FSCQ1265RT 83559

FSCQ-Series — Green Mode Fairchild Power Switch (FPS™)
January 2014
FSCQ-Series:
FSCQ0565RT / FSCQ0765RT / FSCQ0965RT / FSCQ1265RT / FSCQ1565RT
Green Mode Fairchild Power Switch (FPS™)
Features Description
 Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows
lower EMI and higher power conversion efficiency
 Advanced Burst-Mode Operation for under 1 W compared to a conventional hard-switched converter
Standby Power Consumption with a fixed switching frequency. Therefore, a QRC is
 Pulse-by-Pulse Current Limit well suited for noise-sensitive applications, such as
color TV and audio. Each product in the FSCQ series
 Overload Protection (OLP) – Auto Restart contains an integrated Pulse Width Modulation (PWM)
 Over-Voltage Protection (OVP) – Auto Restart controller and a SenseFET. This series is specifically
designed for quasi-resonant off-line Switch Mode Power
 Abnormal Over-Current Protection (AOCP) – Latch Supplies (SMPS) with minimal external components.
 Internal Thermal Shutdown (TSD) – Latch The PWM controller includes an integrated fixed
frequency oscillator, under-voltage lockout, leading-
 Under-Voltage Lockout (UVLO) with Hysteresis edge blanking (LEB), optimized gate driver, internal soft-
start, temperature-compensated precise current sources
 Low Startup Current (Typical: 25 μA)
for loop compensation, and self-protection circuitry.
 Internal High Voltage SenseFET Compared with a discrete MOSFET and PWM controller
solution, the FSCQ series can reduce total cost,
 Built-in Soft-Start (20 ms)
component count, size, and weight; while increasing
 Extended Quasi-Resonant Switching efficiency, productivity, and system reliability. These
devices provide a basic platform for cost-effective
Applications designs of quasi-resonant switching flyback converters.
 CTV
 Audio Amplifier
Related Resources
 AN-4146 — Design Guidelines for Quasi-Resonant Converters Using FSCQ-Series Fairchild Power Switch
 AN-4140 — Transformer Design Consideration for Offline Flyback Converters Using Fairchild Power Switch
Ordering Information
Part Number Package Marking Code BVDSS (V) RDSON Max. (Ω)
FSCQ0565RTYDTU TO-220F-5L (Forming) CQ0565RT 650 2.2
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSQ-Series • Rev. 1.1.3
Typical Circuit
VO
AC
IN
Drain
FSCQ-Series
PWM
Sync GND
VFB VCC
Figure 1. Typical Flyback Application
(1)
Table 1. Maximum Output Power
230 VAC ±15%(2) 85–265 VAC
(3)
Product Open Frame Open Frame(3)
FSCQ0565RT 70 W 60 W
FSCQ0765RT 100 W 85 W
FSCQ0965RT 130 W 110 W
FSCQ1265RT 170 W 140 W
FSCQ1565RT 210 W 170 W
Notes:
1. The junction temperature can limit the maximum output power.
2. 230 VAC or 100/115 VAC with doubler.
3. Maximum practical continuous power in an open frame design at 50C ambient.

FSQ-Series • Rev. 1.1.3 2
Internal Block Diagram
Sync Vcc Drain
5 3 1
+
Quasi-Resonant +
(QR) Switching fs
Threshold - Controller
- 9V/15V
Soft Start
4.6V/2.6V : Normal QR
3.0V/1.8V : Extended QR
Vcc good
Burst Mode Auxiliary

Controller OSC Vref Main Bias
VBurst
Normal Operation Burst Switching
Normal
Vref Vref Vref Operation Internal
IBFB Bias
IFB IB
Vcc
Idelay PWM
VFB
S Q
4
2.5R Gate
R Q
R Driver
LEB
600ns
VSD
Sync
S Q
AOCP
Vovp Vcc good Q S
R Q 2 GND
(Vcc = 9V)
Q R TSD
Vocp
Power Off Reset (Vcc = 6V)
Figure 2. Functional Block Diagram

Pin Configuration
5 SYNC
4 VFB
3 VCC
2 GND
1 DRAIN
Figure 3. Pin Assignments (Top View)
Pin Descriptions
Pin Name Description
1 DRAIN This pin is the high-voltage power SenseFET drain connection.
2 GND This pin is the control ground and the SenseFET source.
This pin is the positive supply input. This pin provides internal operating current for both startup
3 VCC
and steady-state operation.
This pin is internally connected to the inverting input of the PWM comparator. The collector of an
opto-coupler is typically tied to this pin. For stable operation, a capacitor should be placed
4 VFB
between this pin and GND. If the voltage of this pin reaches 7.5 V, the overload protection
triggers, which results in the FPS™ shutting down.
This pin is internally connected to the sync detect comparator for quasi-resonant switching. In
5 SYNC normal quasi-resonant operation, the threshold of the sync comparator is 4.6 V / 2.6 V. Whereas,
the sync threshold is changed to 3.0 V / 1.8 V in an extended quasi-resonant operation.

Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified.
Symbol Parameter Value Unit

VDS Drain Pin Voltage 650 V
VCC Supply Voltage 20 V
Vsync -0.3 to 13
Analog Input Voltage Range V
VFB -0.3 to VCC
FSCQ0565RT 11.2
FSCQ0765RT 15.2
(4)
IDM Drain Current Pulsed FSCQ0965RT 16.4 A
FSCQ1265RT 21.2
FSCQ1565RT 26.4
FSCQ0565RT 2.8
FSCQ0765RT 3.8
Continuous Drain Current (TC = 25°C)
ID FSCQ0965RT 4.1 A(rms)
(TC: Case Back Surface Temperature)
FSCQ1265RT 5.3
FSCQ1565RT 6.6
FSCQ0565RT 5.0
FSCQ0765RT 7.0
Continuous Drain Current* (TDL = 25°C)
ID* FSCQ0965RT 7.6 A(rms)
(TDL: Drain Lead Temperature)
FSCQ1265RT 11.0
FSCQ1565RT 13.3
FSCQ0565RT 1.7
FSCQ0765RT 2.4
ID Continuous Drain Current (TC = 100°C) FSCQ0965RT 2.6 A(rms)
FSCQ1265RT 3.4
FSCQ1565RT 4.4
FSCQ0565RT 400
FSCQ0765RT 570
(5)
EAS Single-Pulsed Avalanche Energy FSCQ0965RT 630 mJ
FSCQ1265RT 950
FSCQ1565RT 1050
FSCQ0565RT 38
FSCQ0765RT 45
PD Total Power Dissipation (TC = 25°C with Infinite Heat Sink) FSCQ0965RT 49 W
FSCQ1265RT 50
FSCQ1565RT 75
TJ Operating Junction Temperature 150 °C
TA Operating Ambient Temperature -25 to +85 °C
TSTG Storage Temperature Range -55 to +150 °C
Continued on the following page…

Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified.

