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Chapter 9 Frequency Response of BJT & Mosfet
Chapter 9 Frequency Response of BJT & Mosfet
And MOFET
1 Introduction
Response of an amplifier to different frequency components of input signal is called frequency
response of the amplifier. If input of an amplifier is sinusoidal signal, vin = Vm sin(wt + φ) and gain
of amplifier is Av = A∠q then output signal amplifier becomes,
vo = AVm sin (wt + φ + θ)
The amplitude of output of amplifier depends as gain of amplifier & amplitude of input signal and
phase angle of output depends on phase of input and phase angle of gain of amplifier. The frequency
characteristics of an amplifier can be split in three regions called mid band, low frequency and
high frequency. The mid band frequency region is frequency range of input signal for which gain
of amplifier fairly remains constant. In low frequency region below mid band region, the gain of
amplifier may decrease with decrease in frequency and amplifier may act as high pass circuit. In this
region gain decreases with decrease in frequency and reaches zero at f = 0. At low frequency, the
gain of amplifier is limited by coupling and bypass capacitances of the amplifier. The third region is
high frequency region above the mid band region where gain reduces with increase in frequency. In
sigh frequency region, an amplifier acts like a low pass filter. The gain of amplifier in high frequency
region is limited by parasitic or junction capacitance of the device i.e. BJT or MOSFET. The amplifier
response discussed so far is essentially small signal low frequency response where amplitude of input
signal is very low in comparison of biasing signals of the amplifier. The analysis mainly focused on
mid-band frequencies. The frequency range of an amplifier used to amplify a video signal is totally
different from frequency range of amplifier used for amplification of audio signals. Similarly, if an
amplifier is used to amplify a signal at power frequency (i.e. 50 Hz) then its response is different
from an amplifier used to amplify a radio frequency signal. The amplification of a signal by an
amplifier depends on many factors like amplitude of signal, frequency range of input signal, the
characteristic of active device (r.e. BJT or FET) and external circuit components including biasing
signals. Analysis of amplifier discussed so for ignored the effect of different capacitances of BJT and
parameters of amplifier circuits. This chapter presents the effect of internal capacitances as well as circuit
capacitances on response of the FET and BJT amplifiers. The voltage gain, current gain and power gain
will be considered in decibel in order to caver wide range of frequencies and large variations.
Vo
v,dB = 20log10 A v = 20log10
(i) Voltage gain in dB, A (1)
Vin
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Frequency Response EDC & ANALOG ELECTRONICS [2]
Io
(ii) Current gain in dB, Ai,dB = 20log10 A i = 20log10 (2)
Iin
Vo Io V I
⇒ AP, dB = 20log
= 10 20log10 o + 20log10 o (5)
Vin Iin Vin Iin
⇒ AP, dB = Av, dB + Ai,dB (6)
Note : i. Power gain is product of voltage gain and current gain but on dB scale power gain is sum of
voltage gain in dB and current gain in dB.
ii. In case of a RC coupled amplifier gain at low frequencies is decreased due to coupling and
bypass capacitors and at high frequencies it is decreased due to internal parasitic capacitances
and frequency dependence of gain. The frequency response of RC coupled amplifier is shown in
Fig. 1.
Av
Av, mid
0.707 Av, mid
mid band
(bandwidth)
h fv f(log scale)
Av
Av, mid
0.707 Av, mid
mid band
(bandwidth)
fL fv
f(log scale)
Fig. 2 Frequency response of transforms coupling amplifier
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Frequency Response EDC & ANALOG ELECTRONICS [3]
iv. In of case of a direct coupled amplifier with no coupling and bypass capacitors the low frequency
response is almost flat and same as midband but gain at high frequencies decreases due to para-
sited internal capacitance of the device. The frequency response of direct coupled amplifier is
shown in Fig. 3.
Av
Av, mid
0.707 Av, mid
bandwidth
fv f(log scale)
Fig.3 Frequency response of direct coupling amplifier
Therefore, the effect of coupling and bypass capacitors cannot be ignored at low frequencies .
Similarly the response of the amplifier is limited by internal parasitic capacitances and frequency
dependence of gain of BJT and FET.
Cut-Off Frequency :
1
The frequencies at which the gain of amplifier falls to or 0.707 times of the mid band gain are
2
called cut-off frequencies of the amplifier. The output power at cut off frequencies become half of
output power at midband, so, cutoff frequencies are also called half power frequencies. At cut off
frequency gain of amplifiers falls by 3dB = 20log 1 .
2
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Frequency Response EDC & ANALOG ELECTRONICS [4]
phase
270°
180°
fL fH f
Fig.4 Phase Vs frequency response of common emitter BJT or common source FET amplifier
+ +
vi R vo
– –
Vo 1 1 1
= = = (9)
Vi 1 w 2π f L
1+ 1- j L 1- j
jw RC w 2π f
Vo 1
⇒ = (10)
Vi fL
1- j
f
1
Where fL = (11)
2π RC
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Frequency Response EDC & ANALOG ELECTRONICS [5]
Vo 1
At f = fL, = and ∠(Vo / Vi ) = 45o (14)
Vi 2
The variation in gain or voltage ratio of high pass RC circuit with frequency of input signal is shown
in Fig. 6.
Vo
Vi
1
1
2
fL
f
Fig. 6 Frequency response of high RC circuit
3. Low Frequency Response of BJT Amplifier
Consider potential divider bias common emitter BJT amplifier shown in Fig. 7.
