UNISONIC TECHNOLOGIES CO.

, LTD
3N90 Power MOSFET

3 Amps, 900 Volts N-CHANNEL

POWER MOSFET

„ DESCRIPTION
The UTC 3N90 provides excellent RDS(ON), low gate charge and
operation with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.
„ FEATURES
* RDS(ON)=4.1Ω @VGS=10 V
* Ultra Low Gate Charge ( typical 22.7 nC )
* Low Reverse Transfer Capacitance ( CRSS= Typical 13 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
„ SYMBOL

2.Drain

1.Gate

3.Source

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
3N90L-TA3-T 3N90G-TA3-T TO-220 G D S Tube
3N90L-TF3-T 3N90G-TF3-T TO-220F G D S Tube
3N90L-TQ2-T 3N90G-TQ2-T TO-263 G D S Tube
3N90L-TQ2-R 3N90G-TQ2-R TO-263 G D S Tape Reel

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3N90 Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage (VGS=0V) VDSS 900 V
Drain-Gate Voltage (RG=20kΩ) VDGR 900 V
Gate-Source Voltage VGSS ±30 V
Gate-Source Breakdown Voltage (IGS=±1mA) BVGSO 30(MIN) V
Insulation Withstand Voltage (DC) TO-220F VISO 2500 V
Avalanche Current (Note 2) IAR 3 A
Continuous Drain Current ID 3 A
Pulsed Drain Current IDM 10 A
Single Pulse Avalanche Energy (Note 3) EAS 180 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
TO-220/ TO-263 90
Power Dissipation PD W
TO-220F 25
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. starting TJ=25 °C, ID=IAR, VDD=50V
4. ISD≦3A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX).

„ THERMAL DATA
PARAMETER SYMBOL RATING UNIT
TO-220/ TO-263 62.5
Junction to Ambient θJA °C/W
TO-220F 62.5
TO-220/ TO-263 1.38
Junction to Case θJC °C/W
TO-220F 5

„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 900 V
Drain-Source Leakage Current IDSS VDS=900V, VGS=0V 1 μA
Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V ±10 μA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 3 3.75 4.5 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.5A 4.1 4.8 Ω
Forward Transconductance (Note 1) gFS VDS=15V, ID=1.5A 2.1 S
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 590 pF
Output Capacitance COSS VDS=25V, VGS=0V, f=1MHz 63 pF
Reverse Transfer Capacitance CRSS 13 pF
Equivalent Output Capacitance (Note 2) COSS(EQ) VGS=0V, VDS=0V~400V 34 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) VDD=450V, ID=1.5 A, RG=4.7Ω 18 ns
Turn-On Rise Time tR VGS=10V 7 ns
Turn-Off Delay Time tD(OFF) VDD=720V, ID=1.5 A, RG=4.7Ω 45 ns
Turn-Off Fall Time tF VGS=10V 18 ns
Total Gate Charge QG 22.7 nC
Gate-Source Charge QGS VDD=720V, ID=3A, VGS=10V 4.2 nC
Gate-Drain Charge QDD 12 nC

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3N90 Power MOSFET
„ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1) VSD ISD=3A ,VGS=0V 1.6 V
Source-Drain Current ISD 3 A
Source-Drain Current (Pulsed) ISDM 12 A
Reverse Recovery Current IRRM 8.7 A
ISD=3A, di/dt=100A/μs,
Body Diode Reverse Recovery Time tRR 510 ns
VDD=100V, TJ=25°C
Body Diode Reverse Recovery Charge QRR 2.2 nC
Note: 1.Pulse width=300μs, Duty cycle≦1.5%
Note: 2.COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0to 80% VDSS.

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3N90 Power MOSFET
„ TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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3N90 Power MOSFET
„ TEST CIRCUITS AND WAVEFORMS (Cont.)

Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

Same Type
50kΩ as D.U.T.
QG
12V 10V
0.2μF 0.3μF
VDS
QGS QGD
VGS

DUT
VGS
3mA

Charge

Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform

Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

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3N90 Power MOSFET
„ TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage Drain Current vs. Gate Threshold Voltage
300 300

250 250
Drain Current, ID (µA)

Drain Current, ID (µA)

200 200

150 150

100 100

50 50

0 0
0 200 400 600 800 1000 0 1 2 3 4 5
Drain-Source Breakdown Voltage, BVDSS(V) Gate Threshold Voltage, VTH (V)
Drain Current, ID (mA)

Source Current, IS (A)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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