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AWR1443

SWRS202C – MAY 2017 – REVISED JANUARY 2022

AWR1443 Single-Chip 77- and 79-GHz FMCW Radar Sensor


• High-speed data interface to support distributed
1 Features applications (namely, intermediate data)
• FMCW transceiver • Host interface
– Integrated PLL, transmitter, receiver, Baseband, – Control interface with external processor over
and ADC SPI
– 76- to 81-GHz coverage with 4 GHz available – Interrupts for fault reporting
bandwidth • AECQ-100 qualified
– Four receive channels • Device advanced features
– Three transmit channels (two can be used – Embedded self-monitoring with no host
simultaneously) processor involvement
– Ultra-accurate chirp engine based on fractional- – Complex baseband architecture
N PLL – Embedded interference detection capability
– TX power: 12 dBm • Power management
– RX noise figure: – Built-in LDO network for enhanced PSRR
• 14 dB (76 to 77 GHz) – I/Os support dual voltage 3.3 V/1.8 V
• 15 dB (77 to 81 GHz) • Clock source
– Phase noise at 1 MHz: – Supports externally driven clock (square/sine)
• –95 dBc/Hz (76 to 77 GHz) at 40 MHz
• –93 dBc/Hz (77 to 81 GHz) – Supports 40 MHz crystal connection with load
• Built-in calibration and self-test capacitors
– Arm® Cortex®-R4F-based radio control system • Easy hardware design
– Built-in firmware (ROM) – 0.65-mm pitch, 161-pin 10.4 mm × 10.4 mm
– Self-calibrating system across process and flip chip BGA package for easy assembly and
temperature low-cost PCB design
• On-chip programmable core for embedded user – Small solution size
application • Operating Conditions
– Integrated Cortex®-R4F microcontroller clocked – Junction temp range: –40°C to 125°C
at 200 MHz
– On-chip bootloader supports autonomous mode
(loading user application from QSPI flash
memory)
– Integrated peripherals
• Internal memories With ECC
• Radar hardware accelerator (FFT, log-
magnitude computations, and others)
• Integrated timers (watch dog and up to four
32-Bit or Two 64-bit timers)
• I2C (Controller and target modes supported)
• Two SPI ports
• CAN port
• Up to six general-purpose ADC ports

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
AWR1443
SWRS202C – MAY 2017 – REVISED JANUARY 2022 www.ti.com

• Gesture recognition
2 Applications • Car door opener applications
• Proximity sensing
• Parking assistance
• Occupancy detection

Crystal Power Management

Antenna RX1
Structure RX2 SPI/I2C
RX3
RX4 External Interface to
mmWave Sensor MCU External
CSI2 (4 Lane Data + 1 Clock lane) Peripherals
TX1
Reset
TX2
TX3 Error
MCU Clock

Figure 2-1. Autonomous Radar Sensor For Automotive Applications

3 Description
The AWR1443 device is an integrated single-chip FMCW radar sensor capable of operation in the 76- to
81-GHz band. The device is built with TI’s low-power 45-nm RFCMOS process with an integrated ARM R4F
processor and a hardware accelerator for radar data processing, and this solution enables unprecedented levels
of integration in an extremely small form factor. AWR1443 is an ideal solution for low-power, self-monitored,
ultra-accurate radar systems in the automotive space.
The AWR1443 device is a self-contained FMCW radar sensor single-chip solution that simplifies the
implementation of Automotive Radar sensors in the band of 76 to 81 GHz. It enables a monolithic
implementation of a 3TX, 4RX system with built-in PLL and ADC converters. Simple programming model
changes can enable a wide variety of sensor implementation (Short, Mid, Long) with the possibility of dynamic
reconfiguration for implementing a multimode sensor. Additionally, the device is provided as a complete
platform solution including TI reference designs, software drivers, sample configurations, API guides, and user
documentation.
The requirements for a radar device, in terms of radar data cube memory, processing capacity, and functional
safety monitoring, vary for different applications. In this context, the AWR1443 can be viewed as a 77-GHz
radar-on-a-chip solution for entry-level radar applications
Device Information
PART NUMBER(2) PACKAGE(1) BODY SIZE TRAY / TAPE AND REEL
AWR1443FQIGABLQ1 Tray
FCBGA (161) 10.4 mm × 10.4 mm
AWR1443FQIGABLRQ1 Tape and Reel

(1) For more information, see Section 12, Mechanical, Packaging, and Orderable Information.
(2) For more information, see Section 11.1, Device Nomenclature.

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4 Functional Block Diagram


Figure 4-1 shows the functional block diagram of the device.

RX1 LNA IF ADC Cortex R4F


@ 200 MHz

(User programmable)
RX2 LNA IF ADC
Digital Front
End
Boot
Prog RAM* Data RAM*
RX3 LNA IF ADC (Decimation ROM
filter chain)

Serial Flash
QSPI
RX4 LNA IF ADC Radar Data interface
Memory*

Optional External
SPI
MCU interface
TX1
ADC

Bus Matrix
PA
Buffer Radar
SPI / I2C PMIC control
Hardware
Accelerator
Synth Ramp (FFT, Log-
TX2 PA x4
(20 GHz) Generator Mag, and Primary communication
others.) DCAN
interface (automotive)

TX3 PA
DMA Debug For debug
UARTs

RF Control/
Mailbox Test/ JTAG for debug/
BIST
Debug development
Osc. VMON Temp GPADC

Main subsystem
RF/Analog subsystem (Customer programmed)

* Total RAM available in Main subsystem is 576KB (for Cortex-R4F Program RAM, Data RAM, and Radar Data Memory)

Copyright © 2017, Texas Instruments Incorporated

Figure 4-1. Functional Block Diagram

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Table of Contents
1 Features............................................................................1 9.1 Overview................................................................... 48
2 Applications..................................................................... 2 9.2 Functional Block Diagram......................................... 48
3 Description.......................................................................2 9.3 External Interfaces.................................................... 49
4 Functional Block Diagram.............................................. 3 9.4 Subsystems.............................................................. 50
5 Revision History.............................................................. 5 9.5 Accelerators and Coprocessors................................56
6 Device Comparison......................................................... 6 9.6 Other Subsystems.................................................... 56
6.1 Related Products........................................................ 7 9.7 Boot Modes...............................................................57
7 Terminal Configuration and Functions..........................8 10 Applications, Implementation, and Layout............... 61
7.1 Pin Diagram................................................................ 8 10.1 Application Information........................................... 61
7.2 Signal Descriptions................................................... 12 10.2 Short-Range Radar ................................................61
7.3 Pin Multiplexing.........................................................16 10.3 Blind Spot Detector and Ultrasonic Upgrades........ 62
8 Specifications................................................................ 21 10.4 Reference Schematic..............................................63
8.1 Absolute Maximum Ratings...................................... 21 11 Device and Documentation Support..........................64
8.2 ESD Ratings............................................................. 21 11.1 Device Nomenclature..............................................64
8.3 Power-On Hours (POH)............................................ 22 11.2 Tools and Software..................................................65
8.4 Recommended Operating Conditions.......................22 11.3 Documentation Support.......................................... 65
8.5 Power Supply Specifications.....................................23 11.4 Support Resources................................................. 65
8.6 Power Consumption Summary................................. 24 11.5 Trademarks............................................................. 66
8.7 RF Specification........................................................25 11.6 Electrostatic Discharge Caution.............................. 66
8.8 Thermal Resistance Characteristics for FCBGA 11.7 Glossary.................................................................. 66
Package [ABL0161].....................................................26 12 Mechanical, Packaging, and Orderable
8.9 Timing and Switching Characteristics....................... 26 Information.................................................................... 67
9 Detailed Description......................................................48 12.1 Packaging Information............................................ 67

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5 Revision History
Changes from April 30, 2020 to January 10, 2022 (from Revision B (April 2020) to Revision C
(January 2022)) Page
• Global: Replaced "A2D" with "ADC"; Changed Masters Subsystem and Masters R4F to Main Subsystem and
Main R4F; Shift to more inclusive langauge made in terms of Master/Slave terminology..................................1
• (Features) : Mentioned the specific operating temperature range for the mmWave Sensor; ............................ 1
• (Features) : Updated/Changed Phase Noise at 1 MHz from "–94 dBc/Hz (76 to 77 GHz)" to "–95" and "–91
dBc/Hz (77 to 81 GHz)" to "–93".........................................................................................................................1
• (Applications) :Added a figure.............................................................................................................................2
• Updated/Changed Functional Block Diagram for inclusive terminology............................................................. 3
• (Device Comparison): Removed a row on Functional-Safety compliance; Added a table-note for LVDS
Interface; Additional information on Device security updated.............................................................................6
• (Signal Descriptions): Updated descriptions for CLKP and CLKM pins for Reference Oscillator.....................12
• (Absolute Maximum Ratings): Added entries for externally supplied power on the RF inputs (TX and RX) and
a table-note for the signal level applied on TX..................................................................................................21
• (Average Power Consumption at Power Terminals): Added measurement conditions for the specified power
numbers............................................................................................................................................................24
• (Maximum Current Rating at Power Terminals): Updated footnotes section to add estimation assumption for
VIOIN rail.......................................................................................................................................................... 24
• (Synchronized Frame Triggering): Updated the maximum pulse width to 4000ns........................................... 27
• (Clock Specifications): Updated/Changed Table 8-6 to reflect correct device operating temperature range... 29
• (Table. External Clock Mode Specifications): Revised frequency tolerance specs from +/-50 to +/-100 ppm..29
• (Reference Schematics) : Added weblinks to device EVM documentation collateral ......................................63

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6 Device Comparison
FUNCTION AWR1243 AWR1443 AWR1642 AWR1843
Number of receivers 4 4 4 4
Number of transmitters 3 3 2 3
On-chip memory — 576KB 1.5MB 2MB
Max I/F (Intermediate Frequency) (MHz) 15 5 5 10
Max real/complex 2x sampling rate (Msps) 37.5 12.5 12.5 25
Max complex 1x sampling rate (Msps) 18.75 6.25 6.25 12.5
Device Security(1) — — Yes Yes
Processor
MCU (R4F) — Yes Yes Yes
DSP (C674x) — — Yes Yes
Peripherals
Serial Peripheral Interface (SPI) ports 1 1 2 2
Quad Serial Peripheral Interface (QSPI) — Yes Yes Yes
Inter-Integrated Circuit (I2C) interface — 1 1 1
Controller Area Network (DCAN) interface — Yes Yes Yes
CAN-FD — — Yes Yes
Trace — — Yes Yes
PWM — — Yes Yes
Hardware In Loop (HIL/DMM) — — Yes Yes
GPADC — Yes Yes Yes
LVDS/Debug(2) Yes Yes Yes Yes
CSI2 Yes — — —
Hardware accelerator — Yes — Yes
1-V bypass mode Yes Yes Yes Yes
Cascade (20-GHz sync) — — — —
JTAG — Yes Yes Yes
Number of Tx that can be simultaneously used 2 2 2 3(3)
Per chirp configurable Tx phase shifter — — — Yes
PRODUCT PREVIEW (PP),
Product
ADVANCE INFORMATION (AI), PD PD PD PD
status(4)
or PRODUCTION DATA (PD)

(1) Device security features including Secure Boot and Customer Programmable Keys are available in select devices for only select part
variants as indicated by the Device Type identifier in Section 3, Device Information table.
(2) The LVDS interface is not a production interface and is only used for debug.
(3) 3 Tx Simultaneous operation is supported only in AWR1843 with 1V LDO bypass and PA LDO disable mode. In this mode 1V supply
needs to be fed on the VOUT PA pin. Rest of the other devices only support simultaneous operation of 2 Transmitters.
(4) PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

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6.1 Related Products


For information about other devices in this family of products or related products see the links that follow.
mmWave sensors TI’s mmWave sensors rapidly and accurately sense range, angle and velocity with
less power using the smallest footprint mmWave sensor portfolio for automotive
applications.
Automotive mmWave TI’s automotive mmWave sensor portfolio offers high-performance radar front end to
sensors ultra-high resolution, small and low-power single-chip radar solutions. TI’s scalable
sensor portfolio enables design and development of ADAS system solution for every
performance, application and sensor configuration ranging from comfort functions to
safety functions in all vehicles.
Companion products Review products that are frequently purchased or used in conjunction with this product.
for AWR1443

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7 Terminal Configuration and Functions


7.1 Pin Diagram
Figure 7-1 shows the pin locations for the 161-pin FCBGA package. Figure 7-2, Figure 7-3, Figure 7-4, and
Figure 7-5 show the same pins, but split into four quadrants.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

VOUT VOUT OSC


A VSSA VOUT_PA VSSA VSSA VSSA VSSA VSSA
_14APLL _14SYNTH _CLKOUT

RESERVED VIN VIN RESERVED


B VOUT_PA VSSA TX1 VSSA TX2 VSSA TX3 VSSA VBGAP VSSA VSSA
_18CLK _18VCO

VIN ANAMUX/ VSENSE/


C VSSA VSSA VSSA VSSA VSSA VSSA VSSA VSSA VSSA
_13RF2 GPADC5 GPADC6

RESERVED VIN VIOIN RESERVED


D
_13RF2 _18DIFF

E VSSA VSSA VSSA VSS VSS VSS VSS VSS VSSA CLKP VSSA

F RX4 VSSA VIN_18BB VSS VSS VDDIN CLKM

VIN LVDS_ LVDS_


G VSSA VSSA VSSA VSS VSS VSS VSS Reserved TXM[0] TXP[0]
_13RF1

VIN LVDS LVDS


H RX3 VSSA VSS VSS VSS TDI
_13RF1 _TXM[1] _TXP[1]

VIN
J VSSA VSSA VSSA VSS VSS VSS VSS TDO LVDS_CLKM LVDS_CLKP
_13RF1

HS_ HS_
K RX2 VSSA VIN_18BB VSS VSS VSS VSS VSS VIOIN_18 RESERVED RESERVED
_TXM[2] _TXP[2]

HS_ HS_
L VSSA VSSA VSSA VSS VSS VSS VSS TMS RESERVED RESERVED
_TXM[3] _TXP[3]