+VCC
RC
R1
Vo
Cci Cco
RS
R2
VS ~ RE 1 k C1
Cci
ib
+ +
RS
RD Ro RL
Vi R1 R2 r ro Vo
Ri ib
VS +
–
– –
BJT amplifier
1
Where Xci = (18)
jw Cci
Output voltage of amplifier,
Vo = Avo Vi (19)
Vo
Where Avo = = Voltage gain neglecting Rs & Cci (20)
Vi
b ( ro || R D )
Here Avo = (21)
rπ
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Frequency Response EDC & ANALOG ELECTRONICS [7]
Ri
⇒ Vo = A vo ⋅ (22)
R i + R s - jX ci
V A vo R i A vo R i
⇒ =
Avs = o = (23)
Vs R i + R s - jX ci X ci
( R i + R s ) 1 - j
Ri + Rs
The combination of source resistance (Rs) and input resistance (Ri) of amplifier forms a high pass RC
circuit as shown in Fig. 9.
Total resistance of RC circuit on input side of amplifier will be,
R = Rs + Ri (24)
The lower cutoff frequency in terms of Cci can be given by,
1 1
fLi = = (25)
2π RCci 2π ( R s + R i ) Cci
Cci
Ro
+ +
RS
Ri + Vo
+ Vi – AV
v i –
VS ~ –
–
+ +
Ri + AV
V1 – v i
Ro RL Vo
– –
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Frequency Response EDC & ANALOG ELECTRONICS [8]
The resistance seen across terminals of capacitor Cco, R = Ro + RL (26)
The lower cutoff frequency of the amplifier in terms of Cco becomes
1 1
fLo = = (27)
R Cco 2π ( R o + R L ) Cco
Re
RE CE
Amplifier
Fig. 11 BJT amplifier with emitter bypass capacitor behaving as
low pass RC circuit
Where Req is total resistance seen across terminals of CE. Mathematically, Re is given by
B
Rs
R2 R1 r E
RE Req CE
R || R1 || R 2 + rπ
R e = R E || s (30)
1+ b
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Frequency Response EDC & ANALOG ELECTRONICS [9]
Note : Here, the resistance of base circuit when seen from emitter side is reduced by a factor of (1 + b).
Similarly, when resistance of emitter circuit is seen from base side, it is increased by a factor of (1 +
b) So, resistance RE appears as resistance (1 + b) RE on input side of the circuit.
Note : i. Cci Cco and CE have effect on lower cutoff frequency only.
ii. The largest of lower cutoff frequencies, due to Cci and Cco and CE , is called dominant frequency.
iii. The dominant frequency is overall lower cutoff frequency of the amplifier.
iv. At high frequencies the reactances offered by coupling & bypass capacitance are negligible and
these capacitors can be replaced by short circuit.
Example 1
Common Data for Questions (i) and (ii) :
Consider the common emitter amplifier shown below with the following circuit parameters :
β = 100, gm = 0.3861 A/V, ro = ∞, rπ = 259 Ω, Rs =1 kΩ, RB = 93 kΩ, RC = 250 Ω, RL = 1kΩ, C1 = ∞
and C2 = 4.7 µF.
+10 V
RB RC
C2
Rs C1 +
+ Vo RL
Vs
–
~ –
(i) Ans.(b)
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Frequency Response EDC & ANALOG ELECTRONICS [10]
+10 V
RB RC
C2
Rs C1 +
+ Vo
Vs – RL
– ~
3 93 × 103 × 259
⇒ Ri = 1 × 10 + = 1258 Ω
93 × 103 + 259
(ii) Ans.(b)
+10 V
RB RC
C2
Rs C1 +
+ Vo
RL
Vs
– ~ –
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Frequency Response EDC & ANALOG ELECTRONICS [11]
1
fL =
2πCC (R L + R o )
Where, Ro = Rc || ro
Given, ro = ∞ , CC = C2 = 4.7 µF and RL = 1 KΩ
∴ Ro = Rc = 250 Ω
1
⇒ fL =
2πC2 (R L + R C )
1
⇒ fL = -6
2π × 4.7 × 10 (1000 + 250)
⇒ fL = 27.09 Hz
+VDD
RD
Cco
vo
Cci
RL
Rsig
vS ~ RG
RS Cs
VSS
The lower cutoff frequency of the amplifier in terms of Cci is given by,
1
fLci = (31)
2π ( R sig + R i ) Cci
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Frequency Response EDC & ANALOG ELECTRONICS [12]
Rsig Cci G D
+ +
+ vgs gmvgs
vS ~ RG ro RD Ro RL
vo
– Ri –
S
–
Amplifier RL
Ro
Fig. 15 MOSFET amplifier with output coupling capacitor behaving as
low pass RC circuit on output side
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Frequency Response EDC & ANALOG ELECTRONICS [13]
Amplifier Cs
Rs
Where R′s is effective resistance seen across terminals of Cs. The resistance R′s can be determined
from AC equivalent circuit of the amplifier.
Note : i. Highest of lower cutoff frequencies fLci, fLco and fLcs , determines the over all lower cutoff frequency
and it is called dominant pole or frequency of the amplifier.
ii. At high frequencies the reactances offered by coupling and bypass capacitors become very small
and capacitors behave like short circuit. So, the effect of coupling and bypass capacitors can be
neglected at high frequencies.
Example 2
The ac schematic of an NMOS common source stage is shown in the figure below, where part of the
biasing circuit has been omitted for simplicity. For the n-channel MOSFET M, the transconductance
gm = 1 mA/V and body effect and channel length modulation effect are to be neglected. The lower
cutoff frequency in Hz of the circuit is approximately at
RD C
10 k 1 µF
Vo
Vi
M RL
10 k
(a) 8 (b) 32
(c) 50 (d) 200
GATE(EC/2013/2M)
Solution : Ans.(a)
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Frequency Response EDC & ANALOG ELECTRONICS [14]
RD = 10 k
Vout
G D C=1µF
Vi RL = 10 k
S
5. Miller Effect
Consider an amplifier with a feed back impedance ,Zf, is connected between input and output
terminals as show in Fig. 17.