Human Body Model (All Pins Except VFB) (GND – VFB = 1.7 kV) 2.0 kV
ESD
Machine Model (All Pins Except VFB) (GND – VFB = 170 V) 300 V
Notes:
4. Repetitive rating: pulse width limited by maximum junction temperature.
5. L = 15 mH, starting TJ = 25°C. These parameters, although guaranteed by design, are not tested in production.
Thermal Impedance
TA = 25°C unless otherwise specified.

FSCQ0565RT 3.29
FSCQ0765RT 2.60
JC Junction-to-Case Thermal Impedance FSCQ0965RT 2.55 °C/W
FSCQ1265RT 2.50
FSCQ1565RT 2.00

Electrical Characteristics
TA= 25°C unless otherwise specified.
Symbol Parameter Condition Min. Typ. Max. Unit

SenseFET Part
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 650 V
IDSS Zero Gate Voltage Drain Current VDS = 650 V,VGS = 0 V 250 μA
FSCQ0565RT VGS = 10 V, ID = 1 A 1.76 2.20
FSCQ0765RT VGS = 10 V, ID = 1 A 1.40 1.60
RDS(ON) Drain-Source On-State Resistance FSCQ0965RT VGS = 10 V, ID = 1 A 1.00 1.20 Ω
FSCQ1265RT VGS = 10 V, ID = 1 A 0.75 0.90
FSCQ1565RT VGS = 10 V, ID = 1 A 0.53 0.70
FSCQ0565RT 1080
FSCQ0765RT 1415
VGS = 0 V, VDS = 25 V,
CISS Input Capacitance FSCQ0965RT 1750 pF
f = 1 MHz
FSCQ1265RT 2400
FSCQ1565RT 3050
FSCQ0565RT 90
FSCQ0765RT 100
VGS = 0 V, VDS = 25 V,
COSS Output Capacitance FSCQ0965RT 130 pF
f = 1 MHz
FSCQ1265RT 175
FSCQ1565RT 220
Control Section
fOSC Switching Frequency VFB = 5 V, VCC = 18 V 18 20 22 kHz
(7)
ΔfOSC Switching Frequency Variation -25°C ≤ TA ≤ 85°C 0 ±5 ±10 %
IFB Feedback Source Current VFB = 0.8 V, VCC = 18 V 0.50 0.65 0.80 mA
DMAX Maximum Duty Cycle VFB = 5 V, VCC = 18 V 92 95 98 %
DMIN Minimum Duty Cycle VFB = 0 V, VCC = 18 V 0 %
VSTART 14 15 16
UVLO Threshold Voltage VFB = 1 V V
VSTOP 8 9 10
(6)
tSS Soft-Start Time 18 20 22 ms
Burst Mode Section
VBEN Burst Mode Enable Feedback Voltage 0.25 0.40 0.55 V
IBFB Burst Mode Feedback Source Current VFB = 0 V 60 100 140 μA
VFB = 0.9 V,
tBS Burst Mode Switching Time 1.2 1.4 1.6 ms
Duty = 50%
tBH Burst Mode Hold Time VFB = 0.9 V → 0 V 1.2 1.4 1.6 ms
Protection Section
VSD Shutdown Feedback Voltage VCC = 18 V 7.0 7.5 8.0 V
IDELAY Shutdown Delay Current VFB = 5 V, VCC = 18 V 4 5 6 μA
VOVP Over-Voltage Protection VFB = 3 V 11 12 13 V
(6)
VOCL Over-Current Latch Voltage VCC = 18 V 0.9 1.0 1.1 V
(7)
TSD Thermal Shutdown Temperature 140 °C
Continued on the following page…

TA= 25°C unless otherwise specified.
Symbol Parameter Condition Min. Typ. Max. Unit

Sync Section
VSH1 Sync Threshold in Normal QR (H) 4.2 4.6 5.0 V
VSL1 Sync Threshold in Normal QR (L) 2.3 2.6 2.9 V
VSH2 Sync Threshold in Extended QR (H) 2.7 3.0 3.3 V
VCC = 18 V, VFB = 5 V
VSL2 Sync Threshold in Extended QR (L) 1.6 1.8 2.0 V
fSYH Extended QR Enable Frequency 90 kHz
fSYL Extended QR Disable Frequency 45 kHz
Total Device Section
FSCQ0565RT 4 6
FSCQ0765RT 4 6
Operating Supply Current in
IOP (8) FSCQ0965RT VFB = 5 V 6 8 mA
Normal Operation
FSCQ1265RT 6 8
FSCQ1565RT 7 9
Operating Supply Current in Burst Mode (Non-
IOB (8) VFB = GND 0.25 0.50 mA
Switching)
ISTART Startup Current VCC = VSTART – 0.1 V 25 50 μA
(6)
ISN Sustain Latch Current VCC = VSTOP – 0.1 V 50 100 μA
Current Sense Section
FSCQ0565RT 3.08 3.50 3.92
FSCQ0765RT 4.40 5.00 5.60
(9)
ILIM Maximum Current Limit FSCQ0965RT VCC = 18 V, VFB = 5 V 5.28 6.00 6.72 A
FSCQ1265RT 6.16 7.00 7.84
FSCQ1565RT 7.04 8.00 8.96
FSCQ0565RT 0.45 0.65 0.85
FSCQ0765RT 0.65 0.90 1.15
IBUR(pk) Burst Peak Current FSCQ0965RT VCC = 18 V, VFB = Pulse 0.60 0.90 1.20 A
FSCQ1265RT 0.80 1.20 1.60
FSCQ1565RT 1.00
Notes:
6. These parameters, although guaranteed, are tested only in wafer test process.
7. These parameters, although guaranteed by design, are not tested in production.
8. This parameter is the current flowing in the control IC.
9. These parameters indicate inductor current.
10. These parameters, although guaranteed, are tested only in wafer test process.

Typical Performance Characteristics
Figure 4. Operating Supply Current Figure 5. Burst Mode Supply Current

(Non-Switching)
Figure 6. Startup Current Figure 7. Start Threshold Voltage
Figure 8. Stop Threshold Voltage Figure 9. Initial Frequency

Figure 10. Maximum Duty Cycle Figure 11. Over-Voltage Protection
Figure 12. Shutdown Delay Current Figure 13. Shutdown Feedback Voltage
Figure 14. Feedback Source Current Figure 15. Burst Mode Feedback Source Current

Figure 16. Feedback Offset Voltage Figure 17. Burst Mode Enable Feedback Voltage
Figure 18. Sync. Threshold in Normal QR(H) Figure 19. Sync. Threshold in Normal QR(L)
Figure 20. Sync. Threshold in Extended QR(H) Figure 21. Sync. Threshold in Extended QR(L)

Figure 22. Extended QR Enable Frequency Figure 23. Extended QR Disable Frequency
Figure 24. Pulse-by-Pulse Current Limit