LVDS_ LVDS_
M RX1 VSSA TCK FRCLKM FRCLKP

WARM HS_ HS_P_


N VSSA VSSA VSSA GPIO[0] RS232_RX RS232_TX GPIO[1] NERROR_OUTMCU_CLK_OUT Sync_in VDDIN GPIO[2] Debug2_M Debug2_M
_RESET

P Analog Test 1/ Analog Test 2/ Analog Test 3/ Reserved MISO_1 SPI_HOST_INTR_1NERROR_IN QSPI_CS QSPI[1] QSPI[3] Sync_out NRESET PMIC_CLK_OUT VNWA VDDIN
GPADC1 GPADC2 GPADC3

R VSSA Analog Test 4/ Reserved Reserved Reserved VDDIN SPI_CS_1 MOSI_1 SPI_CLK_1 QSPI_CLK QSPI[0] QSPI[2] VIOIN VIN_SRAM VSS
GPADC4

Not to scale
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Figure 7-1. Pin Diagram

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1 2 3 4 5 6 7 8

A VSSA VOUT_PA VSSA VSSA VSSA

B RESERVED VOUT_PA VSSA TX1 VSSA TX2 VSSA TX3

C VSSA
VIN
_13RF2
VSSA VSSA VSSA VSSA VSSA VSSA

D RESERVED
VIN
_13RF2

E VSSA VSSA VSSA VSS VSS VSS

F RX4 VSSA VIN_18BB

G VSSA VSSA VSSA


VIN
_13RF1
VSS VSS VSS

Not to scale

1 2

3 4

Figure 7-2. Top Left Quadrant


9 10 11 12 13 14 15

VOUT VOUT OSC


A VSSA VSSA
_14APLL _14SYNTH _CLKOUT

VIN VIN RESERVED


B VSSA VBGAP VSSA VSSA
_18CLK _18VCO

ANAMUX/ VSENSE/
C VSSA VSSA
GPADC5 GPADC6

VIOIN RESERVED
D
_18DIFF

E VSS VSS VSSA CLKP VSSA

F VSS VSS VDDIN CLKM

LVDS_ LVDS
G VSS Reserved TXM[0] _TXP[0]

Not to scale

1 2

3 4

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Figure 7-3. Top Right Quadrant


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1 2 3 4 5 6 7 8

VIN
H RX3 VSSA VSS
_13RF1

VIN
J VSSA VSSA VSSA VSS VSS VSS
_13RF1

K RX2 VSSA VIN_18BB VSS VSS

L VSSA VSSA VSSA VSS VSS VSS

M RX1 VSSA

N VSSA VSSA VSSA GPIO[0] RS232_RX RS232_TX GPIO[1] NERROR_OUT

P Analog Test 1/ Analog Test 2/ Analog Test 3/ Reserved MISO_1 SPI_HOST NERROR_IN QSPI_CS
GPADC1 GPADC2 GPADC3 _INTR_1

R VSSA Analog Test 4/ Reserved Reserved Reserved VDDIN SPI_CS_1 MOSI_1


GPADC4

Not to scale

1 2

3 4

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Figure 7-4. Bottom Left Quadrant

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9 10 11 12 13 14 15

H VSS VSS TDI


LVDS
_TXM[1]
LVDS
_TXP[1]

J VSS TDO LVDS_CLKM LVDS_CLKP

K VSS VSS VSS VIOIN_18


HS_RESERVED HS_RESERVED
_TXM[2] _ TXP[2]

L VSS TMS
HS_RESERVED HS_RESERVED
_TXM[3] _TXP[3]

M TCK
LVDS_
FRCLKM
LVDS_
FRCLKP

N MCU_CLK_OUT Sync_in VDDIN


WARM
_RESET
GPIO[2]
HS_
_Debug2_M
HS_
_Debug2_P

P QSPI[1] QSPI[3] Sync_out NRESET PMIC_CLK_OUT VNWA VDDIN

R SPI_CLK_1 QSPI_CLK QSPI[0] QSPI[2] VIOIN VIN_SRAM VSS

Not to scale

1 2

3 4

Figure 7-5. Bottom Right Quadrant

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7.2 Signal Descriptions


Note
All digital IO pins of the device (except NERROR IN, NERROR_OUT, and WARM_RESET) are
non-failsafe; hence, care needs to be taken that they are not driven externally without the VIO supply
being present to the device.

Note
The GPIO state during the power supply ramp is not ensured. In case the GPIO is used in the
application where the state of the GPIO is critical, even when NRESET is low, a tri-state buffer should
be used to isolate the GPIO output from the radar device and a pull resister used to define the
required state in the application. The NRESET signal to the radar device could be used to control the
output enable (OE) of the tri-state buffer.

7.2.1 Signal Descriptions


PIN PIN DEFAULT PULL
FUNCTION SIGNAL NAME DESCRIPTION
NUMBER TYPE STATUS(1)
TX1 B4 O — Single-ended transmitter1 o/p
Transmitters TX2 B6 O — Single-ended transmitter2 o/p
TX3 B8 O — Single-ended transmitter3 o/p
RX1 M2 I — Single-ended receiver1 i/p
RX2 K2 I — Single-ended receiver2 i/p
Receivers
RX3 H2 I — Single-ended receiver3 i/p
RX4 F2 I — Single-ended receiver4 i/p
LVDS_TXP[0] G15 O —
Differential data Out – Lane 0
LVDS_TXM[0] G14 O —
LVDS_CLKP J15 O —
Differential clock Out
LVDS_CLKM J14 O —
LVDS_TXP[1] H15 O —
Differential data Out – Lane 1
LVDS_TXM[1] H14 O —
HS_RESERVED_TX
K15 O —
P[2]
Differential data Out – Lane 2
LVDS TX HS_RESERVED_TX
K14 O —
M[2]
HS_RESERVED_TX
L15 O —
P[3]
Differential data Out – Lane 3
HS_RESERVED_TX
L14 O —
M[3]
LVDS_FRCLKP M15 O —
Differential debug port 1
LVDS_FRCLKM M14 O —
HS_DEBUG2_P N15 O —
Differential debug port 2
HS_DEBUG2_M N14 O —
B1, B15, D1,
RESERVED —
D15
Reference clock output from clocking subsystem
Reference clock OSC_CLKOUT A14 O — after cleanup PLL. Can be used by peripheral chip
in multichip cascading

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PIN PIN DEFAULT PULL


FUNCTION SIGNAL NAME DESCRIPTION
NUMBER TYPE STATUS(1)
Low-frequency frame synchronization signal output.
SYNC_OUT P11 O Pull Down Can be used by peripheral chip in multichip
System cascading
synchronization Low-frequency frame synchronization signal input.
SYNC_IN N10 I Pull Down This signal could also be used as a hardware trigger
for frame start

SPI control SPI_CS_1 R7 I Pull Up SPI chip select


interface from SPI_CLK_1 R9 I Pull Down SPI clock
external MCU
MOSI_1 R8 I Pull Up SPI data input
(default
peripheral MISO_1 P5 O Pull Up SPI data output
mode) SPI_HOST_INTR_1 P6 O Pull Down SPI interrupt to host
R3, R4, R5,
RESERVED —
P4
NRESET P12 I — Power on reset for chip. Active low

Reset Open-drain fail-safe warm reset signal. Can be


WARM_RESET N12 IO Open Drain driven from PMIC for diagnostic or can be used as
status signal that the device is going through reset.
Open-drain fail-safe output signal. Connected to
PMIC/Processor/MCU to indicate that some severe
NERROR_OUT N8 O Open Drain
criticality fault has happened. Recovery would be
through reset.
Safety
Fail-safe input to the device. Error output from
any other device can be concentrated in the error
NERROR_IN P7 I Open Drain
signaling monitor module inside the device and
appropriate action can be taken by firmware
TMS L13 I Pull Up
TCK M13 I Pull Down
JTAG JTAG port for standard boundary scan
TDI H13 I Pull Up
TDO J13 O —
In XTAL mode: Input for the reference crystal
CLKP E14 I — In External clock mode: Single ended input
Reference reference clock port
oscillator In XTAL mode: Feedback drive for the reference
CLKM F14 O — crystal
In External clock mode: Connect this port to ground
Band-gap
VBGAP B10 O —
voltage

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PIN PIN DEFAULT PULL


FUNCTION SIGNAL NAME DESCRIPTION
NUMBER TYPE STATUS(1)
F13,N11,P15
VDDIN POW — 1.2-V digital power supply
,R6
VIN_SRAM R14 POW — 1.2-V power rail for internal SRAM
VNWA P14 POW — 1.2-V power rail for SRAM array back bias
I/O supply (3.3-V or 1.8-V): All CMOS I/Os would
VIOIN R13 POW —
operate on this supply.
VIOIN_18 K13 POW — 1.8-V supply for CMOS IO
VIN_18CLK B11 POW — 1.8-V supply for clock module
VIOIN_18DIFF D13 POW — 1.8-V supply for high speed interface port
Reserved G13 POW — No connect
VIN_13RF1 G5,J5,H5 POW — 1.3-V Analog and RF supply,VIN_13RF1 and
VIN_13RF2 C2,D2 POW — VIN_13RF2 could be shorted on the board

VIN_18BB K5,F5 POW — 1.8-V Analog baseband power supply


VIN_18VCO B12 POW — 1.8-V RF VCO supply
E5,E6,E8,E1
Power supply 0,E11,F9,F1
1,G6,G7,G8,
G10,H7,H9,
VSS H11,J6,J7,J8 GND — Digital ground
,J10,K7,K8,K
9,K10,K11,L
5,L6,L8,L10,
R15
A1,A3,A5,A7
,A9,A15,B3,
B5,B7,B9,B1
3,B14,C1,C3
,C4,C5,C6,C
7,C8,C9,C15
VSSA ,E1,E2,E3,E GND — Analog ground
13,E15,F3,G
1,G2,G3,H3,
J1,J2,J3,K3,
L1,L2,L3,
M3,N1,N2,N
3,R1
VOUT_14APLL A10 O —
Internal LDO
VOUT_14SYNTH A13 O —
output/inputs
VOUT_PA A2,B2 O —
PMIC_CLK_OUT P13 O — Dithered clock input to PMIC
External clock
out Programmable clock given out to external MCU or
MCU_CLK_OUT N9 O —
the processor
GPIO[0] N4 IO Pull Down General-purpose IO
General-
GPIO[1] N7 IO Pull Down General-purpose IO
purpose I/Os
GPIO[2] N13 IO Pull Down General-purpose IO
Chip-select output from the device. Device is a
QSPI_CS P8 O Pull Up
controller connected to serial flash peripheral.
Clock output from the device. Device is a controller
QSPI_CLK R10 O Pull Down
connected to serial flash peripheral.
QSPI for Serial
Flash(2) QSPI[0] R11 IO Pull Down Data IN/OUT
QSPI[1] P9 IO Pull Down Data IN/OUT
QSPI[2] R12 IO Pull Up Data IN/OUT
QSPI[3] P10 IO Pull Up Data IN/OUT

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PIN PIN DEFAULT PULL


FUNCTION SIGNAL NAME DESCRIPTION
NUMBER TYPE STATUS(1)
Flash RS232_TX N6 O Pull Down
programming UART pins for programming external flash in
and RS232 RS232_RX N5 I Pull Up preproduction/debug hardware.
UART(2)
Analog Test1 /
P1 IO — GP ADC channel 1
GPADC1
Test and Debug
output for Analog Test2 /
P2 IO — GP ADC channel 2
preproduction GPADC2
phase. Can be Analog Test3 /
pinned out on P3 IO — GP ADC channel 3
GPADC3
production
hardware for Analog Test4 R2 IO — GP ADC channel 4
field debug ANAMUX / GPADC5 C13 IO — GP ADC channel 5
VSENSE / GPADC6 C14 IO — GP ADC channel 6

(1) Status of PULL structures associated with the IO after device POWER UP.
(2) This option is for development/debug in preproduction phase. Can be disabled by firmware pin mux setting.

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7.3 Pin Multiplexing


Table 7-1. Pin Multiplexing
PAD STATE
DIGITAL PIN FUNCTION
REGISTER nReset = 0 [ASSERTED]
PIN NAME PIN MUX CONFIG
ADDRESS(1) INTERNAL WEAK
VALUE [Bits3:0] SIGNAL NAME SIGNAL DESCRIPTION SIGNAL TYPE STATE
PULL STATE
0 GPIO_12 General Purpose IO IO Hi-Z Weak Pull Down
EA00h GPIO_12 P6
1 SPI_HOST1_INTR General Purpose IO [AWR14xx] O
0 GPIO_13 General Purpose IO IO Hi-Z Weak Pull Down
EA04h GPIO_0 N4 1 GPIO_0 General Purpose IO IO
2 PMIC_CLKOUT Dithered Clock Output for PMIC O
0 GPIO_16 General Purpose IO IO Hi-Z Weak Pull Down
1 GPIO_1 General Purpose IO IO
EA08h GPIO_1 N7
Low Frequency Synchronization
2 SYNC_OUT O
Signal output
0 GPIO_19 General Purpose IO IO Hi-Z Weak Pull Up
EA0Ch MOSI_1 R8 1 MOSI_1 SPI Channel#1 Data Input IO
2 CAN_RX CAN Interface I
0 GPIO_20 General Purpose IO IO Hi-Z Weak Pull Up
EA10h MISO_1 P5 1 MISO_1 SPI Channel#1 Data Output IO
2 CAN_TX CAN Interface O
0 GPIO_3 General Purpose IO IO Hi-Z Weak Pull Up
EA14h SPI_CLK_1 R9 1 SPI_CLK_1 SPI Channel#1 Clock IO
RCOSC_CLK O
0 GPIO_30 General Purpose IO IO Hi-Z Weak Pull Up
EA18h SPI_CS_1 R7 1 SPI_CS_1 SPI Channel#1 Chip Select IO
RCOSC_CLK O
0 GPIO_21 General Purpose IO IO Hi-Z
EA1Ch MOSI_2 R3 1 MOSI_2 SPI Channel#2 Data Input IO
2 I2C_SDA I2C Data IO
0 GPIO_22 General Purpose IO IO Hi-Z
EA20h MISO_2 P4 1 MISO_2 SPI Channel#2 Data Output IO
2 I2C_SCL I2C Clock IO