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Frequency Response EDC & ANALOG ELECTRONICS [15]
Zf
If
Iin Ii Io Io
+ A Vo +
Av B
Vin Vin Vo
Zif Zi Zo Zof
– –
Amplifier
Vo
1-
1 Vin 1
⇒ = + (38)
Zif Zf Zi
1 1 - Av 1
⇒ = + (39)
Zif Zf Zi
1 1 1
⇒ = + (40)
Zif Zf Zi
1 - Av
Zf
⇒ Zif = || Zi (41)
1 - Av
Zf
Thus, the feedback impedance appears as when it is seen from input terminals.
1 - Av
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Frequency Response EDC & ANALOG ELECTRONICS [16]
V
1 - in
1 Vo 1
⇒ = + (44)
Zof Zf Zo
1
1-
1 Av 1
⇒ = + (45)
Zof Zf Zo
1 1 1
⇒ = + (46)
Zof Z f Zo
1
1-
Av
1 Z
⇒ = Zo || f (47)
Zof 1- 1
Av
Zf
Thus, the feedback impedance appears as in parallel to output impedance of amplifier when
1
1-
Av
it is seen from the output terminals of the amplifier.
It is observed from above two cases that an impedance Zf connected in feedback arrangement of
Zf
amplifier can be transferred an as shunt impedance of value on input terminals and as a shunt
1 - Av
impedance of value on output terminals as shown in Fig.18 Where Av is voltage gain of
+
+
Cof 1
Vi (1–Av)Cf Cif Amplifier 1 C f Vo
A v
–
–
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Frequency Response EDC & ANALOG ELECTRONICS [17]
decreased reactances offered by these capacitors. However, the effect of small parasitic or inter
electrode capacitances become predominant. Consider an amplifier in which parasitic capacitances
(Cf) appear in feedback path between input and output terminals as shown in Fig.19.
Cf
+ +
Vi Amplifier Vo
– –
The Miller Effect can be used to study effect of the parasite capacitance appearing between input and
output terminals. A
ccording to millers effect, feedback impedance transfered to input side is given
by,
Z
Zif = f (48)
1 - Av
1 1
For capacitive elements, Zf = and Zif = (49)
jw C f jwCif
1 1
∴ = (50)
jw Cif jw Ci (1 - A v )
⇒ Cif= (1 - A v ) Ci (51)
The capacitance CIF is called Millers capacitance and it is also represented by CM.
Similarly, th feedback impedance transfered to output terminals is given by,
Zf
Zof = (52)
1
1-
Av
1 1
⇒ = (53)
jw Cof 1
jw C f 1 -
Av
1
⇒ Cof = Cf 1 - (54)
Av
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Frequency Response EDC & ANALOG ELECTRONICS [18]
5.2 Dual of Miller Theorem :
According to dual of miller theorem an impedance, Zf, connected in shunt branch series feedback
arrangement of amplifier can be transferred as series impedance of value (1 – Ai)Zf , on input terminals
1
and as a series impedance of value 1 - Zf on output terminals as shown in Fig.20. Where Ai
Ai
represents current gain of the amplifier without feedback.
1
1 Zf
(1 – Ai)Zf Ai
1 2
+ Amplifier + + 1 2 +
3 3
Vi Vo Vi Vo
Zf
– – – –
+ 1 +
Vi Vo
j C
– –
Where, wH = 2π fH (57)
1
and fH = = higher cutoff frequency of the circuit. (58)
2π RC
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Frequency Response EDC & ANALOG ELECTRONICS [19]
Vo 1
Magnitude, = (59)
Vi f
2
1+
fH
V -1 f
Phase angle, ∠ o = - tan (60)
Vi fH
The magnitude Vs frequency curve or frequency reponse of low pass RC circuit can be drawn as
shown in Fig.22.
|Av|
1
1
2
f f
H
Fig. 22 Frequency response of low pass RC circuit.
Vo 1
At f= fH, = (61)
Vi 2
The magnitude in dB at f = fH,
Vo 1
= 20log10 = -3 dB
Vi dB 2
Note : The magnitude of transfer function of low pass filter becomes -3dB at cutoff frequency due to which
cutoff frequency is some times called as 3dB cut off frequency.
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Frequency Response EDC & ANALOG ELECTRONICS [20]
gbc
rbb C
B
Cc
+ +
vbe
Vbe rbe gmvbe gce RL Vce
Ce
–
–
Note : i. All the parameters of hybrid π-model can be determined using h-parameters of BJT
ii. Hybrid-π model is applicable for frequencies upto proximately fT/3. Where fT is unity gain
frequency.
The transconductance in terms of gains of BJT and DC bias collector current is given by,
α b IC
gm = = = (63)
re rπ VT
Where, VT is thermal voltage. The thermal voltage at any temperature T (in Kelvin) is given by,
T
VT = (64)
11600
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Frequency Response EDC & ANALOG ELECTRONICS [21]
⇒ h fe = g m rb′e (67)
1 gm IC
⇒ g=
b′e = = (68)
rb′e h fe h fe VT
Note : The resistance rb′e is directly proportional to temperature and inversely proportional to collector bias
current.
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Frequency Response EDC & ANALOG ELECTRONICS [22]
in base region of pnp transistor varies almost linearly in the base region as shown in Fig. 24.