Functional Description
1. Startup: Figure 25 shows the typical startup circuit The minimum average of the current supplied from the
and the transformer auxiliary winding for the FSCQ AC is given by:
series. Before the FSCQ series begins switching, it
consumes only startup current (typically 25 μA). The  2  V MIN 
current supplied from the AC line charges the external  V  1
  START  R
(1)
AVG AC
ISUP
capacitor (Ca1) that is connected to the VCC pin. When   2 
 
STR
VCC reaches the start voltage of 15 V (VSTART), the
FSCQ series begins switching and its current min
where Vac is the minimum input voltage, VSTART is
consumption increases to IOP. Then, the FSCQ series
the FSCQ series’ start voltage (15 V), and Rstr is the
continues normal switching operation and the power
startup resistor. The startup resistor should be chosen
required is supplied from the transformer auxiliary avg
so that Isup is larger than the maximum startup
winding, unless VCC drops below the stop voltage of 9 V
current (50 μA).
(VSTOP). To guarantee stable operation of the control IC,
VCC has under-voltage lockout (UVLO) with 6 V Once the resistor value is determined, the maximum
hysteresis. Figure 26 shows the relationship between loss in the startup resistor is obtained as:
the operating supply current of the FSCQ series and the
supply voltage (VCC).
Loss 
1
  AC

 V MAX 2  V 
START
2

2 2  VSTART  VAC
MAX 
 (2)
RSTR  2  
 
max
CDC where Vac is the maximum input voltage.
The startup resistor should have properly rated
dissipation wattage.
1N4007 2. Synchronization: The FSCQ series employs a

AC line
quasi-resonant switching technique to minimize the
(Vacmin - Vacmax) Isup switching noise and loss. In this technique, a capacitor
(Cr) is added between the MOSFET drain and the
Rstr source, as shown in Figure 27. The basic waveforms of
the quasi-resonant converter are shown in Figure 28.
The external capacitor lowers the rising slope of the
VCC Da
drain voltage to reduce the EMI caused when the
MOSFET turns off. To minimize the MOSFET’s
FSCQ-Series
switching loss, the MOSFET should be turned on when
Ca1 Ca2 the drain voltage reaches its minimum value, as shown
in Figure 28.
+ Np
CDC VDC
Figure 25. Startup Circuit Ns
-
Lm Vo
ICC IOP Value
FSCQ0565RT: 4mA (Typ.)
FSCQ0765RT: 4mA (Typ.) Drain
FSCQ1265RT: 6mA (Typ.) Cr +
Ids Vds
Sync
-
GND
IOP
Vco Da
Vcc
Power Up Rcc Na
Power Down
Ca1 Ca2 DSY
ISTART
VCC
VSTOP=9V VSTART=15V VZ RSY1
Figure 26. Relationship between Operating Supply

Current and VCC Voltage
CSY RSY2
Figure 27. Synchronization Circuit

MOSFET MOSFET
On
Vds
Off
Vgs
2VRO
VRO
tQ
Vds VRO
VDC Vsync
Vsypk
Vrh (4.6V)
Ids Ipk Vrf (2.6V)

tR
MOSFET Gate
Figure 28. Quasi-Resonant Operation Waveforms
The minimum drain voltage is indirectly detected by
ON ON
monitoring the VCC winding voltage, as shown in Figure
27 and Figure 29. Choose voltage dividers, RSY1 and
RSY2, so that the peak voltage of the sync signal (V sypk) Figure 29. Normal QR Operation Waveforms
is lower than the OVP voltage (12 V) to avoid triggering
OVP in normal operation. It is typical to set Vsypk to be Switching
lower than OVP voltage by 3–4 V. To detect the Frequency
optimum time to turn on MOSFET, the sync capacitor Extended QR
(CSY) should be determined so that tR is the same with Operation
tQ, as shown in Figure 29. The tR and tQ are given as:
90kHz Normal QR
V RSY 2  Operation
t R  RSY 2  CSY  In CO  

(3)
 2.6 RSY 1  RSY 2 
45kHz
tQ    Lm  Ceo (4)
Na  VO  VFO 
VCO   VFa (5)
Ns
Output Power
where:
Figure 30. Extended Quasi-Resonant Operation
Lm is the primary side inductance of the transformer;
In general, the QRC has a limitation in a wide load
Ns is the number of turns for the output winding; range application, since the switching frequency
Na is the number of turns for the VCC winding; increases as the output load decreases, resulting in a
severe switching loss in the light load condition. To
VFo is the diode forward-voltage drop of the output
overcome this limitation, the FSCQ series employs an
winding;
extended quasi-resonant switching operation. Figure 30
VFa is the diode forward-voltage drop of the VCC shows the mode change between normal and extended
winding; and quasi-resonant operations. In the normal quasi-resonant
Ceo is the sum of the output capacitance of the operation, the FSCQ series enters into the extended
MOSFET and the external capacitor, Cr. quasi-resonant operation when the switching frequency
exceeds 90 kHz as the load reduces. To reduce the
switching frequency, the MOSFET is turned on when
the drain voltage reaches the second minimum level, as
shown in Figure 31. Once the FSCQ series enters into
the extended quasi-resonant operation, the first sync
signal is ignored. After the first sync signal is applied,
the sync threshold levels are changed from 4.6 V and
2.6 V to 3 V and 1.8 V, respectively, and the MOSFET
turn-on time is synchronized to the second sync signal.
The FSCQ series returns to its normal quasi-resonant
operation when the switching frequency reaches 45 kHz
as the load increases.
Vds VCC Vref
Idelay IFB
2VRO VO Vfb SenseFET

4 OSC
H11A817A D1 D2
CB 2.5R
+ Gate
Vfb* R Driver
KA431 -
Vsyn
c
OLP Rsense
VSD
4.6V
3V
2.6V Figure 32. Pulse Width Modulation (PWM) Circuit
1.8V
MOSFET Gate 4. Protection Circuits: The FSCQ series has several

