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    This document summarizes the specifications of the CJ2306 N-channel MOSFET from Jiangsu Changjiang Electronics Technology. The MOSFET has a maximum drain-source voltage of 30V, continuous drain current of 3.16A, and on-resistance as low as 0.038 ohms. It is suitable for applications such as load switches in portable devices and DC/DC converters. The MOSFET comes in a SOT-23 plastic package and has markings for identification.

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    This document summarizes the specifications of the CJ2306 N-channel MOSFET from Jiangsu Changjiang Electronics Technology. The MOSFET has a maximum drain-source voltage of 30V, continuous drain current of 3.16A, and on-resistance as low as 0.038 ohms. It is suitable for applications such as load switches in portable devices and DC/DC converters. The MOSFET comes in a SOT-23 plastic package and has markings for identification.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    11 views2 pages

    CJ 2306

    Uploaded by

    Calatorescuandreeas
    This document summarizes the specifications of the CJ2306 N-channel MOSFET from Jiangsu Changjiang Electronics Technology. The MOSFET has a maximum drain-source voltage of 30V, continuous drain current of 3.16A, and on-resistance as low as 0.038 ohms. It is suitable for applications such as load switches in portable devices and DC/DC converters. The MOSFET comes in a SOT-23 plastic package and has markings for identification.

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    © All Rights Reserved
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    of 2

    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

    , LTD

    SOT-23 Plastic-Encapsulate MOSFETS

    SOT-23
    CJ2306 N-Channel 30-V(D-S) MOSFET

    FEATURE
    TrenchFET Power MOSFET

    1. GATE
    2. SOURCE
    APPLICATIONS 3. DRAIN
    z Load Switch for Portable Devices
    z DC/DC Converter

    MARKING: S6

    Maximum ratings (at TA=25℃ unless otherwise noted)

    Parameter Symbol Value Unit


    Drain-Source voltage VDS 30
    V
    Gate-Source Voltage VGS ±20
    Continuous Drain Current (TJ=150℃)a,b ID 3.16
    Pulsed Drain Current IDM 20 A
    a,b
    Continuous Source Current(Diode Conduction) IS 0.62
    a,b
    Maximum Power Dissipation PD 0.75 W
    Thermal Resistance from Junction to Ambient (t≤5s) RθJA 100 ℃/W
    Operating Junction and Storage Temperature Range TJ, Tstg -55 to150 ℃
    Notes :
    a. Surface Mounted on 1” ×1” FR4 board, t≤5s.
    b. Pulse width limited by maximum junction temperature.

    A,May,2012
    Electrical characteristics (at TA=25℃ unless otherwise noted)

    Parameter Symbol Test Condition Min Typ Max Unit


    Static
    Drain-Source Breakdown Voltage V(BR)DS VGS = 0V, ID =250µA 30
    V
    Gate-Threshold Voltage VGS(th) VDS =VGS, ID =250µA 1.0 3.0
    Gate-Body Leakage IGSS VDS =0V, VGS =±20V ±100 nA
    Zero Gate Voltage Drain Current IDSS VDS =30V, VGS =0V 0.5 µA
    VGS =10V, ID =3.5A 0.038 0.047
    Drain-Source On-Resistancea RDS(on) Ω
    VGS =4.5V, ID =2.8A 0.052 0.065
    Forward Transconductancea gfs VDS =4.5V, ID =2.5A 7.0 S
    Diode Forward Voltage VSD IS=1.25A,VGS=0V 0.8 1.2 V
    Dynamic
    Gate Charge Qg VDS =15V,VGS =5V,ID =2.5A 3.0 4.5
    Total Gate Charge Qgt 6 9
    nC
    Gate-Source Charge Qgs VDS =15V,VGS =10V,ID =2.5A 1.6
    Gate-Drain Charge Qgd 0.6
    Gate Resistance Rg f =1.0MHz 2.5 5 7.5 Ω
    Input Capacitance Ciss 305
    Output Capacitance Coss VDS =15V,VGS =0V,f =1MHz 65 pF
    Reverse Transfer Capacitance Crss 29
    Switching
    Turn-On Delay Time td(on) 7 11
    VDD=15V,
    Rise Time tr 12 18
    RL=15Ω, ID ≈1A, ns
    Turn-Off Delay Time td(off) 14 25
    VGEN=10V,Rg=6Ω
    Fall Time tf 6 10
    Notes :
    a.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.

    A,May,2012

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