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    6.BJT CE

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    3 views7 pages

    6.BJT Ce

    Uploaded by

    ramakrishnadecs

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
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    of 7

    Calculations from the Graph

    Input characteristics
    a) Input impedance(hib)= ΔVEB / ΔIE , VCB constant.
    b) Reverse voltage gain(hrb)= ΔVEB/Δ VCB , IE constant
    Output characteristics
    a) Output admittance(hob)= ΔIc / Δ VCB , IE constant
    b) Forward current gain(hfb)= ΔIc / ΔIE , VCB constant

    Result:
    Thus the input and output characteristics of CB configuration are plotted and h parameters are found.
    a) Input impedance(hib)=
    b) Forward current gain(hfb)=
    c) Output admittance(hob)=
    d) Reverse voltage gain(hrb)=

    VIVA QUESTION:

    1. What is Early effect?


    2. Draw the small signal model of BJT Common Base Configuration.
    3. What is Reach –Through effect?
    4. What are the applications of Common Base.
    5. What will be the parameters of CB.
    6. Explain the Transistor operation?

    54
    8. BJT Characteristics (CE Configuration)

    Aim:
    To plot the input and output characteristics of a transistor in CE Configuration and to compute the h –
    parameters.
    Apparatus
    S.No Apparatus Type Range Quantity

    01 Transistor BC107 01

    02 Resistance 300KΩ,1KΩ 01

    03 Regulated Power supply (0-30V) 01

    04 Ammeter (0-100mA),(0-100µA) 01

    05 Voltmeter (0-2V),(0-20V) 01

    06 Breadboard and Wires

    Introduction:

    Bipolar junction transistor (BJT) is a 3 terminal (emitter, base, collector) semiconductor device. There are
    two types of transistors namely NPN and PNP. It consists of two P-N junctions namely emitter junction
    and collector junction.

    In Common Emitter configuration the input is applied between base and emitter and the output is taken
    from collector and emitter. Here emitter is common to both input and output and hence the name common
    emitter configuration.

    Input characteristics are obtained between the input current and input voltage taking output voltage as
    parameter. It is plotted between VBE and IB at constant VCE in CE configuration.

    Output characteristics are obtained between the output voltage and output current taking input current as
    parameter. It is plotted between VCE and IC at constant IB in CE configuration.

    55
    PIN Assingnment

    Circuit Diagram
    (0-50)mA 1 K
    - +
    A
    C
    300 K (0-100)uA

    + - B
    A BC107
    +
    (0-30)V+ + (0-20)V VCE +

    - VCC
    V VBE
    E

    - - - (0-30)V
    (0-2)V

    56
    Precautions:
    1. While doing the experiment do not exceed the ratings of the transistor. This may lead to damage the
    transistor.
    2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
    3. Do not switch ON the power supply unless you have checked the circuit connections as per the circuit
    diagram.
    4. Make sure while selecting the emitter, base and collector terminals of the transistor.

    Experiment
    Input Characteristics

    1. Connect the transistor in CE configuration as per circuit diagram


    2. Keep output voltage VCE = 0V by varying VCC.
    3. By varying VBB ,vary VBE in steps of 0.1V and note down base current IB .
    4. Repeat above procedure (step 3) for various values of VCE (VCE=5V and VCE=10V)
    5. Plot the input characteristics by taking VBE on X-axis and IB on Y-axis at constant VCE.
    Output Characteristics

    1. Make the connections as per circuit diagram.


    2. By varying VBB keep the base current IB = 0μA.
    3. By varying VCC , vary VCE in steps of 1V and note down the readings of collector-current (IC)
    4. Repeat above procedure (step 3) for different values of IB
    5. Plot the output characteristics by taking VCE on x-axis and IC on y-axis by taking IB as a constant
    parameter.
    Tabular column
    Input Characteristics

    VCE= 0 V VCE= 5 V VCE = 10 V


    VBE (V) IB (μA) VBE (V) IB (μA) VBE (V) IB (μA)

    57
    Output Characteristics

    IB = 0 μA IB = 10 μA IB = 20 μA
    VCE (V) IC (mA) VCE (V) IC (mA) VCE (V) IC (mA)

    58
    Model Graph

    Input characteristics

    Output characteristics

    Calculations from graph:


    Input characteristics
    a) Input impedance(hie)= ΔVBE / ΔIB , VCE constant.
    b) Reverse voltage gain(hre)= ΔVBE/Δ VCE , IB constant
    Output characteristics
    a) Output admittance(hoe)= ΔIc / Δ VCE , IB constant
    b) Forward current gain(hfe)= ΔIc / ΔIB , VCE constant

    59
    Result:

    Thus the input and output characteristics of CE configuration is plotted.


    a) Input impedance(hie)=
    b) Forward current gain(hfe)=
    c) Output admittance(hoe)=
    d) Reverse voltage gain(hre)=

    VIVA QUESTION:

    1. Why CE configuration is most widely used?


    2. Draw the equivalent Circuit of C.E
    3. What is the Current Gain,voltage gain,i/p and o/p impedance in CE?.
    4. Relation between „‟ and „‟ and γ
    5. Give the condition to operate the given Transistor in active,saturation &Cut-off Regions
    6. What is Emitter Efficiency?

    60

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