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    The document is a question paper for a Biomedical Engineering exam covering topics in electronics devices and circuits. It contains 3 sections - Section A with 10 short answer questions, Section B with 5 long answer questions, and Section C with 1 long answer question. Some of the topics covered include transistor characteristics, amplifier circuits, oscillators, and rectifiers. The questions require students to analyze circuits, derive equations, and explain concepts in electronics devices.

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    The document is a question paper for a Biomedical Engineering exam covering topics in electronics devices and circuits. It contains 3 sections - Section A with 10 short answer questions, Section B with 5 long answer questions, and Section C with 1 long answer question. Some of the topics covered include transistor characteristics, amplifier circuits, oscillators, and rectifiers. The questions require students to analyze circuits, derive equations, and explain concepts in electronics devices.

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    42 views14 pages

    University Question Papers - Electronic Devices and Circuits

    Uploaded by

    idhreesali45
    The document is a question paper for a Biomedical Engineering exam covering topics in electronics devices and circuits. It contains 3 sections - Section A with 10 short answer questions, Section B with 5 long answer questions, and Section C with 1 long answer question. Some of the topics covered include transistor characteristics, amplifier circuits, oscillators, and rectifiers. The questions require students to analyze circuits, derive equations, and explain concepts in electronics devices.

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    of 14

    Reg. No.

    Question Paper Code : 40437

    B.E./B.Tech. DEGREE EXAMINATIONS, NOVEMBER/DECEMBER 2021.

    Third Semester

    Biomedical Engineering

    EC 8353 – ELECTRON DEVICES AND CIRCUITS

    (Common to Computer and Communication Engineering/


    Electrical and Electronics Engineering/
    Electronics and Instrumentation Engineering/
    Instrumentation and Control Engineering/Robotics and Automation)

    (Regulations 2017)

    Time : Three hours Maximum : 100 marks


    Answer ALL questions.

    PART A — (10 × 2 = 20 marks)

    1. Define transition capacitance.

    2. Draw the characteristics curve for LED.

    3. What are the requirements for biasing circuits?

    4. What is meant by negative resistance region of UJT?

    5. Draw the small signal equivalent circuit of CE amplifier.

    6. Why NPN transistor has a better high frequency response than the PNP
    transistor?

    7. Mention the need for a coupling capacitor in amplifier circuits.

    8. What is meant by neutralization?

    9. Write the expression for input and output resistances of voltage series
    feedback amplifier.

    10. Draw the equivalent circuit of crystal oscillator.


    PART B — (5 × 13 = 65 marks)

    11. (a) With neat sketches, explain the construction and L/I characteristics of
    Laser diode. Mention its applications. (13)

    Or
    (b) Determine the forward voltage and forward current for the PN junction
    diode shown in Figure 11 (b) for both ideal model (by taking VF = 0V )
    and for practical model (by taking VF = 0.7V). Also determine the voltage
    across the limiting resistor in each case. Assume r' d = 10 Ω at the
    determined value of forward current.

    Figure 11 (b) (13)

    12. (a) With neat sketches, explain the construction, working and characteristics
    of a n-channel D- MOSFET. (13)

    Or
    (b) With neat sketches, discuss about the construction, working and
    characteristics of IGBT. (13)

    13. (a) Draw the small signal equivalent circuit of Common Source Amplifier
    operated at high frequency and explain. Derive the expression for the
    voltage gain of the CS amplifier. (13)

    Or
    (b) Draw the small signal equivalent model for Common collector amplifier
    constructed using BJT and derive the expression for current gain, voltage
    gain, input resistance and output resistance. (13)

    14. (a) With neat circuit diagram and relevant equations, explain the working of
    a differential amplifier. Also derive the expression for single ended AC
    voltage gain of the circuit. (13)

    Or
    (b) With neat diagrams, elucidate the construction, operation and frequency
    response characteristics of a single tuned amplifier. Also mention why
    potential instability occur in tuned amplifiers? (13)

    2 40437
    15. (a) Draw the circuit of a Colpitt’s oscillator, explain its working and also
    derive the condition for the frequency of oscillation. (13)

    Or
    (b) Design a phase shift oscillator using FET having gm = 5000 μ S,
    rd = 40K Ω and feedback circuit value of R = 10K Ω . Determine the value
    of C, RL and RD to have the frequency of operation as 1KHz and
    A>29. (13)

    PART C — (1 × 15 = 15 marks)

    16. (a) A full wave rectifier is fed from a transformer having a center tapped
    secondary winding. The RMS voltage from either end of secondary to
    center tap is 30V. If the diode forward resistance is 2 Ω and that of the
    half secondary is 8 Ω , for a load of 1K Ω , determine the power delivered
    to load, percentage regulation at full load, rectification efficiency and
    transformer utility factor (TUF) of secondary. (15)

    Or
    (b) For the common-base amplifier shown in Figure 16 (b)

    hie = 1.6 1K Ω hfe = 110


    hre = 2 × 10–4 hoe = 20 μs Io

    + I i'
    +
    Ii
    Rs 1 KΩ 3 KΩ 2.2 K Ω
    Vi Vo
    Zi Zi' Z o' Zo
    Vs 6V 12 V
    – –

    Figure 16 (b)
    Draw the small-signal equivalent and using those parameters determine
    the input impedance (Zi), Current Gain (Ai), Voltage Gain (Av) as well as
    output impedance (Zo). (15)

    —————————

    3 40437
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