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  • Chemical Mechanical Polishing

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    Surya
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    The document discusses chemical mechanical polishing (CMP) which is used to planarize integrated circuit surfaces. CMP involves pressing a rotating wafer face-down against a rotating polishing pad with an aqueous slurry. This combines chemical and mechanical effects to remove material from the wafer surface. The key components of CMP include the polishing tool, polishing pad, slurry, and process parameters which must be optimized for different applications such as oxide, copper, and tungsten polishing. CMP is crucial for achieving global planarization in modern chip manufacturing.

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    IN NANO ELECTRONICS

    Original Title

    CHEMICAL MECHANICAL POLISHING

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    The document discusses chemical mechanical polishing (CMP) which is used to planarize integrated circuit surfaces. CMP involves pressing a rotating wafer face-down against a rotating polishing pad with an aqueous slurry. This combines chemical and mechanical effects to remove material from the wafer surface. The key components of CMP include the polishing tool, polishing pad, slurry, and process parameters which must be optimized for different applications such as oxide, copper, and tungsten polishing. CMP is crucial for achieving global planarization in modern chip manufacturing.

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    79 views18 pages

    Chemical Mechanical Polishing

    Uploaded by

    Surya
    The document discusses chemical mechanical polishing (CMP) which is used to planarize integrated circuit surfaces. CMP involves pressing a rotating wafer face-down against a rotating polishing pad with an aqueous slurry. This combines chemical and mechanical effects to remove material from the wafer surface. The key components of CMP include the polishing tool, polishing pad, slurry, and process parameters which must be optimized for different applications such as oxide, copper, and tungsten polishing. CMP is crucial for achieving global planarization in modern chip manufacturing.

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    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
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    of 18

    VIVEKANANDHA COLLEGE OF

    ENGINEERING FOR WOMEN


    (AUTONOMOUS)

    CHEMICAL MECHANICAL POLISHING


    (NANO ELECTRONICS)
    SUBMITTED BY
    K.NANDHINI(18205003),
    II-ME (VLSI DESIGN)
    INTRODUCTION
    CMP Basics:
    CMP is a physico-chemical process used to make
    wafer surfaces locally and globally flat.
    Chemical action:
    • Hydroxyl ions attack SiO2 in oxide CMP,
    causing surface softening and chemical
    dissolution.
    • Oxidants enhance metal dissolution and control
    passivation in metal CMP.
    INTRODUCTION(cont.,)
    Mechanical action:
    • Polisher rotation and pressure.
    • A rotating wafer is pressed face-down against a
    rotating polishing pad; an aqueous suspension
    of abrasive (slurry) is pressed against the face
    of the wafer by the pad.
    • A combination of chemical and physical effects
    removes features from the wafer surface.
    CMP Apparatus
    What is CMP?

    • Polishing of Layer to Remove a Specific Material,


    e.g. Metal, dielectric.

    • Planarization of IC Surface Topology.


    CMP Tooling
    • Rotating Multi-head Wafer Carriage.
    • Rotating Pad.
    • Wafer Rests on Film of Slurry.

    Velocity= -(WtRcc)–[Rh(Wh –Wt)]

    when Wh=Wt Velocity = const.


    Table Quill (Wafer Carrier)
    Schematic Diagram
    Background
     Used to polish ‘bare wafer’.
     IBM pioneered.
     Uses particles. Class 100 or Class 1000 clean room.
     Pad
    Soft pad, hard pad, stacked pad.
    Hard pad with perforations, grooves.
     Quill
    Surface tension, vacuum
     Slurry
    Abrasive, chemicals
    CMP: Pad
    • Pad is softer than wafer
    – whether it is Cu or oxide or W
    • Pure chemical dissolution is rare
    – A complexing or oxidizing film usually forms
    • Pure mechanical removal is possible, but not
    preferred
    – Scratches
    • ==> shorts
    • Pad has asperities
    – helps in holding particles
    CMP: Consumable
     Pad can be used for 150 polishes (for example)
     Polish rate and within wafer non uniformity will go
    worse (WIWNU)

    PETEOS- Plasma
    Enhanced TEOS
    based oxide
    CMP: Removal Rate
     Both pad and quill (wafer holder) rotating at the same
    rate
     Quill off-center
     Relative velocity at all the locations will be same
    Dishing Erosion Losses

    Soft pad ==> more dishing erosion.

     Dishing/Erosion ==> higher resistance,


    more variation in resistance.
    CMP: Copper
     Single step vs. Multi step (cost of equipment,
    slurry).
     Barrier CMP.
     Ta harder, less reactive.
     Traces of barrier – short.
     More mechanical removal – short scratches.
     More chemical removal - Cu loss.
     Need to strike a balance.
    CMP: Oxide
     Blank Oxide vs STI
     LOCOS vs STI
     LOCOS: semi recessed/ fully recessed
     Issues:
     Dummy Fill / Reverse Active Mask
     Dishing
     Notch
     Stress
     Nitride Polish
    CMP: Wafer
     Well established.
     Liner removal is easier (Ti/TiN).
     Lingering liner can be removed (for example)
    with plasma etch / RIE.
     For a short time (touch up RIE).
     Good selectivity is achievable.
     Wafer plug is never large.
     Dishing not an issue.
     Erosion still an issue.
     not for resistance.
     however for DOF.
    CMP: Clean
    Particles to be removed.

     Brush Scrub
     Boundary Layer

     Mega Sonic/ ultra sonic.

     Copper sometimes
    cleaned in dark.
    CMP: New Nodes

     Abrasive Free, Fixed abrasive, Micelle.

     Electro polish.

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