self-protective functions such as overload protection
(OLP), abnormal over-current protection (AOCP), over-
ON ON voltage protection (OVP), and thermal shutdown (TSD).
OLP and OVP are auto-restart mode protections, while
TSD and AOCP are latch mode protections. Because
Figure 31. Extended QR Operation Waveforms
these protection circuits are fully integrated into the IC
without external components, the reliability can be
improved without increasing cost.
3. Feedback Control: The FSCQ series employs
current mode control, as shown in Figure 32. An opto- - Auto-Restart Mode Protection: Once the fault
coupler (such as Fairchild’s H11A817A) and shunt condition is detected, switching is terminated and
regulator (such as Fairchild’s KA431) are typically used the SenseFET remains off. This causes VCC to fall.
to implement the feedback network. Comparing the When VCC falls to the under voltage lockout (UVLO)
feedback voltage with the voltage across the Rsense stop voltage of 9 V, the protection is reset and the
resistor, plus an offset voltage, makes it possible to FSCQ series consumes only startup current
control the switching duty cycle. When the reference pin (25 μA). Then, the VCC capacitor is charged up,
voltage of the shunt regulator exceeds the internal since the current supplied through the startup
reference voltage of 2.5 V, the opto-coupler LED current resistor is larger than the current that the FPS
increases, pulling down the feedback voltage and consumes. When VCC reaches the start voltage of
reducing the duty cycle. This typically occurs when input 15 V, the FSCQ series resumes its normal
voltage is increased or output load is decreased. operation. If the fault condition is not removed, the
SenseFET remains off and VCC drops to stop
3.1 Pulse-by-Pulse Current Limit: Because current voltage again. In this manner, the auto-restart can
mode control is employed, the peak current through the alternately enable and disable the switching of the
SenseFET is limited by the inverting input of the PWM power SenseFET until the fault condition is
comparator (Vfb*) as shown in Figure 32. The feedback eliminated (see Figure 33).
current (IFB) and internal resistors are designed so that
the maximum cathode voltage of diode D2 is about - Latch Mode Protection: Once this protection is
2.8 V, which occurs when all IFB flows through the triggered, switching is terminated and the
internal resistors. Since D1 is blocked when the SenseFET remains off until the AC power line is
feedback voltage (Vfb) exceeds 2.8 V, the maximum unplugged. Then, VCC continues charging and
voltage of the cathode of D2 is clamped at this voltage, discharging between 9 V and 15 V. The latch is
thus clamping Vfb*. Therefore, the peak value of the reset only when VCC is discharged to 6 V by
current through the SenseFET is limited. unplugging the AC power line.
3.2 Leading Edge Blanking (LEB): At the instant the
internal SenseFET is turned on, there is usually a high
current spike through the SenseFET, caused by the
external resonant capacitor across the MOSFET and
secondary-side rectifier reverse recovery. Excessive
voltage across the Rsense resistor can lead to incorrect
feedback operation in the current mode PWM control.
To counter this effect, the FSCQ series employs a
leading edge blanking (LEB) circuit. This circuit inhibits
the PWM comparator for a short time (tLEB) after the
Sense FET is turned on.

Fault 4.2 Abnormal Over Current Protection (AOCP):
occurs Fault When the secondary rectifier diodes or the transformer
Vds Power
removed
on pins are shorted, a steep current with extremely high
di/dt can flow through the SenseFET during the LEB
time. Even though the FSCQ series has OLP (Overload
Protection), it is not enough to protect the FSCQ series
in that abnormal case, since severe current stress will
be imposed on the SenseFET until the OLP triggers.
Vcc The FSCQ series has an internal AOCP (Abnormal
Over-Current Protection) circuit as shown in Figure 35.
15V
When the gate turn-on signal is applied to the power
SenseFET, the AOCP block is enabled and monitors the
9V current through the sensing resistor. The voltage across
the resistor is then compared with a preset AOCP level.
If the sensing resistor voltage is greater than the AOCP
level, the set signal is applied to the latch, resulting in
ICC the shutdown of SMPS. This protection is implemented
IOP in the latch mode.
ISTART
2.5R
t OSC
Normal Fault Normal
operation situation operation S Q
PWM
Gate
Figure 33. Auto Restart Mode Protection R Q Driver
4.1 Overload Protection (OLP): Overload is defined as R LEB

the load current exceeding its normal level due to an
unexpected abnormal event. In this situation, the
Rsense
protection circuit should trigger to protect the SMPS. +
2
However, even when the SMPS is in the normal AOCP GND
VAOCP
-
operation, the over load protection circuit can be
triggered during the load transition. To avoid this
undesired operation, the overload protection circuit is Figure 35. AOCP Block
designed to trigger after a specified time to determine 4.3 Over-Voltage Protection (OVP): If the secondary
whether it is a transient situation or an overload side feedback circuit malfunctions or a solder defect
situation. Because of the pulse-by-pulse current limit causes an open in the feedback path, the current
capability, the maximum peak current through the through the opto-coupler transistor becomes almost
SenseFET is limited, and therefore the maximum input zero. Then, Vfb climbs up in a similar manner to the over
power is restricted with a given input voltage. If the load situation, forcing the preset maximum current to be
output consumes more than this maximum power, the supplied to the SMPS until the over load protection
output voltage (Vo) decreases below the set voltage. triggers. Because more energy than required is provided
This reduces the current through the opto-coupler LED, to the output, the output voltage may exceed the rated
which also reduces the opto-coupler transistor current, voltage before the overload protection triggers, resulting
thus increasing the feedback voltage (Vfb). If Vfb in the breakdown of the devices in the secondary side.
exceeds 2.8 V, D1 is blocked, and the 5 μA current In order to prevent this situation, an over voltage
source starts to charge CB slowly up to VCC. In this protection (OVP) circuit is employed. In general, the
condition, Vfb continues increasing until it reaches 7.5 V, peak voltage of the sync signal is proportional to the
then the switching operation is terminated as shown in output voltage and the FSCQ series uses a sync signal
Figure 34. The delay for shutdown is the time required instead of directly monitoring the output voltage. If the
to charge CB from 2.8 V to 7.5 V with 5 μA. In general, a sync signal exceeds 12 V, an OVP is triggered resulting
20~50 ms delay is typical for most applications. OLP is in a shutdown of SMPS. In order to avoid undesired
implemented in auto restart mode. triggering of OVP during normal operation, the peak
VFB
voltage of the sync signal should be designed to be
Overload Protection
below 12 V. This protection is implemented in the auto
7.5V
restart mode.
4.4 Thermal Shutdown (TSD): The SenseFET and the
control IC are built in one package. This makes it easy
for the control IC to detect abnormal over temperature of
2.8V the SenseFET. When the temperature exceeds
approximately 150°C, the thermal shutdown triggers.
t12= CB*(7.5-2.8)/Idelay
This protection is implemented in the latch mode.
t1 t2 t
Figure 34. Overload Protection

