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  • 3DD13009 Lge

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    elvariste jerry
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    This document provides specifications for a TO-220 packaged NPN bipolar junction transistor. Key details include: - Maximum ratings for collector-base voltage, collector-emitter voltage, and emitter-base voltage. - Electrical characteristics including DC current gain, collector-emitter saturation voltage, base-emitter saturation voltage, and transition frequency. - Classification of transistors by DC current gain range. - Dimensions of the TO-220 transistor package.

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    3DD13009-LGE

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    This document provides specifications for a TO-220 packaged NPN bipolar junction transistor. Key details include: - Maximum ratings for collector-base voltage, collector-emitter voltage, and emitter-base voltage. - Electrical characteristics including DC current gain, collector-emitter saturation voltage, base-emitter saturation voltage, and transition frequency. - Classification of transistors by DC current gain range. - Dimensions of the TO-220 transistor package.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    69 views2 pages

    3DD13009 Lge

    Uploaded by

    elvariste jerry
    This document provides specifications for a TO-220 packaged NPN bipolar junction transistor. Key details include: - Maximum ratings for collector-base voltage, collector-emitter voltage, and emitter-base voltage. - Electrical characteristics including DC current gain, collector-emitter saturation voltage, base-emitter saturation voltage, and transition frequency. - Classification of transistors by DC current gain range. - Dimensions of the TO-220 transistor package.

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    of 2

    3DD13009(NPN)

    TO-220 Transistor

    TO-220
    1. BASE

    2. COLLECTOR

    3. EMITTER
    3
    2
    Features
    1

    — power switching applications

    MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

    Symbol Parameter Value Units


    VCBO Collector-Base Voltage 700 V
    VCEO Collector-Emitter Voltage 400 V
    VEBO Emitter-Base Voltage 9 V
    Dimensions in inches and (millimeters)
    IC Collector Current -Continuous 12 A
    PC Collector Power Dissipation 2 W
    TJ Junction Temperature 150 ℃
    Tstg Storage Temperature -55-150 ℃

    ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO IC =1mA, IE=0 700 V

    Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 400 V

    Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V

    Collector cut-off current ICBO VCB=700V,IE=0 100 µA

    Collector cut-off current ICEO VCE=400V,IB=0 100 µA

    Emitter cut-off current IEBO VEB=9V, IC=0 100 µA

    DC current gain hFE VCE=5V, IC=3A 8 40

    Collector-emitter saturation voltage VCE(sat) IC=8A,IB=1.6A 1.5 V

    Base-emitter saturation voltage VBE(sat) IC=8A, IB=1.6A 1.6 V

    VCE=10V,Ic=500mA,
    Transition frequency fT 4 MHz
    f =1MHz

    Fall time tf IC=8A, IB1=-IB2=1.6A 0.9 µs

    Storage time ts VCC=125V 4 µs

    CLASSIFICATION OF hFE

    Rank

    Range 8-15 15-20 20-25 25-30 30-35 35-40


    3DD13009(NPN)
    TO-220 Transistor

    Typical Characteristics

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