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  • BD 355

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    Puiu Frasi Gr
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    This document provides information on the INCHANGE Semiconductor isc Silicon PNP Power Transistor BD355. It describes the transistor's key electrical characteristics including a collector-emitter breakdown voltage of -60V minimum, saturation voltage of -1.0V maximum at -2.0A collector current, and excellent safe operating area. The transistor is designed for general purpose switching and amplifier applications. Absolute maximum ratings and additional electrical characteristics are provided.

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    This document provides information on the INCHANGE Semiconductor isc Silicon PNP Power Transistor BD355. It describes the transistor's key electrical characteristics including a collector-emitter breakdown voltage of -60V minimum, saturation voltage of -1.0V maximum at -2.0A collector current, and excellent safe operating area. The transistor is designed for general purpose switching and amplifier applications. Absolute maximum ratings and additional electrical characteristics are provided.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    Download as pdf or txt
    13 views3 pages

    BD 355

    Uploaded by

    Puiu Frasi Gr
    This document provides information on the INCHANGE Semiconductor isc Silicon PNP Power Transistor BD355. It describes the transistor's key electrical characteristics including a collector-emitter breakdown voltage of -60V minimum, saturation voltage of -1.0V maximum at -2.0A collector current, and excellent safe operating area. The transistor is designed for general purpose switching and amplifier applications. Absolute maximum ratings and additional electrical characteristics are provided.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
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    of 3

    INCHANGE Semiconductor

    isc Silicon PNP Power Transistor BD355

    DESCRIPTION
    ·Collector-Emitter Breakdown Voltage-
    : V(BR)CEO= -60V(Min)
    ·Low Saturation Voltage-
    : VCE(sat)= -1.0V(Max)@ IC = -2.0A
    ·Excellent Safe Operating Area
    ·Complement to Type BD354
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    APPLICATIONS
    ·Designed for general purpose switching and amplifier
    applications

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage -60 V

    VCEO Collector-Emitter Voltage -60 V

    VEBO Emitter-Base Voltage -5 V

    IC Collector Current-Continuous -2 A

    ICM Collector Current-Peak -4 A

    IB Base Current-Continuous -1 A

    PC Collector Power Dissipation @TC=25℃ 25 W

    TJ Junction Temperature 150 ℃

    Tstg Storage Temperature -65~150 ℃

    isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


    INCHANGE Semiconductor

    isc Silicon PNP Power Transistor BD355

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

    V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -60 V

    V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;IE= 0 60 V

    V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;IC= 0 5 V

    VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -0.5 V

    VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.0 V

    VBE(sat)-1 Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.0 V

    VBE(sat)-2 Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.5 V

    ICEO Collector Cutoff Current VCE= -60V; IB= 0 -0.2 mA

    ICBO Collector Cutoff Current VCB= -60V; IE= 0 -0.1 mA

    IEBO Emitter Cutoff Current VEB= -5.0V; IC= 0 -0.1 mA

    hFE-1 DC Current Gain IC= -0.5A; VCE= -4V 30 150

    hFE-1 DC Current Gain IC= -2A; VCE= -4V 5

    fT Current Gain-Bandwidth Product IC= -0.5A; VCE= -10V; f= 1MHz 30 MHz

    isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark


    isc Silicon PNP Power Transistor BD355

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time
    without notification. The information contained herein is presented only as a guide for the
    applications of our products.
    ISC products are intended for usage in general electronic equipment. The products are not
    designed for use in equipment which require specialized quality and/or reliability, or in
    equipment which could have applications in hazardous environments, aerospace industry, or
    medical field. Please contact us if you intend our products to be used in these special
    applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any particular
    purpose, nor does ISC assume any liability arising from the application or use of any products,
    and specifically disclaims any and all liability, including without limitation special,
    consequential or incidental damages.

    isc website：www.iscsemi.com 3 isc & iscsemi is registered trademark

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