5. Soft Start: The FSCQ series has an internal soft-start Figure 38 shows the burst mode operation waveforms.
circuit that increases PWM comparator’s inverting input When the picture ON signal is disabled, Q1 is turned off
voltage together with the SenseFET current slowly after and R3 and Dz are connected to the reference pin of
stby
it starts up. The typical soft start time is 20 ms. The KA431 through D1. Before Vo2 drops to Vo2 , the
pulse width to the power switching device is voltage on the reference pin of KA431 is higher than
progressively increased to establish the correct working 2.5 V, which increases the current through the opto
conditions for transformers, inductors, and capacitors. LED. This pulls down the feedback voltage (VFB) of
Increasing the pulse width to the power switching device FSCQ series and forces FSCQ series to stop switching.
also helps prevent transformer saturation and reduces If the switching is disabled longer than 1.4 ms, FSCQ
the stress on the secondary diode during startup. For a series enters into burst operation and the operating
fast build up of the output voltage, an offset is current is reduced from IOP to 0.25 mA (IOB). Since there
stby
introduced in the soft-start reference current. is no switching, Vo2 decreases until it reaches Vo2 . As
stby
Vo2 reaches Vo2 , the current through the opto LED
6. Burst Operation: To minimize the power
decreases allowing the feedback voltage to rise. When
consumption in the standby mode, the FSCQ series the feedback voltage reaches 0.4 V, FSCQ series
employs burst operation. Once FSCQ series enters resumes switching with a predetermined peak drain
burst mode, FSCQ series allows all output voltages and current of 0.9 A. After burst switching for 1.4 ms, FSCQ
effective switching frequency to be reduced. Figure 36 series stops switching and checks the feedback voltage.
shows the typical feedback circuit for C-TV applications. If the feedback voltage is below 0.4 V, FSCQ series
In normal operation, the picture on signal is applied and stops switching until the feedback voltage increases to
the transistor Q1 is turned on, which decouples R3, DZ 0.4 V. If the feedback voltage is above 0.4 V, FSCQ
and D1 from the feedback network. Therefore, only VO1 series goes back to the normal operation. The output
is regulated by the feedback circuit in normal operation voltage drop circuit can be implemented alternatively, as
and determined by R1 and R2 as: shown in Figure 37. In the circuit, the FSCQ series goes
into burst mode, when picture off signal is applied to Q1.
 R  R2  Then, Vo2 is determined by the Zener diode breakdown
 2.5   1 
NORM
VO1  (6)
 R2  voltage. Assuming that the forward voltage drop of opto
LED is 1 V, the approximate value of Vo2 in standby
In standby mode, the picture ON signal is disabled and mode is given by:
the transistor Q1 is turned off, which couples R3, DZ, and
D1 to the reference pin of KA431. Then, VO2 is VO 2
STBY
 VZ  1 (8)
determined by the Zener diode breakdown voltage.
Assuming that the forward voltage drop of D1 is 0.7V,
VO2 in standby mode is approximately given by: VO2
 VZ  0.7  2.5
STBY
VO2 (7) Linear Micom
Regulator
VO2
RD
Linear Micom
VO1 (B+) Regulator Rbias VO1 (B+)
RD Dz
Rbias
R3 R1
R1 CF RF
CF RF D1
Q1
C
C Picture ON R
KA431
R KA431
A R2 A R2
Dz
Figure 36. Typical Feedback Circuit to Drop
Output Voltage in Standby Mode
Q1 Picture OFF
Figure 37. Feedback Circuit to Drop Output

Voltage in Standby Mode

(a) (b) (c)
Vo2norm
Vo2stby
VFB
0.4V
Iop
IOP
IOB
Vds
Picture Picture
On Picture Off On
Burst Mode
VFB 0.4V 0.4V 0.4V

0.3V
Vds
1.4ms 1.4ms 1.4ms
0.9A 0.9A
Ids
(a) Mode Change to Burst Operation (b) Burst Operation (c) Mode Change to Normal Operation
Figure 38. Burst Operation Waveforms

FSCQ0565RT Typical Application Circuit
Application Output Power Input Voltage Output Voltage (Max. Current)

12 V (0.5 A)
Universal Input 18 V (0.3 A)
C-TV 59 W
(90–270 Vac) 125 V (0.3 A)
24 V (0.4 A)
Features
 High Efficiency (>83% at 90 Vac Input)
 Wider Load Range through the Extended Quasi-Resonant Operation
 Low Standby Mode Power Consumption (<1 W)
 Low Component Count
 Enhanced System Reliability Through Various Protection Functions
 Internal Soft-Start (20 ms)
Key Design Notes

 24 V Output Designed to Drop to 8 V in Standby Mode
T1 D205
EER3540 EGP20D
12V, 0.5A
RT101 10
1
C204
5D-9
C210 1000uF
C102 470pF 35V
220uF 3 11 1kV
400V
D204
R102 BEAD101 EGP20D
R101
100kΩ 150kΩ 4 18V, 0.3A
0.25W 13
0.25W C205
BD101 C107
R106 C104 680pF C209 1000uF
D102 470pF 35V
D104 1 1.5kΩ 10uF 1kV
1N4937 12 1kV
UF4007 1W 50V
Drain
SYNC D202
ZD101 3 Vcc IC101 5 EGP20J
18V FSCQ0565RT 125V, 0.3A
1W D103 R104 D101 R103 6 14 L201
GND FB 1N4148 1.5kΩ 1N4937 5.1Ω C201 BEAD C202
2 4 0.25W 0.25W 15 C207 100uF 47uF
470pF 160V 160V
16 1kV
C105
C103 C106 R105 3.9nF D203
10uF 47nF 470Ω 50V EGP20D
50V 50V 0.25W 24V, 0.4A
17
7 C203
C208 1000uF
LF101 470pF 35V
18 1kV
R205 VR201
R201
220kΩ 30kΩ
1kΩ
0.25W
OPTO101 0.25W
FOD817A ZD202 Normal
R202 5.1V
C101 1kΩ 0.5W
330nF 0.25W R208 SW201
275VAC Standby
1kΩ R207
FUSE ZD201 0.25W 5.1kΩ
250V C206 R203 D201 0.25W
2.0A 22nF 39kΩ Q202
50V 0.25W KSC945 R206
C301 5.1kΩ
2.2nF 0.25W
R204
Q201 4.7kΩ
KA431 0.25W
Figure 39. FSCQ0565RT Typical Application Circuit Schematic

FSCQ0565RT Typical Application Circuit (Continued)
EER3540
Np1 1 18
N24V Na
2 17
N18V
3 16
Np2
N125V/2
N125V/2
4 15
Np2
N125V/2
5 14
N12V
6 13 N24V
N12V
7 12 N125V/2
Na
8 11 Np1
N18V
9 10
Figure 40. Transformer Schematic Diagram
Winding Specification
No Pin (s→f) Wire Turns Winding Method
Np1 1–3 0.5φ × 1 32 Center Winding
N125V/2 16–15 0.5φ × 1 32 Center Winding
N24V 18–17 0.4φ × 2 13 Center Winding
Na 7–6 0.3φ × 1 20 Center Winding
Pin Specification Remarks
Inductance 1–3 740 μH ±5% 1 kHz, 1 V
Leakage Inductance 1–3 10 μH Max. 2nd all short
Core & Bobbin