B
E P N P C
p(x)
p(0)
x=0 x=W x
Fig. 24 Variation of holes concentration in base region of pnp transistor
For linear decrease in minority carrier concentration, the average concentration of excess minority
carriers stored in base region is p′(0)/2. If A is cross section of emitter
function, W is width of base region then charge of excess minority carriers stored in base region can
be given by,
p′(0)
QB = AW × × q (75)
2
The diffusion current in base region due to minority carriers holes in base region of pnp transistor can
be given by,
dp p′(0) - 0 p′(0)
I = - Aq D pB ⋅ - Aq D pB ⋅
= =AqD pB ⋅ (76)
dx 0-W W
Where DpB is diffusion constant of holes in the base region. The current I is almost equal to emitter
current of BJT.
W IE
⇒ p′(0) = (77)
Aq D pB
IE W 2
QB = (78)
2D pB
The static emitter diffusion capacitance due to rate of change of excess minority carrier in base
region can be given by,
d QB W 2 d IE
CDe = = ⋅ (79)
dVBE 2D pB d VBE
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Frequency Response EDC & ANALOG ELECTRONICS [23]
d IE 1 I
For BJT, = = E (80)
d VBE re VT
W 2 IE W2 1
∴ CDe= ⋅ = ⋅ (81)
2D pB VT 2D pB re
W2
∴ CDe = g m (83)
2D pB
Cje =
eA (84)
We
Where We is width of emitter junction. The width of forward biased emitter junction can be given by,
2e 1 1
We = ⋅ + ( Voe - VBE ) (85)
q ND NA
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Frequency Response EDC & ANALOG ELECTRONICS [24]
eA
Cc = (86)
Wc
Where Wc is width of reverse biased collector junction. The width of reverse biased collector junction is
given by
2e 1 1
Wc = + ( Voc + VCB ) (87)
q NA ND
Where VCB is reverse biased collector junction voltage and Voc is built in potential of collection
junction.
Note : i. Typical value Hybrid parameters and their variations with IC, VCE and Temperature (T) of
Cbc
rbb
b gbc c
b
Iin +
gbVbe
Cbe gbe gce IL
Vbe
_
e e
Fig. 25 High frequency equivalent circuit with output short circuited
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Frequency Response EDC & ANALOG ELECTRONICS [25]
Above circuit can be redrawn as under,
rbb Iin
b
b c
+
e – e
Fig. 26 Simplified high frequency equivalent circuit with output short circuited
Since collector junction is reversed biased, rb′c is large and gb′c is negligible.
- gm
⇒ AIs = (93)
gb′e + jw(Cc + Ce )
gm
From equation (68), gb′e = (94)
h fe
- h fe
⇒ AIs = (95)
jw(Cc + Ce )
1+ h fe
gm
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Frequency Response EDC & ANALOG ELECTRONICS [26]
- h fe
⇒ AIs = (96)
jw
1+
wb
gm
where, ωb = (97)
h fe (Cc + Ce )
gm
⇒ fb = (98)
2π h fe (Cc + Ce )
f T h fe fb ≈ bfb
⇒ = (104)
Here the frequencies up to fβ represent bandwidth of the amplifier and because of above relation fT is
represents the short circuit current gain-bandwidth product of the amplifier.
gm
⇒ fT = h fe × (105)
2π h fe (Cc + Ce )
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Frequency Response EDC & ANALOG ELECTRONICS [27]
gm
⇒ f T = (106)
2π(Cc + Ce )
2
f
At low frequencies, f = fβ, 1 + ≈ 2 | AI | = hfe / 2 and |AI|dB = 20 log hfe - 3dB (111)
fb
2 2
f f
At very high frequencies, f >> fβ, 1 + ≈ (112)
fb fb
h fe fb
∴ |AIs| ≈ and |AI|dB = 20 log hfefb - 20 log f (113)
f
Using above relations, the gain (dB) vs. frequency (log f) can be drawn as shown in Fig.27.
|AI|dB
3 dB
20 log hfe
60
20 dB/dec
log f
log f log fT
Fig. 27 Current gain Vs frequency plot of short circuit CE amplifier
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Frequency Response EDC & ANALOG ELECTRONICS [28]
Experimental Measurement of fT :
2 2
f f
At very high frequencies, f >> fβ, 1 + ≈ (114)
fb fb
h fe fb
∴ |AIs| ≈ (115)
f
IC (mA)
Fig. 28 Variation of parameter fT with collector current
Note : i. BJT behaves like low pass filter at high frequencies and high pass filter at low frequencies.
ii. In RC coupled amplifier the Low frequency response of BJT is limited by coupling capacitors
and bypass capacitors, in transformer coupled amplifiers it is limited by transformer turn to turn
capacitance.
iii. Direct coupled amplifier has good low frequency response than RC coupled and transformer
coupled amplifiers. It can amplify very low frequency signals.
iv. High frequency response of BJT amplifiers is limited by junction and parasitic capacitances.
v. For low frequency or small signal analysis, the coupling and bypass capacitors are included in
the circuit and junction and parasitic capacitances are open circuited.
vi. For high frequency analysis, the coupling and bypass capacitors are replaced by short circuit
and junction and parasitic capacitances are included into circuit.
vii. At mid band frequencies the coupling and bypass capacitors are replaced by short circuit and
junction and parasitic capacitances are replaced by open circuit.
Note : High frequency response of BJT can be impoved by adopting non-uniform doping or graded doping
profile in base of BJT in stead of uniform doping. The transistor with uniform base doping is
called diffusion transistor and transistor with graded or non-uniform base doping is called graded
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Frequency Response EDC & ANALOG ELECTRONICS [29]
transistor. The graded base BJTs exhibit better high frequency response characteristic as compared
to their uniform base counterparts because there exists a built-in electric field in the base region
of the graded base BJT gives additional drift velocity to minority carries in base reason resulting
reduction of switching time and hence giving better high frequency response.