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Table 7-1. Pin Multiplexing (continued)


PAD STATE
DIGITAL PIN FUNCTION
REGISTER nReset = 0 [ASSERTED]
PIN NAME PIN MUX CONFIG
ADDRESS(1) INTERNAL WEAK
VALUE [Bits3:0] SIGNAL NAME SIGNAL DESCRIPTION SIGNAL TYPE STATE
PULL STATE
0 GPIO_5 General Purpose IO IO Hi-Z
1 SPI_CLK_2 SPI Channel#2 Clock IO
EA24h SPI_CLK_2 R5 MSS_UARTA_RX IO
6 MSS_UARTB_TX Debug: Firmware Trace O
7 BSS_UART_TX Debug: Firmware Trace O
0 GPIO_4 General Purpose IO IO Hi-Z
1 SPI_CS_2 SPI Channel#2 Chip Select IO
EA28h SPI_CS_2 R4 MSS_UARTA_TX IO
6 MSS_UARTB_TX Debug: Firmware Trace O
7 BSS_UART_TX Debug: Firmware Trace O
0 GPIO_8 General Purpose IO IO Hi-Z Weak Pull Down
EA2Ch QSPI[0] R11 1 QSPI[0] QSPI Data IN/OUT IO
2 MISO_2 SPI Channel#1 Data Output IO
0 GPIO_9 General Purpose IO IO Hi-Z Weak Pull Down
EA30h QSPI[1] P9 1 QSPI[1] QSPI Data IN/OUT IO
2 MOSI_2 SPI Channel#2 Data Input IO
0 GPIO_10 General Purpose IO IO Hi-Z Weak Pull Down
EA34h QSPI[2] R12
1 QSPI[2] QSPI Data IN/OUT IO
0 GPIO_11 General Purpose IO IO Hi-Z Weak Pull Down
EA38h QSPI[3] P10
1 QSPI[3] QSPI Data IN/OUT I
0 GPIO_7 General Purpose IO IO Hi-Z Weak Pull Down
QSPI Clock output from the device.
EA3Ch QSPI_CLK R10 1 QSPI_CLK Device operates as a master with O
the serial flash being a slave
2 SPI_CLK_2 SPI Channel#2 Clock IO
0 GPIO_6 General Purpose IO IO Hi-Z Weak Pull Up
QSPI Chip Select output from the
device.
EA40h QSPI_CS P8 1 QSPI_CS O
Device operates as a master with
the serial flash being a slave
2 SPI_CS_2 SPI Channel#2 Chip Select IO

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Table 7-1. Pin Multiplexing (continued)


PAD STATE
DIGITAL PIN FUNCTION
REGISTER nReset = 0 [ASSERTED]
PIN NAME PIN MUX CONFIG
ADDRESS(1) INTERNAL WEAK
VALUE [Bits3:0] SIGNAL NAME SIGNAL DESCRIPTION SIGNAL TYPE STATE
PULL STATE
Failsafe input to the device. Nerror
output from any other device can be
concentrated in the error signaling
NERROR_IN P7 NERROR_IN I Hi-Z
monitor module inside the device
and appropriate action can be taken
by Firmware
Open drain fail safe warm reset
signal. Can be driven from PMIC
WARM_RESET N12 WARM_RESET for diagnostic or can be used as IO Hi-Z Input Open Drain
status signal that the device is going
through reset.
Open drain fail safe output signal.
Connected to PMIC/Processor/MCU
NERROR_OUT N8 NERROR_OUT to indicate that some severe O Hi-Z Open Drain
criticality fault has happened.
Recovery would be through reset.
0 GPIO_17 General Purpose IO IO Hi-Z Weak Pull Down
1 TCK JTAG Clock I
EA50h TCK M13
2 MSS_UARTB_TX Debug: Firmware Trace O
6 BSS_UART_RX Debug: Firmware Trace I
0 GPIO_18 General Purpose IO IO Hi-Z Weak Pull Up
EA54h TMS L13 1 TMS JTAG Test Mode Select IO
2 BSS_UART_TX Debug: Firmware Trace O
0 GPIO_23 General Purpose IO IO Hi-Z Weak Pull Up
EA58h TDI H13 1 TDI JTAG Test Data In I
MSS_UARTA_RX IO
0 GPIO_24 General Purpose IO IO Hi-Z
1 TDO JTAG Test Data Out O
MSS_UARTA_TX IO
EA5Ch TDO J13 6 MSS_UARTB_TX Debug: Firmware Trace O
BSS_UART_TX Debug: Firmware Trace O
7 Sense On Power [Reset] Line
SOP0 I
Impacts boot mode

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Table 7-1. Pin Multiplexing (continued)


PAD STATE
DIGITAL PIN FUNCTION
REGISTER nReset = 0 [ASSERTED]
PIN NAME PIN MUX CONFIG
ADDRESS(1) INTERNAL WEAK
VALUE [Bits3:0] SIGNAL NAME SIGNAL DESCRIPTION SIGNAL TYPE STATE
PULL STATE
0 GPIO_25 General Purpose IO IO Hi-Z Weak Pull Down
Programmable clock given out to
EA60h MCU_CLKOUT N9 1 MCU_CLKOUT O
external MCU or the processor
10 BSS_UART_RX Debug: Firmware Trace I
0 GPIO_26 General Purpose IO IO Hi-Z Weak Pull Down
1 GPIO_2 General Purpose IO IO
7 MSS_UARTB_TX Debug: Firmware Trace O
EA64h GPIO_2 N13 8 BSS_UART_TX Debug: Firmware Trace O
Low frequency Synchronization
9 SYNC_OUT O
signal output
10 PMIC_CLKOUT Dithered clock input to PMIC O
0 GPIO_27 General Purpose IO IO Hi-Z Weak Pull Down
1 PMIC_CLKOUT Dithered Clock Output for PMIC O
EA68h PMIC_CLKOUT P13
Sense On Power [Reset] Line
SOP2 I
Impacts boot mode
0 GPIO_28 General Purpose IO IO Hi-Z Weak Pull Down
Low frequency Synchronization
EA6Ch SYNC_IN N10 1 SYNC_IN I
signal input
6 MSS_UARTB_RX Debug: Firmware Trace I
0 GPIO_29 General Purpose IO IO Hi-Z Weak Pull Down
Low frequency Synchronization
1 SYNC_OUT O
signal output
EA70h SYNC_OUT P11
RCOSC_CLK O
Sense On Power [Reset] Line
SOP1 I
Impacts boot mode
0 GPIO_15 General Purpose IO IO Hi-Z Weak Pull Up
1 RS232_RX Debug: Firmware load to RAM IO
FLASH Programming
EA74h RS232_RX N5 2 MSS_UARTA_RX I
Bootloader Controlled
6 BSS_UART_TX Debug: Firmware Trace O
7 MSS_UARTB_RX Debug: Firmware Trace I

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Table 7-1. Pin Multiplexing (continued)


PAD STATE
DIGITAL PIN FUNCTION
REGISTER nReset = 0 [ASSERTED]
PIN NAME PIN MUX CONFIG
ADDRESS(1) INTERNAL WEAK
VALUE [Bits3:0] SIGNAL NAME SIGNAL DESCRIPTION SIGNAL TYPE STATE
PULL STATE
0 GPIO_14 General Purpose IO IO
1 RS232_TX Debug: Firmware load to RAM IO
FLASH Programming
EA78h RS232_TX N6 5 MSS_UARTA_TX O
Bootloader Controlled
6 MSS_UARTB_TX Debug: Firmware Trace O
7 BSS_UART_TX Debug: Firmware Trace O

(1) Register addresses are of the form FFFF XXXXh, where XXXX is listed here.

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8 Specifications
8.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
PARAMETERS(1) (2) MIN MAX UNIT
VDDIN 1.2 V digital power supply –0.5 1.4 V
VIN_SRAM 1.2 V power rail for internal SRAM –0.5 1.4 V
VNWA 1.2 V power rail for SRAM array back bias –0.5 1.4 V
I/O supply (3.3 V or 1.8 V): All CMOS I/Os would operate on this
VIOIN –0.5 3.8 V
supply.
VIOIN_18 1.8 V supply for CMOS IO –0.5 2 V
VIN_18CLK 1.8 V supply for clock module –0.5 2 V
VIN_13RF1 1.3 V Analog and RF supply, VIN_13RF1 and VIN_13RF2 could
–0.5 1.45 V
VIN_13RF2 be shorted on the board.

VIN_13RF1 1-V Internal LDO bypass mode. Device supports mode


where external Power Management block can supply 1 V on
–0.5 1.4 V
VIN_13RF2 VIN_13RF1 and VIN_13RF2 rails. In this configuration, the
internal LDO of the device would be kept bypassed.
VIN_18BB 1.8-V Analog baseband power supply –0.5 2 V
VIN_18VCO supply 1.8-V RF VCO supply –0.5 2 V
RX1-4 Externally applied power on RF inputs 10 dBm
TX1-3 Externally applied power on RF outputs(3) 10 dBm
Dual-voltage LVCMOS inputs, 3.3 V or 1.8 V (Steady State) –0.3V VIOIN + 0.3
Input and output
Dual-voltage LVCMOS inputs, operated at 3.3 V/1.8 V VIOIN + 20% up to V
voltage range
(Transient Overshoot/Undershoot) or external oscillator input 20% of signal period
CLKP, CLKM Input ports for reference crystal –0.5 2 V
Input or Output Voltages 0.3 V above or below their respective
Clamp current power rails. Limit clamp current that flows through the internal –20 20 mA
diode protection cells of the I/O.
TJ Operating junction temperature range –40 125 °C
TSTG Storage temperature range after soldered onto PC board –55 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS, unless otherwise noted.
(3) This value is for an externally applied signal level on the TX. Additionally, a reflection coefficient up to Gamma = 1 can be applied on
the TX output.

8.2 ESD Ratings


VALUE UNIT
Human-body model (HBM), per AEC Q100-002(1) ±2000
V(ESD) Electrostatic discharge Charged-device model (CDM), per AEC ±500 V
Q100-011 Corner pins ±750

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

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8.3 Power-On Hours (POH)


JUNCTION
OPERATING
TEMPERATURE (Tj) NOMINAL CVDD VOLTAGE (V) POWER-ON HOURS [POH] (HOURS)
(1) (2) CONDITION

–40°C 600 (6%)


75°C 2000 (20%)
100% duty cycle 1.2
95°C 6500 (65%)
125°C 900 (9%)

(1) This information is provided solely for your convenience and does not extend or modify the warranty provided under TI's standard
terms and conditions for TI semiconductor products.
(2) The specified POH are applicable with max Tx output power settings using the default firmware gain tables. The specified POH would
not be applicable, if the Tx gain table is overwritten using an API.

8.4 Recommended Operating Conditions


over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VDDIN 1.2 V digital power supply 1.14 1.2 1.32 V
VIN_SRAM 1.2 V power rail for internal SRAM 1.14 1.2 1.32 V
VNWA 1.2 V power rail for SRAM array back bias 1.14 1.2 1.32 V

I/O supply (3.3 V or 1.8 V): 3.135 3.3 3.465


VIOIN V
All CMOS I/Os would operate on this supply. 1.71 1.8 1.89
VIOIN_18 1.8 V supply for CMOS IO 1.71 1.8 1.9 V
VIN_18CLK 1.8 V supply for clock module 1.71 1.8 1.9 V
VIN_13RF1 1.3 V Analog and RF supply. VIN_13RF1 and VIN_13RF2
1.23 1.3 1.36 V
VIN_13RF2 could be shorted on the board

VIN_13RF1
(1-V Internal LDO
bypass mode)
0.95 1 1.05 V
VIN_13RF2
(1-V Internal LDO
bypass mode)
VIN18BB 1.8-V Analog baseband power supply 1.71 1.8 1.9 V
VIN_18VCO 1.8V RF VCO supply 1.71 1.8 1.9 V
Voltage Input High (1.8 V mode) 1.17
VIH V
Voltage Input High (3.3 V mode) 2.25
Voltage Input Low (1.8 V mode) 0.3*VIOIN
VIL V
Voltage Input Low (3.3 V mode) 0.62
VOH High-level output threshold (IOH = 6 mA) VIOIN – 450 mV
VOL Low-level output threshold (IOL = 6 mA) 450 mV
VIL (1.8V Mode) 0.2

NRESET VIH (1.8V Mode) 0.96


V
SOP[2:0] VIL (3.3V Mode) 0.3
VIH (3.3V Mode) 1.57

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8.5 Power Supply Specifications


Table 8-1 describes the four rails from an external power supply block of the AWR1443 device.
Table 8-1. Power Supply Rails Characteristics
SUPPLY DEVICE BLOCKS POWERED FROM THE SUPPLY RELEVANT IOS IN THE DEVICE
Input: VIN_18VCO, VIN18CLK, VIN_18BB,
Synthesizer and APLL VCOs, crystal oscillator, IF
1.8 V VIOIN_18DIFF, VIOIN_18
Amplifier stages, ADC, LVDS
LDO Output: VOUT_14SYNTH, VOUT_14APLL
1.3 V (or 1 V in internal Power Amplifier, Low Noise Amplifier, Mixers and LO Input: VIN_13RF2, VIN_13RF1
LDO bypass mode)(1) Distribution LDO Output: VOUT_PA
3.3 V (or 1.8 V for 1.8 V
Digital I/Os Input VIOIN
I/O mode)
1.2 V Core Digital and SRAMs Input: VDDIN, VIN_SRAM

(1) Three simultaneous transmitter operation is supported only in 1-V LDO bypass and PA LDO disable mode. In this mode 1V supply
needs to be fed on the VOUT PA pin.

