® STTH30R03CW/CG

HIGH FREQUENCY SECONDARY RECTIFIER

MAJOR PRODUCT CHARACTERISTICS

IF(AV) 2 x 15 A
VRRM 300 V
IRM (typ.) 4.5A
Tj (max) 175 °C A2
K
VF (max) 1.4 V
A1
trr (max) 35 ns
TO-247
STTH30R03CW
FEATURES AND BENEFITS
■ Designed for high frequency applications.
■ Hyperfast recovery competes with GaAs devices. K

■ Allows size decrease of snubbers and heatsinks.

DESCRIPTION A2

The TURBOSWITCH "R" is an ultra high A1

performance diode. 2
D PAK
This TURBOSWITCH family, which drastically
cuts losses in associated MOSFET when run at STTH30R03CG
high dIF/dt, is suited for HF OFF-Line SMPS and
DC/DC converters.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 300 V
IF(RMS) RMS forward current 30 A
IF(AV) Average forward current Tc = 120°C Per diode 15 A
δ = 0.5 Per device 30

IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 120 A

Tstg Storage temperature range - 65 + 175 °C
Tj Maximum operating junction temperature + 175 °C

July 2002 - Ed: 1C 1/6

STTH30R03CW/CG

THERMAL AND POWER DATA

Symbol Parameter Value Unit
Rth (j-c) Junction to case Per diode 2.0 °C/W

Total 1.2
Rth (c) Coupling 0.4

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests conditions Min. Typ. Max. Unit

IR * Reverse leakage VR = VRRM Tj = 25°C 20 µA
current
Tj = 125°C 30 200

VF ** Forward voltage drop IF = 15 A Tj = 25°C 1.9 V

Tj = 125°C 1.1 1.4

Pulse test : * tp = 5 ms, δ < 2 %

** tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :

P = 1 x IF(AV) + 0.026 IF2(RMS)

RECOVERY CHARACTERISTICS

Symbol Tests conditions Min. Typ. Max. Unit

trr IF = 0.5 A Irr = 0.25 A IR = 1A Tj = 25°C 20 ns

IF = 1 A dIF/dt = - 50 A/µs VR = 30V 35

IRM VR = 200 V IF = 15A dIF/dt = - 200A/µs Tj = 125°C 4.5 6 A

S factor 0.4

TURN-ON SWITCHING CHARACTERISTICS

Symbol Tests conditions Min. Typ. Max. Unit

tfr Tj = 25°C IF = 15A dIF/dt = 100A/µs 300 ns
measured at 1.1xVFmax
VFP Tj = 25°C IF = 15A dIF/dt = 100A/µs 3.5 V

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 STTH30R03CW/CG

Fig. 1: Conduction losses versus average current Fig. 2: Forward voltage drop versus forward
current.

P(W) IFM(A)
30 δ = 0.5
200
δ = 0.05 δ = 0.1 δ = 0.2 Tj=125°C

25 100 Maximum values

δ=1
Tj=125°C
20 Typical values

Tj=25°C
15 Maximum values
10
10
T

5
IF(av) (A) δ=tp/T tp VFM(V)
0 1
0 2 4 6 8 10 12 14 16 18 20 0 1 1 2 2 3 3 4 4

Fig. 3: Relative variation of thermal impedance Fig. 4: Peak reverse recovery current versus
junction to case versus pulse duration. dIF/dt (90% confidence).

Zth(j-c)/Rth(j-c) IRM(A)
1.0 12
VR=200V
Tj=125°C IF= 2 x IF(av)

0.8 10
IF=IF(av)

δ = 0.5 8
0.6
6
IF= 0.5 x IF(av)
0.4 δ = 0.2

δ = 0.1
4
T
0.2 2
Single pulse
tp(s) dIF/dt(A/µs)
δ=tp/T tp
0.0 0
1E-3 1E-2 1E-1 1E+0 0 50 100 150 200 250 300 350 400 450 500

Fig. 5: Reverse recovery time versus dIF/dt Fig. 6: Reverse recovery charges versus dIF/dt
(90% confidence). (90% confidence).

trr(ns) Qrr(nC)
80 150
VR=200V VR=200V
Tj=125°C
70 Tj=125°C IF=2 x IF(av)
125
60
IF=IF(av)
IF=2 x IF(av) 100
50
IF=IF(av)
40 75 IF=0.5 x IF(av)

30
50
20
IF=0.5 x IF(av) 25
10 dIF/dt(A/µs)
dIF/dt(A/µs)
0 0
0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500

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STTH30R03CW/CG

Fig. 7: Softness factor (tb/ta) versus dIF/dt Fig. 8: Relative variation of dynamic
(typical values). parameters versus junction temperature
(Reference: Tj=125°C).

S factor 2.6
0.6 2.4
2.2
S factor
0.5 2.0
1.8
0.4 1.6
1.4
0.3 1.2
1.0
0.2 0.8 IRM
0.6
IF < 2 x IF(av)
0.1 VR=200V 0.4
dIF/dt(A/µs) Tj=125°C 0.2 Tj(°C)
0.0 0.0
0 50 100 150 200 250 300 350 400 450 500 25 50 75 100 125

Fig. 9: Transient peak forward voltage versus Fig. 10: Forward recovery time versus dIF/dt
dIF/dt (90% confidence). (90% confidence).

VFP(V) tfr(ns)
20 500
IF=IF(av) VFR=1.1 x VF max.
18 Tj=125°C 450 IF=IF(av)
Tj=125°C
16 400
14 350
12 300
10 250
8 200
6 150
4 100
2 dIF/dt(A/µs) 50 dIF/dt(A/µs)
0 0
0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500

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 STTH30R03CW/CG

PACKAGE MECHANICAL DATA

D2PAK

DIMENSIONS
A
REF. Millimeters Inches
E
C2
L2 Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
D A2 0.03 0.23 0.001 0.009
L B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
L3
A1
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
B2 C R D 8.95 9.35 0.352 0.368
B E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
G L 15.00 15.85 0.590 0.624
A2
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
M R 0.40 typ. 0.016 typ.
* V2 V2 0° 8° 0° 8°
* FLAT ZONE NO LESS THAN 2mm

FOOTPRINT

16.90

10.30 5.08

1.30

3.70
8.90

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STTH30R03CW/CG

PACKAGE MECHANICAL DATA

TO-247

DIMENSIONS
V REF. Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
Dia. A 4.85 5.15 0.191 0.203
V
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031
A
F 1.00 1.40 0.039 0.055
H
F1 3.00 0.118
F2 2.00 0.078
F3 2.00 2.40 0.078 0.094
L5
F4 3.00 3.40 0.118 0.133
G 10.90 0.429
L
H 15.45 15.75 0.608 0.620
L2 L4
L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169
F1 F2 L1
L2 18.50 0.728
F3 L3 14.20 14.80 0.559 0.582
D
V2 L3
F4 L4 34.60 1.362
F(x3) L5 5.50 0.216
M E M 2.00 3.00 0.078 0.118
G
= = V 5° 5°
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143

Ordering code Marking Package Weight Base qty Delivery mode

STTH30R03CW STTH30R03CW TO-247 4.36g 30 Tube
STTH30R03CG STTH30R03CG D2PAK 1.48g 50 Tube
STTH30R03CG-TR STTH30R03CG D2PAK 1.48g 1000 Tape & Reel
■ Cooling method: by conduction (C)
■ Recommended torque value: 0.8 N.m.
■ Maximum torque value: 1 N.m.
■ Epoxy meets UL 94,V0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
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© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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