 Core: EER3540
 Bobbin: EER3540
 Ae: 107 mm
2

Bill of Materials
Part Value Note Part Value Note

Fuse Inductor
FUSE 250 V / 2 A BEAD101 BEAD
NTC BEAD201 5 μH 3A
RT101 5D-9 Diode
Resistor D101 1N4937 1 A, 600 V
R101 100 kΩ 0.25 W D102 1N4937 1 A, 600 V
R102 150 kΩ 0.25 W D103 1N4148 0.15 A, 50 V
R103 5.1 Ω 0.25 W D104 Short
R104 1.5 kΩ 0.25 W D105 Open
R105 470 Ω 0.25 W ZD101 1N4746 18 V, 1 W
R106 1.5 kΩ 1W ZD102 Open
R107 Open ZD201 1N5231 5.1 V, 0.5 W
R201 1 kΩ 0.25 W D201 1N4148 0.15 A, 50 V
R202 1 kΩ 0.25 W D202 EGP20J 2 A, 600 V
R203 39 kΩ 0.25 W D203 EGP20D 2 A, 200 V
R204 4.7 kΩ 0.25 W, 1% D204 EGP20D 2 A, 200 V
R205 220 kΩ 0.25 W, 1% D205 EGP20D 2 A, 200 V
R206 5.1 kΩ 0.25 W Bridge Diode
R207 5.1 kΩ 0.25 W BD101 GSIB660 6 A, 600 V
R208 1 kΩ 0.25 W Line Filter
VR201 30 kΩ LF101 14 mH
Capacitor Transformer
C101 330 nF / 275 VAC T101 EER3540
C102 220 μF / 400 V Box Capacitor Switch
C103 10 μF / 50 V Electrolytic SW201 ON/OFF For MCU Signal
C104 10 μF / 50 V Electrolytic IC
C105 3.9 nF / 50 V Electrolytic IC101 FSCQ0565RT TO-220F-5L
C106 47 nF / 50 V Film Capacitor OPT101 FOD817A
C107 680 pF / 1 kV Film Capacitor Q201 KA431LZ TO-92
C108 Open Q202 KSC945
C201 100 μF / 160 V Electrolytic
C206 22 nF / 50 V Film Capacitor
C207 470 pF / 1 kV Ceramic Capacitor
C301 2.2 nF / 1 kV AC Ceramic Capacitor


12 V (1 A)
C-TV 83 W
(90–270 Vac) 125 V (0.4 A)
24 V (0.5 A)
Features
Key Design Notes

T1 D205
EER3540 EGP20D
12V, 1.0A
RT101 10
1
C204
5D-9
C210 1000uF
C102 470pF 35V
220uF 3 11 1kV
400V
D204
R102 BEAD101 EGP20D
R101
100kΩ 150kΩ 4 18V, 0.5A
0.25W 13
0.25W C205
BD101 C107
R106 C104 1nF C209 1000uF
D102 470pF 35V
D104 1 1.5kΩ 10uF 1kV
1N4937 12 1kV
UF4007 1W 50V
Drain
SYNC D202
18V FSCQ0765RT 125V, 0.4A
1W D103 R104 D101 R103 6 14 L201
2 4 0.25W 0.25W 15 C207 100uF 47uF
470pF 160V 160V
16 1kV
C105
C103 C106 R105 3.9nF D203
50V 50V 0.25W 24V, 0.5A
17
7 C203
C208 1000uF
LF101 470pF 35V
18 1kV
R205 VR201
R201
220kΩ 30kΩ
1kΩ
0.25W
OPTO101 0.25W
R202 5.1V
C101 1kΩ 0.5W
330nF 0.25W R208 SW201
275VAC Standby
1kΩ R207
250V C206 R203 D201 0.25W
2.0A 22nF 39kΩ Q202
50V 0.25W KSC945 R206
C301 5.1kΩ
2.2nF 0.25W
R204
Q201 4.7kΩ
KA431 0.25W

EER3540
Np1 1 18
N24V Na
2 17
N18V
3 16
Np2
N125V/2
N125V/2
4 15
Np2
N125V/2
5 14
N12V
6 13 N24V
N12V
7 12 N125V/2
Na
8 11 Np1
N18V
9 10
Core & Bobbin

 Core: EER3540
 Bobbin: EER3540
 Ae: 107 mm
2

Bill of Materials

Fuse Inductor
RT101 5D-9 Diode
Resistor D101 1N4937 1 A, 600 V
R101 100 kΩ 0.25 W D102 1N4937 1 A, 600 V
R102 150 kΩ 0.25 W D103 1N4148 0.15 A, 50 V
R103 5.1 Ω 0.25 W D104 Short
R104 1.5 kΩ 0.25 W D105 Open
R105 470 Ω 0.25 W ZD101 1N4746 18 V, 1 W
R107 Open ZD201 1N5231 5.1 V, 0.5 W
R201 1 kΩ 0.25 W D201 1N4148 0.15 A, 50 V
R202 1 kΩ 0.25 W D202 EGP20J 2 A, 600 V
R203 39 kΩ 0.25 W D203 EGP20D 2 A, 200 V
R204 4.7 kΩ 0.25 W, 1% D204 EGP20D 2 A, 200 V
R205 220 kΩ 0.25 W, 1% D205 EGP20D 2 A, 200 V
R207 5.1 kΩ 0.25 W BD101 GSIB660 6 A, 600 V
VR201 30 kΩ LF101 14 mH
C101 330 nF / 275 VAC T101 EER3540
C107 680 pF / 1 kV Film Capacitor Q201 KA431LZ TO-92


12 V (0.5 A)
C-TV 102 W
(90–270 Vac) 125 V (0.5 A)
24 V (1.0 A)
Features
Key Design Notes

T1 D205
EER3540 EGP20D
12V, 0.5A
RT101 10
1
C204
5D-9
C210 1000uF
C102 470pF 35V
220uF 3 11 1kV
400V
D204
R102 BEAD101 EGP20D
R101
100kΩ 150kΩ 4 18V, 0.5A
0.25W 13
0.25W C205
BD101 C107
R106 C104 1nF C209 1000uF
D102 470pF 35V
D104 1 1.5kΩ 10uF 1kV
1N4937 12 1kV
UF4007 1W 50V
Drain
SYNC D202
18V FSCQ0965RT 125V, 0.5A
1W D103 R104 D101 R103 6 14 L201
2 4 0.25W 0.25W 15 C207 100uF 47uF
470pF 160V 160V
16 1kV
C105
C103 C106 R105 3.9nF D203
50V 50V 0.25W 24V, 1.0A
17
7 C203
C208 1000uF
LF101 470pF 35V
18 1kV
R205 VR201
R201
220kΩ 30kΩ
1kΩ
0.25W
OPTO101 0.25W
R202 5.1V
C101 1kΩ 0.5W
330nF 0.25W R208 SW201
275VAC Standby
1kΩ R207
250V C206 R203 D201 0.25W
3.0A 22nF 39kΩ Q202
50V 0.25W KSC945 R206
C301 5.1kΩ
2.2nF 0.25W
R204
Q201 4.7kΩ
KA431 0.25W

EER3540
Np1 1 18
N24V Na
2 17
N18V
3 16
Np2
N125V/2
N125V/2
4 15
Np2
N125V/2
5 14
N12V
6 13 N24V
N12V
7 12 N125V/2
Na
8 11 Np1
N18V
9 10
Core & Bobbin