The 1.3-V (1.0 V) and 1.8-V power supply ripple specifications mentioned in are defined to meet a target spur
level of –105 dBc (RF Pin = –15 dBm) at the RX. The spur and ripple levels have a dB-to-dB relationship, for
example, a 1-dB increase in supply ripple leads to a ~1 dB increase in spur level. Values quoted are rms levels
for a sinusoidal input applied at the specified frequency.
Table 8-2. Ripple Specifications
RF RAIL VCO/IF RAIL
FREQUENCY (kHz) 1.0 V (INTERNAL LDO BYPASS)
1.3 V (µVRMS) 1.8 V (µVRMS)
(µVRMS)
137.5 7 648 83
275 5 76 21
550 3 22 11
1100 2 4 6
2200 11 82 13
4400 13 93 19
6600 22 117 29

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8.6 Power Consumption Summary


Table 8-3 and Table 8-4 summarize the power consumption at the power terminals.
Table 8-3. Maximum Current Ratings at Power Terminals
PARAMETER SUPPLY NAME DESCRIPTION MIN TYP MAX UNIT
Total current drawn by all
VDDIN, VIN_SRAM, VNWA 500
nodes driven by 1.2V rail
Total current drawn by all
VIN_13RF1, VIN_13RF2 2000
nodes driven by 1.3V rail

Current consumption(1) VIOIN_18, VIN_18CLK, mA


Total current drawn by all
VIOIN_18DIFF, VIN_18BB, 850
nodes driven by 1.8V rail
VIN_18VCO
Total current drawn by
VIOIN all nodes driven by 3.3V 50
rail(2)

(1) The specified current values are at typical supply voltage level.
(2) The exact VIOIN current depends on the peripherals used and their frequency of operation.

Table 8-4. Average Power Consumption at Power Terminals


PARAMETER CONDITION DESCRIPTION MIN TYP MAX UNIT
1.0-V internal 1TX, 4RX 1.72
LDO bypass Sampling: 16.66 MSps complex
mode 2TX, 4RX Transceiver, 40-ms frame time, 512 1.89
Average power
chirps, 512 samples/chirp, 8.5-μs W
consumption 1.3-V internal 1TX, 4RX 1.90
interchirp time (50% duty cycle)
LDO enabled Data Port: MIPI-CSI-2
mode 2TX, 4RX 2.10

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8.7 RF Specification
over recommended operating conditions (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
76 to 77 GHz 14
Noise figure dB
77 to 81 GHz 15
1-dB compression point (Out Of Band)(1) –8 dBm
Maximum gain 48 dB
Gain range 24 dB
Gain step size 2 dB
Image Rejection Ratio (IMRR) 30 dB
IF bandwidth(2) 5 MHz
ADC sampling rate (real/complex 2x) 12.5 Msps
ADC sampling rate (complex 1x) 6.25 Msps
Receiver
ADC resolution 12 Bits
Return loss (S11) <–10 dB
Gain mismatch variation (over temperature) ±0.5 dB
Phase mismatch variation (over temperature) ±3 °
RX gain = 30dB
In-band IIP2 IF = 1.5, 2 MHz at 16 dBm
–12 dBFS
RX gain = 24dB
Out-of-band IIP2 IF = 10 kHz at -10dBm, 24 dBm
1.9 MHz at -30 dBm
Idle Channel Spurs –90 dBFS
Output power 12 dBm
Transmitter
Amplitude noise –145 dBc/Hz
Frequency range 76 81 GHz

Clock Ramp rate 100 MHz/µs


subsystem 76 to 77 GHz –95
Phase noise at 1-MHz offset dBc/Hz
77 to 81 GHz –93

(1) 1-dB Compression Point (Out Of Band) is measured by feed a Continuous wave Tone (10 kHz) well below the lowest HPF cut-off
frequency.
(2) The analog IF stages include high-pass filtering, with two independently configurable first-order high-pass corner frequencies. The set
of available HPF corners is summarized as follows:
Available HPF Corner Frequencies (kHz)
HPF1 HPF2
175, 235, 350, 700 350, 700, 1400, 2800

The filtering performed by the digital baseband chain is targeted to provide:


• Less than ±0.5 dB pass-band ripple/droop, and
• Better than 60 dB anti-aliasing attenuation for any frequency that can alias back into the pass-band.

Figure 8-1 shows variations of noise figure and in-band P1dB parameters with respect to receiver gain
programmed.

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18 -18
NF (dB)
In-band P1DB (dBm)
16 -24

In-band P1DB (dBm)


14 -30

NF (dB)
12 -36

10 -42

8 -48
30 32 34 36 38 40 42 44 46 48
RX Gain (dB)

Figure 8-1. Noise Figure, In-band P1dB vs Receiver Gain

8.8 Thermal Resistance Characteristics for FCBGA Package [ABL0161]

THERMAL METRICS(1) °C/W(2) (3)


RΘJC Junction-to-case 5
RΘJB Junction-to-board 5.9
RΘJA Junction-to-free air 21.6
RΘJMA Junction-to-moving air 15.3 (4)
PsiJT Junction-to-package top 0.69
PsiJB Junction-to-board 5.8

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
(2) °C/W = degrees Celsius per watt.
(3) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘJC] value, which is based on
a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these
EIA/JEDEC standards:
• JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
• JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
• JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
• JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
(4) Air flow = 1 m/s

8.9 Timing and Switching Characteristics


8.9.1 Power Supply Sequencing and Reset Timing
The AWR1443 device expects all external voltage rails to be stable before reset is deasserted. Figure 8-2
describes the device wake-up sequence.

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SOP
Setup DC power SOP
Time Stable before MSS nRESET DC
DC Hold time to QSPI
BOOT ASSERT Power
Power nRESET nRESET READ
START tPGDEL notOK
OK release

VDDIN,
VIN_SRAM
VNWA

VIOIN_18
VIN18_CLK
VIOIN_18DIFF
VIN18_BB

VIN_13RF1
VIN_13RF2

VIOIN

SOP[2.1.0]

nRESET Warm reset


delay for crystal
WARMRESET or ext osc
OUTPUT

VBGAP
OUTPUT

CLKP, CLKM
Using Crystal

MCUCLK
OUTPUT (1)

QSPI_CS 7ms (XTAL Mode)


OUTPUT
500 µs (REFCLK Mode)

A. MCU_CLK_OUT in autonomous mode, where AWR1443 application is booted from the serial flash, MCU_CLK_OUT is not enabled by
default by the device bootloader.

Figure 8-2. Device Wake-up Sequence

8.9.2 Synchronized Frame Triggering


The AWR1443 device supports a hardware based mechanism to trigger radar frames. An external host can
pulse the SYNC_IN signal to start radar frames. The typical time difference between the rising edge of
the external pulse and the frame transmission on air (Tlag) is about 160 ns. There is also an additional
programmable delay that the user can set to control the frame start time.

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Tactive_frame

SYNC_IN
(Hardware
Trigger)
Radar
Frames

Tpulse

Tlag
Frame-1 Frame-2

Figure 8-3. Sync In Hardware Trigger

Table 8-5. Frame Trigger Timing


PARAMETER DESCRIPTION MIN MAX UNIT
Tactive_frame Active frame duration User defined
ns
Tpulse 25 4000

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8.9.3 Input Clocks and Oscillators


8.9.3.1 Clock Specifications
An external crystal is connected to the device pins. Figure 8-4 shows the crystal implementation.

Cf1
CLKP
Cp 40 MHz
CLKM
Cf2

Figure 8-4. Crystal Implementation

Note
The load capacitors, Cf1 and Cf2 in Figure 8-4, should be chosen such that Equation 1 is satisfied.
CL in the equation is the load specified by the crystal manufacturer. All discrete components used
to implement the oscillator circuit should be placed as close as possible to the associated oscillator
CLKP and CLKM pins.Note that Cf1 and Cf2 include the parasitic capacitances due to PCB routing.

C f2
C L = C f1 ´ +CP
C f1 + C f 2 (1)

Table 8-6 lists the electrical characteristics of the clock crystal.


Table 8-6. Crystal Electrical Characteristics (Oscillator Mode)
NAME DESCRIPTION MIN TYP MAX UNIT
fP Parallel resonance crystal frequency 40 MHz
CL Crystal load capacitance 5 8 12 pF
ESR Crystal ESR 50 Ω
Temperature range Expected temperature range of operation –40 125 °C
Frequency
Crystal frequency tolerance(1) (2) –200 200 ppm
tolerance
Drive level 50 200 µW

(1) The crystal manufacturer's specification must satisfy this requirement.


(2) Includes initial tolerance of the crystal, drift over temperature, aging and frequency pulling due to incorrect load capacitance.

In the case where an external clock is used as the clock resource, the signal is fed to the CLKP pin only; CLKM
is grounded. The phase noise requirement is very important when a 40-MHz clock is fed externally. Table 8-7
lists the electrical characteristics of the external clock signal.

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Table 8-7. External Clock Mode Specifications


SPECIFICATION
PARAMETER UNIT
MIN TYP MAX
Frequency 40 MHz
AC-Amplitude 700 1200 mV (pp)
DC-trise/fall 10 ns
Input Clock: Phase Noise at 1 kHz –132 dBc/Hz
External AC-coupled sine wave or DC-
Phase Noise at 10 kHz –143 dBc/Hz
coupled square wave
Phase Noise referred to 40 MHz Phase Noise at 100 kHz –152 dBc/Hz
Phase Noise at 1 MHz –153 dBc/Hz
Duty Cycle 35 65 %
Freq Tolerance –100 100 ppm

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8.9.4 Multibuffered / Standard Serial Peripheral Interface (MibSPI)


8.9.4.1 Peripheral Description
The SPI uses a MibSPI Protocol by TI.
The MibSPI/SPI is a high-speed synchronous serial input/output port that allows a serial bit stream of
programmed length (2 to 16 bits) to be shifted into and out of the device at a programmed bit-transfer rate.
The MibSPI/SPI is normally used for communication between the microcontroller and external peripherals or
another microcontroller.
Standard and MibSPI modules have the following features:
• 16-bit shift register
• Receive buffer register
• 8-bit baud clock generator
• SPICLK can be internally-generated (controller mode) or received from an external clock source
(peripheral mode)
• Each word transferred can have a unique format.
• SPI I/Os not used in the communication can be used as digital input/output signals
8.9.4.2 MibSPI Transmit and Receive RAM Organization
The Multibuffer RAM is comprised of 256 buffers. Each entry in the Multibuffer RAM consists of 4 parts: a 16-bit
transmit field, a 16-bit receive field, a 16-bit control field and a 16-bit status field. The Multibuffer RAM can be
partitioned into multiple transfer group with variable number of buffers each.
Section 8.9.4.2.2 and Section 8.9.4.2.3 assume the operating conditions stated in Section 8.9.4.2.1.
8.9.4.2.1 SPI Timing Conditions

MIN TYP MAX UNIT


Input Conditions
tR Input rise time 1 3 ns
tF Input fall time 1 3 ns
Output Conditions
CLOAD Output load capacitance 2 15 pF

8.9.4.2.2 SPI Controller Mode Switching Parameters (CLOCK PHASE = 0, SPICLK = output,
SPISIMO = output, and SPISOMI = input)(1) (2) (3)

NO. PARAMETER MIN TYP MAX UNIT


1 tc(SPC)M Cycle time, SPICLK(4) 25 256tc(VCLK) ns
tw(SPCH)M Pulse duration, SPICLK high (clock polarity = 0) 0.5tc(SPC)M – 4 0.5tc(SPC)M + 4
2(4) ns
tw(SPCL)M Pulse duration, SPICLK low (clock polarity = 1) 0.5tc(SPC)M – 4 0.5tc(SPC)M + 4
tw(SPCL)M Pulse duration, SPICLK low (clock polarity = 0) 0.5tc(SPC)M – 4 0.5tc(SPC)M + 4
3(4) ns
tw(SPCH)M Pulse duration, SPICLK high (clock polarity = 1) 0.5tc(SPC)M – 4 0.5tc(SPC)M + 4
td(SPCH- Delay time, SPISIMO valid before SPICLK low, (clock 0.5tc(SPC)M – 3
SIMO)M polarity = 0)
4(4) ns
td(SPCL- Delay time, SPISIMO valid before SPICLK high, (clock 0.5tc(SPC)M – 3
SIMO)M polarity = 1)
tv(SPCL- Valid time, SPISIMO data valid after SPICLK low, (clock 0.5tc(SPC)M –
SIMO)M polarity = 0) 10.5
5(4) ns
tv(SPCH- Valid time, SPISIMO data valid after SPICLK high, (clock 0.5tc(SPC)M –
SIMO)M polarity = 1) 10.5

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NO. PARAMETER MIN TYP MAX UNIT


CSHOLD = 0 (C2TDELAY+2)* (C2TDELAY+2)
Setup time CS active until SPICLK tc(VCLK) – 7.5 * tc(VCLK) + 7
high
(clock polarity = 0) CSHOLD = 1 (C2TDELAY +3) (C2TDELAY+3)
* tc(VCLK) – 7.5 * tc(VCLK) + 7
6(5) tC2TDELAY ns
CSHOLD = 0 (C2TDELAY+2)* (C2TDELAY+2)
Setup time CS active until SPICLK low tc(VCLK) – 7.5 * tc(VCLK) + 7
(clock polarity = 1) CSHOLD = 1 (C2TDELAY +3) (C2TDELAY+3)
* tc(VCLK) – 7.5 * tc(VCLK) + 7
Hold time, SPICLK low until CS inactive (clock polarity = 0) 0.5*tc(SPC)M + 0.5*tc(SPC)M +
(T2CDELAY + (T2CDELAY +
1) *tc(VCLK) – 7 1) * tc(VCLK) +
7.5
7(5) tT2CDELAY ns
Hold time, SPICLK high until CS inactive (clock polarity = 1) 0.5*tc(SPC)M + 0.5*tc(SPC)M +
(T2CDELAY + (T2CDELAY +
1) *tc(VCLK) – 7 1) * tc(VCLK) +
7.5
tsu(SOMI- Setup time, SPISOMI before SPICLK low
5
SPCL)M (clock polarity = 0)
8(4) ns
tsu(SOMI- Setup time, SPISOMI before SPICLK high
5
SPCH)M (clock polarity = 1)
th(SPCL- Hold time, SPISOMI data valid after SPICLK low
3
SOMI)M (clock polarity = 0)
9(4) ns
th(SPCH- Hold time, SPISOMI data valid after SPICLK high
3
SOMI)M (clock polarity = 1)

