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MMBT3906LT1 D-2316089
MMBT3906LT1 D-2316089
Features
• S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable COLLECTOR
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 3
Compliant
1
BASE
MAXIMUM RATINGS
2
Rating Symbol Value Unit EMITTER
Collector −Emitter Voltage VCEO −40 Vdc
Collector −Base Voltage VCBO −40 Vdc 3
Emitter −Base Voltage VEBO −5.0 Vdc
1
Collector Current − Continuous IC −200 mAdc 2
Collector Current − Peak (Note 3) ICM −800 mAdc
SOT−23 (TO−236)
THERMAL CHARACTERISTICS
CASE 318
Characteristic Symbol Max Unit STYLE 6
Total Device Dissipation FR− 5 Board PD
(Note 1) @ TA = 25°C 225 mW
MARKING DIAGRAM
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina PD 2A M G
Substrate, (Note 2) @ TA = 25°C 300 mW G
Derate above 25°C 2.4 mW/°C
1
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
2A = Specific Device Code
Junction and Storage Temperature TJ, Tstg −65 to +150 °C M = Date Code*
Stresses exceeding those listed in the Maximum Ratings table may damage the G = Pb−Free Package
device. If any of these limits are exceeded, device functionality should not be (Note: Microdot may be in either location)
assumed, damage may occur and reliability may be affected. *Date Code orientation and/or overbar may
1. FR− 5 = 1.0 0.75 0.062 in. vary depending upon manufacturing location.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
ORDERING INFORMATION
Device Package Shipping†
MMBT3906LT1G SOT−23 3,000 / Tape &
(Pb−Free) Reel
MMBT3906LT3G SOT−23 10,000 / Tape &
(Pb−Free) Reel
SMMBT3906LT1G SOT−23 3,000 / Tape &
(Pb−Free) Reel
SMMBT3906LT3G SOT−23 10,000 / Tape &
(Pb−Free) Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ON CHARACTERISTICS (Note 4)
DC Current Gain HFE −
(IC = −0.1 mAdc, VCE = −1.0 Vdc) 60 −
(IC = −1.0 mAdc, VCE = −1.0 Vdc) 80 −
(IC = −10 mAdc, VCE = −1.0 Vdc) 100 300
(IC = −50 mAdc, VCE = −1.0 Vdc) 60 −
(IC = −100 mAdc, VCE = −1.0 Vdc) 30 −
Noise Figure NF dB
(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) − 4.0
SWITCHING CHARACTERISTICS
Delay Time (VCC = −3.0 Vdc, VBE = 0.5 Vdc, td − 35
ns
Rise Time IC = −10 mAdc, IB1 = −1.0 mAdc) tr − 35
Storage Time (VCC = −3.0 Vdc, IC = −10 mAdc, ts − 225
ns
Fall Time IB1 = IB2 = −1.0 mAdc) tf − 75
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
MMBT3906L, SMMBT3906L
3V 3V
+9.1 V < 1 ns
275 275
< 1 ns
+0.5 V 10 k 10 k
0
CS < 4 pF* 1N916 CS < 4 pF*
10.6 V
300 ns 10 < t1 < 500 ms
DUTY CYCLE = 2% t1 10.9 V
DUTY CYCLE = 2%
Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time
Equivalent Test Circuit Equivalent Test Circuit
10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)
5.0 Cobo
Q, CHARGE (pC)
1000
700
Cibo
3.0 500
300
2.0 200 QT
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA)
500 500
IC/IB = 10 VCC = 40 V
300 300
IB1 = IB2
200 200
IC/IB = 20
t f , FALL TIME (ns)
100 100
70 70
TIME (ns)
50 tr @ VCC = 3.0 V 50
30 15 V 30
20 20 IC/IB = 10
40 V
10 2.0 V 10
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
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3
MMBT3906L, SMMBT3906L
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) Rg, SOURCE RESISTANCE (k OHMS)
Figure 7. Figure 8.
h PARAMETERS
(VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100
hoe, OUTPUT ADMITTANCE (m mhos)
70
50
h fe , DC CURRENT GAIN
200
30
100 20
70
10
50
7
30 5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
20 10
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )
7.0
h ie , INPUT IMPEDANCE (k OHMS)
10
7.0 5.0
5.0
3.0 3.0
2.0 2.0
1.0
0.7
1.0
0.5
0.7
0.3
0.2 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
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4
MMBT3906L, SMMBT3906L
25°C
-55°C
100
10
1.0 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
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5
MMBT3906L, SMMBT3906L
0.50 1.4
0.45 IC/IB = 10 IC/IB = 10
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V) 150°C
VBE(sat), BASE−EMITTER
25°C
0.35
−55°C 1.0
0.30
−55°C
0.25 0.8
25°C
0.20
0.6
0.15
150°C
0.10
0.4
0.05
0 0.2
0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 15. Collector Emitter Saturation Voltage Figure 16. Base Emitter Saturation Voltage vs.
vs. Collector Current Collector Current
1.4 1000
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE = 1 V
fT, CURRENT−GAIN−BANDWIDTH
VCE = 2 V
1.2 TA = 25°C
150°C
0.4
0.2 10
0.0001 0.001 0.01 0.1 1 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA)
Figure 17. Base Emitter Voltage vs. Collector Figure 18. Current Gain Bandwidth vs.
Current Collector Current
1.0 1
q V , TEMPERATURE COEFFICIENTS (mV/ °C)
1 ms
1s
0.5 100 ms 10 ms
qVC FOR VCE(sat) +25°C TO +125°C
Thermal Limit
0 0.1
-55°C TO +25°C
IC (A)
-0.5
+25°C TO +125°C
-1.0 0.01
-55°C TO +25°C
-1.5 qVB FOR VBE(sat)
Single Pulse Test
@ TA = 25°C
-2.0 0.001
0 20 40 60 80 100 120 140 160 180 200 0.01 0.1 1 10 100
IC, COLLECTOR CURRENT (mA) VCE (Vdc)
Figure 19. Temperature Coefficients Figure 20. Safe Operating Area
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
3 THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
E HE T PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b A1 0.01 0.06 0.10 0.000 0.002 0.004
L1 b 0.37 0.44 0.50 0.015 0.017 0.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
L1 0.35 0.54 0.69 0.014 0.021 0.027
A HE 2.10 2.40 2.64 0.083 0.094 0.104
T 0° −−− 10 ° 0° −−− 10°
A1 SIDE VIEW SEE VIEW C c
GENERIC
END VIEW
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT XXXMG
G
1
3X
2.90 0.90 XXX = Specific Device Code
M = Date Code
G = Pb−Free Package
STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:
PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE
2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE
3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE
STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE
3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE
STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:
PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE
2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE
3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION
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DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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