 Core: EER3540
 Bobbin: EER3540
 Ae: 107 mm
2

Bill of Materials

Fuse Inductor
RT101 5D-9 Diode
Resistor D101 1N4937 1 A, 600 V
R101 100 kΩ 0.25 W D102 1N4937 1 A, 600 V
R102 150 kΩ 0.25 W D103 1N4148 0.15 A, 50 V
R103 5.1 Ω 0.25 W D104 Short
R104 1.5 kΩ 0.25 W D105 Open
R105 470 Ω 0.25 W ZD101 1N4746 18 V, 1 W
R107 Open ZD201 1N5231 5.1 V, 0.5 W
R201 1 kΩ 0.25 W D201 1N4148 0.15 A, 50 V
R202 1 kΩ 0.25 W D202 EGP30J 3 A, 600 V
R203 39 kΩ 0.25 W D203 EGP30D 3 A, 200 V
R204 4.7 kΩ 0.25 W, 1% D204 EGP20D 2 A, 200 V
R205 220 kΩ 0.25 W, 1% D205 EGP20D 2 A, 200 V
R207 5.1 kΩ 0.25 W BD101 GSIB660 6 A, 600 V
VR201 30 kΩ LF101 14 mH
C101 330 nF / 275 VAC T101 EER3540
C107 1 nF / 1 kV Film Capacitor Q201 KA431LZ TO-92


8.5 V (0.5 A)
C-TV 132 W
(90–270 Vac) 140 V (0.6 A)
24 V (1.5 A)
Features
Key Design Notes

T1 D205
EER4042 EGP20D
15V, 0.5A
RT101 10
1
C204
5D-11
C210 1000uF
470pF 35V
C102 3 11 1kV
330uF D204
400V R102 BEAD101 EGP20D
150kΩ 4 8.5V, 0.5A
R101 0.25W 13
BD101 100kΩ C107 C205
R106 C104 1nF C209 1000uF
0.25W D105
1kΩ 10uF 1kV 470pF 35V
1 1N4937 12 1kV
1W 50V
Drain
SYNC D202
3 Vcc IC101 5 EGP30J
ZD102 FSCQ1265RT 140V, 0.6A
D106 R104 D103 R103 6 14 L202
18V GND FB 1.5kΩ 1N4937 5.1Ω C201 BEAD C202
1N4148
1W 0.25W 0.25W 15 C207 150uF 68uF
2 4
470pF 160V 160V
16 1kV
C105
C103 C106 R105 3.3nF D203
10µF 47nF 470Ω 50V EGP30D
50V 50V 0.25W 24V, 1.5A
17
7 C203
C208 1000uF
LF101 470pF 35V
18 1kV
VR201
R201
30kΩ
1kΩ
OPTO101 0.25W
FOD817A ZD201
R202 5.1V
C101 C206 R203 R205 0.5W
1kΩ
330nF 150nF 39kΩ 240kΩ D201 R208
0.25W SW201
275VAC 50V 0.25W 0.25W 1N4148 1kΩ
R207
FUSE 0.25W
5.1kΩ
250V
C301 Q202 0.25W
5.0A
3.3nF Q201 R204 KSC945 R206
KA431 4.7kΩ 10kΩ
LZ 0.25W 0.25W

EER4042
Np1 1 18
N24V Na
2 17
N15V
3 16
Np2
N140V/2 N8.5V
4 15
N140V/2
N140V/2
5 14
NP2
6 13
N140V/2
N8.5V
7 12 NP1
Na
8 11 N24V
N15V
9 10
N24 18–17 0.65φ × 2 8 Space Winding
NP1 1–3 0.1φ × 10 × 2 20 Center Winding
N140V/2 16–15 0.1φ × 10 × 2 23 Center Winding
Np2 3–4 0.1φ × 10 × 2 20 Center Winding
N8.5V 12–13 0.6φ × 1 3 Space Winding
N15V 11–10 0.6φ × 1 6 Space Winding
Na 7–6 0.3φ × 1 13 Space Winding
Core & Bobbin

 Core: EER4042
 Bobbin: EER4042 (18 Pin)
 Ae: 153 mm
2

Bill of Materials

Fuse Inductor
RT101 5D-11 Diode
Resistor D101 1N4937 1 A, 600 V
R101 100 kΩ 0.25 W D102 1N4937 1 A, 600 V
R102 150 kΩ 0.25 W D103 1N4148 0.15 A, 50 V
R103 5.1 Ω 0.25 W D104 Short
R104 1.5 kΩ 0.25 W D105 Open
R105 470 Ω 0.25 W ZD101 1N4746 18 V, 1 W
R106 1 kΩ 1W ZD102 Open
R107 Open ZD201 1N5231 5.1 V, 0.5 W
R201 1 kΩ 0.25 W D201 1N4148 0.15 A, 50 V
R202 1 kΩ 0.25 W D202 EGP30J 3 A, 600 V
R203 39 kΩ 0.25 W D203 EGP30D 3 A, 200 V
R204 4.7 kΩ 0.25 W, 1% D204 EGP20D 2 A, 200 V
R205 240 kΩ 0.25 W, 1% D205 EGP20D 2 A, 200 V
R206 10 kΩ 0.25 W Bridge Diode
R207 5.1 kΩ 0.25 W BD101 GSIB660 6 A, 600 V
VR201 30 kΩ LF101 14 mH
C101 330 nF / 275 VAC T101 EER4042


8.5 V (0.5 A)
C-TV 160 W
(90–270 Vac) 140 V (0.8 A)
24 V (1.5 A)
Features
Key Design Notes

T1 D205
EER4245 EGP20D
15V, 0.5A
RT101 10
1
C204
6D-22
C210 1000µF
470pF 35V
C102 3 11 1kV
470µF D204
400V R102 BEAD101 EGP20D
150kΩ 4 8.5V, 0.5A
R101 0.25W 13
BD101 100kΩ C107 C205
R106 C104 1nF C209 1000µF
0.25W D105
1kΩ 10uF 1kV 470pF 35V
1 1N4937 12 1kV
1W 50V
Drain
SYNC D202
3 Vcc IC101 5 EGP30J
ZD102 FSCQ1565RT 140V, 0.8A
D106 R104 D103 R103 6 14 L202
18V GND FB 1.5kΩ 1N4937 5.1Ω C201 BEAD C202
1N4148
1W 0.25W 0.25W 15 C207 220µF 68µF
2 4
470pF 160V 160V
16 1kV
C105
C103 C106 R105 2.7nF D203
50V 50V 0.25W 24V, 1.5A
17
7 C203
C208 1000uF
LF101 470pF 35V
18 1kV
VR201
R201
30kΩ
1kΩ
OPTO101 0.25W
FOD817A ZD201
R202 5.1V
C101 C206 R203 R205 0.5W
1kΩ
330nF 150nF 39kΩ 240kΩ D201 R208
0.25W SW201
275VAC 50V 0.25W 0.25W 1N4148 1kΩ
R207
FUSE 0.25W
5.1kΩ
250V
C301 0.25W
5.0A Q202
3.3nF Q201 R204 R206
KSC945
KA431 4.7kΩ 10kΩ
LZ 0.25W 0.25W

