Chemical Mechanical Polishing
Chemical Mechanical Polishing
PETEOS- Plasma
Enhanced TEOS
based oxide
CMP: Removal Rate
Both pad and quill (wafer holder) rotating at the same
rate
Quill off-center
Relative velocity at all the locations will be same
Dishing Erosion Losses
Brush Scrub
Boundary Layer
Copper sometimes
cleaned in dark.
CMP: New Nodes
Electro polish.