Example 3
An npn transistor has a beta cutoff frequency fβ of 1 MHz, and common emitter short circuit
low-frequency current gain β0 of 200. It unity gain frequency fT and the alpha cutoff frequency
fα respectively are
(a) 200 MHz, 201 MHz (b) 200 MHz, 199MHz
(c) 199 MHz, 200 MHz (d) 201 MHz, 200 MHz
GATE(EC/1996/2M)
Solution : Ans.(a)
The unity gain frequency in terms of β-cutoff frequency is given by
f T = hfe fβ = βfβ
fβ = β-cutoff frequency of amplifier.
Given, β = 200, fβ = 1MH
⇒ f T = 200 × 1 = 200 MHz
The alpha cutoff frequency of BJT is given by,
fβ = (1–α) fα
fb
fα =
1- α
b
where, α =
1+ b
⇒ fα = (1+ β) fβ
⇒ fα = (1 + 200) × 1 MHz
⇒ fα = 201 MHz
Example 4
An npn transistor (with Cπ = 0.3 pF) has a unity - gain cutoff frequency fT of 400 MHz at a dc bias
current Ic = 1mA. The value of its Cµ (in pF) is approximately (VT = 26 mV)
(a) 15 (b) 30
(c) 50 (d) 96
GATE(EC/1999/2M)
Solution : Ans.(a)
The unity gain frequency of CE mode BJT amplifier is given by,
gm
fT =
2π(Cπ + Cµ )
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Frequency Response EDC & ANALOG ELECTRONICS [30]
Ic
where, gm = & |VT| is thermal voltage
| VT |
1
⇒ fT =
2πVT (0.3 × 10-12 + Cm )
1
⇒ 400×106 =
2π × 26(0.3 × 10-12 + Cm )
1
⇒ Cµ = - 0.3 × 10-12 =15 pF
2π × 26 × 400 × 106
rbb
b b
Cc
+ +
gm vbe
gbe Ce gce RL Vce
Vbe
– –
e e
Fig. 29 High frequency model of CE BJT amplifier with resistive load
The conductance gb′c and capacitance Cc from feedback path can be transferred to input and output
terminals by using Mitter’s Theorem as under,
1
gb′ci = (1 - A v ) g b′c and g b′co =
1 - g b′c (119)
Av
1
C ci = (1 - A v )Cc and Cco =
1 - Cc (120)
Av
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Frequency Response EDC & ANALOG ELECTRONICS [31]
Vce
Where Av = (121)
Vb′e
The alternate circuit of the amplifier with conductances and capacitances transferred to input and
output terminals of the amplifier can be drawn as shown in Fig. 30.
gce gbco
Vbe gbci gbe Cci Ce Cco RL Vce
gm vbe
Fig. 30 Simplified high frequency model of CE BJT amplifier with resistive load
Above circuit has two high pass RC circuits. The overall transfer function of the amplifier has two
poles. One belong to on input circuit and another for output circuit. So, the circuit of amplifier has
two times constants corresponding to input and output circuits of the amplifier.
The time constant of RC circuit on input side can be given by,
ti = ReqCeq (122)
1 1
Where Req = (123)
g b′e (1 - A v ) g b′c
1
∴ Req = (125)
g b′e
Vce
then, Av = = -g m R L (128)
Vb′e
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Frequency Response EDC & ANALOG ELECTRONICS [32]
1 1
Where, Req = R L (131)
g ce 1
1 - g b′c
A v
As collector junction is reverse biased and emitter junction is forward biased so rb′c >> rb′e
∴ gb′c << gb′e
As gb′c is very small so Req is small and to is negligible.
The larger time constant of the circuit plays the dominant role as the time constant of input circuit
is larger so it gives overall time constant of the amplifier. So, the overall cutoff frequency of the
amplifier is determined by the input circuit.
Note : i. When transfer function of a high frequency equivalent of an amplifier has multiple poles then
pole with lowest cutoff frequency is dominant pole and gives overall cutoff frequency and time
constant of the amplifier. Time constant is inverse of cutoff frequency so lowest cutoff frequency
gives largest time constant of the amplifier.
ii. When high frequency voltage transfer ratio of amplifier has multiple time constants then larger
time constant determine. Thus the pole corresponding to largest constant in high frequency
resonance is dominant pole.
iii. The upper cutoff frequency is given by
1
fH =
2π t
Where εox is dielectric constant of oxide and tox is thickness of oxide layer.
The gate capacitive offed can be modeled by three capacitances called gate-to-source (Cgs), gate-to-
drain (Cgd) and gate to body (Cgb). These capacitances can be deterined as under,
i. Triode or Ohmic region
The channel has uniform depth across length of the channel when MOSFET operates triode
region with small vDS . If W is width of channel and L is length of channel then gate-channel
capacitance is WLCox. This capacitance can be modeled by dividing equality between drain and
source.
1
∴ Cgs = Cgd = WL Cox (133)
2
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Frequency Response EDC & ANALOG ELECTRONICS [34]
In this case Cgd is assumed to be zero.
S D
G
S L D
Lov Lox
Where ε is dielectric constant of semiconductor, Asb is area of contact between source & body
(substrate) and Wsb width of depletion layer between source and substrate.
The width of depletion layer between source & body/substrate can be given by,
2e 1 1
Wsb = + ( Vo + VSB ) (139)
q NA ND
Where VSB is reverse biasing voltage between source & substrate and Vo ss built-in potential of
source-substrate junction, NA is acceptor concentration and ND is donor concentration.
