fig. 10 Gate charge characteristic

M151A R .X LS-11
1000
I:\MARKETIN\FRAMEDAT\datbl\B05-mos\SKM151A4R.fm

100

10
Tj= 25°C typ
Tj=150°C typ
Tj= 25°C (98%)
1 Tj=150°C (98%)

IF

0,1
0 V0,4
SD 0,8 1,2 1,6 2 V
2,4 2,8

Fig. 11 Diode forward characteristic

© by SEMIKRON 0599 3
SKM 151 A4R

M151A R .X LS-14
5

4 98%

3 typ.

2%
2

VDS=VGS
1 ID =1mA

VGS(th)

0
-50 Tj 0 50 100 °C 150

Fig. 14 Gate-source threshold voltage

M151A 4R .X LS-52
0,25
°C/W Zthjh

0,2

0,15
Zthjc

0,1

0,05
Zthjcp

0
0,00001 0,0001 0,001 0,01 0,1 s 1
tp

Fig. 51 Transient thermal impedance

M151A 4R .X LS-52
1
°C/W

0,1

0,01 D=
1
0,5
0,2
0,001 0,1
single pulse 0,05
Zthjc 0,02
0,01
0,0001
0,00001 0,0001 0,001 0,01 0,1 1
tp s

Fig. 52 Thermal impedance under pulse conditions

4 0599 © by SEMIKRON
 SKM 151 A4R

SEMITRANS M 1 UL recognized, file No. E63 5632

Case D 15

SKM 151 A4R

Outline and circuit diagram

I:\MARKETIN\FRAMEDAT\datbl\B05-mos\SKM151A4R.fm

© by SEMIKRON 0599 5