(1) The MASTER bit (SPIGCRx.0) is set and the CLOCK PHASE bit (SPIFMTx.16) is cleared (where x= 0 or 1).
(2) tc(MSS_VCLK) = main subsystem clock time = 1 / f(MSS_VCLK). For more details, see the Technical Reference Manual.
(3) When the SPI is in Controller mode, the following must be true: For PS values from 1 to 255: tc(SPC)M ≥ (PS +1)tc(MSS_VCLK) ≥ 25ns,
where PS is the prescale value set in the SPIFMTx.[15:8] register bits. For PS values of 0: tc(SPC)M = 2tc(MSS_VCLK) ≥ 25ns.
(4) The active edge of the SPICLK signal referenced is controlled by the CLOCK POLARITY bit (SPIFMTx.17).
(5) C2TDELAY and T2CDELAY is programmed in the SPIDELAY register

SPICLK
(clock polarity = 0)
2
1

3
SPICLK
(clock polarity = 1

4 5

SPISIMO Master Out Data Is Valid

1
8
9

SPISOMI Master In Data


Must Be Valid

Figure 8-5. SPI Controller Mode External Timing (CLOCK PHASE = 0)

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Write to buffer

SPICLK
(clock polarity=0)

SPICLK
(clock polarity=1)

SPISIMO Master Out Data Is Valid

6 7
SPICSn

Figure 8-6. SPI Controller Mode Chip Select Timing (CLOCK PHASE = 0)

8.9.4.2.3 SPI Controller Mode Switching Parameters (CLOCK PHASE = 1, SPICLK = output,
SPISIMO = output, and SPISOMI = input)(1) (2) (3)

NO. PARAMETER MIN TYP MAX UNIT


1 tc(SPC)M Cycle time, SPICLK(4) 25 256tc(VCLK) ns
tw(SPCH)M Pulse duration, SPICLK high (clock polarity = 0) 0.5tc(SPC)M – 4 0.5tc(SPC)M + 4
2(4) ns
tw(SPCL)M Pulse duration, SPICLK low (clock polarity = 1) 0.5tc(SPC)M – 4 0.5tc(SPC)M + 4
tw(SPCL)M Pulse duration, SPICLK low (clock polarity = 0) 0.5tc(SPC)M – 4 0.5tc(SPC)M + 4
3(4) ns
tw(SPCH)M Pulse duration, SPICLK high (clock polarity = 1) 0.5tc(SPC)M – 4 0.5tc(SPC)M + 4
td(SPCH- Delay time, SPISIMO valid before SPICLK low, (clock polarity 0.5tc(SPC)M – 3
SIMO)M = 0)
4(4) ns
td(SPCL- Delay time, SPISIMO valid before SPICLK high, (clock 0.5tc(SPC)M – 3
SIMO)M polarity = 1)
tv(SPCL- Valid time, SPISIMO data valid after SPICLK low, (clock 0.5tc(SPC)M –
SIMO)M polarity = 0) 10.5
5(4) ns
tv(SPCH- Valid time, SPISIMO data valid after SPICLK high, (clock 0.5tc(SPC)M –
SIMO)M polarity = 1) 10.5
tC2TDELAY Setup time CS active until SPICLK CSHOLD = 0 0.5*tc(SPC)M + 0.5*tc(SPC)M +
high (C2TDELAY + (C2TDELAY+2
(clock polarity = 0) 2)*tc(VCLK) – 7 ) * tc(VCLK) +
7.5
CSHOLD = 1 0.5*tc(SPC)M + 0.5*tc(SPC)M +
(C2TDELAY + (C2TDELAY+2
2)*tc(VCLK) – 7 ) * tc(VCLK) +
7.5
6(5) ns
CSHOLD = 0 0.5*tc(SPC)M + 0.5*tc(SPC)M +
(C2TDELAY+2 (C2TDELAY+2
)*tc(VCLK) – 7 ) * tc(VCLK) +
Setup time CS active until SPICLK 7.5
low
(clock polarity = 1) CSHOLD = 1 0.5*tc(SPC)M + 0.5*tc(SPC)M +
(C2TDELAY+3 (C2TDELAY+3
)*tc(VCLK) – 7 ) * tc(VCLK) +
7.5
Hold time, SPICLK low until CS inactive (clock polarity = 0) (T2CDELAY + (T2CDELAY +
1) *tc(VCLK) – 1) *tc(VCLK) + 7
7.5
7(5) tT2CDELAY ns
Hold time, SPICLK high until CS inactive (clock polarity = 1) (T2CDELAY + (T2CDELAY +
1) *tc(VCLK) – 1) *tc(VCLK) + 7
7.5

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NO. PARAMETER MIN TYP MAX UNIT


tsu(SOMI- Setup time, SPISOMI before SPICLK low
5
SPCL)M (clock polarity = 0)
8(4) ns
tsu(SOMI- Setup time, SPISOMI before SPICLK high
5
SPCH)M (clock polarity = 1)
th(SPCL- Hold time, SPISOMI data valid after SPICLK low
3
SOMI)M (clock polarity = 0)
9(4) ns
th(SPCH- Hold time, SPISOMI data valid after SPICLK high
3
SOMI)M (clock polarity = 1)

(1) The MASTER bit (SPIGCRx.0) is set and the CLOCK PHASE bit (SPIFMTx.16) is set ( where x = 0 or 1 ).
(2) tc(MSS_VCLK) = main subsystem clock time = 1 / f(MSS_VCLK). For more details, see the Technical Reference Manual.
(3) When the SPI is in Controller mode, the following must be true: For PS values from 1 to 255: tc(SPC)M ≥ (PS +1)tc(MSS_VCLK) ≥ 25 ns,
where PS is the prescale value set in the SPIFMTx.[15:8] register bits. For PS values of 0: tc(SPC)M = 2tc(MSS_VCLK) ≥ 25 ns.
(4) The active edge of the SPICLK signal referenced is controlled by the CLOCK POLARITY bit (SPIFMTx.17).
(5) C2TDELAY and T2CDELAY is programmed in the SPIDELAY register

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SPICLK
(clock polarity = 0)
2

SPICLK
(clock polarity = 1)

4 5

SPISIMO Master Out Data Is Valid Data Valid

8 9

Master In Data
SPISOMI Must Be Valid

Figure 8-7. SPI Controller Mode External Timing (CLOCK PHASE = 1)

Write to buffer

SPICLK
(clock polarity=0)

SPICLK
(clock polarity=1)

SPISIMO Master Out Data Is Valid

6 7
SPICSn

Figure 8-8. SPI Controller Mode Chip Select Timing (CLOCK PHASE = 1)

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8.9.4.3 SPI Peripheral Mode I/O Timings


8.9.4.3.1 SPI Peripheral Mode Switching Parameters (SPICLK = input, SPISIMO = input,
and SPISOMI = output)(1) (2) (3)

NO. PARAMETER MIN TYP MAX UNIT


1 tc(SPC)S Cycle time, SPICLK(4) 25 ns
tw(SPCH)S Pulse duration, SPICLK high (clock polarity = 0) 10
2(5) ns
tw(SPCL)S Pulse duration, SPICLK low (clock polarity = 1) 10
tw(SPCL)S Pulse duration, SPICLK low (clock polarity = 0) 10
3(5) ns
tw(SPCH)S Pulse duration, SPICLK high (clock polarity = 1) 10
td(SPCH-SOMI)S Delay time, SPISOMI valid after SPICLK high
10
(clock polarity = 0)
4(5) ns
td(SPCL-SOMI)S Delay time, SPISOMI valid after SPICLK low (clock
10
polarity = 1)
th(SPCH-SOMI)S Hold time, SPISOMI data valid after SPICLK high
2
(clock polarity = 0)
5(5) ns
th(SPCL-SOMI)S Hold time, SPISOMI data valid after SPICLK low
2
(clock polarity = 1)
td(SPCH-SOMI)S Delay time, SPISOMI valid after SPICLK high
(clock polarity = 0; clock phase = 0) OR (clock 10
polarity = 1; clock phase = 1)
4(5) ns
td(SPCL-SOMI)S Delay time, SPISOMI valid after SPICLK low (clock
polarity = 1; clock phase = 0) OR (clock polarity = 10
0; clock phase = 1)
th(SPCH-SOMI)S Hold time, SPISOMI data valid after SPICLK high
(clock polarity = 0; clock phase = 0) OR (clock 2
polarity = 1; clock phase = 1)
5(5) ns
th(SPCL-SOMI)S Hold time, SPISOMI data valid after SPICLK low
(clock polarity = 1; clock phase = 0) OR (clock 2
polarity = 0; clock phase = 1)
Setup time, SPISIMO before SPICLK low (clock
tsu(SIMO-SPCL)S polarity = 0; clock phase = 0) OR (clock polarity = 3
1; clock phase = 1)
6(5) ns
Setup time, SPISIMO before SPICLK high (clock
tsu(SIMO-SPCH)S polarity = 1; clock phase = 0) OR (clock polarity = 3
0; clock phase = 1)
Hold time, SPISIMO data valid after SPICLK low
th(SPCL-SIMO)S (clock polarity = 0; clock phase = 0) OR (clock 1
polarity = 1; clock phase = 1)
7(5) ns
Hold time, SPISIMO data valid after SPICLK high
th(SPCL-SIMO)S (clock polarity = 1; clock phase = 0) OR (clock 1
polarity = 0; clock phase = 1)

(1) The MASTER bit (SPIGCRx.0) is cleared ( where x = 0 or 1 ).


(2) The CLOCK PHASE bit (SPIFMTx.16) is either cleared or set for CLOCK PHASE = 0 or CLOCK PHASE = 1 respectively.
(3) tc(MSS_VCLK) = main subsystem clock time = 1 / f(MSS_VCLK). For more details, see the Technical Reference Manual.
(4) When the SPI is in peripheral mode, the following must be true: For PS values from 1 to 255: tc(SPC)S ≥ (PS +1)tc(MSS_VCLK) ≥ 25 ns,
where PS is the prescale value set in the SPIFMTx.[15:8] register bits.For PS values of 0: tc(SPC)S = 2tc(MSS_VCLK) ≥ 25 ns.
(5) The active edge of the SPICLK signal referenced is controlled by the CLOCK POLARITY bit (SPIFMTx.17).

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SPICLK
(clock polarity = 0)

SPICLK
(clock polarity = 1)

5
4

SPISOMI SPISOMI Data Is Valid

SPISIMO SPISIMO Data


Must Be Valid

Figure 8-9. SPI peripheral Mode External Timing (CLOCK PHASE = 0)


1

SPICLK
(clock polarity = 0)
2

SPICLK
(clock polarity = 1)

4
5

SPISOMI SPISOMI Data Is Valid

SPISIMO SPISIMO Data


Must Be Valid

Figure 8-10. SPI peripheral Mode External Timing (CLOCK PHASE = 1)

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8.9.4.4 Typical Interface Protocol Diagram (Peripheral Mode)


1. Host should ensure that there is a delay of two SPI clocks between CS going low and start of SPI clock.
2. Host should ensure that CS is toggled for every 16 bits of transfer through SPI.
Figure 8-11 shows the SPI communication timing of the typical interface protocol.
2 SPI clocks

CS

CLK
0x1234 0x4321 CRC 0x5678 0x8765

MOSI
0xDCBA 0xABCD CRC
16 bytes
MISO

IRQ

Figure 8-11. SPI Communication

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8.9.5 LVDS Interface Configuration


The AWR1443 supports seven differential LVDS IOs/Lanes. The lane configuration supported is four Data lanes
(LVDS_TXP/M), one Bit Clock lane (LVDS_CLKP/M) and one Frame clock lane (LVDS_FRCLKP/M), and one
HS_DEBUG LVDS pair. The LVDS interface is used for debugging. The LVDS interface supports the following
data rates:
• 900 Mbps (450 MHz DDR Clock)
• 600 Mbps (300 MHz DDR Clock)
• 450 Mbps (225 MHz DDR Clock)
• 400 Mbps (200 MHz DDR Clock)
• 300 Mbps (150 MHz DDR Clock)
• 225 Mbps (112.5 MHz DDR Clock)
• 150 Mbps (75 MHz DDR Clock)
Note that the bit clock is in DDR format and hence the numbers of toggles in the clock is equivalent to data.

LVDS_TXP/M

LVDS_FRCLKP/M
Data bitwidth

LVDS_CLKP/M

Figure 8-12. LVDS Interface Lane Configuration And Relative Timings

8.9.5.1 LVDS Interface Timings


Table 8-8. LVDS Electrical Characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Duty Cycle Requirements max 1 pF lumped capacitive load on 48% 52%
LVDS lanes
Output Differential Voltage peak-to-peak single-ended with 100 Ω
250 450 mV
resistive load between differential pairs
Output Offset Voltage 1125 1275 mV
Trise and Tfall 20%-80%, 900 Mbps 330 ps
Jitter (pk-pk) 900 Mbps 80 ps

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Trise

LVDS_CLK

LVDS_TXP/M Clock Jitter = 6sigma


LVDS_FRCLKP/M

1100 ps

Figure 8-13. Timing Parameters

8.9.6 General-Purpose Input/Output


Section 8.9.6.1 lists the switching characteristics of output timing relative to load capacitance.
8.9.6.1 Switching Characteristics for Output Timing versus Load Capacitance (CL)
PARAMETER(1) (2) TEST CONDITIONS VIOIN = 1.8V VIOIN = 3.3V UNIT
CL = 20 pF 2.8 3.0
tr Max rise time CL = 50 pF 6.4 6.9 ns
CL = 75 pF 9.4 10.2
Slew control = 0
CL = 20 pF 2.8 2.8
tf Max fall time CL = 50 pF 6.4 6.6 ns
CL = 75 pF 9.4 9.8
CL = 20 pF 3.3 3.3
tr Max rise time CL = 50 pF 6.7 7.2 ns
CL = 75 pF 9.6 10.5
Slew control = 1
CL = 20 pF 3.1 3.1
tf Max fall time CL = 50 pF 6.6 6.6 ns
CL = 75 pF 9.6 9.6

(1) Slew control, which is configured by PADxx_CFG_REG, changes behavior of the output driver (faster or slower output slew rate).
(2) The rise/fall time is measured as the time taken by the signal to transition from 10% and 90% of VIOIN voltage.