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Frequency Response EDC & ANALOG ELECTRONICS [35]
Where VDB is reverse bias voltage between drain & body or substrate.
S D
G
S D
Wsb Wdb
Fig. 32 Source-body and drain-body junctions of MOSFET
S
S
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Frequency Response EDC & ANALOG ELECTRONICS [36]
G sCgd D Io
+
Iin Vgs sCgs ro
gmVgs
–
S S
Fig. 34 High frequency model of Common Source MOSFET in s-domain
with drain terminal shorted with source terminal
⇒ Io = gm Vgs – sCgdVgs
Io
⇒ Vgs = (141)
g m - s Cgd
Io g m - s Cgd
= (143)
Iin s ( Cgs + Cgd )
gm
Where, wT = = 2π f T (146)
Cgs + Cgd
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Frequency Response EDC & ANALOG ELECTRONICS [37]
gm
⇒ fT = (147)
2π ( Cgs + Cgd )
When f = fT, the short circuit current gain of MOSFET become unity. Therefore, the parameter fT
called unity gain frequency of MOSFET.
RD
Cco
Vo
Vs Rsig Cci G
RL
RG
RS Cs
Fig. 35 High frequency response of common source MOSFET amplifier
The coupling and bypass capacitors of amplifier behave like short circuit at high frequencies so the
high frequency equivalent model of the common source amplifier shown above can be drawn as
shown in Fig. 36.
Rsig G Cgd
+ +
+
Vgs Cgs gmVgs RL
VS ~ RG ro RD
Vo
– –
–
S
Fig. 36 High frequency equivalent circuit of common source MOSFET amplifier
Above high frequency equivalent circuit of the amplifier can be redrawn by reducing the components
of the circuit as under,
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Frequency Response EDC & ANALOG ELECTRONICS [38]
Rsig sCgd
G D
+ +
+
Vs ~ Vgs sCgs
gmVgs
RL Vo
–
– S –
Fig. 37 Simplified high frequency equivalent circuit of common source MOSFET amplifier
1 Vs′
⇒ + s ( Cgd + Cgs ) Vgs - sCgd V0 =
R ′sig R ′sig
Vgs 1
⇒ = (153)
Vs′ 1 + s Cgs + (1 + g m R ′L ) Cgd R ′si g
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Frequency Response EDC & ANALOG ELECTRONICS [39]
Vo g m R ′L
= - (154)
Vs′ 1 + s Cgs + (1 + g m R ′L ) Cgd R ′sig
Vo AM
= (156)
Vs 1 + sCin R ′sig
RG RG
Where, AM = - g m R ′L =
- × g m × ( ro || R D || R L ) (157)
R G + R sig R G + R si g
(160)
1
⇒ fH = (161)
2π Cin R ′sig
It can be observed from above equation that highs cutoff frequency of MOSFET is determined by
parasitic capacitance of MOSFET.
Note : i. Upper cutoff frequency reduces with increase in signal source resistance (Rsig)
ii. The capacitance Cgd appears as (1 + gm R′L) Cgd when it is transferred as input terminals. This
effect is called miller effect and factor (1 + gm R′L) is called miller multiplication factor or miller
multiplier.
iii. Emitter bypass capacitor (CE) in BJT amplifier and source by pass capacitor (CS) in MOSFET
determine overall lower cutoff frequencies because value of CE & CS as highs than coupling
capacitors.
Example 5
In the circuit shown in the figure, transistor M1 is in saturation and has transconductance gm = 0.01
Siemens. Ignoring internal parasitic capacitances and assuming the channel length modulation λ to
be zero, the small signal input pole frequency (in kHz) is .............
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Frequency Response EDC & ANALOG ELECTRONICS [40]
VDD
1k
Vo
50pF
M1
Vin
5k
GATE(EC-III/2016/2M)
Solution : Ans. (56 to 63)
Small signal AC equivalent circuit of given amplifier can be drawn as under,
C
5 k G 50pF D
Vin Vo
RS +
Vgs gmvgs RD
–
S
Vo
Voltage gain of amplifier, Av = =-g m R D =-0.01 × 1 × 103
Vgs
⇒ Av = –10
The circuit can be redrawn by applying Miller’s Theorem as under,
Rs G D Vo
Vin 5 k + 1
(1–Av)C V gmvgs 1 C RD
Av
gs
1
⇒ f = = 57.87 kHz
2π × 5 × 10 × 1 - ( -10 ) × 50 × 10-12
3
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Frequency Response EDC & ANALOG ELECTRONICS [41]
9 Step Response of An Amplifier
A measure of fidelity an amplifier is reproduction of an input signal. A step signal or square wave
signal can be easily generated & can be used to study response of an amplifier. There is close relation
between leading edge of step signal and high frequency response of amplifier. Similarly, there is close
relation between low frequency response and distance of flat top of a step signal. High frequency
response of amplifier measures ability of amplifier to reproduce fast varying high frequency signals
and low frequency response is measure of fidelity of amplifier for slow varying low frequency signal.
An important characteristics of step is fast or abrupt change at beginning and very small or negligible
variation during flat top position.