EER4245
Np1 1 18
N24V Na
2 17
N15V
3 16
Np2
N140V/2 N8.5V
4 15
N140V/2
N140V/2
5 14
NP2
6 13
N140V/2
N8.5V
7 12 NP1
Na
8 11 N24V
N15V
9 10
N24 18–17 0.65φ × 2 5 Space Winding
NP1 1–3 0.08φ × 20 × 2 13 Center Winding
Np2 3–4 0.08φ × 20 × 2 13 Center Winding
N8.5V 12–13 0.6φ × 1 2 Space Winding
N15V 11–10 0.6φ × 1 3 Space Winding
Na 7–6 0.3φ × 1 8 Space Winding
Core & Bobbin

 Core: EER4245
 Bobbin: EER4245 (18 Pin)
 Ae: 201.8 mm
2

Bill of Materials

Fuse Inductor
RT101 6D-22 Diode
Resistor D101 1N4937 1 A, 600 V
R101 100 kΩ 0.25 W D102 1N4937 1 A, 600 V
R102 150 kΩ 0.25 W D103 1N4148 0.15 A, 50 V
R103 5.1 Ω 0.25 W D104 Short
R104 1.5 kΩ 0.25 W D105 Open
R105 470 Ω 0.25 W ZD101 1N4746 18 V, 1 W
R106 1 kΩ 1W ZD102 Open
R107 Open ZD201 1N5231 5.1 V, 0.5 W
R201 1 kΩ 0.25 W D201 1N4148 0.15 A, 50 V
R202 1 kΩ 0.25 W D202 EGP30J 3 A, 600 V
R203 39 kΩ 0.25 W D203 EGP30D 3 A, 200 V
R204 4.7 kΩ 0.25 W, 1% D204 EGP20D 2 A, 200 V
R205 240 kΩ 0.25 W, 1% D205 EGP20D 2 A, 200 V
R206 10 kΩ 0.25 W Bridge Diode
R207 5.1 kΩ 0.25 W BD101 GSIB660 6 A, 600 V
VR201 30 kΩ LF101 14 mH
C101 330 nF / 275 VAC T101 EER4245

PCB Layout
Figure 49. Top View
Figure 50. Bottom View

10.36
B
9.96
2.74
7.00 B
3.28 3.40 6.88 2.34
Ø
3.08 3.20 6.48
16.07 1x 45°
B
15.67
B (16.08 )
18.70
B
17.70
11.13
B
10.13
1.26 1.00 MAX (3x)
5.50 2.96
1.30 MAX (2x) B
4.50 2.56
1 5
0.70
(5X) 0.60
0.50 B
3.48 0.45
2.74 1.70 B
B B (3x) 2.88
2.34 1.30 NOTES:
2 4 A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
4.90 MOLD FLASH AND TIE BAR PROTRUSIONS.
B E. DIMENSION AND TOLERANCE AS PER ASME
4.50
Y14.5-1994.
F. DRAWING FILE NAME: TO220C05REV2
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Dual Cool™ MegaBuck TRUECURRENT®*
EcoSPARK® Saving our world, 1mW/W/kW at a time™ SerDes
MICROCOUPLER
EfficientMax SignalWise
MicroFET
ESBC SmartMax
MicroPak
® SMART START
MicroPak2 UHC®
Solutions for Your Success
® MillerDrive Ultra FRFET
Fairchild SPM®
Fairchild Semiconductor® MotionMax UniFET
STEALTH
MotionGrid® VCX
FACT Quiet Series SuperFET®
FACT® MTi® VisualMax
SuperSOT-3
FastvCore MTx® VoltagePlus
SuperSOT-6
FETBench MVN® XS™
SuperSOT-8
mWSaver® Xsens™
FPS SupreMOS®
OptoHiT
SyncFET 仙童®
OPTOLOGIC®
Sync-Lock™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR
WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE
WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
AUTHORIZED USE
Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary
levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotive
or other transportation, (2) military/aerospace, (3) any safety critical application – including life critical medical equipment – where the failure of the Fairchild product
reasonably would be expected to result in personal injury, death or property damage. Customer’s use of this product is subject to agreement of this Authorized Use
policy. In the event of an unauthorized use of Fairchild’s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be
subject to Fairchild’s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Terms of Use
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors
are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical
and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise.
Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change
Advance Information Formative / In Design
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Preliminary First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
No Identification Needed Full Production
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Obsolete Not In Production
The datasheet is for reference information only.
Rev. I77
© Fairchild Semiconductor Corporation www.fairchildsemi.com

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FSCQ-Series — Green Mode Fairchild Power Switch (FPS™)

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

Figure 1. Typical Flyback Application

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

Burst Mode Auxiliary

Figure 2. Functional Block Diagram

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

Figure 3. Pin Assignments (Top View)

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

Symbol Parameter Value Unit

Continued on the following page…

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

Symbol Parameter Value Unit

Symbol Parameter Value Unit

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

Symbol Parameter Condition Min. Typ. Max. Unit

Continued on the following page…

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

Symbol Parameter Condition Min. Typ. Max. Unit

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

Figure 4. Operating Supply Current Figure 5. Burst Mode Supply Current

Figure 6. Startup Current Figure 7. Start Threshold Voltage

Figure 8. Stop Threshold Voltage Figure 9. Initial Frequency

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

Figure 10. Maximum Duty Cycle Figure 11. Over-Voltage Protection

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

Figure 24. Pulse-by-Pulse Current Limit

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

1N4007 2. Synchronization: The FSCQ series employs a

Figure 26. Relationship between Operating Supply

Figure 27. Synchronization Circuit

Ids Ipk Vrf (2.6V)

2VRO VO Vfb SenseFET

MOSFET Gate 4. Protection Circuits: The FSCQ series has several

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

4.1 Overload Protection (OLP): Overload is defined as R LEB

Figure 34. Overload Protection

Figure 37. Feedback Circuit to Drop Output

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

VFB 0.4V 0.4V 0.4V

1.4ms 1.4ms 1.4ms

Figure 38. Burst Operation Waveforms

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

Application Output Power Input Voltage Output Voltage (Max. Current)

Key Design Notes

Figure 39. FSCQ0565RT Typical Application Circuit Schematic

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

Figure 40. Transformer Schematic Diagram

Core & Bobbin

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

Part Value Note Part Value Note

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

Application Output Power Input Voltage Output Voltage (Max. Current)

Key Design Notes

Figure 41. FSCQ0765RT Typical Application Circuit Schematic

© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com

Figure 42. Transformer Schematic Diagram

Core & Bobbin