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8.9.7 Controller Area Network Interface (DCAN)


The DCAN supports the CAN 2.0B protocol standard and uses a serial, multi-commander communication
protocol that efficiently supports distributed real-time control with robust communication rates of up to 1 Mbps.
The DCAN is ideal for applications operating in noisy and harsh environments that require reliable serial
communication or multiplexed wiring.
The DCAN has the following features:
• Supports CAN protocol version 2.0 part A, B
• Bit rates up to 1 Mbps
• Configurable Message objects
• Individual identifier masks for each message object
• Programmable FIFO mode for message objects
• Suspend mode for debug support
• Programmable loop-back modes for self-test operation
• Direct access to Message RAM in test mode
• Supports two interrupt lines - Level 0 and Level 1
• Automatic Message RAM initialization
8.9.7.1 Dynamic Characteristics for the DCANx TX and RX Pins
PARAMETER MIN TYP MAX UNIT
td(CAN_tx) Delay time, transmit shift register to CAN_tx pin(1) 15 ns
td(CAN_rx) Delay time, CAN_rx pin to receive shift register(1) 10 ns

(1) These values do not include rise/fall times of the output buffer.

8.9.8 Serial Communication Interface (SCI)


The SCI has the following features:
• Standard universal asynchronous receiver-transmitter (UART) communication
• Standard non-return to zero (NRZ) format
• Double-buffered receive and transmit functions
• Asynchronous or iso-synchronous communication modes with no CLK pin
• Capability to use Direct Memory Access (DMA) for transmit and receive data
• Two external pins: RS232_RX and RS232_TX
8.9.8.1 SCI Timing Requirements
MIN TYP MAX UNIT
f(baud) Supported baud rate at 20 pF 921.6 kHz

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8.9.9 Inter-Integrated Circuit Interface (I2C)


The inter-integrated circuit (I2C) module is a multicontroller communication module providing an interface
between devices compliant with Philips Semiconductor I2C-bus specification version 2.1 and connected by an
I2C-bus™. This module will support any target or controller I2C compatible device.
The I2C has the following features:
• Compliance to the Philips I2C bus specification, v2.1 (The I2C Specification, Philips document number 9398
393 40011)
– Bit/Byte format transfer
– 7-bit and 10-bit device addressing modes
– General call
– START byte
– Multi-controller transmitter/ target receiver mode
– Multi-controller receiver/ target transmitter mode
– Combined controller transmit/receive and receive/transmit mode
– Transfer rates of 100 kbps up to 400 kbps (Phillips fast-mode rate)
• Free data format
• Two DMA events (transmit and receive)
• DMA event enable/disable capability
• Module enable/disable capability
• The SDA and SCL are optionally configurable as general purpose I/O
• Slew rate control of the outputs
• Open drain control of the outputs
• Programmable pullup/pulldown capability on the inputs
• Supports Ignore NACK mode

Note
This I2C module does not support:
• High-speed (HS) mode
• C-bus compatibility mode
• The combined format in 10-bit address mode (the I2C sends the target address second byte every
time it sends the target address first byte)

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8.9.9.1 I2C Timing Requirements(1)


STANDARD MODE FAST MODE
UNIT
MIN MAX MIN MAX
tc(SCL) Cycle time, SCL 10 2.5 μs
tsu(SCLH-SDAL) Setup time, SCL high before SDA low 4.7 0.6 μs
(for a repeated START condition)
th(SCLL-SDAL) Hold time, SCL low after SDA low 4 0.6 μs
(for a START and a repeated START condition)
tw(SCLL) Pulse duration, SCL low 4.7 1.3 μs
tw(SCLH) Pulse duration, SCL high 4 0.6 μs
tsu(SDA-SCLH) Setup time, SDA valid before SCL high 250 100 μs
th(SCLL-SDA) Hold time, SDA valid after SCL low 0 3.45(1) 0 0.9 μs
tw(SDAH) Pulse duration, SDA high between STOP and START 4.7 1.3 μs
conditions
tsu(SCLH-SDAH) Setup time, SCL high before SDA high 4 0.6 μs
(for STOP condition)
tw(SP) Pulse duration, spike (must be suppressed) 0 50 ns
Cb (2) (3) Capacitive load for each bus line 400 400 pF

(1) The I2C pins SDA and SCL do not feature fail-safe I/O buffers. These pins could potentially draw current when the device is powered
down.
(2) The maximum th(SDA-SCLL) for I2C bus devices has only to be met if the device does not stretch the low period (tw(SCLL)) of the
SCL signal.
(3) Cb = total capacitance of one bus line in pF. If mixed with fast-mode devices, faster fall-times are allowed.

SDA

tw(SDAH) tsu(SDA-SCLH) tw(SP)


tw(SCLL)
tw(SCLH) tsu(SCLH-SDAH)
tr(SCL)

SCL

tc(SCL) tf(SCL) th(SCLL-SDAL)


th(SDA-SCLL)
tsu(SCLH-SDAL)
th(SCLL-SDAL)

Stop Start Repeated Start Stop

Figure 8-14. I2C Timing Diagram

Note
• A device must internally provide a hold time of at least 300 ns for the SDA signal (referred to the
VIHmin of the SCL signal) to bridge the undefined region of the falling edge of SCL.
• The maximum th(SDA-SCLL) has only to be met if the device does not stretch the LOW
period (tw(SCLL)) of the SCL signal. E.A Fast-mode I2C-bus device can be used in a Standard-
mode I2C-bus system, but the requirement tsu(SDA-SCLH) ≥ 250 ns must then be met. This will
automatically be the case if the device does not stretch the LOW period of the SCL signal. If such
a device does stretch the LOW period of the SCL signal, it must output the next data bit to the SDA
line tr max + tsu(SDA-SCLH).

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8.9.10 Quad Serial Peripheral Interface (QSPI)


The quad serial peripheral interface (QSPI) module is a kind of SPI module that allows single, dual, or quad read
access to external SPI devices. This module has a memory mapped register interface, which provides a direct
interface for accessing data from external SPI devices and thus simplifying software requirements. The QSPI
works as a controller only. The QSPI in the device is primarily intended for fast booting from quad-SPI flash
memories.
The QSPI supports the following features:
• Programmable clock divider
• Six-pin interface
• Programmable length (from 1 to 128 bits) of the words transferred
• Programmable number (from 1 to 4096) of the words transferred
• Support for 3-, 4-, or 6-pin SPI interface
• Optional interrupt generation on word or frame (number of words) completion
• Programmable delay between chip select activation and output data from 0 to 3 QSPI clock cycles
Section 8.9.10.2 and Section 8.9.10.3 assume the operating conditions stated in Section 8.9.10.1.
8.9.10.1 QSPI Timing Conditions
MIN TYP MAX UNIT
Input Conditions
tR Input rise time 1 3 ns
tF Input fall time 1 3 ns
Output Conditions
CLOAD Output load capacitance 2 15 pF

8.9.10.2 Timing Requirements for QSPI Input (Read) Timings(1) (2)


MIN TYP MAX UNIT
tsu(D-SCLK) Setup time, d[3:0] valid before falling sclk edge (Q12) 7.3 ns
th(SCLK-D) Hold time, d[3:0] valid after falling sclk edge (Q13) 1.5 ns
tsu(D-SCLK) Setup time, final d[3:0] bit valid before final falling sclk edge 7.3 – P(3) ns
th(SCLK-D) Hold time, final d[3:0] bit valid after final falling sclk edge 1.5 + P(3) ns

(1) Clock Mode 0 (clk polarity = 0 ; clk phase = 0 ) is the mode of operation.
(2) The Device captures data on the falling clock edge in Clock Mode 0, as opposed to the traditional rising clock edge. Although
non-standard, the falling-edge-based setup and hold time timings have been designed to be compatible with standard SPI devices that
launch data on the falling edge in Clock Mode 0.
(3) P = SCLK period in ns.

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8.9.10.3 QSPI Switching Characteristics


NO. PARAMETER MIN TYP MAX UNIT
Q1 tc(SCLK) Cycle time, sclk 25 ns
Q2 tw(SCLKL) Pulse duration, sclk low 0.5*P – 3(1) ns
Q3 tw(SCLKH) Pulse duration, sclk high 0.5*P – 3 ns
Q4 td(CS-SCLK) Delay time, sclk falling edge to cs active edge –M*P – 1(2) –M*P + 2.5(2) ns
Q5 td(SCLK-CS) Delay time, sclk falling edge to cs inactive edge N*P – 1(2) N*P + 2.5(2) ns
Q6 td(SCLK-D1) Delay time, sclk falling edge to d[0] transition –3.5 7 ns
Q7 tena(CS-D1LZ) Enable time, cs active edge to d[0] driven (lo-z) –P – 4(2) –P +1(2) ns
Q8 tdis(CS-D1Z) Disable time, cs active edge to d[0] tri-stated (hi-z) –P – 4(2) –P +1(2) ns
td(SCLK-D1) Delay time, sclk first falling edge to first d[1] transition ns
Q9 –3.5 – P(2) 7 – P(2)
(for PHA = 0 only)

(1) P = SCLK period in ns.


(2) M = QSPI_SPI_DC_REG.DDx + 1, N = 2

Figure 8-15. QSPI Read (Clock Mode 0)

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PHA=0
cs

Q5

Q4 Q1
Q2 Q3
POL=0
sclk

Q6 Q6 Q8
Q7 Q9 Q6
Command Command Write Data Write Data
d[0] Bit n-1 Bit n-2 Bit 1 Bit 0

d[3:1]

SPRS85v_TIMING_OSPI1_04

Figure 8-16. QSPI Write (Clock Mode 0)

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8.9.11 JTAG Interface


Section 8.9.11.2 and Section 8.9.11.3 assume the operating conditions stated in Section 8.9.11.1.
8.9.11.1 JTAG Timing Conditions
MIN TYP MAX UNIT
Input Conditions
tR Input rise time 1 3 ns
tF Input fall time 1 3 ns
Output Conditions
CLOAD Output load capacitance 2 15 pF

8.9.11.2 Timing Requirements for IEEE 1149.1 JTAG


NO. MIN TYP MAX UNIT
1 tc(TCK) Cycle time TCK 66.66 ns
1a tw(TCKH) Pulse duration TCK high (40% of tc) 26.67 ns
1b tw(TCKL) Pulse duration TCK low(40% of tc) 26.67 ns
tsu(TDI-TCK) Input setup time TDI valid to TCK high 2.5 ns
3
tsu(TMS-TCK) Input setup time TMS valid to TCK high 2.5 ns
th(TCK-TDI) Input hold time TDI valid from TCK high 18 ns
4
th(TCK-TMS) Input hold time TMS valid from TCK high 18 ns

8.9.11.3 Switching Characteristics Over Recommended Operating Conditions for IEEE 1149.1 JTAG
NO. PARAMETER MIN TYP MAX UNIT
2 td(TCKL-TDOV) Delay time, TCK low to TDO valid 0 25 ns

1
1a 1b

TCK

TDO

3 4

TDI/TMS

SPRS91v_JTAG_01

Figure 8-17. JTAG Timing

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9 Detailed Description
9.1 Overview
The AWR1443 device includes the entire millimeter wave blocks and analog baseband signal chain for three
transmitters (two usable at the same instance) and four receivers, as well as a customer-programmable MCU
with a hardware accelerator for radar signal processing. This device is applicable as a radar-on-a-chip in
use-cases with modest requirements for memory, processing capacity and application code size. These could
be cost-sensitive automotive applications that are evolving from 24 GHz narrowband implementation and some
emerging simple ultra-short-range radar applications. Typical application examples for this device include basic
Blind Spot Detect, Parking Assist, and so forth.
In terms of scalability, the AWR1443 device could be paired with a low-end external MCU, to address more
complex applications that might require additional memory for larger application software footprint and faster
interfaces. Because the AWR1443 device also provides high speed data interfaces, it is suitable for interfacing
with more capable external processing blocks. Here system designers can choose the AWR1443 to provide raw
ADC data or use the on-chip Hardware Accelerator for partial processing viz. first stage Fast Fourier Transform.
9.2 Functional Block Diagram

RX1 LNA IF ADC Cortex R4F


@ 200 MHz

(User programmable)
RX2 LNA IF ADC
Digital Front
End
Boot
Prog RAM* Data RAM*
RX3 LNA IF ADC (Decimation ROM
filter chain)

Serial Flash
QSPI
RX4 LNA IF ADC Radar Data interface
Memory*

Optional External
SPI
MCU interface
TX1
ADC
Bus Matrix

PA
Buffer Radar
SPI / I2C PMIC control
Hardware
Accelerator
Synth Ramp (FFT, Log-
TX2 PA x4
(20 GHz) Generator Mag, and Primary communication
others.) DCAN
interface (automotive)

TX3 PA
DMA Debug For debug
UARTs

RF Control/
Mailbox Test/ JTAG for debug/
BIST
Debug development
Osc. VMON Temp GPADC

Main subsystem
RF/Analog subsystem (Customer programmed)

* Total RAM available in Main subsystem is 576KB (for Cortex-R4F Program RAM, Data RAM, and Radar Data Memory)

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Figure 9-1. Functional Block Diagram

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9.3 External Interfaces


The AWR1443 device provides the following external interfaces:
• Reference Clock – Reference clock available for Host Processor after device wakeup.
• Low speed control information
– Up to two 4-line standard SPI interface
– One I2C interface (Pin multiplexed with one of the SPI ports)
• One Controller Area Network (CAN) Port for Automotive Interfacing
• Reset – Active Low reset for device wakeup from host General Purpose IOs
• Error Signaling – Used for notifying the host in case the Radio Controller detects a fault
The AWR1443 device comprises of three main blocks – Radar (or the Millimeter Wave) System, Main (or the
Control) System and Processing System.