Rise Time :
Rise time is measure of high frequency response of an amplifier. When a step voltage is applied to
an amplifier, the response of amplifier to abrupt change of input is high frequency response. The
behavior of amplifier is similar to a low pass equivalent RC circuit as shown in Fig. 38.
vi
R2 vo
+ + V
V 0.9V
vi C2 vo
– – tr
t t1 t2 t
⇒ t1 = 0.1 R2 C2 (164)
Let at t = t2, vo(t) = 0.9 V
-
t
R 2 C2
⇒ 0.9 V = V 1 - e
(165)
⇒ t2 = 2.3 R2 C2 (166)
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Frequency Response EDC & ANALOG ELECTRONICS [42]
Rise time, tr = t2 – t1 = (2.3 – 1) R2 C2 = 2.2 R2 C2 (167)
For a low pass circuit upper cut off frequency is given by,
1
fH = (168)
2π C 2 R 2
1
⇒ C2 R2 = (169)
2π f H
2.2
∴ Rise time of amplifier, tr = (170)
2π f H
0.35
⇒ t r = (171)
fH
Tilt or Sag :
Tilt or sag is measure of low frequency response of an amplifier. An amplifier at low frequency
behaves like a high pass RC circuit as shown in Fig. 39. When a step signal of amplitude
‘V’ is applied to a high pass filter, the output of circuit become,
t
-
R1C 1 t
vo(t) = Ve ≈ V 1 - (172)
R1C1
The output voltage at any time t1 becomes,
t
V′ = V 1 - 1
R1C1
vi(t) vo(t)
C1
+ + V
V
vi(t) R1 vo(t) V1
– – t1 t
t1 t
V - V′ t1
% age sag or tilt, P = × 100= × 100 (173)
V R1C1
T
If input is a square wave with t1 =
2
T 1
Then P = × 100
= × 100 (174)
2 R1C1 2f R1 C1
1
For high pass filter, lower cutoff frequency, f L = (175)
2π R1C1
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Frequency Response EDC & ANALOG ELECTRONICS [43]
1
⇒ R1 C1 = (176)
2π f L
π fL
∴ P = × 100 (177)
f
0.35
⇒ fH =
tr
given, tr = 35 n sec.
0.35
⇒ fH =
35 × 10-9
⇒ f H = 10MHz
10. Noise
When no signal is applied to an amplifier a small output is still obtained from output of the amplifier
which is called amplifier noise. Noise is hiss or crackle sound is case of audio amplifier and it is called
snow in case of a video amplifier. The various noise sources found in an amplifier are discussed as
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Frequency Response EDC & ANALOG ELECTRONICS [44]
follows,
1. Thermal or Johnson Noise
The electrons in a conductor possess varying amount of thermal energy which produces small noise
potential within the conductor. These random fluctuations produced by thermal agitation of electrons
are called Thermal or Johnson Noise. The rms value of thermal noise voltage of is given by,
Vn = 4k TRB
Note : A transistor does not generate white noise except over midband region. The amount of noise generated
depends on center frequency, Q-point & source resistance
rrr
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Frequency Response EDC & ANALOG ELECTRONICS [46]
GATE QUESTIONS
Q.1 α–cut off frequency of a bipolar junction transistor
(a) Increases with the increase in base width
(b) Increases with the increases in emitter width
(c) Increases with increase in the collector width
(d) Increases with decrease in the base width
GATE(EC/1993/2M)
Q.2 The fT of a BJT is related to its gm, Cπ and Cµ as follows:
Cπ + Cµ eπ ( Cπ + Cµ )
fT =
(a) (b) fT =
gm gm
gm gm
fT =
(c) (d) fT =
Cπ + Cµ 2π ( Cπ + Cµ )
GATE(EC/1998/1M)
Q.3 From a measurement of the rise time of the output pulse of an amplifier whose input is a small amplitude
square wave, one can estimate the following parameter of the amplifier :
(a) Gain-bandwidth product (b) Slow rate
(c) Upper 3-dB frequency (d) Lower3-dB frequency
GATE(EC/1998/1M)
Q.4 The current gain of a bipolar transistor drops at high frequencies bacause of
(a) transistor capacitances (b) high current effects in the base
(c) parasitic inductive elements (d) the early effect
GATE(EC/2000/1M)
Q.5 An npn BJT has gm = 38 mA/V, Cµ = 10 −14
F, Cπ = 4×10−13
F, and DC gain β0 = 90. For this transistor
fT and fβ are
(a) fT = 1.64 × 108Hz and fβ = 1.47 × 1010Hz (b) fT = 1.47 × 1010Hz and fβ = 1.64 × 108Hz
(c) fT = 1.33 × 1012Hz and fβ = 1.47 × 1010Hz (d) fT= 1.47 × 1010Hz and fβ = 1.33 × 1012Hz
GATE(EC/2001/2M)
Q.6 Generally, the gain of a transistor amplifier falls at high frequencies due to the
(a) internal capacitances of the device (b) coupling capacitor at the input
(c) skin effect (d) coupling capacitor at the output
GATE(EC/2003/1M)
Q.7 A small signal source vi(t) = A cos 20t + B sin 106t is applied to a transistor amplifier as shown below.
The transistor has β = 150 and hie = 3kΩ. Which expression best approximates v0(t) ?
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Frequency Response EDC & ANALOG ELECTRONICS [47]
12V
100 k 3 k
vo (t)
100 nF
vi (t)
100 nF
900 10 µF
20 k
(a) v0 (t) = − 1500 (A cos 20t + B sin 106 t) (b) v0 (t) = − 150 (A cos 20t + B sin 106 t)
(c) v0 (t) = − 1500B sin 106 t (d) v0 (t) = − 150B sin 106 t
GATE(EC/2009/2M)
Q.8 A pulse having a rise time of 40 ns is passed through a dc amplifier with a bandwidth of
12 MHz. The rise time of the pulse at the output of the pulse at the output of the amplifier nearly equals
(a) 30 ns (b) 40 ns
(c) 50 ns (d) 80 ns
GATE(IN/1997/1M)
Q.9 In the circuit shown, the voltage source V(t) = 15 + 0.1 sin (100 t) volts. The PMOS transistor is
biased such that it is in saturation with its gate-source capacitance being 4 nF and its transconductance
at the operating point being 1 mA/V. Other parasitic impedances of the MOSFET may be ignored. An
external capacitor of capacitance 2 nF is connected across the PMOS transistor as shown. The input
impedance in mega ohm as seen by the voltage source is ............ MΩ.
Vs
GATE(IN/2015/2M)
Q.10 The Miller effect in the context of a Common Emitter amplifier explains
(a) an increase in the low-frequency cutoff frequency
(a) an increase in the high-frequency cutoff frequency
(c) a decrease in the low-frequency cutoff frequency
(d) a decrease in the high-frequency cutoff frequency
GATE (EC-I/2017/1M)
Q.11 Common emitter amplifier shown in fig. below has CC1 = CE = CC2 = 1 µF, RB = 100 kΩ, RS = 5 kΩ,
RL = 5 kΩ, RC = 8 kΩ,, RE = 1 kΩ. The transconductance (gm) of BJT is 40 mA/V and input resistance
(rπ) is 2.5 kΩ.
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Frequency Response EDC & ANALOG ELECTRONICS [48]
+VCC
RC
CC2
CC1
RL
RS
RB
Vs +
–
RE CE
10H 1nF
2k
+
Q1 C2
2.7V +– vo 2k
2k
vi ~ C1
–
Q.1 Ans.(d)
The β-cutoff frequency and α-cutoff frequencies of BJT are related by,
fβ = (1– α) fα
1
⇒ fα = fβ
1− α
When basewidth of BJT is decreased the carriers recombination in the base region reduces. So the
common base gain, α, increases. Therefore (1 – α) decreases which in turn increases fα and vice-
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Frequency Response EDC & ANALOG ELECTRONICS [49]
versa. Hence fα increases with decrease in the base width.
Q.2 Ans.(d)
The Short circuit unity gain frequency of BJT is given by
where, Cπ = Ce = Emitter junction capacitance
Cµ = Cc = Collector junction capacitance
Q.3 Ans.(c)
The rise time of output pulse of an amplifier to small amplitude square wave is given by
0.35
tr =
fH
Q.6 Ans.(a)
The gain of transistor amplifier falls at high frequencies due to the internal capacitances of the device
Q.7 Ans.(d)
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Frequency Response EDC & ANALOG ELECTRONICS [50]
12V
R1 =100 k Rc =3 k
vo (t)
Co =100 nF
vi (t)
Ci =100 nF
Re =900 Ce =10 µF
R2 =20 k
106
and f2 = = 159kHz
2π
As frequency f1 is less than the cutoff frequency of the amplifier so component of input with frequency
f1 is blocked by the amplifier only compenent with frequency f2 is amplified. For second component
the coupling and bypass capacitors behave like short circuit. Replacing the BJT with its equivalent
h-parameter model the ac equivalent circuit of amplifier can be drawn as under,
ib hic
+ + +
R R2 ib
vi 1 vin RC vo
– – –
}
RTH
vi
Base current, ib =
h ie
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Frequency Response EDC & ANALOG ELECTRONICS [51]
From output circuit,
βR C
vo = – βib × RC = − ·vi
h ie
150 × 3k
⇒ vo = − ·Bsin106 t
3k
Q.9 Ans.: 1
AC equivalent circuit of given amplifier can be drawn as under,
Cgs
G S
– vsg +
V(t)
~ Cds
D
gmvsg
RD
gmvsg
V(t) ~ Zin Cgs (1–Av)Cds
1
RD 1 Cds
A v
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Frequency Response EDC & ANALOG ELECTRONICS [52]
vD 1 ≈ g R =−1 × 10−3 × 2 × 103
Av = ≈ g m R D ||
vsg 1 m D
jw 1 − Cds
Av
⇒ Av = –2
Impedance seen by the source,
1 1
Zin = ||
jwCgs jw (1 − A v ) Cds
1
⇒ Zin =
jwCeq
1 1
∴ Zin = = − j1MΩ
=
jw Ceq j100 × 10 × 10−9
or |Zin| = 1 MΩ
Q.10 Ans.(d)
The Miller’s effect increases the effective capacitances of the circuit on input as well as output circuit
of amplifier. The increase in effective capacitance results in increase in time constant and decrease in
higher cutoff frequency of the amplifier.
Q.11 Ans.(c)
The ac equivalent of the given amplifier can be drawn as under,
Rs CC1 ib CC2
Vs Vo
ib
RB r RC RL
RE CE
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Frequency Response EDC & ANALOG ELECTRONICS [53]
Cut off frequency due to CE is obtained by neglecting effects of CC1 & CC2 or replacing these
capacitors by short circuit.
1000 × 72.6
Req3 = = 67.68Ω
1000 + 22.6
1
∴ fC3 = 2π × 67.68 × 1 × 10−6 = 2.35kHz
+ 5V
12. Ans.(a)
10H 1nF
2k
+
Q1 C2
2.7V +– vo 2k
2k
vi ~ C1
–
Z
Resonant frequency of output stage,
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Frequency Response EDC & ANALOG ELECTRONICS [54]
1 1
ωo = = = 10 M rad/sec
LC 10 × 10 6 × 1 × 10−9
−
Shortcut :- Given amplifier is tuned amplifier which has maximum voltage gain at resonant
frequency of collector circuit. Given frequency is equal to resonant frequency of tank circuit so at
given frequency voltage gain of amplifier is maximum.
rrr
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