RADAR System
Radar Processing Inter-connect [128 Bit @ 200MHz]
RF/Analog/Monitoring

FFT
L3 ADC
LVDS ACCELERATOR EDMA
RAM BUFFERS
MAILBOX
(384KB)
2x16KB

Main (Control) System Inter-connect [64 Bit @ 200MHz]

CRC JTAG ROM DMA

Integrated MCU Program


ARM® Cortex® R4F RAM

Data
RAM

Peripheral Inter-connect

SPI SPI Timer UART QSPI CAN I2C PWM

Figure 9-2. System Interconnect

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9.4 Subsystems
9.4.1 RF and Analog Subsystem
The RF and analog subsystem includes the RF and analog circuitry – namely, the synthesizer, PA, LNA, mixer,
IF, and ADC. This subsystem also includes the crystal oscillator and temperature sensors. The three transmit
channels can be operated up to a maximum of two at a time (simultaneously) for transmit beamforming purpose
as required; whereas the four receive channels can all be operated simultaneously.

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9.4.1.1 Clock Subsystem


The AWR1443 clock subsystem generates 76 to 81 GHz from an input reference of 40-MHz crystal. It has
a built-in oscillator circuit followed by a clean-up PLL and a RF synthesizer circuit. The output of the RF
synthesizer is then processed by an X4 multiplier to create the required frequency in the 76 to 81 GHz spectrum.
The RF synthesizer output is modulated by the timing engine block to create the required waveforms for effective
sensor operation.
The clean-up PLL also provides a reference clock for the host processor after system wakeup.
The clock subsystem also has built-in mechanisms for detecting the presence of a crystal and monitoring the
quality of the generated clock.
Figure 9-3 describes the clock subsystem.

TX Phase Mod.
Lock Detect

PA Envelope
Self Test

ADCs
Timing
RF SYNTH Engine

1 GHz
(fixed clockdomain)

Clean- Lock Detect


Up PLL SoC Clock

x4
MULT XO/
CLK Detect
Slicer
SYNCIN

OSC_CLKOUT

40 MHz
RX LO

TX LO

Figure 9-3. Clock Subsystem

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9.4.1.2 Transmit Subsystem


The AWR1443 transmit subsystem consists of three parallel transmit chains, each with independent phase and
amplitude control. A maximum of 2 transmit chains can be operational at the same time. However all 3 chains
can be operated together in a time multiplexed fashion. The device supports binary phase modulation for MIMO
radar and interference mitigation.
Each transmit chain can deliver a maximum of 12 dBm at the antenna port on the PCB. The transmit chains also
support programmable backoff for system optimization.
Figure 9-4 describes the transmit subsystem.
Loopback Path Fine Phase Shifter Control
Package

PCB 6 bits
Chip

12dBm
û- LO
@ 50 Ÿ

0/180°
(from Timing Engine)

Self Test

Figure 9-4. Transmit Subsystem (Per Channel)

9.4.1.3 Receive Subsystem


The AWR1443 receive subsystem consists of four parallel channels. A single receive channel consists of an
LNA, mixer, IF filtering, ADC conversion, and decimation. All four receive channels can be operational at the
same time an individual power-down option is also available for system optimization.
Unlike conventional real-only receivers, the AWR1443 device supports a complex baseband architecture, which
uses quadrature mixer and dual IF and ADC chains to provide complex I and Q outputs for each receiver
channel. The AWR1443 is targeted for fast chirp systems. The band-pass IF chain has configurable lower cutoff
frequencies above 175 kHz and can support bandwidths up to 5 MHz.
Figure 9-5 describes the receive subsystem.
Saturation
Detect

Self Test

DAC
Loopback
Path
Package

DSM
Chip

Image Rejection

PCB
I/Q Correction
Decimation

ADC Buffer

I RSSI
50 W
LO
GSG
Q

DSM

DAC

Figure 9-5. Receive Subsystem (Per Channel)

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9.4.1.4 Radio Processor Subsystem


The Radio Processor subsystem (also referred to as BIST Subsystem in this document) includes the digital
front-end, the ramp generator and an internal processor for control / configuration of the low-level RF/analog
and ramp generator registers. The Radar Processor also schedules periodic monitoring tasks. User applications,
running on
Master (Control) System, do not have direct access to Radar System; access is based on well-defined API
messages (over a hardware channel) from the master subsystem.

Note
This radio processor is programmed by TI and takes care of RF calibration and self-test/monitoring
functions (BIST). This processor is not available directly for customer use/application.

The digital front-end takes care of filtering and decimating the raw sigma-delta ADC output and provides the final
ADC data samples at a programmable sampling rate.
9.4.2 Main (Control) System
The Main (Control) System includes ARM’s automotive grade Cortex-R4F processor clocked at 200 MHz, which
is user programmable. User applications executing on this processor control the overall operation of the device,
including Radar Control via well-defined API messages, radar signal processing (assisted by the radar hardware
accelerator) and peripherals for external interface.
The Main (Control) System plays a big role in enabling autonomous operation of AWR1443 as a radar-on-a-chip
sensor. The device includes a quad serial peripheral interface (QSPI) which can be used to download customer
code directly from a serial flash. A (classic) CAN interface is included that can be used to communicate directly
from the device to a CAN bus. An SPI/I2C interface is available for power management IC (PMIC) control when
the AWR1443 is used as an autonomous sensor.
For more complex applications, the device can operate under the control of an external MCU, which can
communicate with AWR1443 device over an SPI interface. In this case, it is possible to use the AWR14xx as a
radar sensor, providing raw detected objects to the external MCU. External MCU could reduce the application
code complexity residing in the device and makes more memory available for radar data cube inside the
AWR1443. This configuration also eliminates the need for a separate serial flash to be connected to the
AWR1443.
Furthermore, the external MCU can provide faster interfaces, such as CAN-FD or Ethernet, for the radar sensor
to connect to a central processing unit (CPU). In such a distributed configuration, multiple AWR1443 devices
mounted around the vehicle can connect to the CPU, providing a surround view. The external MCU itself
is low-cost, because the low-level radar signal processing is accomplished inside the AWR1443, using the
hardware accelerator, while the higher-layer intelligence and complex algorithms reside in the common CPU,
making the overall solution cost-effective.
Note that although four interfaces – one CAN, one I2C and two SPI interfaces – are present in the AWR1443
device for external communication and PMIC control, only two of these interfaces are usable at any point in time.
The total memory (RAM) available in the Main subsystem is 576 KB. This is partitioned between the R4F
program RAM, R4F data RAM and radar data memory. The maximum usable size for R4F is 448 KB and this
is partitioned between the R4F’s tightly coupled interfaces TCMA (320 KB) and TCMB (128 KB). Although the
complete 448 KB is unified memory and can be used for program or data, typical applications use TCMA as
program and TCMB as data memory.
The remaining memory, starting at a minimum of 128 KB, is available to be used as radar data memory for
storing the ‘radar data cube’. It is possible to increase the radar data memory size in 64 KB increments, at the
cost of corresponding reduction in R4F program or data RAM size. The maximum size of radar data memory
possible is 384 KB. A few example configurations supported are listed in Table 9-1.

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Table 9-1. R4F RAM(1)


R4F
R4F DATA RADAR DATA
OPTION PROGRAM
RAM MEMORY
RAM
1 320KB 128KB 128KB
2 256KB 128KB 192KB
3 256KB 64KB 256KB
4 128KB 64KB 384KB

(1) For AWR1443 ES version 1.0, available RAM is 448 KB instead


of 576KB.

The Main Subsystem, Cortex-R4F memory map is shown in Table 9-2.


Table 9-2. Main System Memory Map
Frame Address (Hex)
Name Size Description
Start End
CPU Tightly Coupled Memories
TCMA ROM 0x0000_0000 0x0001_FFFF 96KiB Program ROM
TCM RAM-A 0x0020_0000 0x0024_FFFF 128–320KiB Memory size is dependant on the
TCM RAM-B 0x0800_0000 0x0802_FFFF 64–128KiB allocation done in Table 9-1, R4F RAM

System Peripherals
0xF060_1000 0xF060_17FF 2KiB RADARSS to MSS mailbox memory space
0xF060_2000 0xF060_27FF 2KiB MSS to RADARSS mailbox memory space
Mail Box MSS to RADARSS mailbox Configuration
MSS<->RADARSS 0xF060_8000 0xF060_80FF 188B
Registers
RADARSS to MSS mailbox Configuration
0xF060_8060 0xF060_86FF 188B
Registers
TOP Level Reset, Clock management
0xFFFF_E100 0xFFFF_E2FF 756B
registers
0xFFFF_FF00 0xFFFF_FFFF 256B MSS Reset, Clock management registers
PRCM & Control Module 0xFFFF_EA00 0xFFFF_EBFF 512KiB IO Mux module registers
0xFFFF_F800 0xFFFF_FBFF 352B General-purpose control registers
TPCC,TPTC,ADC buffer configuration,
0x5000_0400 584B
status registers
GIO 0xFFF7_BC00 0xFFF7_BDFF 180B GIO module configuration registers
DMA 0xFFFF_F000 0xFFFF_F3FF 1KiB DMA-1 module configuration registers
VIM 0xFFFF_FD00 0xFFFF_FEFF 512B VIM module configuration registers
RTI-A 0xFFFF_FC00 0xFFFF_FCFF 192B RTI-A module
RTI-B 0xFFFF_EE00 0xFFFF_EEFF 192B RTI-B module register space
Serial Interfaces and Connectivity
QSPI 0xC000_0000 0xC07F_FFFF 8MB QSPI –Flash Memory space
0xC080_0000 0xC0FF_FFFF 116B QSPI module configuration registers
MIBSPI 0xFFF7_F400 0xFFF7_F5FF 512B MIBSPI-A module configuration registers
SPI 0xFFF7_F600 0xFFF7_F7FF 512B SPI module configuration registers
SCI-A/UART 0xFFF7_E500 0xFFF7_E5FF 148B SCI-A module configuration registers
SCI-B/UART 0xFFF7_E700 0xFFF7_E7FF 148B SCI-B module configuration registers
CAN 0xFFF7_DC00 0xFFF7_DDFF 512B CAN module configuration registers
I2C 0xFFF7_D400 0xFFF7_D4FF 112B I2C module configuration registers
ADC Buffer 0x5200_0000 16KiB ADC ping pong buffer memory space
CBUF_FIFO 0x5202_0000 16KiB Common buffer memory space

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Table 9-2. Main System Memory Map (continued)


Frame Address (Hex)
Name Size Description
Start End
0x5008_0000 0x5008_07FF 512B FFT Accelerator PARAM memory
0x5008_0800 0x5008_0FFF 264B FFT accelerator Configuration registors
Hardware FFT accelerator 0x5008_1000 4KiB FFT accelerator Window registers
0x5203_0000 0x5203_7FFF 32KiB FFT accelerator Memory -1 space
0x5203_8000 32KiB FFT accelerator Memory -2 space
L3 Memory
L3 Shared Memory 0x5100_0000 384KiB L3 Shared memory space
Interconnects
PCR 0xFFF7_8000 0xFFF7_87FF 1KiB PCR-1 interconnect configuration port
PCR-2 0xFCFF_1000 0xFCFF_17FF 1KiB PCR-2 interconnect configuration port
128 bit SCR 0x5207_0000 128B 128 bit SCR configuration port
Safety Modules
CRC 0xFE00_0000 0xFEFF_FFFF 16KiB CRC module configuration registers
PBIST 0xFFFF_E400 0xFFFF_E5FF 464B PBIST module configuration registers
STC 0xFFFF_E600 0xFFFF_E7FF 284B STC module configuration registers
DCC-A 0xFFFF_EC00 0xFFFF_ECFF 44B DCC-A module configuration registers
DCC-B 0xFFFF_F400 0xFFFF_F4FF 44B DCC-B module configuration registers
ESM 0xFFFF_F500 0xFFFF_F5FF 156B ESM module configuration registers
CCMR4 0xFFFF_F600 0xFFFF_F6FF 136B CCMR4 module configuration registers
Peripheral Memories (System & Non System)
CAN RAM 0xFF1E_0000 0xFF1F_FFFF 128KB CAN RAM memory space
DMA RAM 0xFFF8_0000 0xFFF8_0FFF 4KB DMA RAM memory space
VIM RAM 0xFFF8_2000 0xFFF8_2FFF 2KB VIM RAM memory space
MIBSPIA-TX RAM 0xFF0E_0000 0xFF0E_01FF 0.5KB MIBSPIA-TX RAM memory space
MIBSPIA- RX RAM 0xFF0E_0200 0xFF0E_03FF 0.5KB MIBSPIA- RX RAM memory space
Debug Modules
Debug subsystem memory space and
Debug Sub System 0xFFA0_0000 0xFFAF_FFFF 244KiB
registers

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9.4.3 Host Interface


The AWR1443 device communicates with the host radar processor over the following main interfaces:
• Reference Clock – Reference clock available for host processor after device wakeup
• Control – 4-port standard SPI (peripheral) for host control . All radio control commands (and response) flow
through this interface.
• Reset – Active-low reset for device wakeup from host
• Out-of-band interrupt
• Error – Used for notifying the host in case the radio controller detects a fault
9.5 Accelerators and Coprocessors
The Processing System in the AWR1443 device is an accelerator for FFT operations. The Radar Hardware
Accelerator is an IP that enables off-loading the burden of certain frequently used computations in FMCW radar
signal processing from the main processor. It is well-known that FMCW radar signal processing involves the use
of FFT and Log-Magnitude computations in order to obtain a radar image across the range, velocity and angle
dimensions. Some of the frequently used functions in FMCW radar signal processing can be done within the
Radar Hardware Accelerator, while still retaining the flexibility of implementing other proprietary algorithms in the
Master System processor.
Key features of the Radar Processing Accelerator are:
• FFT computation, with programmable FFT sizes (powers of 2) up to 1024-pt complex FFT
• Internal FFT bit-width of 24 bits (each for I and Q) for good SQNR performance, with fully programmable
butterfly scaling at every radix-2 stage for user flexibility
• Built-in capabilities for simple pre-FFT processing – specifically, programmable windowing, basic interference
zeroing-out and basic BPM removal
• Magnitude (absolute value) and Log-Magnitude computation capability
• Flexible data flow and data sample arrangement to support efficient multi-dimensional FFT operations and
transpose accesses as required
• Chaining and Looping mechanism to sequence a set of accelerator operations one-after-another with minimal
intervention from the main processor
• CFAR-CA detector support (linear and logarithmic)
• Miscellaneous other capabilities of the accelerator
– Stitching two or four 1024-point FFTs to get the equivalent of 2048-point or 4096-point FFT for industrial
level sensing applications where large FFT sizes are required
– Slow DFT mode, with resolution equivalent to 16K size FFT, for FFT peak interpolation (eg. range
interpolation) purpose
– Complex Vector Multiplication and Dot product capability for vectors of size up to 512
9.6 Other Subsystems
9.6.1 ADC Channels (Service) for User Application
The AWR1443 device includes provision for an ADC service for user application, where the
GPADC engine present inside the device can be used to measure up to six external voltages. The ADC1, ADC2,
ADC3, ADC4, ADC5, and ADC6 pins are used for this purpose.
• ADC itself is controlled by TI firmware running inside the BIST subsystem and access to it for customer’s
external voltage monitoring purpose is via ‘monitoring API’ calls routed to the BIST subsystem. This API
could be linked with the user application running on MSS R4F.
• BIST subsystem firmware will internally schedule these measurements along with other RF and Analog
monitoring operations. The API allows configuring the settling time (number of ADC samples to skip) and
number of consecutive samples to take. At the end of a frame, the minimum, maximum and average of the
readings will be reported for each of the monitored voltages.
GPADC Specifications:
• 625 Ksps SAR ADC

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• 0 to 1.8V input range


• 10-bit resolution
• For 5 out of the 6 inputs, an optional internal buffer is available. Without the buffer, the ADC has a switched
capacitor input load modeled with 5pF of sampling capacitance and 12pF parasitic capacitance (GPADC
channel 6, the internal buffer is not available).

5
ANALOG TEST 1-4, GPADC
ANAMUX

VSENSE

A. GPADC structures are used for measuring the output of internal temperature sensors. The accuracy of these measurements is ±7°C.

Figure 9-6. ADC Path

9.6.1.1 GP-ADC Parameter


PARAMETER TYP UNIT
ADC supply 1.8 V
ADC unbuffered input voltage range 0 – 1.8 V
ADC buffered input voltage range(1) 0.4 – 1.3 V
ADC resolution 10 bits
ADC offset error ±5 LSB
ADC gain error ±5 LSB
ADC DNL –1/+2.5 LSB
ADC INL ±2.5 LSB
ADC sample rate(2) 625 Ksps
ADC sampling time(2) 400 ns
ADC internal cap 10 pF
ADC buffer input capacitance 2 pF
ADC input leakage current 3 uA

(1) Outside of given range, the buffer output will become nonlinear.
(2) ADC itself is controlled by TI firmware running inside the BIST subsystem. For more details please refer to the API calls.

9.7 Boot Modes


As soon as device reset is de-asserted, the R4F processor of the Main (Control) system starts executing its
bootloader from an on-chip ROM memory.
The bootloader of the Main system operates in two basic modes and these are specified on the user hardware
(Printed Circuit Board) by configuring what are termed as “Sense on Power” (SOP) pins. These pins on the
device boundary are scanned by the bootloader firmware and choice of mode for bootloader operation is made.
Table 9-3 enumerates the relevant SOP combinations and how these map to bootloader operation.

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Table 9-3. SOP Combinations


SOP2 (P13) SOP1 (P11) SOP0 (J13) BOOTLOADER MODE AND OPERATION
Functional Mode
0 0 1 Device Bootloader loads user application from QSPI Serial Flash to
internal RAM and switches the control to it
Flashing Mode
1 0 1 Device Bootloader spins in loop to allow flashing of user application
(or device firmware patch – Supplied by TI) to the serial flash
Debug Mode
0 1 1 Bootloader is bypassed and R4F processor is halted. This allows
user to connect emulator at a known point

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9.7.1 Flashing Mode


In Flashing Mode, the Main System’s bootloader enables the UART driver and expects a data stream comprising
of User Application (Binary Image) and Device Firmware (referred to as Device Firmware Patch or Service Pack)
from an external flashing utility. Figure 9-7 shows the flashing utility executing on a PC platform, but the protocol
can be accomplished on an embedded platform as well.
Serial
FLASH

QSPI
User Application

SOP2
SOP1
SOP0
And device firmware
Flashing

x
x

x
ROM UART x

FLASHING
Radar Program Integrated MCU
RAM UTILITY
Section RAM ARM Cortex-R4F

Data
RAM

Figure 9-7. Figure 5. Bootloader Flashing Mode

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9.7.2 Functional Mode


In Functional Mode, the Main System’s bootloader looks for a valid image in the serial flash memory, interfaced
over the QSPI port. If a valid image is found, the bootloader transfers the same to Main System’s memory
subsystem. If the device firmware image is found, it gets transferred to the Radar section’s memory subsystem.
If a valid image (or the QSPI Serial Flash is not found), the bootloader initializes the SPI port and awaits for the
image transfer. This operation comes handy for configurations where the AWR1443 is interfaced to an external
processor which has its own nonvolatile storage hence can store the user application and the AWR1443 device’s
firmware image.
User Application is Loaded
Serial
From FLASH to R4F RAM and
Flash
Device Patch to Radar Section

QSPI
SOP2
SOP1
SOP0

ROM UART

Radar Data Integrated MCU


RAM RAM ARM Cortex-R4F
Section

Histogram
RAM External
SPI
Processor

User Application is Loaded


From FLASH to R4F RAM and
Device Patch to Radar Section

Figure 9-8. Bootloader’s Functional Mode

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10 Applications, Implementation, and Layout


Note
Information in the following Applications section is not part of the TI component specification, and
TI does not warrant its accuracy or completeness. TI's customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.

10.1 Application Information


Key device features driving the following applications are:
• Integration of Radar Front End and Programmable MCU
• On-chip Hardware Accelerator for Radar Data Processing
• Flexible boot modes: Autonomous Application boot using a serial flash or external boot over SPI.
10.2 Short-Range Radar

40-MHz
Power
Crystal
Management

Antenna
Structure RX1
RX2 Integrated MCU
AcceARM Cortex-R4F
RX3 Radar and
RX4 Front End SPI External
Hardware
MCU
Accelerator for
Radar Processing
TX1
TX2 Control
TX3
Detected
AWR1443 Objects

Figure 10-1. Short-Range Radar

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10.3 Blind Spot Detector and Ultrasonic Upgrades

40-MHZ Serial
Power
Crystal Flash
Management

Antenna
Structure RX1
RX2 Integrated MCU
ARM Cortex-R4F
RX3 Radar and
RX4 Front End CAN CAN Automotive
Hardware
PHY Network
Accelerator for
Radar Processing
TX1
TX2
TX3

AWR1443

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10.4 Reference Schematic


The reference schematic and power supply information can be found in the AWR1443 EVM Documentation.
Listed for convenience are: Design Files, Schematics, Layouts, and Stack up for PCB.
• Altium AWR1443 EVM Design Files
• AWR1443 EVM Schematic Drawing, Assembly Drawing, and Bill of Materials

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11 Device and Documentation Support


TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions follow.
11.1 Device Nomenclature
To designate the stages in the product development cycle, TI assigns prefixes to the part numbers of all
microprocessors (MPUs) and support tools. Each device has one of three prefixes: X, P, or null (no prefix) (for
example, AWR1443). Texas Instruments recommends two of three possible prefix designators for its support
tools: TMDX and TMDS. These prefixes represent evolutionary stages of product development from engineering
prototypes (TMDX) through fully qualified production devices and tools (TMDS).
Device development evolutionary flow:
X Experimental device that is not necessarily representative of the final device's electrical specifications and
may not use production assembly flow.
P Prototype device that is not necessarily the final silicon die and may not necessarily meet final electrical
specifications.
null Production version of the silicon die that is fully qualified.

Support tool development evolutionary flow:

TMDX Development-support product that has not yet completed Texas Instruments internal qualification testing.
TMDS Fully-qualified development-support product.
X and P devices and TMDX development-support tools are shipped against the following disclaimer:
"Developmental product is intended for internal evaluation purposes."
Production devices and TMDS development-support tools have been characterized fully, and the quality and
reliability of the device have been demonstrated fully. TI's standard warranty applies.
Predictions show that prototype devices (X or P) have a greater failure rate than the standard production
devices. Texas Instruments recommends that these devices not be used in any production system because their
expected end-use failure rate still is undefined. Only qualified production devices are to be used.
TI device nomenclature also includes a suffix with the device family name. This suffix indicates the package
type (for example, ABL0161 ALB0161), the temperature range (for example, blank is the default commercial
temperature range). Figure 11-1 provides a legend for reading the complete device name for any AWR1443
device.
For orderable part numbers of AWR1443 devices in the ABL0161 package types, see the Package Option
Addendum of this document , the TI website (www.ti.com), or contact your TI sales representative.
For additional description of the device nomenclature markings on the die, see the AWR1443 Device Errata .

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AWR 1 4 43 Q I G ABL Q1

Qualification
Q1 = AEC-Q100
Prefix Blank = no special Qual
AWR = Production Tray or Tape & Reel
Generation R = Big Reel
1 = 76 ± 81 GHz Blank = Tray

Variant Package
2 = FE ABL = BGA
4 = FE + FFT + MCU
6 = FE + MCU + DSP + 1.5 MB
Security
Num RX/TX Channels G = General
RX = 1,2,3,4 S = Secure
TX = 1,2,3 D = Development Secure

Silicon PG Revision Temperature (Tj)


Blank = Rev 1.0
E = Rev 2.0 C = 0°C to 70°C
F = Rev 3.0 K = ±40°C to 85°C
Features A = ±40°C to 105°C
Blank = Baseline I = ±40°C to 125°C
P = High Performance

Safety
Q = Non-Functional Safety

Figure 11-1. Device Nomenclature

11.2 Tools and Software


Models

AWR1443 BSDL model Boundary scan database of testable input and output pins for IEEE 1149.1 of the
specific device.
AWR1x43 IBIS model IO buffer information model for the IO buffers of the device. For simulation on a
circuit board, see IBIS Open Forum.
AWR1443 checklist for A set of steps in spreadsheet form to select system functions and pinmux options.
schematic review, layout Specific EVM schematic and layout notes to apply to customer engineering. A
review, bringup/wakeup bringup checklist is suggested for customers.
11.3 Documentation Support
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
The current documentation that describes the DSP, related peripherals, and other technical collateral follows.
Errata

AWR1443 device errata Describes known advisories, limitations, and cautions on silicon and provides
workarounds.
11.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.

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11.5 Trademarks
TI E2E™ is a trademark of Texas Instruments.
Arm® and Cortex® are registered trademarks of ARM Limited.
All trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.

11.7 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.

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12 Mechanical, Packaging, and Orderable Information


12.1 Packaging Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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PACKAGE OUTLINE
ABL0161B SCALE 1.400
FCBGA - 1.17 mm max height
PLASTIC BALL GRID ARRAY

10.5 B
A
10.3

BALL A1 CORNER

10.5
10.3

1.17 MAX
C

SEATING PLANE

0.37 BALL TYP 0.1 C


TYP
0.27
9.1 TYP

PKG (0.65) TYP

P
(0.65) TYP
N
M
L
K
J PKG
9.1 H
TYP G
F
E
D 0.45
161X
C 0.35
0.15 C A B
B 0.08 C
A
0.65 TYP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

BALL A1 CORNER 0.65 TYP


4223365/A 10/2016

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.

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EXAMPLE BOARD LAYOUT


ABL0161B FCBGA - 1.17 mm max height
PLASTIC BALL GRID ARRAY

(0.65) TYP

161X ( 0.32)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

B
(0.65) TYP
C

G
PKG
H

PKG

LAND PATTERN EXAMPLE


SCALE:10X

0.05 MAX 0.05 MIN


( 0.32) METAL UNDER
METAL SOLDER MASK

( 0.32)
SOLDER MASK SOLDER MASK
OPENING OPENING
SOLDER MASK
NON-SOLDER MASK
DEFINED
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
NOT TO SCALE

4223365/A 10/2016
NOTES: (continued)

3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
For information, see Texas Instruments literature number SPRAA99 (www.ti.com/lit/spraa99).

www.ti.com

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EXAMPLE STENCIL DESIGN


ABL0161B FCBGA - 1.17 mm max height
PLASTIC BALL GRID ARRAY

(0.65) TYP

161X ( 0.32)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

B
(0.65) TYP C

G
PKG
H

PKG

SOLDER PASTE EXAMPLE


BASED ON 0.125 mm THICK STENCIL
SCALE:10X

4223365/A 10/2016

NOTES: (continued)

4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.

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PACKAGE OPTION ADDENDUM

www.ti.com 1-Jun-2023

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)

AWR1443FQIGABLQ1 ACTIVE FCCSP ABL 161 176 RoHS & Green Call TI Level-3-260C-168 HR -40 to 125 AWR1443 Samples
IG
964FC
AWR1443FQIGABLRQ1 ACTIVE FCCSP ABL 161 1000 RoHS & Green Call TI Level-3-260C-168 HR -40 to 125 AWR1443 Samples
IG
964FC

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

Addendum-Page 1
PACKAGE OPTION ADDENDUM

www.ti.com 1-Jun-2023

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2
PACKAGE MATERIALS INFORMATION

www.ti.com 12-Jan-2022

TRAY

Chamfer on Tray corner indicates Pin 1 orientation of packed units.

*All dimensions are nominal


Device Package Package Pins SPQ Unit array Max L (mm) W K0 P1 CL CW
Name Type matrix temperature (mm) (µm) (mm) (mm) (mm)
(°C)
AWR1443FQIGABLQ1 ABL FCCSP 161 176 8 x 22 150 315 135.9 7620 13.4 16.8 17.2

Pack Materials-Page 1
GENERIC PACKAGE VIEW
ABL 161 FCBGA - 1.17 mm max height
10.4 x 10.4, 0.65 mm pitch PLASTIC BALL GRID ARRAY

This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.

4225978/A

www.ti.com
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